Patents by Inventor Michael F. Lofaro
Michael F. Lofaro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140302675Abstract: A nanogap of controlled width in-between noble metals is produced using sidewall techniques and chemical-mechanical-polishing. Electrical connections are provided to enable current measurements across the nanogap for analytical purposes. The nanogap in-between noble metals may also be formed inside a Damascene trench. The nanogap in-between noble metals may also be inserted into a crossed slit nanopore framework. A noble metal layer on the side of the nanogap may have sub-layers serving the purpose of multiple simultaneous electrical measurements.Type: ApplicationFiled: April 4, 2013Publication date: October 9, 2014Applicant: International Business Machines CorporationInventors: Yann Astier, Jingwei Bai, Michael F. Lofaro, Satyavolu S. Papa Rao, Joshua T. Smith, Chao Wang
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Patent number: 8807318Abstract: A multi-generational carrier platform is configured to carry substrate carriers of different sizes depending on processing needs. Multiple carrier adaptors are provided on one side of a support plate, and substrate carriers can be distributed among the carrier adaptors to mount a maximum number of substrates under the constraint of non-overlap of the substrates and the substrate carriers. The multi-generational carrier platform can be configured to provide rotation to each substrate carrier mounted thereupon, and is compatible with chemical mechanical planarization processes that require rotation of substrates against an abrasive surface. The multi-generational carrier platform facilitates maximum utilization of a processing area provided by a tool configured to process substrates of different sizes.Type: GrantFiled: September 20, 2011Date of Patent: August 19, 2014Assignee: International Business Machines CorporationInventor: Michael F. Lofaro
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Patent number: 8794427Abstract: A multi-generational carrier platform is configured to carry substrate carriers of different sizes depending on processing needs. Multiple carrier adaptors are provided on one side of a support plate, and substrate carriers can be distributed among the carrier adaptors to mount a maximum number of substrates under the constraint of non-overlap of the substrates and the substrate carriers. The multi-generational carrier platform can be configured to provide rotation to each substrate carrier mounted thereupon, and is compatible with chemical mechanical planarization processes that require rotation of substrates against an abrasive surface. The multi-generational carrier platform facilitates maximum utilization of a processing area provided by a tool configured to process substrates of different sizes.Type: GrantFiled: September 6, 2012Date of Patent: August 5, 2014Assignee: International Business Machines CorporationInventor: Michael F. Lofaro
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Publication number: 20130316623Abstract: An apparatus for chemical mechanical planarization includes a spindle assembly structure and at least one substrate carrier, which make a linear lateral movement relative to each other while abrasive surfaces of a plurality of cylindrical spindles in the spindle assembly structure contact, and rotate against, at least one substrate mounted on the at least one substrate carrier. The direction of the linear lateral movement is within the plane that tangentially contacts the plurality of cylindrical spindles, and can be orthogonal to the axes of rotation of the plurality of cylindrical spindles.Type: ApplicationFiled: August 5, 2013Publication date: November 28, 2013Applicant: International Business Machines CorporationInventors: Michael A. Cobb, Mahadevaiyer Krishnan, Michael F. Lofaro, Dennis G. Manzer
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Patent number: 8591289Abstract: An apparatus for chemical mechanical planarization includes a spindle assembly structure and at least one substrate carrier, which make a linear lateral movement relative to each other while abrasive surfaces of a plurality of cylindrical spindles in the spindle assembly structure contact, and rotate against, at least one substrate mounted on the at least one substrate carrier. The direction of the linear lateral movement is within the plane that tangentially contacts the plurality of cylindrical spindles, and can be orthogonal to the axes of rotation of the plurality of cylindrical spindles.Type: GrantFiled: September 6, 2012Date of Patent: November 26, 2013Assignee: International Business Machines CorporationInventors: Michael A. Cobb, Mahadevaiyer Krishnan, Michael F. Lofaro, Dennis G. Manzer
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Patent number: 8535118Abstract: An apparatus for chemical mechanical planarization includes a spindle assembly structure and at least one substrate carrier, which make a linear lateral movement relative to each other while abrasive surfaces of a plurality of cylindrical spindles in the spindle assembly structure contact, and rotate against, at least one substrate mounted on the at least one substrate carrier. The direction of the linear lateral movement is within the plane that tangentially contacts the plurality of cylindrical spindles, and can be orthogonal to the axes of rotation of the plurality of cylindrical spindles.Type: GrantFiled: September 20, 2011Date of Patent: September 17, 2013Assignee: International Business Machines CorporationInventors: Michael A. Cobb, Mahadevaiyer Krishnan, Michael F. Lofaro, Dennis G. Manzer
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Patent number: 8524606Abstract: Planarization methods include depositing a mask material on top of an overburden layer on a semiconductor wafer. The mask material is planarized to remove the mask material from up areas of the overburden layer to expose the overburden layer without removing the mask material from down areas. The exposed overburden layer is wet etched and leaves a thickness remaining over an underlying layer. Remaining portions of the mask layer and the exposed portions of the overburden layer are planarized to expose the underlying layer.Type: GrantFiled: January 25, 2011Date of Patent: September 3, 2013Assignees: International Business Machines Corporation, JSR CorporationInventors: Leslie Charns, John M. Cotte, Jason E. Cummings, Lukasz J. Hupka, Dinesh R. Koli, Tomohisa Konno, Mahadevaiyer Krishnan, Michael F. Lofaro, Jakub W. Nalaskowski, Masahiro Noda, Dinesh K. Penigalapati, Tatsuya Yamanaka
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Patent number: 8513127Abstract: A planarization method includes planarizing a semiconductor wafer in a first chemical mechanical polish step to remove overburden and planarize a top layer leaving a thickness of top layer material over underlying layers. The top layer material is planarized in a second chemical mechanical polish step to further remove the top layer and expose underlying layers of a second material and a third material such that a selectivity of the top layer material to the second material to the third material is between about 1:1:1 to about 2:1:1 to provide a planar topography.Type: GrantFiled: January 25, 2011Date of Patent: August 20, 2013Assignees: International Business Machines Corporation, JSR CorporationInventors: Josephine B. Chang, Leslie Charns, Jason E. Cummings, Michael A. Guillorn, Lukasz J. Hupka, Dinesh R. Koli, Tomohisa Konno, Mahadevaiyer Krishnan, Michael F. Lofaro, Jakub W. Nalaskowski, Masahiro Noda, Dinesh K. Penigalapati, Tatsuya Yamanaka
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Patent number: 8507383Abstract: Methods for polishing multiple dielectric layers to form replacement metal gate structures include a first chemical mechanical polish step to remove overburden and planarize a top layer to leave a planarized thickness over a gate structure. A second chemical mechanical polish step includes removal of the thickness to expose an underlying covered surface of a dielectric of the gate structure with a slurry configured to polish the top layer and the underlying covered surface substantially equally to accomplish a planar topography. A third chemical mechanical polish step is employed to remove the dielectric of the gate structure and expose a gate conductor.Type: GrantFiled: January 25, 2011Date of Patent: August 13, 2013Assignees: International Business Machines Corporation, JRS CorporationInventors: Takashi Ando, Leslie Charns, Jason E. Cummings, Lukasz J. Hupka, Dinesh R. Koli, Tomohisa Konno, Mahadevaiyer Krishnan, Michael F. Lofaro, Jakub W. Nalaskowski, Masahiro Noda, Dinesh K. Penigalapati, Tatsuya Yamanaka
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Patent number: 8497210Abstract: A polishing method includes polishing, in a first polish, a wafer to remove overburden and planarize a top layer leaving a portion remaining on an underlying layer. A second polishing step includes two phases. In a first phase, the top layer is removed and the underlying layer is exposed, with a top layer to underlying layer selectivity of between about 1:1 to about 2:1 to provide a planar topography. In a second phase, residual portions of the top layer are removed from a top of the underlying layer to ensure complete exposure of an underlying layer surface.Type: GrantFiled: January 24, 2011Date of Patent: July 30, 2013Assignees: International Business Machines Corporation, JRS CorporationInventors: Leslie Charns, Jason E. Cummings, Lukasz J. Hupka, Dinesh R. Koli, Tomohisa Konno, Mahadevaiyer Krishnan, Michael F. Lofaro, Jakub W. Nalaskowski, Masahiro Noda, Dinesh K. Penigalapati, Tatsuya Yamanaka
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Patent number: 8445313Abstract: A method of forming bit line aligned to a phase change material that includes forming a pedestal of a sacrificial material on a portion of a lower electrode and forming at least one dielectric material adjacent to the sacrificial material, wherein the at least one dielectric material has an upper surface substantially coplanar with an upper surface of the pedestal of the sacrificial material. The pedestal of the sacrificial material is removed selective to the at least one dielectric material and the lower electrode to provide an opening to an exposed surface of the lower electrode. A phase change material is formed on the exposed surface of the lower electrode, and the opening is filled with a conductive fill material. A self-aligned etch back process is also provided.Type: GrantFiled: July 11, 2012Date of Patent: May 21, 2013Assignees: International Business Machines Corporatoin, Macronix International Co., Ltd.Inventors: Matthew J. Breitwisch, Chieh-Fang Chen, Shih-Hung Chen, Eric A. Joseph, Chung Hon Lam, Michael F. Lofaro, Hsiang-Lan Lung, Alejandro G. Schrott, Min Yang
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Publication number: 20130068588Abstract: A multi-generational carrier platform is configured to carry substrate carriers of different sizes depending on processing needs. Multiple carrier adaptors are provided on one side of a support plate, and substrate carriers can be distributed among the carrier adaptors to mount a maximum number of substrates under the constraint of non-overlap of the substrates and the substrate carriers. The multi-generational carrier platform can be configured to provide rotation to each substrate carrier mounted thereupon, and is compatible with chemical mechanical planarization processes that require rotation of substrates against an abrasive surface. The multi-generational carrier platform facilitates maximum utilization of a processing area provided by a tool configured to process substrates of different sizes.Type: ApplicationFiled: September 20, 2011Publication date: March 21, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventor: Michael F. Lofaro
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Publication number: 20130072089Abstract: An apparatus for chemical mechanical planarization includes a spindle assembly structure and at least one substrate carrier, which make a linear lateral movement relative to each other while abrasive surfaces of a plurality of cylindrical spindles in the spindle assembly structure contact, and rotate against, at least one substrate mounted on the at least one substrate carrier. The direction of the linear lateral movement is within the plane that tangentially contacts the plurality of cylindrical spindles, and can be orthogonal to the axes of rotation of the plurality of cylindrical spindles.Type: ApplicationFiled: September 20, 2011Publication date: March 21, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Michael F. Lofaro, Mahadevaiyer Krishnan, Michael A. Cobb, Dennis G. Manzer
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Publication number: 20130072092Abstract: An apparatus for chemical mechanical planarization includes a spindle assembly structure and at least one substrate carrier, which make a linear lateral movement relative to each other while abrasive surfaces of a plurality of cylindrical spindles in the spindle assembly structure contact, and rotate against, at least one substrate mounted on the at least one substrate carrier. The direction of the linear lateral movement is within the plane that tangentially contacts the plurality of cylindrical spindles, and can be orthogonal to the axes of rotation of the plurality of cylindrical spindles.Type: ApplicationFiled: September 6, 2012Publication date: March 21, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Michael F. Lofaro, Mahadevaiyer Krishnan, Michael A. Cobb, Dennis G. Manzer
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Publication number: 20130068592Abstract: A multi-generational carrier platform is configured to carry substrate carriers of different sizes depending on processing needs. Multiple carrier adaptors are provided on one side of a support plate, and substrate carriers can be distributed among the carrier adaptors to mount a maximum number of substrates under the constraint of non-overlap of the substrates and the substrate carriers. The multi-generational carrier platform can be configured to provide rotation to each substrate carrier mounted thereupon, and is compatible with chemical mechanical planarization processes that require rotation of substrates against an abrasive surface. The multi-generational carrier platform facilitates maximum utilization of a processing area provided by a tool configured to process substrates of different sizes.Type: ApplicationFiled: September 6, 2012Publication date: March 21, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventor: Michael F. Lofaro
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Publication number: 20120276688Abstract: A method of forming bit line aligned to a phase change material that includes forming a pedestal of a sacrificial material on a portion of a lower electrode and forming at least one dielectric material adjacent to the sacrificial material, wherein the at least one dielectric material has an upper surface substantially coplanar with an upper surface of the pedestal of the sacrificial material. The pedestal of the sacrificial material is removed selective to the at least one dielectric material and the lower electrode to provide an opening to an exposed surface of the lower electrode. A phase change material is formed on the exposed surface of the lower electrode, and the opening is filled with a conductive fill material. A self-aligned etch back process is also provided.Type: ApplicationFiled: July 11, 2012Publication date: November 1, 2012Applicants: Macronix International Co., Ltd., International Business Machines CorporationInventors: Matthew J. Breitwisch, Chieh-Fang Chen, Shih-Hung Chen, Eric A. Joseph, Chung Hon Lam, Michael F. Lofaro, Hsiang-Lan Lung, Alejandro G. Schrott, Min Yang
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Patent number: 8273598Abstract: A method of forming bit line aligned to a phase change material that includes forming a pedestal of a sacrificial material on a portion of a lower electrode and forming at least one dielectric material adjacent to the sacrificial material, wherein the at least one dielectric material has an upper surface substantially coplanar with an upper surface of the pedestal of the sacrificial material. The pedestal of the sacrificial material is removed selective to the at least one dielectric material and the lower electrode to provide an opening to an exposed surface of the lower electrode. A phase change material is formed on the exposed surface of the lower electrode, and the opening is filled with a conductive fill material. A self-aligned etch back process is also provided.Type: GrantFiled: February 3, 2011Date of Patent: September 25, 2012Assignees: International Business Machines Corporation, Macronix International Co., Ltd.Inventors: Matthew J. Breitwisch, Chieh-Fang Chen, Shih-Hung Chen, Eric A. Joseph, Chung Hon Lam, Michael F. Lofaro, Hsiang-Lan Lung, Alejandro G. Schrott, Min Yang
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Patent number: 8263497Abstract: An assembly including a main wafer having a body with a front side and a back side and a plurality of blind electrical vias terminating above the back side, and a handler wafer, is obtained. A step includes exposing the blind electrical vias to various heights on the back side. Another step involves applying a first chemical mechanical polish process to the back side, to open any of the surrounding insulator adjacent the end regions of the cores remaining after the exposing step, and to co-planarize the via conductive cores, the surrounding insulator adjacent the side regions of the cores, and the body of the main wafer. Further steps include etching the back side to produce a uniform standoff height of each of the vias across the back side; depositing a dielectric across the back side; and applying a second chemical mechanical polish process to the back side.Type: GrantFiled: January 13, 2009Date of Patent: September 11, 2012Assignee: International Business Machines CorporationInventors: Paul S. Andry, John M. Cotte, Michael F. Lofaro, Edmund J. Sprogis, James A. Tornello, Cornelia K. Tsang
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Publication number: 20120202333Abstract: A method of forming bit line aligned to a phase change material that includes forming a pedestal of a sacrificial material on a portion of a lower electrode and fowling at least one dielectric material adjacent to the sacrificial material, wherein the at least one dielectric material has an upper surface substantially coplanar with an upper surface of the pedestal of the sacrificial material. The pedestal of the sacrificial material is removed selective to the at least one dielectric material and the lower electrode to provide an opening to an exposed surface of the lower electrode. A phase change material is formed on the exposed surface of the lower electrode, and the opening is filled with a conductive fill material. A self-aligned etch back process is also provided.Type: ApplicationFiled: February 3, 2011Publication date: August 9, 2012Applicants: MACRONIX INTERNATIONAL CO., LTD., INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Matthew J. Breitwisch, Chieh-Fang Chen, Shih-Hung Chen, Eric A. Joseph, Chung Hon Lam, Michael F. Lofaro, Hsiang-Lan Lung, Alejandro G. Schrott, Min Yang
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Publication number: 20120083121Abstract: Methods for polishing multiple dielectric layers to form replacement metal gate structures include a first chemical mechanical polish step to remove overburden and planarize a top layer to leave a planarized thickness over a gate structure. A second chemical mechanical polish step includes removal of the thickness to expose an underlying covered surface of a dielectric of the gate structure with a slurry configured to polish the top layer and the underlying covered surface substantially equally to accomplish a planar topography. A third chemical mechanical polish step is employed to remove the dielectric of the gate structure and expose a gate conductor.Type: ApplicationFiled: January 25, 2011Publication date: April 5, 2012Applicants: JSR CORPORATION, INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Takashi Ando, Leslie Charns, Jason E. Cummings, Lukasz J. Hupka, Dinesh R. Koli, Tomohisa Konno, Mahadevaiyer Krishnan, Michael F. Lofaro, Jakub W. Nalaskowski, Masahiro Noda, Dinesh K. Penigalapati, Tatsuya Yamanaka