Abstract: A transistor device includes a compound semiconductor body, a drain disposed in the compound semiconductor body and a source disposed in the compound semiconductor body and spaced apart from the drain by a channel region. A gate is provided for controlling the channel region. The transistor device further includes a gate overvoltage protection device connected between the source and the gate, the gate overvoltage protection device including p-type and n-type silicon-containing semiconductor material.

Abstract: A field-effect semiconductor device is provided. The field-effect semiconductor device includes a semiconductor body with a first surface defining a vertical direction. In a vertical cross-section the field-effect semiconductor device further includes a vertical trench extending from the first surface into the semiconductor body and comprising a field electrode, a cavity at least partly surrounded by the field electrode, and an insulation structure substantially surrounding at least the field electrode. An interface between the insulation structure and the surrounding semiconductor body is under tensile stress and the cavity is filled or unfilled so as to counteract the tensile stress.

Abstract: A semiconductor device includes a semiconductor body. The semiconductor body includes a load transistor part and a sensor transistor part. A first source region of the load transistor part and a second source region of the sensor transistor part are electrically separated from each other. A common gate electrode in a common gate trench extends into the semiconductor body from a first surface. A first part of the common gate trench is in the load transistor part, and a second part of the common gate trench is in the sensor transistor part. A field electrode in a field electrode trench extends into the semiconductor body from the first surface. A maximum dimension of the field electrode trench parallel to the first surface is smaller than a depth of the field electrode trench.

Abstract: A semiconductor device includes a field electrode structure with a field electrode and a field dielectric surrounding the field electrode. A semiconductor body includes a transistor section surrounding the field electrode structure and including a source zone, a first drift zone section and a body zone separating the source zone and the first drift zone section. The body zone forms a first pn junction with the source zone and a second pn junction with the first drift zone section. A gate structure surrounds the field electrode structure and includes a gate electrode and a gate dielectric separating the gate electrode and the body zone. A contact structure directly adjoins the source and body zones and surrounds the field electrode structure equably with respect to the field electrode structure.

Abstract: A semiconductor device includes field electrode structures regularly arranged in lines in a cell area and forming a first portion of a regular pattern. Termination structures are formed in an inner edge area surrounding the cell area, wherein at least portions of the termination structures form a second portion of the regular pattern. Cell mesas separate neighboring ones of the field electrode structures from each other in the cell area and include first portions of a drift zone, wherein a voltage applied to a gate electrode controls a current flow through the cell mesas. At least one doped region forms a homojunction with the drift zone in the inner edge area.

Abstract: A transistor device includes a compound semiconductor body, a drain disposed in the compound semiconductor body and a source disposed in the compound semiconductor body and spaced apart from the drain by a channel region. A gate is provided for controlling the channel region. The transistor device further includes a gate overvoltage protection device connected between the source and the gate, the gate overvoltage protection device including p-type and n-type silicon-containing semiconductor material.

Abstract: A semiconductor device includes a plurality of field plate trenches formed in a semiconductor substrate, a plurality of gate trenches formed in the semiconductor substrate and spaced apart from the field plate trenches, and a plurality of device cells having a cell pitch defined by a distance from one side of a field plate trench to the same side of an adjacent field plate trench. Each device cell includes a first doped region of a first conductivity type and a second doped region of a second conductivity type adjacent the first doped region in a part of the semiconductor substrate disposed between the adjacent field plate trenches that define the cell pitch. At least some of the device cells have more than one gate trench per cell pitch.

Abstract: A semiconductor device includes a plurality of field plate trenches formed in a semiconductor substrate, a plurality of gate trenches formed in the semiconductor substrate and spaced apart from the field plate trenches, and a plurality of device cells having a cell pitch defined by a distance from one side of a field plate trench to the same side of an adjacent field plate trench. Each device cell includes a first doped region of a first conductivity type and a second doped region of a second conductivity type adjacent the first doped region in a part of the semiconductor substrate disposed between the adjacent field plate trenches that define the cell pitch. At least some of the device cells have more than one gate trench per cell pitch.

Abstract: A power MOSFET includes a gate electrode in a gate trench in a main surface of a semiconductor substrate, the gate trench extending parallel to the main surface. The power MOSFET further includes a field electrode in a field plate trench in the main surface. The field plate trench has an extension length in a first direction which is less than double and more than half of an extension length of the field plate trench in a second direction perpendicular to the first direction, the first and the second directions being parallel to the main surface. The gate electrode includes a gate electrode material which comprises a metal.

Abstract: A semiconductor device includes a field effect transistor structure having source zones of a first conductivity type and body zones of a second conductivity type which is the opposite of the first conductivity type, the source zones adjoining a first surface of a semiconductor die comprising the source and the body zones. The semiconductor device further includes a dielectric layer adjoining the first surface and polysilicon plugs extending through openings in the dielectric layer and electrically connected to the source and the body zones. The polysilicon plugs have silicide crystallites in portions distant to the semiconductor die.

Abstract: A field-effect semiconductor device is provided. The field-effect semiconductor device includes a semiconductor body with a first surface defining a vertical direction. In a vertical cross-section the field-effect semiconductor device further includes a vertical trench extending from the first surface into the semiconductor body and comprising a field electrode, a cavity at least partly surrounded by the field electrode, and an insulation structure substantially surrounding at least the field electrode. An interface between the insulation structure and the surrounding semiconductor body is under tensile stress and the cavity is filled or unfilled so as to counteract the tensile stress.

Abstract: A transistor component includes a semiconductor body, a first main electrode, a gate contact electrode, a plurality of transistor cells, and a plurality of gate electrodes. The semiconductor body has a drain region and a drift region of a first conduction type, and a body region of a second conduction type. The first main electrode is on a top side of the semiconductor body. The plurality of gate electrodes is electrically connected to the gate contact electrode and arranged successively in a first lateral direction. In the plurality, a first gate electrode is next to a second gate electrode. The first main electrode includes a first trench contact finger, between the first gate electrode and the second gate electrode, and a second trench contact finger, between the first gate electrode and the second gate electrode, electrically connecting the first main electrode to the body region.

Abstract: Source zones of a first conductivity type and body zones of a second conductivity type are formed in a semiconductor die. The source zones directly adjoin a first surface of the semiconductor die. A dielectric layer adjoins the first surface. Polysilicon plugs extend through the dielectric layer and are electrically connected to the source and the body zones. An impurity source containing at least one metallic recombination element is provided in contact with deposited polycrystalline silicon material forming the polysilicon plugs and distant to the semiconductor die. Atoms of the metallic recombination element, for example platinum atoms, may be diffused out from the impurity source into the semiconductor die to reliably reduce the reverse recovery charge.

Abstract: A field-effect semiconductor device is provided. The field-effect semiconductor device includes a semiconductor body with a first surface defining a vertical direction. In a vertical cross-section the field-effect semiconductor device further includes a vertical trench extending from the first surface into the semiconductor body. The vertical trench includes a field electrode, a cavity at least partly surrounded by the field electrode, and an insulation structure substantially surrounding at least the field electrode. Further, a method for producing a field-effect semiconductor device is provided.

Abstract: A semiconductor device includes a gate electrode buried in a semiconductor portion. The gate electrode includes a first gate portion on a first side of a longitudinal center axis of the gate electrode parallel to the main surface and a second gate portion on an opposite, second side of the longitudinal center axis. At least one first gate contact extends from a main side defined by a main surface into the first gate portion.

Abstract: Source zones of a first conductivity type and body zones of a second conductivity type are formed in a semiconductor die. The source zones directly adjoin a first surface of the semiconductor die. A dielectric layer adjoins the first surface. Polysilicon plugs extend through the dielectric layer and are electrically connected to the source and the body zones. An impurity source containing at least one metallic recombination element is provided in contact with deposited polycrystalline silicon material forming the polysilicon plugs and distant to the semiconductor die. Atoms of the metallic recombination element, for example platinum atoms, may be diffused out from the impurity source into the semiconductor die to reliably reduce the reverse recovery charge.

Abstract: In a semiconductor die, source zones of a first conductivity type and body zones of a second conductivity type are formed. Both the source and the body zones adjoin a first surface of the semiconductor die in first sections. An impurity source is provided in contact with the first sections of the first surface. The impurity source is tempered so that atoms of a metallic recombination element diffuse out from the impurity source into the semiconductor die. Then impurities of the second conductivity type are introduced into the semiconductor die to form body contact zones between two neighboring source zones, respectively. The atoms of the metallic recombination element reduce the reverse recovery charge in the semiconductor die. Providing the body contact zones after tempering the platinum source provides uniform and reliable body contacts.

Abstract: A transistor device includes a compound semiconductor body, a drain disposed in the compound semiconductor body and a source disposed in the compound semiconductor body and spaced apart from the drain by a channel region. A gate is provided for controlling the channel region. The transistor device further includes a gate overvoltage protection device connected between the source and the gate, the gate overvoltage protection device including p-type and n-type silicon-containing semiconductor material.

Abstract: A field-effect semiconductor device is provided. The field-effect semiconductor device includes a semiconductor body with a first surface defining a vertical direction. In a vertical cross-section the field-effect semiconductor device further includes a vertical trench extending from the first surface into the semiconductor body. The vertical trench includes a field electrode, a cavity at least partly surrounded by the field electrode, and an insulation structure substantially surrounding at least the field electrode. Further, a method for producing a field-effect semiconductor device is provided.

Abstract: Disclosed are a semiconductor device and a method for producing a semiconductor device. A MOSFET may have a source region, a drift region and a drain region of a first conductivity type, a body region of a second conductivity type disposed between the source region and the drift region, and a gate electrode disposed adjacent to said body region. The gate electrode may be isolated from the body region by a dielectric, and have a source electrode contacting the source region and the body region. A self-locking JFET, associated with the MOSFET, may have a channel region of the first conductivity type, the channel region connected between the source electrode and the drift region, and coupled to and adjacent the body region.