Abstract: Implementations of a method of forming a semiconductor package may include forming a plurality of notches into the first side of a semiconductor substrate; forming an organic material over the first side of the semiconductor substrate and into the plurality of notches; forming a cavity into each of a plurality of semiconductor die included in the semiconductor substrate; applying a backmetal into the cavity in each of the plurality of semiconductor die included in the semiconductor substrate; and singulating the semiconductor substrate through the organic material into a plurality of semiconductor packages.

Abstract: Various implementations of a method of forming a semiconductor package may include forming a plurality of notches into the first side of a semiconductor substrate; applying a permanent coating material into the plurality of notches; forming a first organic material over the first side of the semiconductor substrate and the plurality of notches; thinning a second side of the semiconductor substrate opposite the first side one of to or into the plurality of notches; and singulating the semiconductor substrate through the permanent coating material into a plurality of semiconductor packages.

Abstract: A method includes forming a plurality of pockets of semiconductor material in a semiconductor substrate. The plurality of pockets are electrically isolated from the semiconductor substrate. The method further involves forming a metal-oxide-semiconductor field-effect transistor (MOSFET) in a pocket of the plurality of pockets, the MOSFET being a vertical trench shielded gate MOSFET. The method further includes forming an electrical connection to a drain region of the MOSFET vertically below a trench and a mesa of the MOSFET.

Abstract: Implementations of a semiconductor package may include a semiconductor die including a first side and a second side where the first side of the semiconductor die includes one or more electrical contacts; a layer of metal coupled to the second side of the semiconductor; and a stress balance structure coupled to one of the layer of metal or around the one or more electrical contacts.

Abstract: Implementations of a semiconductor package may include a semiconductor die including a first side and a second side where the first side of the semiconductor die includes one or more electrical contacts; a layer of metal coupled to the second side of the semiconductor; and a stress balance structure coupled to one of the layer of metal or around the one or more electrical contacts.

Abstract: Implementations of a semiconductor substrate singulation process may include applying a fluid jet to a material of a die street of a plurality of die streets included in a semiconductor substrate where the semiconductor substrate may include: a plurality of die separated by the plurality of die streets; and a plurality of die support structures coupled thereto; and singulating the plurality of die and the plurality of die support structures at the plurality of die streets using the fluid jet. The fluid jet may be moved only along a length of the die street.

Abstract: Implementations of a packaging system may include a wafer; and a curvature adjustment structure coupled thereto where the curvature adjustment structure may be configured to alter a curvature of a largest planar surface of the wafer.

Abstract: Implementations of methods of singulating a plurality of die included in a substrate may include forming a plurality of die on a first side of a substrate, forming a backside metal layer on a second side of a substrate, applying a photoresist layer over the backside metal layer, patterning the photoresist layer along a die street of the substrate, and etching through the backside metal layer located in the die street of the substrate. The substrate may be exposed through the etch. The method may also include singulating the plurality of die included in the substrate through removing a substrate material in the die street.

Abstract: A method of forming a semiconductor package. Implementations include forming on a die backside an intermediate metal layer having multiple sublayers, each including a metal selected from the group consisting of titanium, nickel, copper, silver, and combinations thereof. A tin layer is deposited onto the intermediate metal layer and is then reflowed with a silver layer of a substrate to form an intermetallic layer having a melting temperature above 260 degrees Celsius and including an intermetallic consisting of silver and tin and/or an intermetallic consisting of copper and tin. Another method of forming a semiconductor package includes forming a bump on each of a plurality of exposed pads of a top side of a die, each exposed pad surrounded by a passivation layer, each bump including an intermediate metal layer as described above and a tin layer coupled to the intermediate metal layer is reflowed to form an intermetallic layer.

Abstract: A method of forming a semiconductor package. Implementations include forming on a die backside an intermediate metal layer having multiple sublayers, each including a metal selected from the group consisting of titanium, nickel, copper, silver, and combinations thereof. A tin layer is deposited onto the intermediate metal layer and is then reflowed with a silver layer of a substrate to form an intermetallic layer having a melting temperature above 260 degrees Celsius and including an intermetallic consisting of silver and tin and/or an intermetallic consisting of copper and tin. Another method of forming a semiconductor package includes forming a bump on each of a plurality of exposed pads of a top side of a die, each exposed pad surrounded by a passivation layer, each bump including an intermediate metal layer as described above and a tin layer coupled to the intermediate metal layer is reflowed to form an intermetallic layer.

Abstract: Implementations of a method of making a plurality of alignment marks on a wafer may include: providing a wafer including an alignment feature on a first side of the wafer. The method may include aligning the wafer using a camera focused on the first side of the wafer. The wafer may be aligned using the alignment feature on the first side of the die. The wafer may also include creating a plurality of alignment marks on a second side of the wafer through lasering, sawing, or scribing.

Abstract: Implementations of die singulation systems and related methods may include forming a plurality of die on a first side of a substrate, forming a seed layer on a second side of a substrate opposite the first side of the substrate, using a shadow mask, applying a mask layer over the seed layer, forming a backside metal layer over the seed layer, removing the mask layer, and singulating the plurality of die included in the substrate through removing substrate material in the die street and through removing seed layer material in the die street.

Abstract: Implementations of a method of making a silicon-on-insulator (SOI) die may include forming a plurality of grooves in a second side of a silicon substrate, depositing an insulative layer directly to the second side of the silicon substrate, the insulative layer filling the plurality of grooves, the silicon substrate comprising a first side opposite the second side, and singulating the silicon substrate through the plurality of grooves into a plurality of SOI die. The insulative layer may be coupled to silicon only through the second side of the silicon substrate.

Abstract: Implementations of a method of making a silicon-on-insulator (SOI) die may include forming a plurality of grooves in a second side of a silicon substrate, depositing an insulative layer directly to the second side of the silicon substrate, the insulative layer filling the plurality of grooves, the silicon substrate comprising a first side opposite the second side, and singulating the silicon substrate through the plurality of grooves into a plurality of SOI die. The insulative layer may be coupled to silicon only through the second side of the silicon substrate.

Abstract: Implementations of a semiconductor package may include one or more semiconductor die directly coupled to only a direct leadframe attach (DLA) leadframe including two or more leads; and a coating covering the one or more semiconductor die and the DLA leadframe where when the semiconductor package is coupled into an immersion cooling enclosure, the coating may be in contact with a dielectric coolant while the two or more leads extend out of the immersion cooling enclosure.

Abstract: A semiconductor device has a first semiconductor die and second semiconductor die with a conductive layer formed over the first semiconductor die and second semiconductor die. The second semiconductor die is disposed adjacent to the first semiconductor die with a side surface and the conductive layer of the first semiconductor die contacting a side surface and the conductive layer of the second semiconductor die. An interconnect, such as a conductive material, is formed across a junction between the conductive layers of the first and second semiconductor die. The conductive layer may extend down the side surface of the first semiconductor die and further down the side surface of the second semiconductor die. An extension of the side surface of the first semiconductor die can interlock with a recess of the side surface of the second semiconductor die. The conductive layer extends over the extension and into the recess.

Abstract: Implementations of methods of forming a plurality of semiconductor die may include forming a damage layer beneath a surface of a die street in a semiconductor substrate, singulating the semiconductor substrate along the die street into a plurality of semiconductor die, and removing one or more particulates in the die street after singulating through applying sonic energy to the plurality of semiconductor die.

Abstract: A semiconductor device has a first semiconductor die and second semiconductor die with a conductive layer formed over the first semiconductor die and second semiconductor die. The second semiconductor die is disposed adjacent to the first semiconductor die with a side surface and the conductive layer of the first semiconductor die contacting a side surface and the conductive layer of the second semiconductor die. An interconnect, such as a conductive material, is formed across a junction between the conductive layers of the first and second semiconductor die. The conductive layer may extend down the side surface of the first semiconductor die and further down the side surface of the second semiconductor die. An extension of the side surface of the first semiconductor die can interlock with a recess of the side surface of the second semiconductor die. The conductive layer extends over the extension and into the recess.

Abstract: Implementations of a packaging system may include a wafer; and a curvature adjustment structure coupled thereto where the curvature adjustment structure may be configured to alter a curvature of a largest planar surface of the wafer.

Abstract: An electromagnetic irradiation system may include a bulb assembly and a light emitting diode panel. The bulb assembly and light emitting diode panel may be coupled over a package tray conveyor and the bulb assembly and the light emitting diode panel may be configured so that a package tray including a plurality of image sensor packages encounters irradiation from the light emitting diode panel prior to encountering irradiation from the bulb assembly.