Abstract: Implementations of a silicon-on-insulator (SOI) die may include a silicon layer including a first side and a second side, and an insulative layer coupled directly to the second side of the silicon layer. The insulative layer may not be coupled to any other silicon layer.

Abstract: Implementations of die singulation systems and related methods may include forming a plurality of die on a first side of a substrate, forming a seed layer on a second side of a substrate opposite the first side of the substrate, using a shadow mask, applying a mask layer over the seed layer, forming a backside metal layer over the seed layer, removing the mask layer, and singulating the plurality of die included in the substrate through removing substrate material in the die street and through removing seed layer material in the die street.

Abstract: Implementations of a semiconductor device may include a first largest planar surface, a second largest planar surface and a thickness between the first largest planar surface and the second largest planar surface; and one of a permanent die support structure, a temporary die support structure, or any combination thereof coupled to one of the first largest planar surface, the second largest planar surface, the thickness, or any combination thereof. The first largest planar surface, the second largest planar surface, and the thickness may be formed by at least two semiconductor die. The warpage of one of the first largest planar surface or the second largest planar surface may be less than 200 microns.

Abstract: Various implementations of a method of forming a semiconductor package may include forming a plurality of notches into the first side of a semiconductor substrate; applying a permanent coating material into the plurality of notches; forming a first organic material over the first side of the semiconductor substrate and the plurality of notches; thinning a second side of the semiconductor substrate opposite the first side one of to or into the plurality of notches; and singulating the semiconductor substrate through the permanent coating material into a plurality of semiconductor packages.

Abstract: Implementations of a method of making a plurality of alignment marks on a wafer may include: providing a wafer including an alignment feature on a first side of the wafer. The method may include aligning the wafer using a camera focused on the first side of the wafer. The wafer may be aligned using the alignment feature on the first side of the die. The wafer may also include creating a plurality of alignment marks on a second side of the wafer through lasering, sawing, or scribing.

Abstract: Implementations of a silicon-in-insulator (SOI) semiconductor die may include a first largest planar surface, a second largest planar surface and a thickness between the first largest planar surface and the second largest planar surface; and one of a permanent die support structure, a temporary die support structure, or any combination thereof coupled to one of the first largest planar surface, the second largest planar surface, the thickness, or any combination thereof. The first largest planar surface, the second largest planar surface, and the thickness may be included through a silicon layer coupled to a insulative layer.

Abstract: Implementations of a semiconductor device may include a first largest planar surface, a second largest planar surface and a thickness between the first largest planar surface and the second largest planar surface; and one of a permanent die support structure, a temporary die support structure, or any combination thereof coupled to one of the first largest planar surface, the second largest planar surface, the thickness, or any combination thereof. The first largest planar surface, the second largest planar surface, and the thickness may be formed by at least two semiconductor die. The warpage of one of the first largest planar surface or the second largest planar surface may be less than 200 microns.

Abstract: Implementations of a semiconductor device may include a first largest planar surface, a second largest planar surface and a thickness between the first largest planar surface and the second largest planar surface; and one of a permanent die support structure, a temporary die support structure, or any combination thereof coupled to one of the first largest planar surface, the second largest planar surface, the thickness, or any combination thereof. The first largest planar surface, the second largest planar surface, and the thickness may be formed by at least two semiconductor die. The warpage of one of the first largest planar surface or the second largest planar surface may be less than 200 microns.

Abstract: Implementations of a semiconductor package may include a semiconductor die including a first side and a second side, the first side of the semiconductor die including one or more electrical contacts; and an organic material covering at least the first side of the semiconductor die. Implementations may include where the one or more electrical contacts extend through one or more openings in the organic material; a metal-containing layer coupled to the one or more electrical contacts; and one or more slugs coupled to one of a first side of the semiconductor die, a second side of the semiconductor die, or both the first side of the semiconductor die and the second side of the semiconductor die.

Abstract: Implementations of a method of forming a semiconductor package may include forming a plurality of notches into the first side of a semiconductor substrate; forming an organic material over the first side of the semiconductor substrate and into the plurality of notches; forming a cavity into each of a plurality of semiconductor die included in the semiconductor substrate; applying a backmetal into the cavity in each of the plurality of semiconductor die included in the semiconductor substrate; and singulating the semiconductor substrate through the organic material into a plurality of semiconductor packages.

Abstract: Various implementations of a method of forming a semiconductor package may include forming a plurality of notches into the first side of a semiconductor substrate; applying a permanent coating material into the plurality of notches; forming a first organic material over the first side of the semiconductor substrate and the plurality of notches; thinning a second side of the semiconductor substrate opposite the first side one of to or into the plurality of notches; and singulating the semiconductor substrate through the permanent coating material into a plurality of semiconductor packages.

Abstract: Various implementations of a method of forming a semiconductor package may include forming a plurality of notches into the first side of a semiconductor substrate; forming an organic material over the first side of the semiconductor substrate and the plurality of notches; thinning a second side of the semiconductor substrate opposite the first side one of to or into the plurality of notches; stress relief etching the second side of the semiconductor substrate; applying a backmetal over the second side of the semiconductor substrate; removing one or more portions of the backmetal through jet ablating the second side of the semiconductor substrate; and singulating the semiconductor substrate through the permanent coating material into a plurality of semiconductor packages.

Abstract: Implementations of a semiconductor package may include a die; a first pad and a second pad, the first pad and the second pad each including a first layer and a second layer where the second layer may be thicker than the first layer. At least a first conductor may be directly coupled to the second layer of the first pad; at least a second conductor may be directly coupled to the second layer of the second pad; and an organic material may cover at least the first side of the die. The at least first conductor and the at least second conductor extend through openings in the organic material where a spacing between the at least first conductor and the at least second conductor may be wider than a spacing between the second layer of the first pad and the second layer of the second pad.

Abstract: Implementations of a method of singulating a plurality of semiconductor die may include forming an opening in a layer of passivation material coupled to a second side of a semiconductor substrate; etching substantially through a thickness of the semiconductor substrate at the opening in the layer of passivation material to form etched sidewalls along the thickness at a plurality of die streets; and jet ablating one or more portions of the layer of passivation material that overhangs the etched sidewalls.

Abstract: Implementations of a method of making a plurality of alignment marks on a wafer may include: providing a wafer including an alignment feature on a first side of the wafer. The method may include aligning the wafer using a camera focused on the first side of the wafer. The wafer may be aligned using the alignment feature on the first side of the die. The wafer may also include creating a plurality of alignment marks on a second side of the wafer through lasering, sawing, or scribing.

Abstract: Implementations of methods of thinning a semiconductor substrate may include: providing a semiconductor substrate having a first surface and a second surface opposing the first surface, the semiconductor substrate having a thickness between the first surface and the second surface. The method may further include inducing damage into a portion of the semiconductor substrate at a first depth into the thickness forming a first damage layer, inducing damage into a portion of the semiconductor substrate at a second depth into the thickness forming a second damage layer, and applying ultrasonic energy to the semiconductor substrate. The method may include separating the semiconductor substrate into three separate thinned portions across the thickness along the first damage layer and along the second damage layer.

Abstract: Implementations of a semiconductor package may include a semiconductor die including a first side and a second side, the first side of the semiconductor die including one or more electrical contacts; and an organic material covering at least the first side of the semiconductor die. Implementations may include where the one or more electrical contacts extend through one or more openings in the organic material; a metal-containing layer coupled to the one or more electrical contacts; and one or more slugs coupled to one of a first side of the semiconductor die, a second side of the semiconductor die, or both the first side of the semiconductor die and the second side of the semiconductor die.

Abstract: Implementations of a silicon-in-insulator (SOI) semiconductor die may include a first largest planar surface, a second largest planar surface and a thickness between the first largest planar surface and the second largest planar surface; and one of a permanent die support structure, a temporary die support structure, or any combination thereof coupled to one of the first largest planar surface, the second largest planar surface, the thickness, or any combination thereof. The first largest planar surface, the second largest planar surface, and the thickness may be included through a silicon layer coupled to a insulative layer.

Abstract: Implementations of a method for aligning a semiconductor wafer for singulation may include: providing a semiconductor wafer having a first side and a second side. The first side of the wafer may include a plurality of die and the plurality of die may be separated by streets. The semiconductor wafer may include an edge ring around a perimeter of the wafer on the second side of the wafer. The wafer may also include a metal layer on the second side of the wafer. The metal layer may substantially cover the edge ring. The method may include grinding the edge ring to create an edge exclusion area and aligning the semiconductor wafer with a saw using a camera positioned in the edge exclusion area on the second side of the wafer. Aligning the wafer may include using three or more alignment features included in the edge exclusion area.

Abstract: Various implementations of a method of forming a semiconductor package may include forming a plurality of notches into the first side of a semiconductor substrate; forming an organic material over the first side of the semiconductor substrate and the plurality of notches; thinning a second side of the semiconductor substrate opposite the first side one of to or into the plurality of notches; stress relief etching the second side of the semiconductor substrate; applying a backmetal over the second side of the semiconductor substrate; removing one or more portions of the backmetal through jet ablating the second side of the semiconductor substrate; and singulating the semiconductor substrate through the permanent coating material into a plurality of semiconductor packages.