Abstract: A composition of matter including a yield stress fluid including self-assembled copolymers each including at least one first type of polymer covalently bonded to at least one second type of polymer, wherein the first type of polymer (“first block”) is microphase separated from the second type of polymer (“second block”), at least one of the first block or the second block has its glass transition temperature less than or equal to 20° C., and the yield stress fluid has a critical yield stress at room temperature or below room temperature, without addition of a solvent for the first block or the second block. Examples of the self-assembled copolymers include a diblock copolymer or bottlebrush copolymer including the first block covalently bonded to the second block.

Abstract: A composition of matter including a crosslinked bottlebrush polymer, wherein the crosslinker units in the composition of matter are soluble with the bottlebrush polymer. In one example, the crosslinked bottlebrush polymer is tailored as a single phase (solvent free) elastomer useful in a capacitive pressure sensing device. A novel embodiment of the present invention further includes demonstration of a universal approach to form solvent-free bottlebrush polymer networks by photo-crosslinking mixtures of well-defined bottlebrush precursors and bis-benzophenone-based additives. This method has been proven effective with a wide variety of different side-chain chemistries.

Abstract: Triazabicylodecene can effectively n-dope a variety of organic semiconductors, including PCBM, thus increasing in-plane conductivities. We synthesized a series of TBD-based n-dopants via an N-alkylation reaction and studied the effect of various alkyl chains on the physical and device properties of the dopants. Combining two TBD moieties on a long alky chain gave a solid dopant, 2TBD-C10, with high thermal stability above 250° C. PCBM films doped by 2TBD-C10 were the most tolerant to thermal annealing and reached in-plane conductivities of 6.5×10?2 S/cm. Furthermore, incorporating 2TBD-C10 doped PCBM as the electron transport layer (ETL) in methylammonium lead triiodide (MAPbI3) based photovoltaics led to a 23% increase in performance, from 11.8% to 14.5% PCE.

Abstract: Triazabicylodecene can effectively n-dope a variety of organic semiconductors, including PCBM, thus increasing in-plane conductivities. We synthesized a series of TBD-based n-dopants via an N-alkylation reaction and studied the effect of various alkyl chains on the physical and device properties of the dopants. Combining two TBD moieties on a long alky chain gave a solid dopant, 2TBD-C10, with high thermal stability above 250° C. PCBM films doped by 2TBD-C10 were the most tolerant to thermal annealing and reached in-plane conductivities of 6.5×10?2 S/cm. Furthermore, incorporating 2TBD-C10 doped PCBM as the electron transport layer (ETL) in methylammonium lead triiodide (MAPbI3) based photovoltaics led to a 23% increase in performance, from 11.8% to 14.5% PCE.

Abstract: A composition of matter including a crosslinked bottlebrush polymer, wherein the crosslinker units in the composition of matter are soluble with the bottlebrush polymer. In one example, the crosslinked bottlebrush polymer is tailored as a single phase (solvent free) elastomer useful in a capacitive pressure sensing device. A novel embodiment of the present invention further includes demonstration of a universal approach to form solvent-free bottlebrush polymer networks by photo-crosslinking mixtures of well-defined bottlebrush precursors and bis-benzophenone-based additives. This method has been proven effective with a wide variety of different side-chain chemistries.

Abstract: Triazabicylodecene can effectively n-dope a variety of organic semiconductors, including PCBM, thus increasing in-plane conductivities. We synthesized a series of TBD-based n-dopants via an N-alkylation reaction and studied the effect of various alkyl chains on the physical and device properties of the dopants. Combining two TBD moieties on a long alky chain gave a solid dopant, 2TBD-C10, with high thermal stability above 250° C. PCBM films doped by 2TBD-C10 were the most tolerant to thermal annealing and reached in-plane conductivities of 6.5×10?2 S/cm. Furthermore, incorporating 2TBD-C10 doped PCBM as the electron transport layer (ETL) in methylammonium lead triiodide (MAPbI3) based photovoltaics led to a 23% increase in performance, from 11.8% to 14.5% PCE.

Abstract: A method for enhancing charge carrier mobility of a field-effect transistor device. The method comprises generating uniaxial nanogrooves on a substrate and blade coating a solution comprising a semiconducting polymer onto the substrate. The polymer solution is spread onto the substrate in a direction parallel to the nanogrooves and a main-chain axis of the polymer is parallel to the nanogrooves. The semiconducting polymer can be then annealed, so that a polymer film is formed which is layered on top of the substrate, with polymer chains aligned parallel to a direction of charge carrier movement.

Abstract: A method for enhancing charge carrier mobility of a field-effect transistor device. The method comprises generating uniaxial nanogrooves on a substrate and blade coating a solution comprising a semiconducting polymer onto the substrate. The polymer solution is spread onto the substrate in a direction parallel to the nanogrooves and a main-chain axis of the polymer is parallel to the nanogrooves. The semiconducting polymer can be then annealed, so that a polymer film is formed which is layered on top of the substrate, with polymer chains aligned parallel to a direction of charge carrier movement.

Abstract: A an organic material is shown including a conjugated core, one or more electron donating moieties, and a non-conjugated spacer coupled between the conjugated core and the electron donating moiety. Methods of forming the organic material include solution based processing. One example of an organic material includes a self-doping n-type organic material.

Abstract: The invention provides methods for making and using end-functionalized conjugated polymers. Embodiments of the invention comprise performing a coupling polymerization in the presence of AA monomers, BB monomers and an end capping compound that can react with a monomer and which is selected to include a functional group. The functional end groups can, for example, comprise polymers or small molecules selected for their ability to produce conjugated polymers that self-assemble into thermodynamically ordered structures. In certain embodiments of the invention, nano-scale morphology of such conjugated polymer compositions can be driven by the phase separation of two covalently bound polymer blocks. These features make the use of conjugated polymers an appealing strategy for exerting control over active layer morphology in semiconducting polymer materials systems.

Abstract: A method of depositing elongated nanostructures that allows accurate positioning and orientation is described. The method involves printing or otherwise depositing elongated nanostructures in a carrier solution. The deposited droplets are also elongated, usually by patterning the surface upon which the droplets are deposited. As the droplet evaporates, the fluid flow within the droplets is controlled such that the nanostructures are deposited either at the edge of the elongated droplet or the center of the elongated droplet. The described deposition technique has particular application in forming the active region of a transistor.

Abstract: In transistor structures such as thin film transistors (TFTs) in an array of cells, a layer of semiconducting oxide material that includes a channel is protected by a protective layer that includes low-temperature encapsulant material. The semiconducting oxide material can be a transition metal oxide material such as zinc oxide, and can be in an active layered substructure that also includes channel end electrodes. The low-temperature encapsulant can, for example, be an organic polymer such as poly(methyl methacrylate) or parylene, deposited on an exposed region of the oxide layer such as by spinning, spincasting, evaporation, or vacuum deposition or an inorganic polymer deposited such as by spinning or liquid deposition. The protective layer can include a lower sublayer of low-temperature encapsulant on the exposed region and an upper sublayer of inorganic material on the lower sublayer. For roll-to-roll processing, a mechanically flexible, low-temperature substrate can be used.

Abstract: In transistor structures such as thin film transistors (TFTs) in an array of cells, a layer of semiconducting oxide material that includes a channel is protected by a protective layer that includes low-temperature encapsulant material. The semiconducting oxide material can be a transition metal oxide material such as zinc oxide, and can be in an active layered substructure that also includes channel end electrodes. The low-temperature encapsulant can, for example, be an organic polymer such as poly(methyl methacrylate) or parylene, deposited on an exposed region of the oxide layer such as by spinning, spincasting, evaporation, or vacuum deposition or an inorganic polymer deposited such as by spinning or liquid deposition. The protective layer can include a lower sublayer of low-temperature encapsulant on the exposed region and an upper sublayer of inorganic material on the lower sublayer. For roll-to-roll processing, a mechanically flexible, low-temperature substrate can be used.

Abstract: In layered structures, channel regions and light-interactive regions can include the same semiconductive polymer material, such as with an organic polymer. A light-interactive region can be in charge-flow contact with a contacting electrode region, and a channel region can, when conductive, provide an electrical connection between the contacting electrode region and other circuitry. For example, free charge carriers can be generated in the light-interactive region, resulting in a capacitively stored signal level; the signal level can be read out to other circuitry by turning on a transistor that includes the channel region. In an array of photosensing cells with organic thin film transistors, an opaque insulating material can be patterned to cover a data line and channel regions of cells along the line, but not extend entirely over the cells' light-interactive regions.

Abstract: In transistor structures such as thin film transistors (TFTs) in an array of cells, a layer of semiconducting oxide material that includes a channel is protected by a protective layer that includes low-temperature encapsulant material. The semiconducting oxide material can be a transition metal oxide material such as zinc oxide, and can be in an active layered substructure that also includes channel end electrodes. The low-temperature encapsulant can, for example, be an organic polymer such as poly(methyl methacrylate) or parylene, deposited on an exposed region of the oxide layer such as by spinning, spin-casting, evaporation, or vacuum deposition or an inorganic polymer deposited such as by spinning or liquid deposition. The protective layer can include a lower sublayer of low-temperature encapsulant on the exposed region and an upper sublayer of inorganic material on the lower sublayer. For roll-to-roll processing, a mechanically flexible, low-temperature substrate can be used.

Abstract: A method of depositing elongated nanostructures that allows accurate positioning and orientation is described. The method involves printing or otherwise depositing elongated nanostructures in a carrier solution. The deposited droplets are also elongated, usually by patterning the surface upon which the droplets are deposited. As the droplet evaporates, the fluid flow within the droplets is controlled such that the nanostructures are deposited either at the edge of the elongated droplet or the center of the elongated droplet. The described deposition technique has particular application in forming the active region of a transistor.

Abstract: A system of diagnosing a printer or photocopying system using a flexible diagnostic sheet is described. In the system, a thin diagnostic sheet including a plurality of sensors formed on the sheet is run through the paper path of the printing system. The printing system subjects the diagnostic sheet to the printing process, including the deposition of fuser oil and toner on the sheet. Sensors on the sheet record various parameters, including but not limited to the amount of fuser oil deposited and the charge on various toner particles. The information is transmitted to service personnel or the printer end user to enable timely repair of the printer.

Abstract: A system, including an improved sensor, for determining toner particle uniformity is described. The sensor measures toner particle charge, typically be having the charge on the toner particle control a current flow through the channel of a thin film transistor. By measuring the charge on many toner particles, the system determines whether sufficient toner degradation has occurred that the toner should be replaced. The sensor is particularly suitable for being formed on a thin diagnostic sheet that is input through the paper path of a printing system.

Abstract: A transistor is formed by applying modifier coatings to source and drain contacts and/or to the channel region between those contacts. The modifier coatings are selected to adjust the surface energy pattern in the source/drain/channel region such that semiconductor printing fluid is not drawn away from the channel region. For example, the modifier coatings for the contacts can be selected to have substantially the same surface energy as the modifier coating for the channel region. Semiconductor printing fluid deposited on the channel region therefore settles in place (due to the lack of a surface energy differential) and forms a relatively thick active semiconductor region between the contacts. Alternatively, the modifier coatings can be selected to have lower surface energies than the modifier coating in the channel region, which actually causes semiconductor printing fluid to be drawn towards the channel region.

Abstract: An embodiment is a method and apparatus of radial contact using nanowires. An inner contact has a center. An outer contact surrounds the inner contact around the center and is spaced from the inner contact by a channel length. A nanowire connects the center of the inner contact and the outer contact in a rotationally invariant geometry. Another embodiment is a method and apparatus of a semiconductor device with bottom gate structure and having radial contact using nanowires. A gate electrode is deposited on a substrate. A dielectric layer is deposited on the substrate and the gate electrode. A source-drain assembly is deposited on the dielectric layer. The source-drain assembly has source and drain electrodes connected via a nanowire in a rotationally invariant geometry. Another embodiment is a method and apparatus of a semiconductor device with top gate structure and having radial contact using nanowires. An isolation barrier layer is deposited on a substrate.