Abstract: A circuit and method of testing a memory and calculating a repair solution for a given address location includes pausing a built in self test (BIST) operation on detection of a failing memory output data of an integrated circuit. During the pause, the circuit and method analyzes “n” number of groups of the failing memory output data during “n” cycles using analysis logic and calculating a repair solution. Normal operations can be resumed.

Abstract: Disclosed is a program for creating a checking-statement which can be subsequently used to validate interconnections between logic blocks in a circuit design. The checking-statement is created by taking a description of how logic blocks in a circuit design are associated to one another (if at all), and cross referencing the description with rule statements specific to each logic block defining the allowable connections between the specific logic block and other logic blocks.

Abstract: A read only memory (ROM) with redundancy and methods of use are provided. The ROM with redundancy includes a programmable array coupled to a repair circuit having one or more redundant repairs. The one or more redundant repairs include a word address match logic block, a data I/O address, and a tri-state buffer. The word address match logic block is provided to the tri-state buffer as a control input and the data I/O address is provided to the tri-state buffer as an input. An output of the tri-state buffer of each redundant repair is provided as a first input to one or more logic devices. One or more data outputs of a ROM bit cell array is provided as a second input to a respective one of the one or more logic devices.

Abstract: Aspects of the invention provide a bypass structure for a memory device for reducing unknown test values, and a related method. In one embodiment, a bypass structure for a memory device is disclosed. The bypass structure includes: a logic gate configured to receive a test signal and a clock signal; and an output latch configured to receive an output of the logic gate, an output of the memory device, and a bypass data signal, wherein the output latch is configured to hold the bypass data signal and bypass the output of the memory device in response to asserting the test signal, such that unknown data from the output of the memory device is bypassed.

Abstract: Used fusebay storage elements are counted so that storage of data may begin at a first unused storage element. Repair register length and a number of previous passes are stored in a fuse header of a fusebay. When a bit of data is sent to the repair register, a repair register position tracker value is changed by one until it reaches a first value. When the first value is reached, a pass tracker value is changed by one. If the first value is not reached, the steps are repeated. A bit counter and/or a page counter may be included.

Abstract: Disclosed is a program for creating a checking-statement which can be subsequently used to validate interconnections between logic blocks in a circuit design. The checking-statement is created by taking a description of how logic blocks in a circuit design are associated to one another (if at all), and cross referencing the description with rule statements specific to each logic block defining the allowable connections between the specific logic block and other logic blocks.

Abstract: Disclosed is an integrated circuit design method that determines maximum direct currents for metal components and uses them as design constraints in the design flow in order to avoid/minimize electromigration failures. Short and long metal components are treated differently for purposes of establishing the design constraints. For a short metal component, the maximum direct current as a function of a given temperature for a given expected lifetime of the integrated circuit is determined, another maximum direct current is determined based on the Blech length, and the higher of these two is selected and used as the design constraint for that short metal component. For a long metal component, only the maximum direct current as a function of the given temperature for the given expected lifetime is determined and used as the design constraint. Also disclosed herein are associated system and program storage device embodiments for designing an integrated circuit.

Abstract: Disclosed are an object locator system, a method and a program storage device. In the embodiments, radio frequency identification (RFID) tags are on objects within a defined area and each RFID tag can be activated by an RF activation signal. When a request (e.g., a verbal or keyed-in request) to locate a specific object is received from a specific user, the required permission to locate the object is verified and, optionally, the identity of the specific user is authenticated. Once the required permission is verified and the identity of the specific user is authenticated, one of three RFID readers transmits an RF activation signal. RF response signals received back at the three RFID readers from the specific object's RFID tag are used to triangulate the position of the specific object. Once determined, the position is communicated (e.g., by map display, verbal message, or text message) to the specific user.

Abstract: Error correction is selectively applied to data, such as repair data to be stored in a fusebay for BIST/BISR on an ASIC or other semiconductor device. Duplicate bit correction and error correction code state machines may be included, and selectors, such as multiplexers, may be used to enable one or both types of correction. Each state machine may include an indicator, such as a “sticky bit,” that may be activated when its type of correction is encountered. The indicator(s) may be used to develop quality and yield control criteria during manufacturing test of parts including embodiments of the invention.

Abstract: A selectable latch has a pair of parallel pass gates (a first parallel pass gate that receives a seed signal, and a second parallel pass gate that receives a data signal). A first latch logic circuit performs logic operations using signals output by the parallel pass gates to produce an updated data signal. An additional pass gate is operatively connected to the first latch logic circuit. An additional pass gate controls passage of the updated data signal. The output of the parallel pass gates and the additional pass gate is connected to a feedback loop. The feedback loop operates as a dynamic latch for high frequency applications or as a static latch for low frequency applications. Thus, the selectable latch comprises two inputs into the pair of parallel pass gates and performs only one of four logical operations on a received data signal.

Abstract: Fuse macros of identical number of pages are serially arranged to form the same number of fusebay pages each having a length equal to the sum of the respective fuse macro page lengths. Each fuse macro has an enable latch configured to allow activation of one fuse macro at a time. A fusebay control device connected to a repair register may store data in and retrieve data from the fusebay. Next available fuse location is determined in programming mode so that data from a next repair pass may start where the last data ended.

Abstract: Used fusebay storage elements are counted so that storage of data may begin at a first unused storage element. Repair register length and a number of previous passes are stored in a fuse header of a fusebay. When a bit of data is sent to the repair register, a repair register position tracker value is changed by one until it reaches a first value. When the first value is reached, a pass tracker value is changed by one. If the first value is not reached, the steps are repeated. A bit counter and/or a page counter may be included.

Abstract: A circuit and method of testing a memory and calculating a repair solution for a given address location includes pausing a built in self test (BIST) operation on detection of a failing memory output data of an integrated circuit. During the pause, the circuit and method analyzes “n” number of groups of the failing memory output data during “n” cycles using analysis logic and calculating a repair solution. Normal operations can be resumed.

Abstract: Error correction is selectively applied to data, such as repair data to be stored in a fusebay for BIST/BISR on an ASIC or other semiconductor device. Duplicate bit correction and error correction code state machines may be included, and selectors, such as multiplexers, may be used to enable one or both types of correction. Each state machine may include an indicator, such as a “sticky bit,” that may be activated when its type of correction is encountered. The indicator(s) may be used to develop quality and yield control criteria during manufacturing test of parts including embodiments of the invention.

Abstract: Fuse macros of identical number of pages are serially arranged to form the same number of fusebay pages each having a length equal to the sum of the respective fuse macro page lengths. Each fuse macro has an enable latch configured to allow activation of one fuse macro at a time. A fusebay control device connected to a repair register may store data in and retrieve data from the fusebay. Next available fuse location is determined in programming mode so that data from a next repair pass may start where the last data ended.

Abstract: An approach for interleaving memory repair data compression and fuse programming operations in a single fusebay architecture is described. In one embodiment, the single fusebay architecture includes a multiple of pages that are used with a partitioning and interleaving approach to handling memory repair data compression and fuse programming operations. In particular, for each page in the single fusebay architecture, a memory repair data compression operation is performed on memory repair data followed by a fuse programming operation performed on the compressed memory repair data.

Abstract: A system and associated data structure that can be utilized within a chip design platform to define the structure of an MBIST architecture. A system for generating a memory built in self test (MBIST) design file in described, including a tool for processing an organization file (Org File), wherein the Org File includes lines of code that dictate a structure of the MBIST design file and conform to a data structure defined by the tool; wherein said data structure provides an infrastructure to describe: associations between MBIST components at a design level; associations between MBIST components and hierarchical test ports at the design level; and a serial order of daisy chains among MBIST components within the design level.

Abstract: Methods of designing and testing restore logic for restoring values to storage elements of power-managed logic circuitry. In one implementation, a design method disclosed includes providing a design of the logic circuitry that, when instantiated, will have a number of states it can be returned to upon repowering-up the logic circuitry. Values held by the storage elements are determined and utilized to categorize the storage elements into categories that allow the development of restore logic that will restore the state of the power-managed logic circuitry that is appropriate to the particular powering-up. The restore logic design is tested by modeling it and the power-managed logic circuitry in a hardware description language and simulating the number of states over a number of test cases. If the design and testing are successful, the restore logic can be optimized for instantiation into an actual integrated circuit.

Abstract: A method is provided for operating an interface between a first unit and a second unit supplying its data. The method includes switching control between LSSD_B and LSSD_C clocks and system clock (CLK) to provide a test mode of operation and a functional mode of operation to optimize setup and hold times depending on conditions under which the unit is operating. In the test mode, data is launched by the LSSD_C clock. In the functional mode, the data is launched by the system clock (CLK) to RAM. A method is also provided to determine which memory inputs should use a circuit that provides adequate setup and hold margins.

Abstract: A circuit for providing a local scan enable signal includes a first transistor having a first gate coupled to a general scan enable signal, a first source and a first drain and a second transistor having a second gate coupled to a scan clock, a second source coupled to the first drain and a second drain. The circuit also includes a third transistor having a third gate coupled to the general scan enable signal, a third drain coupled to the second drain and a third source and an output stabilizer coupled to the second drain, the output stabilizer including a first inverter and a second inverter coupled together in opposite orientations.