Abstract: A cleaning material is disposed over a substrate. The cleaning material includes solid components dispersed within a liquid medium. A force is applied to the solid components within the liquid medium to bring the solid components within proximity to contaminants present on the substrate. The force applied to the solid components can be exerted by an immiscible component within the liquid medium. When the solid components are brought within sufficient proximity to the contaminants, an interaction is established between the solid components and the contaminants. Then, the solid components are moved away from the substrate such that the contaminants having interacted with the solid components are removed from the substrate.

Abstract: An apparatus for cleaning a substrate is disclosed. The apparatus having a first head unit and a second head unit. The first head unit is positioned proximate to the surface of the substrate and has a first row of channels defined within configured to supply a foam to the surface of the substrate. The second head unit is positioned substantially adjacent to the first head unit and proximate to the surface of the substrate. A second and a third row of channels are defined within the second head unit. The second row of channels is configured to supply a fluid to the surface of the substrate. The third row of channels is configured to apply a vacuum to the surface of the substrate.

Abstract: Methods for cleaning using a tri-state body are disclosed. A substrate having a particle deposited thereon is provided. A tri-state body that has a solid portion, liquid portion, and a gas portion is generated. A force is applied over the tri-state body to promulgate an interaction between the solid portion and the particle. The tri-state body is removed along with the particle from the surface of the substrate. The interaction between the solid portion and the particle causing the particle to be removed along with the tri-state body.

Abstract: A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.

Abstract: A proximity head including a head surface. The head surface including a first flat region and a plurality of first conduits. Each one of the plurality of first conduits being defined by corresponding one of a plurality of first discrete holes. The plurality of first discrete holes residing in the head surface and extending through the first flat region. The head surface also including a second flat region and a plurality of second conduits. The plurality of second conduits being defined by a corresponding plurality of second discrete holes that reside in the head surface and extend through the second flat region. The head surface also including a third flat region disposed between and adjacent to the first flat region and the second flat region and a plurality of third conduits. The plurality of third conduits being defined by a corresponding plurality of third discrete holes that reside in the head surface and extend through the third flat region.

Abstract: Among the many embodiment, in one embodiment, a method for processing a substrate is disclosed which includes generating a fluid layer on a surface of the substrate, the fluid layer defining a fluid meniscus. The generating includes moving a head in proximity to the surface, applying a fluid from the head to the surface while the head is in proximity to the surface of the substrate to define the fluid layer, and removing the fluid from the surface through the proximity head by a vacuum. The fluid travels along the fluid layer between the head and the substrate at a velocity that increases as the head is in closer proximity to the surface.

Abstract: Methods and apparatus for cleaning wafer surfaces are provided, especially for cleaning surfaces of patterned wafers. The cleaning apparatus includes a cleaning head with channels on the surface facing the patterned wafers which has a predominant pattern. Cleaning material flowing the channels exerts a shear force on the surface of a patterned wafer, which is oriented in a specific direction to the cleaning head. The shear force and the specific orientation between the patterned wafer and the cleaning head improve the removal efficiency of the surface contaminants.

Abstract: A method and system for cleaning opposed surfaces of a semiconductor wafer having particulate matter thereon. The method includes generating relative movement between a fluid and the substrate. The relative movement is in a direction that is transverse to a normal to one of the opposed surfaces and creates two spaced-apart flows. Each of the flows is adjacent to one of the opposed surfaces that is different from the opposed surface that is adjacent to the remaining flow of the plurality of flows. The fluid has coupling elements entrained therein, and the relative movement is established to impart sufficient drag upon a subset of the coupling elements to create movement of the coupling elements of the subset within the fluid. In this manner, a quantity of the drag is imparted upon the particulate matter to cause the particulate matter to move with respect to the substrate.

Abstract: Systems and methods for cleaning particulate contaminants adhered to wafer surfaces are provided. A cleaning media including dispersed coupling elements suspended within the cleaning media is applied over a wafer surface. External energy is applied to the cleaning media to generate periodic shear stresses within the media. The periodic shear stresses impart momentum and/or drag forces on the coupling elements causing the coupling elements to interact with the particulate contaminants to remove the particulate contaminants from the wafer surfaces.

Abstract: Among the many embodiment, in one embodiment, a method for processing a substrate is disclosed which includes generating a fluid layer on a surface of the substrate, the fluid layer defining a fluid meniscus. The generating includes moving a head in proximity to the surface, applying a fluid from the head to the surface while the head is in proximity to the surface of the substrate to define the fluid layer, and removing the fluid from the surface through the proximity head by a vacuum. The fluid travels along the fluid layer between the head and the substrate at a velocity that increases as the head is in closer proximity to the surface.

Abstract: A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.

Abstract: A method for processing a substrate is provided which includes generating a meniscus on the surface of the substrate and applying photolithography light through the meniscus to enable photolithography processing of a surface of the substrate.

Abstract: A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.

Abstract: A system and method of moving a meniscus from a first surface to a second surface includes forming a meniscus between a head and a first surface. The meniscus can be moved from the first surface to an adjacent second surface, the adjacent second surface being parallel to the first surface. The system and method of moving the meniscus can also be used to move the meniscus along an edge of a substrate.

Abstract: A method for processing a substrate using a proximity head is disclosed. The method is initiated by, providing a head with a head surface positioned proximate to a surface of the substrate. The head has a width and a length, and the head has a plurality of ports that are configured in rows along the length of the head. The plurality of rows can extend over a width of the head, and there is a first group of ports configured to dispense a first fluid. The first fluid is dispensed to the surface of the substrate forming a meniscus between the surface of the substrate and the surface of the head. The method also includes delivering gaseous carbon dioxide from a second group of ports of the head to an interface between the meniscus and the substrate. The carbon dioxide assists in promoting a reduced surface tension on the meniscus relative to surface of the substrate.

Abstract: In one embodiment, a substrate preparation system is provided. The system includes a brush, a front head, and a back head. The brush is configured to brush scrub a back surface of a substrate using a brush scrubbing chemistry. The front head is defined in close proximity to a front surface of the substrate while the back head is defined in close proximity to the back surface of the substrate. The back head is positioned substantially opposite to the front head. The front head and the back head are applied as a pair to the substrate when the brush is apart from the substrate.

Abstract: Among the many embodiment, in one embodiment, a method for processing a substrate is disclosed which includes generating a fluid layer on a surface of the substrate, the fluid layer defining a fluid meniscus. The generating includes moving a head in proximity to the surface, applying a fluid from the head to the surface while the head is in proximity to the surface of the substrate to define the fluid layer, and removing the fluid from the surface through the proximity head by a vacuum. The fluid travels along the fluid layer between the head and the substrate at a velocity that increases as the head is in closer proximity to the surface.

Abstract: A method for processing a substrate is provided which includes generating a meniscus on the surface of the substrate and applying photolithography light through the meniscus to enable photolithography processing of a surface of the substrate.

Abstract: A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.

Abstract: A system and method for processing a wafer includes applying a process to the wafer. The process being supported by a surface tension gradient device. A result of the process is monitored. The monitored result is output.