Abstract: A system and method of reducing defects in chemical mechanical planarization of polysilicon is disclosed. The system includes first and second polishing stations each having a different hardness polishing pad and a different slurry. A cleaning station using a dilute SC1 chemistry is also included. The process includes polishing a polysilicon wafer on a first polishing station using a hard polishing pad and then polishing the polysilicon wafer on a second polishing station having a soft pad. The polysilicon wafer may then be directly placed in a scrubber using a dilute SC1 chemistry.

Abstract: A method and apparatus for processing wafer edges is disclosed. Pressure applied to the wafer at one end of A brush/pad assembly is greater than at the opposite end of the brush/pad assembly. The increased pressure causes wafer rotation to slow or to reverse direction as compared to less pressure applied by the brush/pad assembly. In one embodiment slowed rotation causes a difference in tangential velocity between the roller(s) and the wafer edge/bevel that causes pads in the roller(s) to process the edge/bevel of the wafer. In another embodiment, the opposite direction of rotation causes the wafer to rotate counter to rollers otherwise causing the wafer to rotate. Cleaning surfaces in the rollers clean the edges of the wafer whether rotation is slowed or reversed.

Abstract: A method and apparatus for processing wafer edges is disclosed. Pressure applied to the wafer at one end of A brush/pad assembly is greater than at the opposite end of the brush/pad assembly. The increased pressure causes wafer rotation to slow or to reverse direction as compared to less pressure applied by the brush/pad assembly. In one embodiment slowed rotation causes a difference in tangential velocity between the roller(s) and the wafer edge/bevel that causes pads in the roller(s) to process the edge/bevel of the wafer. In another embodiment, the opposite direction of rotation causes the wafer to rotate counter to rollers otherwise causing the wafer to rotate. Cleaning surfaces in the rollers clean the edges of the wafer whether rotation is slowed or reversed.

Abstract: A method and apparatus for processing wafer edges is disclosed. Pressure applied to the wafer at one end of A brush/pad assembly is greater than at the opposite end of the brush/pad assembly. The increased pressure causes wafer rotation to slow or to reverse direction as compared to less pressure applied by the brush/pad assembly. In one embodiment slowed rotation causes a difference in tangential velocity between the roller(s) and the wafer edge/bevel that causes pads in the roller(s) to process the edge/bevel of the wafer. In another embodiment, the opposite direction of rotation causes the wafer to rotate counter to rollers otherwise causing the wafer to rotate. Cleaning surfaces in the rollers clean the edges of the wafer whether rotation is slowed or reversed.

Abstract: A semiconductor processing system, such as a system for scrubbing both sides of a wafer at the same time, that includes a brush box containment apparatus for use with highly-acidic or other volatile chemical solutions, a roller positioning apparatus and a (brush) placement device.

Abstract: A method and apparatus for processing a wafer are described. In one embodiment, a method for processing a wafer comprises applying a sealing mechanism to the wafer to create multiple separate, sealed portions of the wafer, and applying a plurality of different chemistries to multiple separate, sealed portions of the wafer through the sealing mechanism.

Abstract: A cleaning method and apparatus using very dilute hydrofluoric acid (BF) for cleaning silicon wafers and semiconductor substrates. The HF is delivered to the core of a brush where the solution is absorbed by the brush and then applied by the brush onto the substrate. This delivery system applies the chemical solutions uniformly to the semiconductor substrate and reduces the volumes of chemical solutions used in a scrubbing process. The process of the present invention uses very dilute HF and allows a thin oxide to be etched but not completely removed so as to maintain a hydrophilic surface state. Thus, this invention presents a chemical mechanical cleaning process with in-situ etching with the use of PVA brushes on a brush scrubber. Very accurate control of etch rate is obtained and, therefore, makes this process suitable to multiple cleaning applications of silicon wafers and semiconductor substrates.

Abstract: A method and apparatus for conditioning the surface of a polishing pad used to polish a substrate, such as a semiconductor wafer. A conditioning apparatus uses two or more end effectors to abrade and/or remove the polishing byproducts from the surface of the pad. Different types of conditioning performance can be achieved when the end effectors are employed individually, sequentially, or simultaneously during a polishing process.

Abstract: A method and apparatus for conditioning the surface of a polishing pad used to polish a substrate, such as a semiconductor wafer. A conditioning apparatus uses two or more end effectors to abrade and/or remove the polishing byproducts from the surface of the pad. Different types of conditioning performance can be achieved when the end effectors are employed individually, sequentially or simultaneously during a polishing process.

Abstract: A semiconductor processing system, such as a system for scrubbing both sides of a wafer at the same time, that includes a brush box containment apparatus for use with highly-acidic or other volatile chemical solutions, a roller positioning apparatus and a (brush) placement device.

Abstract: A cleaning method and apparatus using very dilute hydrofluoric acid (HF) for cleaning silicon wafers and semiconductor substrates. The HF is delivered to the core of a brush where the solution is absorbed by the brush and then applied by the brush onto the substrate. This delivery system applies the chemical solutions uniformly to the semiconductor substrate and reduces the volumes of chemical solutions used in a scrubbing process. The process of the present invention uses very dilute HF and allows a thin oxide to be etched but not completely removed so as to maintain a hydrophilic surface state. Thus, this invention presents a chemical mechanical cleaning process with in-situ etching with the use of PVA brushes on a brush scrubber. Very accurate control of etch rate is obtained and, therefore, makes this process suitable to multiple cleaning applications of silicon wafers and semiconductor substrates.