Abstract: A system and method of moving a meniscus from a first surface to a second surface includes forming a meniscus between a head and a first surface. The meniscus can be moved from the first surface to an adjacent second surface, the adjacent second surface being parallel to the first surface. The system and method of moving the meniscus can also be used to move the meniscus along an edge of a substrate.

Abstract: In one of the many embodiments, a method for processing a substrate is disclosed which includes generating a first fluid meniscus and a second fluid meniscus at least partially surrounding the first fluid meniscus wherein the first fluid meniscus and the second fluid meniscus are generated on a surface of the substrate.

Abstract: In one of the many embodiments, a method for processing a substrate is disclosed which includes generating a first fluid meniscus and a second fluid meniscus at least partially surrounding the first fluid meniscus wherein the first fluid meniscus and the second fluid meniscus are generated on a surface of the substrate.

Abstract: A method for cleaning a semiconductor wafer is provided which includes plasma etching a feature into a low K dielectric layer having a photoresist mask where the plasma etching generates etch residues. The method also includes ashing the semiconductor wafer to remove the photoresist mask where the ashing generating ashing residues. The method further includes removing the etching residues and the ashing residues from the low K dielectric layer where the removing is enhanced by scrubbing the low K dielectric layer of the semiconductor wafer with a wet brush that applies a fluid mixture including a cleaning chemistry and a wetting agent.

Abstract: A method for cleaning and drying a front and a back surface of a substrate is provided. The method includes brush scrubbing the back surface of the substrate using a brush scrubbing fluid chemistry. The method further includes applying a front meniscus onto the front surface of the substrate upon completing the brush scrubbing of the back surface. The front meniscus includes a front cleaning chemistry that is chemically compatible with the brush scrubbing fluid chemistry.

Abstract: Among the many embodiment, in one embodiment, a method for processing a substrate is disclosed which includes generating a fluid layer on a surface of the substrate, the fluid layer defining a fluid meniscus. The generating includes moving a head in proximity to the surface, applying a fluid from the head to the surface while the head is in proximity to the surface of the substrate to define the fluid layer, and removing the fluid from the surface through the proximity head by a vacuum. The fluid travels along the fluid layer between the head and the substrate at a velocity that increases as the head is in closer proximity to the surface.

Abstract: A system and method for planarizing and controlling non-uniformity on a patterned semiconductor substrate includes receiving a patterned semiconductor substrate. The patterned semiconductor substrate having a conductive interconnect material filling multiple features in the pattern. The conductive interconnect material having an overburden portion. A bulk of the overburden portion is removed and a remaining portion of the overburden portion has a non-uniformity. The non-uniformity is mapped, optimal solution determined and a dynamic liquid meniscus etch process recipe is developed to correct the non-uniformity. A dynamic liquid meniscus etch process, using the dynamic liquid meniscus etch process recipe, is applied to correct the non-uniformity to substantially planarize the remaining portion of the overburden portion.

Abstract: A megasonic module for substrate processing is provided. Embodiments of the present invention include a tank configured to hold processing fluids in which the substrate is submerged, and a lid configured to mate with and seal the tank. At least two megasonic transducers are positioned within the megasonic module to direct megasonic energy to each of an active surface and a backside surface of the substrate. A pair of drive wheels are configured to receive an edge of the substrate to support and rotate the substrate in a horizontal orientation between the at least two megasonic transducers. The substrate is supported against the pair of drive wheels by a substrate stabilizing arm/wheel which also allows the rotation of the substrate. A drive motor is configured to rotate the pair of drive wheels, and a fluid recirculation system provides for temperature control and use of a plurality of processing fluids.

Abstract: A system and method for re-circulating processing fluids in a substrate processing system is provided. A fluid re-circulation system for a brush box processing tool includes a supply tank into which processing chemicals, DI water, or other processing fluids are introduced into the system from an external source. Processing chemicals are provided to the brush box and dispensed to process a substrate. Dispensed fluids drain from the brush box into a diverter through which fluids either flow to waste, or into a collection tank. Fluids from the collection tank flow into the supply tank to re-circulate for wafer processing. The re-circulation system includes filters for maintaining chemical purity, and chemical concentration is monitored and adjusted as necessary.

Abstract: A system and method for processing a wafer includes applying a process to the wafer. The process being supported by a surface tension gradient device. A result of the process is monitored. The monitored result is output.

Abstract: A method for cleaning a semiconductor substrate is provided. The method initiates with generating acoustic energy oriented in a substantially perpendicular direction to a surface of a semiconductor substrate. Then, acoustic energy oriented in a substantially parallel direction to the surface of the semiconductor substrate is generated. Each orientation of the acoustic energy may be simultaneously generated or alternately generated. A system and an apparatus for cleaning a semiconductor substrate are also provided. Additionally, a method and a system for electroless plating are provided.

Abstract: Methods for rinsing and drying a substrate are provided. In one example, a method for rinsing and drying a substrate includes providing a substrate for processing and securing the substrate in a hollow spin chuck. The hollow spin chuck with the substrate positioned therein is rotated at a first rate of rotation while a rinsing agent and a surface tension modifying agent are dispensed at a position that is an approximate center of the spinning substrate on both an active surface and a backside surface of the substrate. The dispensing is moved from the approximate center of the spinning substrate radially outward towards a periphery of the substrate. The dispensing is then discontinued, and the hollow spin chuck with the substrate positioned therein is rotated at a second rate of rotation.

Abstract: A method for cleaning top and bottom surfaces of a semiconductor substrate is provided. The method includes scrubbing top and bottom surfaces of the semiconductor wafer with top and bottom brushes, respectively. Top and bottom brushes are saturated and supplied with a scrubbing fluid. The top and bottom brushes are squeezed so as to press out excess scrubbing fluid by continuing to apply top and bottom brushes against top and bottom surfaces of the semiconductor substrate, respectively, but without supplying the scrubbing fluid. Top and bottom brushes are respectively moved away from the top and bottom surfaces of the semiconductor substrate. The top brush is rotated so as to prevent dripping onto the top surface of the semiconductor substrate. Top and bottom surfaces of the semiconductor substrate are rinsed using a rinse fluid while continuing to rotate the top brush that was squeezed to press out the excess scrubbing fluid.

Abstract: A system and method of moving a meniscus from a first surface to a second surface includes forming a meniscus between a head and a first surface. The meniscus can be moved from the first surface to an adjacent second surface, the adjacent second surface being parallel to the first surface. The system and method of moving the meniscus can also be used to move the meniscus along an edge of a substrate.

Abstract: A method for using a monitor substrate to determine effectiveness of a cleaning operation is provided. The method includes selecting a substrate from a lot of substrates and inspecting a surface of the substrate to determine a roughness profile of the substrate. The monitor substrate is then processed through a cleaning operation, and the monitor substrate is patterned with die regions throughout. Each of the die regions has a plurality of areas defining distinct roughness simulations. The method the proceeds to inspecting the monitor substrate at one die region and at one of the plurality of areas in the one die region that most closely resembles the roughness profile of the substrate. The inspecting of the monitor substrate is configured to yield data regarding cleaning performance of the cleaning operation.

Abstract: An asymmetric double-sided substrate scrubber is provided. The asymmetric double-sided substrate scrubber includes a first roller and a second roller. The first roller is constructed from a first material having a first density and the second roller is constructed from a second material having a second density. The second density is designed to be greater than the first density. The first roller is designed to be applied onto a first side of a substrate with a first force and the second roller is designed to be applied onto a second side of the substrate with a second force. The second force is configured to be substantially equivalent to the first force.

Abstract: A wheel for a conveyor system for transporting semiconductor wafers includes a first section for supporting a semiconductor wafer at a first level and a second section for supporting the wafer at a second level, with the first level being higher than the second level. In one embodiment, each of the first and second sections is semicircular. The first level may be substantially the same as a level at which the wafer is subjected to a wafer cleaning operation, and the distance the second level is below the first level may be in a range from about one sixteenth of an inch to about three sixteenths of an inch. A conveyor system for transporting wafers and a method for transferring wafers from a conveyor system to a wafer processing station also are described.

Abstract: A system and method of reducing defects in chemical mechanical planarization of polysilicon is disclosed. The system includes first and second polishing stations each having a different hardness polishing pad and a different slurry. A cleaning station using a dilute SC1 chemistry is also included. The process includes polishing a polysilicon wafer on a first polishing station using a hard polishing pad and then polishing the polysilicon wafer on a second polishing station having a soft pad. The polysilicon wafer may then be directly placed in a scrubber using a dilute SC1 chemistry.

Abstract: A wheel for a conveyor system for transporting semiconductor wafers includes a first section for supporting a semiconductor wafer at a first level and a second section for supporting the wafer at a second level, with the first level being higher than the second level. In one embodiment, each of the first and second sections is semicircular. The first level may be substantially the same as a level at which the wafer is subjected to a wafer cleaning operation, and the distance the second level is below the first level may be in a range from about one sixteenth of an inch to about three sixteenths of an inch. A conveyor system for transporting wafers and a method for transferring wafers from a conveyor system to a wafer processing station also are described.

Abstract: A wheel for a conveyor system for transporting semiconductor wafers includes a first section for supporting a semiconductor wafer at a first level and a second section for supporting the wafer at a second level, with the first level being higher than the second level. In one embodiment, each of the first and second sections is semicircular. The first level may be substantially the same as a level at which the wafer is subjected to a wafer cleaning operation, and the distance the second level is below the first level may be in a range from about one sixteenth of an inch to about three sixteenths of an inch. A conveyor system for transporting wafers and a method for transferring wafers from a conveyor system to a wafer processing station also are described.