Abstract: An improved retrofit assembly for ground support equipment providing autonomous operation of the logistics ground support equipment (GSE). The assembly has a refit control system attached to the GSE (with a vehicle dynamics control processor and a data preprocessing control processor), retrofitted proprioceptive sensors coupled to the vehicle dynamics control processor monitoring operating parameters and characteristics of the GSE, retrofitted exteroceptive sensors coupled to the data preprocessing control processor that monitor an exterior environment of the GSE, and refit actuators for different control elements on the GSE and to autonomously alter motion of the GSE. The refit control system programmatically receives sensor data from the proprioceptive sensors and exteroceptive sensors; optimizes a path for the GSE based upon the different sensor data; and activates at least one of the actuators according to the optimized path for the GSE.

Abstract: An improved retrofit assembly for ground support equipment providing autonomous operation of the logistics ground support equipment (GSE). The assembly has a refit control system attached to the GSE (with a vehicle dynamics control processor and a data preprocessing control processor), retrofitted proprioceptive sensors coupled to the vehicle dynamics control processor monitoring operating parameters and characteristics of the GSE, retrofitted exteroceptive sensors coupled to the data preprocessing control processor that monitor an exterior environment of the GSE, and refit actuators for different control elements on the GSE and to autonomously alter motion of the GSE. The refit control system programmatically receives sensor data from the proprioceptive sensors and exteroceptive sensors; optimizes a path for the GSE based upon the different sensor data; and activates at least one of the actuators according to the optimized path for the GSE.

Abstract: An improved retrofit assembly for ground support equipment providing autonomous operation of the logistics ground support equipment (GSE). The assembly has a refit control system attached to the GSE (with a vehicle dynamics control processor and a data preprocessing control processor), retrofitted proprioceptive sensors coupled to the vehicle dynamics control processor monitoring operating parameters and characteristics of the GSE, retrofitted exteroceptive sensors coupled to the data preprocessing control processor that monitor an exterior environment of the GSE, and refit actuators for different control elements on the GSE and to autonomously alter motion of the GSE. The refit control system programmatically receives sensor data from the proprioceptive sensors and exteroceptive sensors; optimizes a path for the GSE based upon the different sensor data; and activates at least one of the actuators according to the optimized path for the GSE.

Abstract: Enhanced systems and methods for collision avoidance of a high value asset with reflective beacons around it using multi-sensor data fusion on a mobile industrial vehicle. The system has a sensing processing system with a LiDAR and camera sensors, and a multi-processor module responsive to the different sensors. The sensing processing system fuses the different sensor data to locate the reflective beacons. A model predictive controller on the vehicle determines possible control solutions where each defines a threshold allowable speed for the vehicle at discrete moments based upon an estimated path to a breaching point projected from the reflective beacons, and then identifies an optimal one of the control solutions based upon a performance cost function and associated with an optimal threshold allowable speed. The system has a vehicle actuator configured to respond and alter vehicle movement to avoid a collision when the vehicle exceeds the optimal threshold allowable speed.

Abstract: An improved retrofit assembly for ground support equipment providing autonomous operation of the logistics ground support equipment (GSE). The assembly has a refit control system attached to the GSE (with a vehicle dynamics control processor and a data preprocessing control processor), retrofitted proprioceptive sensors coupled to the vehicle dynamics control processor monitoring operating parameters and characteristics of the GSE, retrofitted exteroceptive sensors coupled to the data preprocessing control processor that monitor an exterior environment of the GSE, and refit actuators for different control elements on the GSE and to autonomously alter motion of the GSE. The refit control system programmatically receives sensor data from the proprioceptive sensors and exteroceptive sensors; optimizes a path for the GSE based upon the different sensor data; and activates at least one of the actuators according to the optimized path for the GSE.

Abstract: Enhanced systems and methods for collision avoidance of a high value asset with reflective beacons around it using multi-sensor data fusion on a mobile industrial vehicle. The system has a sensing processing system with a LiDAR and camera sensors, and a multi-processor module responsive to the different sensors. The sensing processing system fuses the different sensor data to locate the reflective beacons. A model predictive controller on the vehicle determines possible control solutions where each defines a threshold allowable speed for the vehicle at discrete moments based upon an estimated path to a breaching point projected from the reflective beacons, and then identifies an optimal one of the control solutions based upon a performance cost function and associated with an optimal threshold allowable speed. The system has a vehicle actuator configured to respond and alter vehicle movement to avoid a collision when the vehicle exceeds the optimal threshold allowable speed.

Abstract: The present invention provides a novel system and method for a power management strategy for series hybrid power systems, such as for vehicles, with limited electrical energy storage capacity that distributes instantaneous power between a source of chemical energy and a small energy storage system (ESS) efficiently. The invention provides for minimizing the energy storage system while simultaneously allowing the chemical to electrical energy converter, e.g., an internal combustion motor/engine paired with an electrical generator and/or a fuel cell power source, to operate in pre-defined efficient regions of the power user's, or vehicle's, fuel efficiency map.

Abstract: The present invention provides a novel system and method for a power management strategy for series hybrid power systems, such as for vehicles, with limited electrical energy storage capacity that distributes instantaneous power between a source of chemical energy and a small energy storage system (ESS) efficiently. The invention provides for minimizing the energy storage system while simultaneously allowing the chemical to electrical energy converter, e.g., an internal combustion motor/engine paired with an electrical generator and/or a fuel cell power source, to operate in pre-defined efficient regions of the power user's, or vehicle's, fuel efficiency map.

Abstract: A method for rendering a half-bridge circuit containing normally on switches such as junction field effect transistors (JFETs) inherently safe from uncontrolled current flow is described. The switches can be made from silicon carbide or from silicon. The methods described herein allow for the use of better performing normally on switches in place of normally off switches in integrated power modules thereby improving the efficiency, size, weight, and cost of the integrated power modules. As described herein, a power supply can be added to the gate driver circuitry. The power supply can be self starting and self oscillating while being capable of deriving all of its source energy from the terminals supplying electrical potential to the normally on switch through the gate driver. The terminal characteristics of the normally on switch can then be coordinated to the input-to-output characteristics of the power supply.

Abstract: An optically active material is used to create power devices and circuits having significant performance advantages over conventional methods for affecting optical control of power electronics devices and circuits. A silicon-carbide optically active material is formed by compensating shallow donors with the boron related D-center. The resulting material can be n-type or p-type but it is distinguished from other materials by the ability to induce persistent photoconductivity in it when illuminated by electromagnetic radiation with a photon energy in excess of the threshold energy required to photoexcite electrons from the D-center to allowed states close to the conduction band edge, which varies from polytype to polytype.

Abstract: An optically active material is used to create power devices and circuits having significant performance advantages over conventional methods for affecting optical control of power electronics devices and circuits. A silicon-carbide optically active material is formed by compensating shallow donors with the boron related D-center. The resulting material can be n-type or p-type but it is distinguished from other materials by the ability to induce persistent photoconductivity in it when illuminated by electromagnetic radiation with a photon energy in excess of the threshold energy required to photoexcite electrons from the D-center to allowed states close to the conduction band edge, which varies from polytype to polytype.

Abstract: A method of making a semi-insulating epitaxial layer includes implanting a substrate or a first epitaxial layer formed on the substrate with boron ions to form a boron implanted region on a surface of the substrate or on a surface of the first epitaxial layer, and growing a second epitaxial layer on the boron implanted region of the substrate or on the boron implanted region of the first epitaxial layer to form a semi-insulating epitaxial layer.

Abstract: A method for rendering a half-bridge circuit containing normally on switches such as junction field effect transistors (JFETs) inherently safe from uncontrolled current flow is described. The switches can be made from silicon carbide or from silicon. The methods described herein allow for the use of better performing normally on switches in place of normally off switches in integrated power modules thereby improving the efficiency, size, weight, and cost of the integrated power modules. As described herein, a power supply can be added to the gate driver circuitry. The power supply can be self starting and self oscillating while being capable of deriving all of its source energy from the terminals supplying electrical potential to the normally on switch through the gate driver. The terminal characteristics of the normally on switch can then be coordinated to the input-to-output characteristics of the power supply.

Abstract: An optically active material is used to create power devices and circuits having significant performance advantages over conventional methods for affecting optical control of power electronics devices and circuits. A silicon-carbide optically active material is formed by compensating shallow donors with the boron related D-center. The resulting material can be n-type or p-type but it is distinguished from other materials by the ability to induce persistent photoconductivity in it when illuminated by electromagnetic radiation with a photon energy in excess of the threshold energy required to photoexcite electrons from the D-center to allowed states close to the conduction band edge, which varies from polytype to polytype.

Abstract: A method for rendering a half-bridge circuit containing normally on switches such as junction field effect transistors (JFETs) inherently safe from uncontrolled current flow is described. The switches can be made from silicon carbide or from silicon. The methods described herein allow for the use of better performing normally on switches in place of normally off switches in integrated power modules thereby improving the efficiency, size, weight, and cost of the integrated power modules. As described herein, a power supply can be added to the gate driver circuitry. The power supply can be self starting and self oscillating while being capable of deriving all of its source energy from the terminals supplying electrical potential to the normally on switch through the gate driver. The terminal characteristics of the normally on switch can then be coordinated to the input-to-output characteristics of the power supply.

Abstract: A junction barrier Schottky (JBS) rectifier device and a method of making the device are described. The device comprises an epitaxially grown first n-type drift layer and p-type regions forming p+-n junctions and self-planarizing epitaxially over-grown second n-type drift regions between and, optionally, on top of the p-type regions. The device may include an edge termination structure such as an exposed or buried P+ guard ring, a regrown or implanted junction termination extension (JTE) region, or a “deep” mesa etched down to the substrate. The Schottky contact to the second n-type drift region and the ohmic contact to the p-type region together serve as an anode. The cathode can be formed by ohmic contact to the n-type region on the backside of the wafer. The devices can be used in monolithic digital, analog, and microwave integrated circuits.

Abstract: An optically active material is used to create power devices and circuits having significant performance advantages over conventional methods for affecting optical control of power electronics devices and circuits. A silicon-carbide optically active material is formed by compensating shallow donors with the boron related D-center. The resulting material can be n-type or p-type but it is distinguished from other materials by the ability to induce persistent photoconductivity in it when illuminated by electromagnetic radiation with a photon energy in excess of the threshold energy required to photoexcite electrons from the D-center to allowed states close to the conduction band edge, which varies from polytype to polytype.

Abstract: A method of making a semi-insulating epitaxial layer includes implanting a substrate or a first epitaxial layer formed on the substrate with boron ions to form a boron implanted region on a surface of the substrate or on a surface of the first epitaxial layer, and growing a second epitaxial layer on the boron implanted region of the substrate or on the boron implanted region of the first epitaxial layer to form a semi-insulating epitaxial layer.

Abstract: An optically active material is used to create power devices and circuits having significant performance advantages over conventional methods for affecting optical control of power electronics devices and circuits. A silicon-carbide optically active material is formed by compensating shallow donors with the boron related D-center. The resulting material can be n-type or p-type but it is distinguished from other materials by the ability to induce persistent photoconductivity in it when illuminated by electromagnetic radiation with a photon energy in excess of the threshold energy required to photoexcite electrons from the D-center to allowed states close to the conduction band edge, which varies from polytype to polytype.

Abstract: A method of making a semi-insulating epitaxial layer includes implanting a substrate or a first epitaxial layer formed on the substrate with boron ions to form a boron implanted region on a surface of the substrate or on a surface of the first epitaxial layer, and growing a second epitaxial layer on the boron implanted region of the substrate or on the boron implanted region of the first epitaxial layer to form a semi-insulating epitaxial layer.