Abstract: The invention relates to methods of modulating sleep.

Abstract: The invention relates to novel compounds and methods of using them for modulating sleep.

Abstract: The invention relates to novel compounds and methods of using them for modulating sleep.

Abstract: A method (and resulting structure) for fabricating a silicide for a semiconductor device, includes depositing a metal or an alloy thereof on a silicon substrate, reacting the metal or the alloy to form a first silicide phase, etching any unreacted metal, depositing a silicon cap layer over the first silicide phase, reacting the silicon cap layer to form a second silicide phase, for the semiconductor device, and etching any unreacted silicon. The substrate can be either a silicon-on-insulator (SOI) substrate or a bulk silicon substrate.

Abstract: A unitary or modular, pre-cast, drive-down pit system suitable for use in a heavy equipment wash installation. The completed pit collects runoff generated by the washing of heavy equipment such as construction, industrial, farming, or road-building equipment. The pre-cast concrete separation unit and separate wall sections have tongue and groove mating ends that facilitate assembling the pit and provide for sealing against leakage of water. The wall sections have built-in rebar attachment and water block elements at an angle so as to provide for a strong and waterproof bond with the ramp floor. The ramp floor is concrete, poured after installation of the separation unit and the wall sections to complete the finished drive-down pit. The separation unit has up to four chambers: a primary solids collection section; a secondary solids settling chamber; a free oil separating section; and a pump water holding section.

Abstract: The invention relates to novel doxepin analog compounds and methods of modulating sleep by administering such compounds, or a pharmaceutically effective salt thereof.

Abstract: The invention relates to novel doxepin analog compounds and methods of modulating sleep by administering such compounds, or a pharmaceutically effective salt thereof.

Abstract: The invention relates to novel antihistamines and methods of modulating sleep by administering a doxepin analog or a pharmaceutically effective salt thereof.

Abstract: The invention is directed to compositions and methods useful for treating Central Nervous System (CNS) disorders. Furthermore, the invention provides compositions and methods of treating sleep disorders. More specifically, the invention is directed to the compositions and use of derivatized, histamine antagonists for the treatment of sleep disorders.

Abstract: Disclosed are novel compounds having the formula or a physiologically acceptable salt, amide, ester or prodrug thereof. The compounds can be used to modulate (antagonize, agonize) chemokine receptor function. Also disclosed is a method for treating a patient having an inflammatory disease and/or viral infection comprising administering an effective amount of a compound of Formula I. In particular embodiments, the invention is a method for treating a patient infected with HIV.

Abstract: A time indicator comprising a first reservoir (13), a migration medium (11) and activating means for bringing liquid from the first reservoir (13) in contact with the migration medium (11) so that after activation the liquid migrates through the migration medium (11) producing a colour change therein. The activating means comprises a second reservoir (16) connected between the first reservoir (13) and the migration medium (11) whereby after activation the liquid travels relatively rapidly from the first reservoir (13) to the second reservoir (16) and then migrates relatively slowly along the length of the migration medium (11) over time.

Abstract: A method (and structure formed thereby) of forming a metal silicide contact on a non-planar silicon containing region having controlled consumption of the silicon containing region, includes forming a blanket metal layer over the silicon containing region, forming a silicon layer over the metal layer, etching anisotropically and selectively with respect to the metal the silicon layer, reacting the metal with silicon at a first temperature to form a metal silicon alloy, etching unreacted portions of the metal layer, annealing at a second temperature to form an alloy of metal-Si2, and selectively etching the unreacted silicon layer.

Abstract: ACE-2 modulating compounds for the treatment of body weight disorders are disclosed. Methods of using the compounds and pharmaceutical compositions containing the compounds are also claimed.

Abstract: A method (and resultant structure) for forming a metal silicide contact on a silicon-containing region having controlled consumption of said silicon-containing region, includes implanting Ge into the silicon-containing region, forming a blanket metal-silicon mixture layer over the silicon-containing region, reacting the metal-silicon mixture with silicon at a first temperature to form a metal silicon alloy, etching unreacted portions of the metal-silicon mixture layer, forming a blanket silicon layer over the metal silicon alloy layer, annealing at a second temperature to form an alloy of metal-Si2, and selectively etching the unreacted silicon layer.

Abstract: A method (and structure formed thereby) of forming a metal silicide contact on a non-planar silicon containing region having controlled consumption of the silicon containing region, includes forming a blanket metal layer over the silicon containing region, forming a silicon layer over the metal layer, etching anisotropically and selectively with respect to the metal the silicon layer, reacting the metal with silicon at a first temperature to form a metal silicon alloy, etching unreacted portions of the metal layer, annealing at a second temperature to form an alloy of metal-Si2, and selectively etching the unreacted silicon layer.

Abstract: A method (and resultant structure) for forming a metal silicide contact on a silicon-containing region having controlled consumption of said silicon-containing region, includes implanting Ge into the silicon-containing region, forming a blanket metal-silicon mixture layer over the silicon-containing region, reacting the metal-silicon mixture with silicon at a first temperature to form a metal silicon alloy, etching unreacted portions of the metal-silicon mixture layer, forming a blanket silicon layer over the metal silicon alloy layer, annealing at a second temperature to form an alloy of metal-Si2, and selectively etching the unreacted silicon layer.

Abstract: A semiconductor structure includes raised source and drain regions, where the raised source and drain regions are facet free and unconstrained to have a shape conforming to a same crystallographic axes with respect to each other.

Abstract: A method (and resultant structure) for forming a metal silicide contact on a silicon-containing region having controlled consumption of said silicon-containing region, includes implanting Ge into the silicon-containing region, forming a blanket metal-silicon mixture layer over the silicon-containing region, reacting the metal-silicon mixture with silicon at a first temperature to form a metal silicon alloy, etching unreacted portions of the metal-silicon mixture layer, forming a blanket silicon layer over the metal silicon alloy layer, annealing at a second temperature to form an alloy of metal-Si2, and selectively etching the unreacted silicon layer.

Abstract: A method (and structure formed thereby) of forming a metal silicide contact on a non-planar silicon containing region having controlled consumption of the silicon containing region, includes forming a blanket metal layer over the silicon containing region, forming a silicon layer over the metal layer, etching anisotropically and selectively with respect to the metal the silicon layer, reacting the metal with silicon at a first temperature to form a metal silicon alloy, etching unreacted portions of the metal layer, annealing at a second temperature to form an alloy of metal-Si2, and selectively etching the unreacted silicon layer.

Abstract: A method for performing design trade-off. A plurality of critical to quality parameters corresponding to features of the design are obtained. A plurality of design specifications, each design specification corresponding to one of the critical to quality parameters, are also obtained. A plurality of designs are obtained where each design includes a plurality of design values and each design value corresponds to one of the critical to quality parameters. The design values are compared to the design specifications for each of the plurality of designs. A total score is generated for each design in response to the comparison.