Patents by Inventor Michael T. Andreas

Michael T. Andreas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11651952
    Abstract: In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others.
    Type: Grant
    Filed: February 5, 2021
    Date of Patent: May 16, 2023
    Assignee: Micron Technology, Inc.
    Inventors: Michael T. Andreas, Jerome A. Imonigie, Prashant Raghu, Sanjeev Sapra, Ian K. McDaniel
  • Publication number: 20210159069
    Abstract: In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others.
    Type: Application
    Filed: February 5, 2021
    Publication date: May 27, 2021
    Inventors: Michael T. Andreas, Jerome A. Imonigie, Prashant Raghu, Sanjeev Sapra, Ian K. McDaniel
  • Patent number: 10916418
    Abstract: In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others.
    Type: Grant
    Filed: November 7, 2019
    Date of Patent: February 9, 2021
    Assignee: Micron Technology, Inc.
    Inventors: Michael T. Andreas, Jerome A. Imonigie, Prashant Raghu, Sanjeev Sapra, Ian K. McDaniel
  • Publication number: 20200075316
    Abstract: In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others.
    Type: Application
    Filed: November 7, 2019
    Publication date: March 5, 2020
    Inventors: Michael T. Andreas, Jerome A. Imonigie, Prashant Raghu, Sanjeev Sapra, Ian K. McDaniel
  • Patent number: 10497558
    Abstract: In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others.
    Type: Grant
    Filed: February 26, 2018
    Date of Patent: December 3, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Michael T. Andreas, Jerome A. Imonigie, Prashant Raghu, Sanjeev Sapra, Ian K. McDaniel
  • Publication number: 20190267232
    Abstract: In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others.
    Type: Application
    Filed: February 26, 2018
    Publication date: August 29, 2019
    Inventors: Michael T. Andreas, Jerome A. Imonigie, Prashant Raghu, Sanjeev Sapra, Ian K. McDaniel
  • Patent number: 9653307
    Abstract: A surface modification composition comprising a silylation agent comprising a silyl acetamide, a silylation catalyst comprising a perfluoro acid anhydride, an amine-based complexing agent, and an organic solvent. Methods of modifying a silicon-based material and methods of forming high aspect ratio structures on a substrate are also disclosed.
    Type: Grant
    Filed: July 14, 2016
    Date of Patent: May 16, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Jerome A. Imonigie, Ian C. Laboriante, Michael T. Andreas, Sanjeev Sapra, Prashant Raghu
  • Patent number: 8025809
    Abstract: A chemical-mechanical polishing (CMP) method includes applying a solid abrasive material to a substrate, polishing the substrate, flocculating at least a portion of the abrasive material, and removing at least a majority portion of the flocculated portion from the substrate. Applying solid abrasive material can include applying a CMP slurry or a polishing pad comprising abrasive material. Such a method can further include applying a surfactant comprising material to the substrate to assist in effectuating flocculation of the abrasive material to the surfactant comprising material may be cationic which includes, for example, a quaternary ammonium substituted salt. Also, for example, the surfactant comprising material may be applied during polishing, brush scrubbing, pressure spraying or buffing.
    Type: Grant
    Filed: July 21, 2008
    Date of Patent: September 27, 2011
    Assignee: Micron Technology, Inc.
    Inventor: Michael T. Andreas
  • Patent number: 7964109
    Abstract: The invention includes methods of cleaning a surface of a cobalt-containing material, methods of forming an opening to a cobalt-containing material, semiconductor processing methods of forming an integrated circuit comprising a copper-containing conductive line, and cobalt-containing film cleaning solutions. In one implementation, a method of cleaning a surface of a cobalt-containing material includes forming a cobalt-containing material over a substrate. The surface of the cobalt-containing material is exposed to an aqueous mixture. The aqueous mixture has an acidic pH and comprises acetic acid, a multiprotic acid, and HF. Other aspects and implementations are contemplated.
    Type: Grant
    Filed: March 24, 2008
    Date of Patent: June 21, 2011
    Assignee: Micron Technology, Inc.
    Inventor: Michael T. Andreas
  • Publication number: 20090023291
    Abstract: A chemical-mechanical polishing (CMP) method includes applying a solid abrasive material to a substrate, polishing the substrate, flocculating at least a portion of the abrasive material, and removing at least a majority portion of the flocculated portion from the substrate. Applying solid abrasive material can include applying a CMP slurry or a polishing pad comprising abrasive material. Such a method can further include applying a surfactant comprising material to the substrate to assist in effectuating flocculation of the abrasive material to the surfactant comprising material may be cationic which includes, for example, a quaternary ammonium substituted salt. Also, for example, the surfactant comprising material may be applied during polishing, brush scrubbing, pressure spraying or buffing.
    Type: Application
    Filed: July 21, 2008
    Publication date: January 22, 2009
    Applicant: MICRON TECHNOLOGY, INC.
    Inventor: Michael T. Andreas
  • Patent number: 7468105
    Abstract: An antimicrobial cleaning composition and methods for cleaning semiconductor substrates, particularly after chemical mechanical planarization or polishing, are provided. In one embodiment, the cleaning composition combines a solvent, a cleaning agent such as a hydroxycarboxylic acid or salt thereof, and at least one antimicrobial agent resulting in a cleaning composition in which microbial growth is inhibited. Examples of suitable antimicrobial agents include a benzoic acid or salt such as potassium or ammonium benzoate, and sorbic acid or salt such as potassium sorbate. The composition is useful for cleaning a wafer and particularly for removing residual particles after a conductive layer has been planarized to a dielectric layer under the conductive layer in a chemical mechanical planarization of a semiconductor wafer with abrasive slurry particles, particularly after a CMP of copper or aluminum films.
    Type: Grant
    Filed: October 16, 2001
    Date of Patent: December 23, 2008
    Assignee: Micron Technology, Inc.
    Inventor: Michael T. Andreas
  • Publication number: 20080176405
    Abstract: The invention includes methods of cleaning a surface of a cobalt-containing material, methods of forming an opening to a cobalt-containing material, semiconductor processing methods of forming an integrated circuit comprising a copper-containing conductive line, and cobalt-containing film cleaning solutions. In one implementation, a method of cleaning a surface of a cobalt-containing material includes forming a cobalt-containing material over a substrate. The surface of the cobalt-containing material is exposed to an aqueous mixture. The aqueous mixture has an acidic pH and comprises acetic acid, a multiprotic acid, and HF. Other aspects and implementations are contemplated.
    Type: Application
    Filed: March 24, 2008
    Publication date: July 24, 2008
    Inventor: Michael T. Andreas
  • Patent number: 7402259
    Abstract: A chemical-mechanical polishing (CMP) method includes applying a solid abrasive material to a substrate, polishing the substrate, flocculating at least a portion of the abrasive material, and removing at least a majority portion of the flocculated portion from the substrate. Applying solid abrasive material can include applying a CMP slurry or a polishing pad comprising abrasive material. Such a method can further include applying a surfactant comprising material to the substrate to assist in effectuating flocculation of the abrasive material. Such surfactant comprising material may be cationic which includes, for example, a quaternary ammonium substituted salt. Also, for example, the surfactant comprising material may be applied during polishing, brush scrubbing, pressure spraying, or buffing.
    Type: Grant
    Filed: September 2, 2004
    Date of Patent: July 22, 2008
    Assignee: Micron Technology, Inc.
    Inventor: Michael T. Andreas
  • Patent number: 7367343
    Abstract: The invention includes methods of cleaning a surface of a cobalt-containing material, methods of forming an opening to a cobalt-containing material, semiconductor processing methods of forming an integrated circuit comprising a copper-containing conductive line, and cobalt-containing film cleaning solutions. In one implementation, a method of cleaning a surface of a cobalt-containing material includes forming a cobalt-containing material over a substrate. The surface of the cobalt-containing material is exposed to an aqueous mixture. The aqueous mixture has an acidic pH and comprises acetic acid, a multiprotic acid, and HF. Other aspects and implementations are contemplated.
    Type: Grant
    Filed: January 23, 2006
    Date of Patent: May 6, 2008
    Assignee: Micron Technology, Inc.
    Inventor: Michael T. Andreas
  • Patent number: 7235494
    Abstract: An antimicrobial cleaning composition and methods for cleaning semiconductor substrates, particularly after chemical mechanical planarization or polishing, are provided. In one embodiment, the cleaning composition combines a solvent, a cleaning agent such as a hydroxycarboxylic acid or salt thereof, and at least one antimicrobial agent resulting in a cleaning composition in which microbial growth is inhibited. Examples of suitable antimicrobial agents include a benzoic acid or salt such as potassium or ammonium benzoate, and sorbic acid or salt such as potassium sorbate. The composition is useful for cleaning a wafer and particularly for removing residual particles after a conductive layer has been planarized to a dielectric layer under the conductive layer in a chemical mechanical planarization of a semiconductor wafer with abrasive slurry particles, particularly after a CMP of copper or aluminum films.
    Type: Grant
    Filed: January 27, 2005
    Date of Patent: June 26, 2007
    Assignee: Micron Technology, Inc.
    Inventor: Michael T. Andreas
  • Patent number: 7151026
    Abstract: Semiconductor processing methods are described which can be used to reduce the chances of an inadvertent contamination during processing. In one implementation, a semiconductor wafer backside is mechanically scrubbed to remove an undesired material prior to forming a final passivation layer over an oppositely facing semiconductor wafer frontside. In another implementation, the wafer backside is treated to remove the undesired material while treatment of the wafer frontside is restricted. In another implementation, the mechanical scrubbing of the wafer backside is conducted in connection with a polishing solution which is effective to facilitate removal of undesired material from the wafer backside. In a preferred implementation, dynamic random access memory storage capacitors are formed and the undesired material constitutes remnant polysilicon which adheres to the wafer backside during formation of a frontside capacitor storage node.
    Type: Grant
    Filed: December 1, 2005
    Date of Patent: December 19, 2006
    Assignee: Micron Technology, Inc.
    Inventor: Michael T. Andreas
  • Patent number: 7066790
    Abstract: A chemical-mechanical polishing (CMP) method includes applying a solid abrasive material to a substrate, polishing the substrate, flocculating at least a portion of the abrasive material, and removing at least a majority portion of the flocculated portion from the substrate. Applying solid abrasive material can include applying a CMP slurry or a polishing pad comprising abrasive material. Such a method can further include applying a surfactant comprising material to the substrate to assist in effectuating flocculation of the abrasive material. Such surfactant comprising material may be cationic which includes, for example, a quaternary ammonium substituted salt. Also, for example, the surfactant comprising material may be applied during polishing, brush scrubbing, pressure spraying, or buffing.
    Type: Grant
    Filed: March 26, 2002
    Date of Patent: June 27, 2006
    Assignee: Micron Technology, Inc.
    Inventor: Michael T. Andreas
  • Patent number: 7033978
    Abstract: Cleaning solutions for removing residuals from the surface of an integrated circuit device. Such cleaning solutions find particular application in the fabrication of a dual damascene structure following removal of excess portions of a silver-containing metal layer from a device surface. The cleaning solutions facilitate removal of particulate residuals as well as unremoved portions of the metal layer in a single cleaning process. The cleaning solutions are dilute aqueous solutions containing hydrogen peroxide and at least one acidic component and are substantially free of particulate material. Acidic components include carboxylic acids and their salts.
    Type: Grant
    Filed: January 31, 2003
    Date of Patent: April 25, 2006
    Assignee: Micron Technology, Inc.
    Inventor: Michael T. Andreas
  • Patent number: 7023099
    Abstract: A method of removing organic particles from a registration mark on a semiconductor wafer. The method comprises providing a semiconductor wafer comprising at least one registration mark at least partially filled with organic particles. The at least one registration mark has a trench width from approximately 1.0 ?m to approximately 3.0 ?m. The semiconductor wafer is exposed to a cleaning solution comprising tetramethylammonium hydroxide and at least one surfactant, such as an acetylenic diol surfactant. The semiconductor wafer is exposed to an ultrasonic or megasonic vibrational energy. A semiconductor wafer previously subjected to a chemical mechanical planarization treatment and having a reduced amount of organic particles in a registration mark is also disclosed.
    Type: Grant
    Filed: August 25, 2004
    Date of Patent: April 4, 2006
    Assignee: Micron Technology, INC
    Inventors: Michael T. Andreas, Paul A. Morgan
  • Patent number: 7014537
    Abstract: A post-CMP cleaning process includes brush cleaning a CMPed surface, followed by at least partially drying the CMPed surface, followed by spray cleaning the CMPed surface. A method of cleaning residue from registration alignment markings formed on a semiconductor substrate includes polishing a material within which the registration alignment markings are received with a polishing solution comprising a liquid and a solid, followed by brush cleaning a remaining outermost polished surface, followed by at least partially drying the polished surface, followed by spray cleaning the outermost polished surface. Other aspects and implementations are contemplated.
    Type: Grant
    Filed: October 13, 2004
    Date of Patent: March 21, 2006
    Assignee: Micron Technology, Inc.
    Inventor: Michael T. Andreas