Abstract: A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.

Abstract: A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.

Abstract: A micro-electromechanical device includes a first piezoelectric actuator and a second piezoelectric actuator. The first piezoelectric actuator includes a first beam fixed on a substrate and a second beam extended in parallel to the first beam from a first connecting end to a first working end. A second piezoelectric actuator includes a third beam, spaced from the first beam, fixed on the substrate and a fourth beam extended in parallel to the third beam from a second connecting end to a second working end. The second working end faces the first working end in a perpendicular direction to a surface of the substrate.

Abstract: A Micro-Electro-Mechanical System (MEMS) switch includes: a substrate; a fixed electrode provided on the substrate; and a beam fixed to the substrate and including a movable electrode disposed to face the fixed electrode. The beam is capable of being bent and displaced in a direction of the substrate to allow the movable electrode to directly contact with the fixed electrode. At least one of the fixed electrode and the movable electrode contains Au, and the other contains at least one metal selected from a group consisting of Ir, Rh, Os, Ru, Re and Te as a main component.

Abstract: It is made possible to provide a piezoelectric driven MEMS device having the distance between the action end and the fixed electrode which is kept constant regardless of whether the residual strain is large or small and having a mechanism which is excellent in reproducibility and reliability. Two piezoelectric driven actuators each having a folded beam structure are disposed in parallel and in a line-symmetric manner, and connected to each other in the vicinity of an action end.

Abstract: A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.

Abstract: A MEMS switch according to one aspect of the present invention comprises: a substrate; a fixing portion formed on the substrate; a movable beam including a lower electrode, a first insulation layer formed on the lower electrode, and an upper electrode formed on the first insulation layer, the movable beam having one end fixed by the fixing portion, the lower electrode and the first insulation layer having an opening going through both of the lower electrode and the first insulation layer; a fixed electrode formed on the substrate facing to a bottom surface of the other end of the movable beam, the fixed electrode facing to the opening; a contact electrode formed in the opening so as to project below the bottom surface of the movable beam and to be electrically connected to the upper electrode as well as to be insulated from the lower electrode; and a second insulation layer formed on the fixed electrode and having an opening facing to the contact electrode so as to insulate the lower electrode from the fixed

Abstract: A thin film piezoelectric actuator comprises a driving part at least one end of which is supported by an anchor portion. The driving part includes: a piezoelectric film, a first lower electrode provided under a first region of the piezoelectric film, a second lower electrode provided under a second region different from the first region of the piezoelectric film, a first upper electrode provided opposite to the first lower electrode on the piezoelectric film, a second upper electrode provided opposite to the second lower electrode on the piezoelectric film, a first connection part that electrically connects the first lower electrode and the second upper electrode via a first via hole formed in the piezoelectric film, and a second connection part that electrically connects the second lower electrode and the first upper electrode via a second via hole formed in the piezoelectric film.

Abstract: A thin-film piezoelectric resonator has a piezoelectric film which is formed via a space on a substrate and is supported on the substrate at least one location, an upper electrode which has a plurality of electrode layers and a connection part connecting the electrode layers to each other, each of the electrode layers being formed on the piezoelectric film, having the same width and being arranged at the same interval as the width, a lower electrode formed under the piezoelectric film, a first pad which is formed on the substrate and is electrically connected to the upper electrode, and a second pad which is formed on the substrate and is electrically connected to the lower electrode.

Abstract: A MEMS device includes: a first actuator having a first fixed end, including a stacked structure of a first lower electrode, a first piezoelectric film, and a first upper electrode, and being able to be operated by applying voltages to the first lower electrode and the first upper electrode; a second actuator having a second fixed end, being disposed in parallel with the first actuator, including a stacked structure of a second lower electrode, a second piezoelectric film, and a second upper electrode, and being able to be operated by applying voltages to the second lower electrode and the second upper electrode; and an electric circuit element having a first action part connected to the first actuator and a second action part connected to the second actuator.

Abstract: An antenna sharing device has a common signal terminal pair, a first terminal pair, a second terminal pair, a first filter, a second filter, a first inductor element, second inductor elements, third inductor elements. The second and third inductor elements have a plurality of inductor elements, respectively. An inductor element closest to the first terminal pair among the inductor elements included in the second inductor elements and an inductor element closest to the second terminal pair among the third inductor elements are arranged further away from the first inductor element than the other inductor elements included in the second and third inductor elements, or formed on a substrate different from a substrate on which the first inductor element is formed, or formed opposite to the first inductor element by sandwiching a shielding pattern.

Abstract: A variable inductor element has a substrate, a first inductor element which is fixedly arranged on the substrate, a second inductor element which is supported by the substrate, is magnetically coupled with the first inductor element and variably control a mutual conductance with the first inductor element, and at least one piezoelectric actuator pair which torsionally drives the second inductor element.

Abstract: In a vertical cavity surface emitting laser diode manufactured on a non-off-angle substrate with a (100)-oriented plane or the like, anisotropic stress is applied to a central portion of an active layer by forming a asymmetrical oxidation structure in an Al high concentration portion in the mesa, so that polarization controllability of a device can be improved.

Abstract: A piezoelectric actuator includes a first beam including a first bottom electrode, a first piezoelectric film on the first bottom electrode, and a first top electrode on the first piezoelectric film, a fixed end assigned at an end of the first beam and fixed on a substrate, a connecting end assigned at another end of the first beam and suspended over a free space; and a second beam including a second piezoelectric film connected to the first piezoelectric film at the connecting end, a second bottom electrode under the second piezoelectric film, and a second top electrode on the second piezoelectric film, a working end assigned at an end of the second beam opposite to another end to which the connecting end is assigned and suspended over the free space; wherein a distance between centers of the fixed end and the working end is shorter than a distance from the working end to the connecting end.

Abstract: It makes possible to inject a current into the current confinement region substantially uniformly. A surface emitting type optical semiconductor device includes a semiconductor active layer provided above a substrate; a first and second reflecting mirror layers sandwiching the semiconductor active layer to form an optical cavity in a direction perpendicular to the substrate; a plurality of current confinement regions provided in the second reflecting mirror layer so as to be separated by an impurity region having impurities; a semiconductor current diffusion layer provided on the second reflecting mirror layer so as to cover the current confinement regions; and an electrode portion which injects a current into the semiconductor active layer. The electrode portion comprising a first electrode provided on the semiconductor current diffusion layer so as to surround the current confinement regions and a second electrode provided on an opposite side of the substrate from the semiconductor active layer.

Abstract: A micro-mechanical device includes a first piezoelectric actuator including a piezoelectric film, and lower and upper electrodes interleaving the piezoelectric film, and extending from a first fixing part on a substrate to a first operating end, and a second piezoelectric actuator connected to the first piezoelectric actuator via a connecting part at the first operating end of the first piezoelectric actuator, and extending from the connecting part to a second operating end, the second piezoelectric actuator being shorter than the first piezoelectric actuator.

Abstract: It is made possible to obtain high performance having high controllability in polarization mode even when a vertical cavity surface emitting laser diode is fabricated on an ordinary substrate with a plane orientation (100) plane or the like. A vertical cavity surface emitting laser diode includes: a substrate; a semiconductor active layer which is formed on the substrate and has a light emitting region; a first reflecting mirror and a second reflecting mirror sandwiching the semiconductor active layer; a first recess which has a first groove depth penetrating at least the semiconductor active layer from the outermost layer of the first reflecting mirror; a second recess having a second groove depth shallower than the first groove depth; a mesa portion which is surrounded by the first and second recesses; and an insulating film which is buried in the first recess.

Abstract: A vertical-cavity surface emitting laser diode comprises: a first and a second reflectors; an active layer provided between the first and the second reflectors; and an oxidizee layer having a non-oxidized part and an oxidized part provided around the non-oxidized part. An electric current is injected into the non-oxidized part. The oxidizee layer has a proton-containing part including proton at least at a position substantially enclosing the non-oxidized part.

Abstract: A phase demodulator has a high frequency amplifier which amplifies a received signal modulated by phase, a voltage control oscillator which conducts oscillation operation in tune with the received signal amplified by the high frequency amplifier, a phase comparator which detects a phase difference between an output signal of the voltage control oscillator and a reference oscillation signal, and a demodulator which conducts demodulation process based on the phase difference.

Abstract: A digital demodulator includes a resonator having a resonance frequency same as a carrier frequency to store a charge corresponding to a digital signal modulated by phase shift keying, a capacitor to store the charge of the resonator, an amplifier including an input node and an output node between which the capacitor is connected to convert a stored charge of the capacitor into a voltage signal, and a controller configured to accumulate in the resonator the charge induced by the frequency signal modulated by phase shift keying in a first control mode and configured to transfer the charge of the resonator to the capacitor in a second control mode, to output the voltage signal corresponding to the stored charge of the capacitor from the output node of the amplifier.