Abstract: The present invention provides a deposition mask including: a mask layer having an aperture pattern that is formed in conformity with a transparent electrode to be formed on a display surface of a display panel, with the same shape and size as the transparent electrode; and a support layer having plural support lines formed on one surface of the mask layer across the aperture pattern. In the mask, an arrangement pitch for the support lines of the support layer is set so as to reduce moire fringes or diffraction fringes that appear due to shadows of the support lines, which are transferred onto the transparent electrode as unevenness in deposition thickness.

Abstract: The present invention provides a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, which are laminated on a substrate. The semiconductor layer is a polysilicon thin film. The polysilicon thin film in regions corresponding to the source electrode and the drain electrode has a smaller crystal grain size than that of the polysilicon thin film in a channel region between the source electrode and the drain electrode.

Abstract: In a manufacturing step of an oxide semiconductor device having an active layer of an oxide semiconductor, the step is simplified, thereby improving the productivity. A method for manufacturing an oxide semiconductor device having an active layer of an oxide semiconductor layer of indium (In), gallium (Ga), and zinc (Zn) includes a laser annealing treatment including irradiating an active layer formed region with a laser beam and imparting an etching resistance to the active layer.

Abstract: A laser irradiation device includes a light source that generates a laser beam, a projection lens that irradiates a predetermined region of an amorphous silicon thin film, mounted on each of a plurality of thin-film transistors on a glass substrate moving in a predetermined direction, with the laser beam, and a projection mask pattern provided on the projection lens and has a plurality of columns each including a predetermined number of opening portions and provided parallel to the predetermined direction, in which the projection lens emits the laser beam through the projection mask pattern, and the projection mask pattern is configured such that at least some of the predetermined number of opening portions are not on a straight line parallel to the predetermined direction in each of the plurality of columns.

Abstract: In an oxide semiconductor device including an active layer region constituted by an oxide semiconductor, stability when a stress is applied is improved. The oxide semiconductor device includes an active layer region constituted by an oxide semiconductor of indium (In), gallium (Ga), and zinc (Zn), wherein the active layer region contains an element selected from titanium (Ti), zirconium (Zr), and hafnium (Hf) that are Group 4 elements, or carbon (C), silicon (Si), germanium (Ge), and tin (Sn) that are Group 14 elements at a number density in a range of 1×1016 to 1×1020 cm?3.

Abstract: A laser irradiation apparatus includes a light source configured to generate a laser beam, a projection lens configured to irradiate a predetermined region of an amorphous silicon thin film deposited on each of a plurality of thin film transistors on a glass substrate with the laser beam, and a projection mask pattern provided on the projection lens and including a plurality of masks to which transmittances that are proportions of laser beams passing therethrough are set, wherein the projection lens irradiates the plurality of thin film transistors on the glass substrate moving in a predetermined direction with the laser beam via the plurality of masks included in the projection mask pattern, and each of the plurality of masks included in the projection mask pattern is set to any one of the plurality of transmittances.

Abstract: A laser irradiation apparatus includes a light source that generates a laser beam, a projection lens that radiates the laser beam onto a predetermined region of an amorphous silicon thin film deposited on each of a plurality of thin film transistors on a glass substrate, and a projection mask pattern provided on the projection lens and has a plurality of openings so that the laser beam is radiated onto each of the plurality of thin film transistors, wherein the projection lens radiates the laser beam onto the plurality of thin film transistors on the glass substrate, which moves in a predetermined direction, through the projection mask pattern, and the projection mask pattern is provided such that the openings are not continuous in one column orthogonal to the moving direction.

Abstract: A white light-emitting device is capable of correcting deviations in chromaticity and includes a plurality of pixels, each of the plurality of pixels includes at least two sub-pixels, and each of the sub-pixels is a white light-emitting element. At least one sub-pixel out of the at least two sub-pixels includes a color filter. The optical characteristic of the color filter is set to correct the deviation of chromaticity of light emitted by the white light-emitting element. The white light-emitting device further controls an emission intensity of each of the white light-emitting elements.

Abstract: The present invention provides a laser annealing method for irradiating laser light L to an amorphous silicon thin film deposited on a substrate to obtain polysilicon, the method including: multiply irradiating the laser light L while changing an irradiation area of the laser light L on the amorphous silicon thin film to achieve such a grain size distribution that a crystal grain size of the polysilicon decreases from a central portion to a side edge portion at least along a center line C of the irradiation area of the laser light L. The above laser annealing method can reduce a leak current through a simple process.

Abstract: The present invention provides a laser annealing method for irradiating laser light L to an amorphous silicon thin film deposited on a substrate to obtain polysilicon, the method including: multiply irradiating the laser light L while changing an irradiation area of the laser light L on the amorphous silicon thin film to achieve such a grain size distribution that a crystal grain size of the polysilicon decreases from a central portion to a side edge portion at least along a center line C of the irradiation area of the laser light L. The above laser annealing method can reduce a leak current through a simple process.

Abstract: The present invention provides a method for manufacturing a deposition mask, which irradiates laser light L to a resin film 20 to form an opening pattern 4 having a polygonal shape in a plan view, the method including a step of irradiating the laser light L that is shaped using a beam-shaping mask 10 having a light transmissive window 18 that allows the laser light L to pass therethrough with light transmittance gradually reducing with distance from an edge of the light transmissive window 18 on at least one of opposing sides thereof within an area outside the light transmissive window 18 to thereby form the opening pattern 4 having at least one pair of opposing side walls 4a that are inclined to open wide toward a surface of the film 20 to be irradiated with the laser light L, from a surface opposite to the irradiated surface.

Abstract: The present invention provides a laser annealing method for irradiating laser light L to an amorphous silicon thin film deposited on a substrate to obtain polysilicon, the method including: multiply irradiating the laser light L while changing an irradiation area of the laser light L on the amorphous silicon thin film to achieve such a grain size distribution that a crystal grain size of the polysilicon decreases from a central portion to a side edge portion at least along a center line C of the irradiation area of the laser light L. The above laser annealing method can reduce a leak current through a simple process.

Abstract: A deposition mask is provided. The deposition mask including: a resin film 1 in which penetrating opening patterns 4 are formed and a frame-shaped metal thin film 5 having an opening is provided on one face 1a of the film 1; a metal mask 2 provided at a position corresponding to the opening of the metal thin film 5 on one face 1a side of the film 1, the metal mask 2 being separated from and independent of the film 1, the metal mask 2 being provided with through holes 6; and a metal frame 3 positioned on one face 1a side of the film 1, the metal frame 3 supporting the film 1 and the metal mask 2 by spot-welding a portion of the metal thin film 5 and an edge region of the metal mask 2 to one end face 3a.

Abstract: A laser beam irradiation device includes a light source that emits a laser beam; and a projection lens that irradiates a plurality of different areas of an amorphous silicon thin film attached to a thin-film transistor with the laser beam, wherein the projection lens irradiates the plurality of different areas of the amorphous silicon thin film with the laser beam such that a source electrode and a drain electrode of the thin-film transistor are connected in parallel to each other by a plurality of channel regions.

Abstract: The present invention provides a method for manufacturing a deposition mask, which irradiates laser light L to a resin film 20 to form an opening pattern 4 having a polygonal shape in a plan view, the method including a step of irradiating the laser light L that is shaped using a beam-shaping mask 10 having a light transmissive window 18 that allows the laser light L to pass therethrough with light transmittance gradually reducing with distance from an edge of the light transmissive window 18 on at least one of opposing sides thereof within an area outside the light transmissive window 18 to thereby form the opening pattern 4 having at least one pair of opposing side walls 4a that are inclined to open wide toward a surface of the film 20 to be irradiated with the laser light L, from a surface opposite to the irradiated surface.

Abstract: The present invention provides a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, which are laminated on a substrate. The semiconductor layer is a polysilicon thin film. The polysilicon thin film in regions corresponding to the source electrode and the drain electrode has a smaller crystal grain size than that of the polysilicon thin film in a channel region between the source electrode and the drain electrode.

Abstract: A method of manufacturing an organic EL element includes forming a first electrode corresponding to a color of a constituent pixel on a substrate; forming a hole injection layer; forming a hole transport layer; forming a host material layer to cause a dopant material to diffuse on the side of the substrate on which the hole transport layer is formed; bringing the host material layer into contact with a dopant material side of a donor substrate in which the dopant material is formed on a metal layer; applying a current in a stacking direction between the first electrode corresponding to the pixel of the color corresponding to the dopant material and the metal layer; separating the donor substrate from the substrate; and forming a second electrode on the side on which the host material layer in which the dopant material has diffused is formed.

Abstract: The present invention provides a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, which are laminated on a substrate. The semiconductor layer is a polysilicon thin film. The polysilicon thin film in regions corresponding to the source electrode and the drain electrode has a smaller crystal grain size than that of the polysilicon thin film in a channel region between the source electrode and the drain electrode.

Abstract: A production method for a deposition mask is provided. The production method includes the steps of: forming a mask member having a structure in which a thin-board magnetic metal member having a through hole and a resin film contact tightly with each other; forming a mark that has a specified depth by irradiating a part of the film through the through hole of the mask member with laser beams; and forming an opening pattern that penetrates the film by irradiating a predetermined position with laser beams, using the mark as a reference.

Abstract: The present invention provides a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, which are laminated on a substrate. The semiconductor layer is a polysilicon thin film. The polysilicon thin film in regions corresponding to the source electrode and the drain electrode has a smaller crystal grain size than that of the polysilicon thin film in a channel region between the source electrode and the drain electrode.