Abstract: The present invention relates to a method for producing a deposition mask having a structure in which a metal mask sheet with a plurality of opening patterns formed is disposed under tension on and fixed to a metal frame, the method including: a first step of bonding a peripheral part of the metal mask sheet to a synthetic fiber mesh to which constant tension is applied; a second step of cutting off a part of the mesh corresponding to a deposition effective region with a size capable of arranging therein the plurality of opening patterns of the metal mask sheet; a third step of connecting and fixing the frame to the peripheral part of the metal mask sheet on an opposite side to the mesh; and a fourth step of removing the mesh from the metal mask sheet.

Abstract: The present invention provides a method for manufacturing a thin film transistor including processing of irradiating an amorphous silicon film 8 deposited on a substrate with laser light. The method comprises: a laser annealing step for forming a polysilicon film 9 including a channel region 52 by irradiating an area including a formation region of the region 52 in the film 8 with the laser light such that the area including the formation region is heated, melted, and recrystallized; and a removing step for etching off an area outside the region 52 from the polysilicon film 9. Thus, the present invention can provide a method for manufacturing a thin film transistor and a mask for use in the manufacturing method that are capable of promoting the recrystallization of the film 8 and thereby improving its electron mobility even when laser irradiation has to be performed under restricted irradiation conditions.

Abstract: The present invention provides a mask having a plurality of elongate openings formed in a substrate, including: a plurality of reinforcement portions having a thickness smaller than a thickness of the substrate and bridging the openings across a longitudinal direction thereof on one side of the substrate; and a recess portion having a step formed by excavating an area around the openings on each side of the reinforcement portions along the longitudinal direction. The mask accordingly achieves and retains high mechanical strength without increasing the mask thickness.

Abstract: A laser annealing method is for irradiating an amorphous silicon film formed on a substrate 6 with laser beams and crystalizing the amorphous silicon film, wherein a plurality of first and second TFT formation portions 23, 24 on the substrate 6 are irradiated with laser beams at differing irradiation doses so as to crystalize the amorphous silicon film in the first TFT formation portions 23 into a polysilicon film having a crystalline state and crystalize the amorphous silicon film in the second TFT formation portions 24 into a polysilicon film having another crystalline state that is different from that of the polysilicon film in the first TFT formation portions 23.

Abstract: A deposition mask is provided. The deposition mask including: a resin film 1 in which penetrating opening patterns 4 are formed and a frame-shaped metal thin film 5 having an opening is provided on one face 1a of the film 1; a metal mask 2 provided at a position corresponding to the opening of the metal thin film 5 on one face 1a side of the film 1, the metal mask 2 being separated from and independent of the film 1, the metal mask 2 being provided with through holes 6; and a metal frame 3 positioned on one face 1a side of the film 1, the metal frame 3 supporting the film 1 and the metal mask 2 by spot-welding a portion of the metal thin film 5 and an edge region of the metal mask 2 to one end face 3a.

Abstract: A deposition mask is provided. The deposition mask including: a resin film 1 in which penetrating opening patterns 4 are formed and a frame-shaped metal thin film 5 having an opening is provided on one face 1a of the film 1; a metal mask 2 provided at a position corresponding to the opening of the metal thin film 5 on one face 1a side of the film 1, the metal mask 2 being separated from and independent of the film 1, the metal mask 2 being provided with through holes 6; and a metal frame 3 positioned on one face 1a side of the film 1, the metal frame 3 supporting the film 1 and the metal mask 2 by spot-welding a portion of the metal thin film 5 and an edge region of the metal mask 2 to one end face 3a.

Abstract: A method of manufacturing an organic EL element includes forming a first electrode corresponding to a color of a constituent pixel on a substrate; forming a hole injection layer; forming a hole transport layer; forming a host material layer to cause a dopant material to diffuse on the side of the substrate on which the hole transport layer is formed; bringing the host material layer into contact with a dopant material side of a donor substrate in which the dopant material is formed on a metal layer; applying a current in a stacking direction between the first electrode corresponding to the pixel of the color corresponding to the dopant material and the metal layer; separating the donor substrate from the substrate; and forming a second electrode on the side on which the host material layer in which the dopant material has diffused is formed.

Abstract: The present invention provides a deposition mask for forming a thin-pattern by depositing a deposition material on a substrate, the deposition mask includes: a thin plate-shaped magnetic metal member 1 in which a through-hole 4 having shape and dimensions greater than those of the thin-film pattern is provided at a position corresponding to the thin-film pattern; and a resin film 2 which is provided in close contact with one surface of the magnetic metal member 1 and in which an opening pattern 5 having shape and dimensions identical to those of the thin-film pattern is formed at a position corresponding to the thin-film pattern in the through-hole 4, the resin film 2 being permeable to visible light. The opening pattern 5 is provided within an opening pattern formation region 7 surrounded by a deposition shadow region 6 defined by the thickness of the magnetic metal member 1 and the maximum angle of incidence of the deposition material to the film surface in the through-hole 4.

Abstract: A thin film transistor substrate includes a plurality of thin film transistors arranged in columns and rows respectively on a substrate. Each of the thin film transistors includes a laser annealed part in which an amorphous silicon layer that forms a channel region is laser annealed to be a polysilicon layer, each laser annealed part is disposed with a designed pitch in a scanning direction in which a laser light for laser annealing and the substrate move relatively to each other, and the laser annealed part is provided within a channel width formed in a direction orthogonal to the scanning direction and being narrower than the channel width.

Abstract: A white light-emitting device is capable of correcting deviations in chromaticity and includes a plurality of pixels, each of the plurality of pixels includes at least two sub-pixels, and each of the sub-pixels is a white light-emitting element. At least one sub-pixel out of the at least two sub-pixels includes a color filter. The optical characteristic of the color filter is set to correct the deviation of chromaticity of light emitted by the white light-emitting element. The white light-emitting device further controls an emission intensity of each of the white light-emitting elements.

Abstract: The present invention relates to an exposure device which forms an image of a pattern on a mask onto a substrate with microlens arrays to expose the substrate, and reduces a size of an lighting unit which emits an exposure light. Microlens arrays include plural microlenses which are arranged two-dimensionally and arranged in a direction intersecting a movement direction. Lighting unit includes an LD array bar in which plural laser diodes are arranged, and lighting optical system which transforms plural emitted lights emitted from the plural laser diodes into an exposure flux having a slit form. The slit form spreads across plural pieces of the microlenses, and which, with respect to the movement direction, is limited in an area not reaching a microlens arranged in an adjacent row in the movement direction, and illuminates plural microlenses arranged in a row with an exposure light by the exposure light flux.

Abstract: A thin film transistor substrate includes a plurality of thin film transistors arranged in columns and rows respectively on a substrate. Each of the thin film transistors includes a laser annealed part in which an amorphous silicon layer that forms a channel region is laser annealed to be a polysilicon layer, each laser annealed part is disposed with a designed pitch in a scanning direction in which a laser light for laser annealing and the substrate move relatively to each other, and the laser annealed part is provided within a channel width formed in a direction orthogonal to the scanning direction and being narrower than the channel width.

Abstract: The present invention provides a laser annealing method for irradiating laser light L to an amorphous silicon thin film deposited on a substrate to obtain polysilicon, the method including: multiply irradiating the laser light L while changing an irradiation area of the laser light L on the amorphous silicon thin film to achieve such a grain size distribution that a crystal grain size of the polysilicon decreases from a central portion to a side edge portion at least along a center line C of the irradiation area of the laser light L. The above laser annealing method can reduce a leak current through a simple process.

Abstract: A projection exposure device projects exposure light onto a substrate via a microlens array. The projection exposure device includes a scanning exposure unit that moves the microlens array along a scanning direction from one end toward another end of the substrate, and a microlens array shift unit that moves the microlens array in a shift direction intersecting with the scanning direction during movement of the microlens array caused by the scanning exposure unit.

Abstract: To provide a production method including: a first step of forming a mask member in which a resin film and a magnetic metal member, which has first through-holes and second through-holes, are brought into close contact; a second step in which a peripheral edge of the magnetic metal member is bonded to one end face of a frame; and a third step in which a portion of the film in each first through-hole is irradiated with laser light to form an opening pattern, and a portion of the film in each second through-hole is irradiated with laser light to form a mask-side alignment mark.

Abstract: A method including: a first step of forming a mask member having a structure in which a magnetic metal member provided with through-holes is in tight contact with one surface of a film; a second step of forming a plurality of preliminary opening patterns by subjecting the film to penetration processing by irradiating laser beams at predetermined regular positions in the plurality of through-holes; and a third step of performing laser processing so as to form each opening pattern over the corresponding preliminary opening pattern, is provided.

Abstract: A nondestructive inspection apparatus of a structure includes: an inspection apparatus body 1 provided with an infrared light irradiation unit irradiating a structure 3 to be inspected with heating infrared light, a temperature variation measuring unit measuring a variation in temperature of the structure due to the irradiation with infrared light from the infrared light irradiation unit, a drive-control-and-accumulation unit performing drive control of the infrared light irradiation unit and the temperature variation measuring unit and performing data accumulation; and a self-running mechanism unit 2 enabling the inspection apparatus body 1 to move along the structure 3. The structure 3 is inspected for an internal defect by irradiating the structure 3 with heating infrared light while the apparatus moves along the structure 3 through the use of the self-running mechanism unit 2 and measuring the variation in temperature of the structure 3 due to the irradiation with infrared light.

Abstract: The present invention provides a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, which are laminated on a substrate. The semiconductor layer is a polysilicon thin film. The polysilicon thin film in regions corresponding to the source electrode and the drain electrode has a smaller crystal grain size than that of the polysilicon thin film in a channel region between the source electrode and the drain electrode.

Abstract: In the present invention, At least one row of lens arrays, in which a plurality of lenses are arranged in a direction intersecting with the conveying direction of a substrate to correspond to the plurality of TFT forming areas set in a matrix on the substrate, is shifted in the direction intersecting with the conveying direction of the substrate, to thereby align the lenses in the lens array with the TFT forming areas on the substrate based on the alignment reference position. The laser beams are irradiated onto the lens array when the substrate moves and the TFT forming areas reach the underneath of the corresponding lenses of the lens array, and the laser beams are focused by the plurality of lenses to anneal the amorphous silicon film in each TFT forming area.

Abstract: The present invention provides a deposition mask including: a mask layer having an aperture pattern that is formed in conformity with a transparent electrode to be formed on a display surface of a display panel, with the same shape and size as the transparent electrode; and a support layer having plural support lines formed on one surface of the mask layer across the aperture pattern. In the mask, an arrangement pitch for the support lines of the support layer is set so as to reduce moire fringes or diffraction fringes that appear due to shadows of the support lines, which are transferred onto the transparent electrode as unevenness in deposition thickness.