Abstract: A probe measurement system for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies.

Abstract: A probe measurement system for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies.

Abstract: A direct current and a modulation signal are simultaneously applied to contact pads on a wafer to test certain devices, such as a laser diode. A probe, probing system, and method of probing reduces signal distortion and power dissipation by transmitting a modulated signal to the device-under-test through an impedance matching resistor and transmitting of a direct current to the device-under-test over a signal path that avoids the impedance matching resistor.

Abstract: A direct current and a modulation signal are simultaneously applied to contact pads on a wafer to test certain devices, such as a laser diode. A probe, probing system, and method of probing reduces signal distortion and power dissipation by transmitting a modulated signal to the device-under-test through an impedance matching resistor and transmitting of a direct current to the device-under-test over a signal path that avoids the impedance matching resistor.

Abstract: A direct current and a modulation signal are simultaneously applied to contact pads on a wafer to test certain devices, such as a laser diode. A probe, probing system, and method of probing reduces signal distortion and power dissipation by transmitting a modulated signal to the device-under-test through an impedance matching resistor and transmitting of a direct current to the device-under-test over a signal path that avoids the impedance matching resistor.

Abstract: A direct current and a modulation signal are simultaneously applied to contact pads on a wafer to test certain devices, such as a laser diode. A probe, probing system, and method of probing reduces signal distortion and power dissipation by transmitting a modulated signal to the device-under-test through an impedance matching resistor and transmitting of a direct current to the device-under-test over a signal path that avoids the impedance matching resistor.

Abstract: A probe measurement system for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies.

Abstract: A probe assembly including a probe, a waveguide to transmission path transition, and a bias tee detachably connected to the probe.

Abstract: The present invention relates to a probe for testing of integrated circuits or other microelectronic devices.

Abstract: In this monolithic detector array, a signal processing layer is epitaxially formed directly on an active detector layer. The active detector layer is supported by a transparent substrate. The three layers are made of intrinsic semiconductors of the same conductivity type (e.g., n-type). The semiconductor forming the active layer has a smaller bandgap than the signal processing and substrate layers. A plurality of vias of opposite conductivity type (e.g, p-type) extend through the signal processing layer into the active detector layer where they form p-n junctions with the active detector layer. These p-n junctions collect charges generated by the radiation and the vias conduct these charges to the signal processing layer where gates, AC background suppression circuitry, and a charge coupled device process the photogenerated signals.