Patents by Inventor Mike F. Chang

Mike F. Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4188245
    Abstract: A method for selectively diffusing a semiconductor body with p-conductivity type impurities utilizing aluminum as a diffusion source and able to be performed in a reuseable open diffusion tube is described. A gas flow is established in the diffusion tube which is essentially an inert gas and includes from one to ten percent oxygen. Simultaneous blanket and selective diffusions may be formed in accordance with this invention by modifying the amount of oxygen in the flow.
    Type: Grant
    Filed: September 18, 1978
    Date of Patent: February 12, 1980
    Assignee: General Electric Company
    Inventors: Mike F. Chang, Alfred Roesch, Richard W. Kennedy
  • Patent number: 4168992
    Abstract: A wafer of semiconductor material processed by thermal gradient zone melting is supported by a beveled inner peripheral surface defining an aperture in a guard ring to minimize the distortion of the thermal gradient at the outer peripheral edge surface of the wafer.
    Type: Grant
    Filed: December 7, 1978
    Date of Patent: September 25, 1979
    Assignee: General Electric Company
    Inventors: Thomas R. Anthony, Harvey E. Cline, Davis K. Hartman, Mike F. Chang
  • Patent number: 4159215
    Abstract: Aluminum is employed as a carrier metal for antimony in order to N-type dope semiconductor material by temperature gradient zone melting (TGZM) processing.
    Type: Grant
    Filed: September 21, 1978
    Date of Patent: June 26, 1979
    Assignee: General Electric Company
    Inventors: Mike F. Chang, Harvey E. Cline, Thomas R. Anthony
  • Patent number: 4108685
    Abstract: An improved method of initiating the moving of a molten zone of an aluminum rich semiconductor material through a solid body of the same semiconductor material to form a planar region embodies alloying the aluminum metal to the semiconductor material of the surface of the body in contact therewith at a temperature of from 577.degree. to 660.degree. C. The alloying process enables one to migrate two or more intersecting "wires" simultaneously, as well as three "wires" intersecting at a common point of origin, through the body.
    Type: Grant
    Filed: March 31, 1977
    Date of Patent: August 22, 1978
    Assignee: General Electric Company
    Inventors: Mike F. Chang, Harvey E. Cline, Thomas R. Anthony
  • Patent number: 4076559
    Abstract: Disclosed is a method of manufacturing semiconductor devices by thermomigrating impurities through an oxide layer.
    Type: Grant
    Filed: March 18, 1977
    Date of Patent: February 28, 1978
    Assignee: General Electric Company
    Inventors: Mike F. Chang, Thomas R. Anthony, Harvey E. Cline
  • Patent number: 4042448
    Abstract: Disclosed is a technique useful in the manufacture of semiconductor devices. A semiconductor wafer is provided and isolation regions are formed therein by the temperature gradient zone melting process. A mask is applied to the surface of the wafer, but the portions of the surface near the isolation regions are left exposed. An etching step follows which removes a small amount of material from the surface of the isolation regions to smooth irregularities formed there during the zone melting process.
    Type: Grant
    Filed: November 26, 1975
    Date of Patent: August 16, 1977
    Assignee: General Electric Company
    Inventor: Mike F. Chang
  • Patent number: 4040868
    Abstract: An improved method of initiating the moving of a molten zone of a metal-rich semiconductor material through a solid body of the same semiconductor material to form a planar region embodies the alloying of the metal to the semiconductor material of the surface of the body in contact therewith. The alloying process enables one to migrate two or more intersecting "wires" simultaneously, as well as three "wires" intersecting at a common point of origin, through the body.
    Type: Grant
    Filed: March 9, 1976
    Date of Patent: August 9, 1977
    Assignee: General Electric Company
    Inventors: Mike F. Chang, Harvey E. Cline, Thomas R. Anthony
  • Patent number: 4021269
    Abstract: Disclosed is a technique useful in the manufacture of semiconductor devices. When a semiconductor device is manufactured by the temperature gradient zone melting process, it is subjected to a short diffusion cycle following thermomigration. The cycle smooths out discontinuities caused by breaks in wire migration and effectively seals and isolates occluded particles of the impurity remaining in the semiconductor body. The cycle is also useful for providing large area doped regions that cannot be formed by wire migration due to constraints on wire direction.
    Type: Grant
    Filed: November 26, 1975
    Date of Patent: May 3, 1977
    Assignee: General Electric Company
    Inventors: Thomas R. Anthony, Mike F. Chang, Harvey E. Cline
  • Patent number: 4006040
    Abstract: An improved method of initiating the moving of a molten zone of a metal-rich semiconductor material through a solid body of the same semiconductor material embodies the sintering of the metal to the surface of the body. The sintering process enables one to migrate two or more intersecting "wires" simultaneously as well as three wires intersecting at a common point of origin.
    Type: Grant
    Filed: December 31, 1975
    Date of Patent: February 1, 1977
    Assignee: General Electric Company
    Inventors: Harvey E. Cline, Thomas R. Anthony, Mike F. Chang
  • Patent number: 3998661
    Abstract: Annular regions of a predetermined type conductivity are produced in a body of semiconductor material by a temperature gradient zone melting process embodying both noncentro-symmetric rotation of the body as well as secondary rotation of the body about its vertical axis.
    Type: Grant
    Filed: December 31, 1975
    Date of Patent: December 21, 1976
    Assignee: General Electric Company
    Inventors: Mike F. Chang, Thomas R. Anthony, Harvey E. Cline
  • Patent number: 3998653
    Abstract: A solution of potassium hydroxide is employed to remove the reaction products of aluminum migrated through silicon-semiconductor material by thermal gradient zone melting processing.
    Type: Grant
    Filed: March 9, 1976
    Date of Patent: December 21, 1976
    Assignee: General Electric Company
    Inventors: Thomas R. Anthony, Harvey E. Cline, Mike F. Chang