Abstract: A light-emitting device includes a substrate, a light-emitting element mounted on a first flat surface of the substrate, and a glass sealing member for sealing the light-emitting element, wherein the sealing member is in contact with the first flat surface and a side surface of the substrate and a second flat surface of the surface opposite to the first flat surface is exposed.

Abstract: Objects of the present invention are to provide a method for producing a Group III nitride semiconductor single crystal, which method enables production of a Group III nitride semiconductor single crystal having a flat surface by means of a crucible having any inside diameter; to provide a self-standing substrate obtained from the Group III nitride semiconductor single crystal; and to provide a semiconductor device employing the self-standing substrate. The production method includes adding the template, a flux, and semiconductor raw materials to a crucible and growing a Group III nitride semiconductor single crystal while the crucible is rotated. In the growth of the semiconductor single crystal, the crucible having an inside diameter R (mm) is rotated at a maximum rotation speed ? (rpm) satisfying the following conditions: ?1?4????1+4; ?1=10z; and z=?0.78×log10(R)+3.1.

Abstract: The present invention provides a method for producing a Group III nitride semiconductor crystal and a GaN substrate, in which the transfer of dislocation density or the occurrence of cracks can be certainly reduced on a growth substrate, and the Group III nitride semiconductor crystal can be easily separated from a seed crystal. A mask layer is formed on a GaN substrate, to thereby form an exposed portion of the GaN substrate, and an unexposed portion of the GaN substrate. Through a flux method, a GaN layer is formed on the exposed portions of the GaN substrate in a molten mixture containing at least Group III metal and Na. At that time, non-crystal portions containing the components of the molten mixture are formed on the mask layer so as to be covered with the GaN layer grown on the GaN substrate and the mask layer.

Abstract: A mask layer is formed on a Ga polarity surface of the GaN substrate as a growth substrate. Subsequently, a protective film PF is formed on a N polarity surface of the GaN substrate. Then, a plurality of concave portions is formed from the mask layer extending to the GaN substrate, to thereby form a seed crystal. The seed crystal is etched in a Na melt, and a plurality of concave portions having a facet plane exposed. The seed crystal and the raw materials are placed in a crucible, and the pressure and temperature inside the crucible are increased. Thus, a target GaN layer is grown in the upward direction on the surface of the mask layer and the lateral direction over the concave portions.

Abstract: The present invention provides a glass-sealed LED lamp which includes a mounting substrate, an LED chip mounted on the mounting substrate, a glass sealing body, and a glass bonding portion bonding the LED chip to a portion of a lower surface side of the glass sealing body. A clearance between a lower surface of the glass sealing body and an upper surface of the mounting substrate side, which causes total reflection at an interface between the glass sealing body and the clearance, is formed outward of the portion of the lower surface side of the glass sealing body.

Abstract: A method of manufacturing a LED lamp that is formed by sealing a LED element mounted on a substrate with glass, includes a mounting process for mounting the LED element on the substrate, a sealing member preparation process for preparing a glass sealing member that includes a concave portion being capable of housing the LED element, and a sealing process wherein the sealing member is arranged so that a forming surface of the concave portion faces the LED element, the sealing member is bonded to the substrate by thermal compression bonding, and the forming surface of the concave portion is made along the LED element.

Abstract: When a p-layer 4 composed of GaN is maintained at ordinary temperature and TNO is sputtered thereon by an RF magnetron sputtering method, a laminated TNO layer 5 is in an amorphous state. Then, there is included a step of thermally treating the amorphous TNO layer in a reduced-pressure atmosphere where hydrogen gas is substantially absent to thereby crystallize the TNO layer. At the sputtering, an inert gas is passed through together with oxygen gas, and volume % of the oxygen gas contained in the gas passed through is 0.10 to 0.15%. In this regard, oxygen partial pressure is 5×10?3 Pa or lower. The temperature of the thermal treatment is 500° C. for about 1 hour.

Abstract: Objects of the present invention are to provide a method for producing a Group III nitride semiconductor single crystal, which method enables production of a Group III nitride semiconductor single crystal having a flat surface by means of a crucible having any inside diameter; to provide a self-standing substrate obtained from the Group III nitride semiconductor single crystal; and to provide a semiconductor device employing the self-standing substrate. The production method includes adding the template, a flux, and semiconductor raw materials to a crucible and growing a Group III nitride semiconductor single crystal while the crucible is rotated. In the growth of the semiconductor single crystal, the crucible having an inside diameter R (mm) is rotated at a maximum rotation speed ? (rpm) satisfying the following conditions: ?1?4????1+4; ?1=10z; and z=?0.78×log10(R)+3.1.

Abstract: The present invention provides a semiconductor crystal removal apparatus which realizes effective removal of a semiconductor crystal from a crucible through rapid melting of a solidified flux, and a method for producing a semiconductor crystal. The semiconductor crystal removal apparatus includes a crucible support for supporting a crucible so that the opening of the crucible is directed downward; a heater for heating the crucible supported on the crucible support; and a semiconductor crystal receiving net for receiving a semiconductor crystal falling from the opening of the crucible. The semiconductor crystal removal apparatus further includes a determination portion for determining removal of the semiconductor crystal on the basis of a change in weight through falling of the semiconductor crystal.

Abstract: A manufacturing method of a mounting part of a semiconductor light emitting element comprising: preparing a semiconductor light emitting element including an electrode which has a surface, and a board which has a surface; forming a plurality of bump material bodies on at least one of the surface of the electrode and the surface of the board by shaping bump material into islands, wherein the bump material is paste in which metal particles are dispersed, a top surface and a bottom surface of the bump material bodies have different areas, and the top surface is practically flat; solidifying the bump material bodies by thermally processing the bump material bodies; and fixing the semiconductor light emitting element and the board through the bumps.

Abstract: An n-type layer of a light-emitting device has a structure in which a first n-type layer, a second n-type layer and a third n-type layer are sequentially laminated in this order on a sapphire substrate, and an n-electrode composed of V/Al is formed on the second n-type layer. The first n-type layer and the second n-type layer are n-GaN, and the third n-type layer is n-InGaN. The n-type impurity concentration of the second n-type layer is higher than that of the first n-type layer and the third n-type layer.

Abstract: Sample A is produced by sequentially forming a first insulating film of SiO2 and a reflective film on a sapphire substrate. Sample B is produced by sequentially forming a first insulating film of SiO2, a reflective film, and a second insulating film of SiO2 on a sapphire substrate. In both samples A and B, the reflectance of the reflective film was measured at a wavelength of 450 nm before and after heat treatment. Heat treatment was performed at 600° C. for three minutes. As shown in FIG. 1, in Al/Ag/Al where Al has a thickness of 1 ? to 30 ?, Ag/Al where Al has a thickness of 20 ?, and Al/Ag/Al/Ag/Al where Al has a thickness of 20 ?, the reflectance was 95% or more, which is equivalent to or higher than that of Ag even after the heat treatment.

Abstract: The present invention provides a glass-sealed LED lamp which includes a mounting substrate, an LED chip mounted on the mounting substrate, a glass sealing body, and a glass bonding portion bonding the LED chip to a portion of a lower surface side of the glass sealing body. A clearance between a lower surface of the glass sealing body and an upper surface of the mounting substrate side, which causes total reflection at an interface between the glass sealing body and the clearance, is formed outward of the portion of the lower surface side of the glass sealing body.

Abstract: A light emitting element which emits light of a wavelength, includes a substrate which is transparent to the wavelength of emitted light and includes a first surface and a second surface; a semiconductor layer stacked on the first surface; a first electrode which is reflective to the wavelength of emitted light and formed on a surface of the semiconductor layer, wherein electrical resistance of the first electrode in a farthest distance is equal to or smaller than 1?; and a second electrode which is reflective to the wavelength of emitted light and formed on the second surface, wherein electrical resistance of the second electrode in a farthest distance is equal to or smaller than 1?.

Abstract: A method for producing a light-emitting device including a growth substrate made of Group III nitride semiconductor, and a Group III nitride semiconductor layer stacked on the top surface of the growth substrate, includes forming, between the growth substrate and the semiconductor layer, a stopper layer exhibiting resistance to a wet etchant, and wet-etching the bottom surface of the growth substrate until the stopper layer is exposed.

Abstract: A method of manufacturing a light-emitting device including a light-emitting element mounted on a substrate and sealed with a glass. The method includes heating the glass by a first mold that is heated to a temperature higher than a yield point of the glass, the glass contacting the first mold, and pressing the glass against the light-emitting element mounted on the substrate supported by a second mold to seal the light-emitting element with the glass.

Abstract: There have been demands for transparent electrode materials and magnetic materials, each having a wide range of applications. In view of the situations, a novel functional device and a method for forming an oxide material are provided. A functional device includes an AlxGayInzN layer (wherein 0?x?1, 0?y?1, and 0?z?1) and an oxide material layer composed of a metal oxide and formed on the AlxGayInzN layer. The metal oxide may be TiO2. The present invention provides a functional device that includes a group III nitride layer having excellent physical and chemical properties and a film integrally formed thereon. The film reflects less light at the interface and has chemical resistance and high durability.

Abstract: A method for forming an electrode for Group-III nitride compound semiconductor light-emitting devices includes a step of forming a first electrode layer having an average thickness of less than 1 nm on a Group-III nitride compound semiconductor layer, the first electrode layer being made of a material having high adhesion to the Group-III nitride compound semiconductor layer or low contact resistance with the Group-III nitride compound semiconductor layer and also includes a step of forming a second electrode layer made of a highly reflective metal material on the first electrode layer.

Abstract: An object of the present invention is to remove micro-scratches on a surface of a GaN substrate cut from a GaN ingot. The invention is directed to establish a method for surface treatment of a GaN substrate, including heating the surface in an atmosphere containing trimethylgallium, ammonia, and hydrogen. It is preferable that the trimethylgallium feeding rate is 150 ?mol/min or higher, the ratio of trimethylgallium feeding rate to ammonia feeding rate (V/III ratio) is 1,200 to 4,000, and the heating temperature is 1,000° C. to 1,250° C. In addition, the temperature of the surface treatment is set to be higher than that of the following GaN growth, and the feed rate of trimethylgallium is lower than that of the growth procedure. RMS of roughness on the substrate was equal to or less than 1.3 nm, and the substrate whose step condition is excellent can be obtained.