Abstract: An electronic component includes a ceramic body, and an external electrode on the ceramic body, the external electrode includes a base layer continuously covering an end surface of the ceramic body and a portion of a side surface bordering the end surface, and a plating layer covering the base layer, the ceramic body includes a recess open on the side surface, an opening of the recess includes a pair of edges, one edge of the opening is located within a covered region on the side surface covered with the base layer, and the other edge of the opening is spaced away from the covered region.

Abstract: A software component update system is connected to a first database and a second database and includes a component tree rebuilding unit that rebuilds a software component tree of the second database on the basis of tag information and software component tree information of the first database; a component extraction unit that specifies the software components of the second database requiring update mirroring, on the basis of the rebuilt software component tree; and a file update unit that updates the software component file of the specified software components.

Abstract: Processor displays avatar to move from a starting coordinate to first movement destination coordinates in accordance with each instruction in first instruction set. Processor records coordinates after movement by instructions in the first instruction set, as first group, in accordance with instruction included in the first instruction set. Processor returns avatar to the before starting movement coordinates and displays avatar. Processor displays avatar to move from the before starting movement coordinates to second movement destination coordinates in accordance with each instruction in second instruction set. Processor records coordinates after movement by instructions in the second instruction set.

Abstract: A graph display method, wherein a first graph corresponding to a first mathematical expression is displayed on a display, and when an operation to input, as a modified expression of the first mathematical expression, a third mathematical expression having a notation different from that of the first mathematical expression is accepted, and a third graph corresponding to the third mathematical expression is displayed on the display, the third graph is displayed on the display in a way of displaying, the way being different depending on whether a condition that the first mathematical expression is mathematically identical to the third mathematical expression is satisfied or not.

Abstract: A semiconductor device capable of retaining data for a long time is provided. A leakage current path between adjacent memory cells in a memory cell array included in the semiconductor device is blocked without increasing the number of manufacturing steps, so that memory retention characteristics can be improved.

Abstract: A calculating device includes a receiver-and-transmitter and a processor. The receiver-and-transmitter is configured to communicate with a server. The processor performs processes including: transmitting (i) an increment of an independent variable per one display dot according to a variance range of the independent variable and the number of display dots on a screen, (ii) a function expression of the independent variable, and (iii) the variance range of the independent variable, to the server; receiving coordinate data of each display dot for generating a graph in a graph display range on the screen, from the server; and displaying a graph image generated at each display dot of the graph display range based on the coordinate data.

Abstract: Processor displays avatar to move from a starting coordinate to first movement destination coordinates in accordance with each instruction in first instruction set. Processor records coordinates after movement by instructions in the first instruction set, as first group, in accordance with instruction included in the first instruction set. Processor returns avatar to the before starting movement coordinates and displays avatar. Processor displays avatar to move from the before starting movement coordinates to second movement destination coordinates in accordance with each instruction in second instruction set. Processor records coordinates after movement by instructions in the second instruction set.

Abstract: According to an embodiment, an electronic device includes a processor. The processor is configured to perform: formula input process of inputting a plurality of pieces of formula data in association with respective formula numbers through a user operation; a formula setting process of setting formula data in the pieces of formula data input by the formula input process as an output target by the user operation; cited formula extraction process of extracting another formula data in the pieces of formula data when the formula data set by the formula setting process cites a formula number of the another formula data; and a data output process of outputting the set formula data with the extracted another formula data.

Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

Abstract: A graph display method, wherein a first graph corresponding to a first mathematical expression is displayed on a display, and when an operation to input, as a modified expression of the first mathematical expression, a third mathematical expression having a notation different from that of the first mathematical expression is accepted, and a third graph corresponding to the third mathematical expression is displayed on the display, the third graph is displayed on the display in a way of displaying, the way being different depending on whether a condition that the first mathematical expression is mathematically identical to the third mathematical expression is satisfied or not.

Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

Abstract: A calculating device includes a receiver-and-transmitter and a processor. The receiver-and-transmitter is configured to communicate with a server. The processor performs processes including: transmitting (i) an increment of an independent variable per one display dot according to a variance range of the independent variable and the number of display dots on a screen, (ii) a function expression of the independent variable, and (iii) the variance range of the independent variable, to the server; receiving coordinate data of each display dot for generating a graph in a graph display range on the screen, from the server; and displaying a graph image generated at each display dot of the graph display range based on the coordinate data.

Abstract: A semiconductor device capable of retaining data for a long time is provided. A leakage current path between adjacent memory cells in a memory cell array included in the semiconductor device is blocked without increasing the number of manufacturing steps, so that memory retention characteristics can be improved.

Abstract: According to an embodiment, an electronic device includes a processor. The processor is configured to perform: formula input process of inputting a plurality of pieces of formula data in association with respective formula numbers through a user operation; a formula setting process of setting formula data in the pieces of formula data input by the formula input process as an output target by the user operation; cited formula extraction process of extracting another formula data in the pieces of formula data when the formula data set by the formula setting process cites a formula number of the another formula data; and a data output process of outputting the set formula data with the extracted another formula data.

Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

Abstract: A semiconductor device is provided, which includes a single crystal semiconductor layer formed over an insulating surface and having a source region, a drain region, and a channel formation region, a gate insulating film covering the single crystal semiconductor layer and a gate electrode overlapping with the channel formation region with the gate insulating film interposed therebetween. In the semiconductor device, at least the drain region of the source and drain regions includes a first impurity region adjacent to the channel formation region and a second impurity region adjacent to the first impurity region. A maximum of an impurity concentration distribution in the first impurity region in a depth direction is closer to the insulating surface than a maximum of an impurity concentration distribution in the second impurity region in a depth direction.

Abstract: The present invention provides a composition for controlling harmful arthropods having an excellent control efficacy on harmful arthropods. A composition for controlling harmful arthropods comprising a carboxylic acid compound represented by a formula (I); wherein each of symbols are the same as defined in the Description; or salts thereof and at least one kind of neonicotinoid compounds selected from the group (A) consisting of imidacloprid, clothianidin, thiamethoxam, dinotefuran, acetamiprid, thiacloprid and nitenpyram, shows an excellent controlling efficacy on harmful arthropods.

Abstract: According to an embodiment, an electronic device includes a processor. The processor is configured to perform: formula input process of inputting a plurality of pieces of formula data in association with respective formula numbers through a user operation; a formula setting process of setting formula data in the pieces of formula data input by the formula input process as an output target by the user operation; cited formula extraction process of extracting another formula data in the pieces of formula data when the formula data set by the formula setting process cites a formula number of the another formula data; and a data output process of outputting the set formula data with the extracted another formula data.