Abstract: A tracked agricultural combine vehicle for harvesting, hulling and sorting grain includes a grain working section driven via a tension roller clutch controlled power transmission belt and further including integrated control means for left and right side propulsion track assemblies wherein individual track steering commands in the form of differential track speed control are derived from a common steering wheel input; vehicle speed is controlled by a single input means which controls the speed of both tracks.

Abstract: In a rapid thermal processing (RTP) of a large-diameter wafer, a wafer is heat treated by an upper high-temperature furnace and a lower low-temperature furnace, which are separated from and can be brought into close contact with one another by a relative vertical position adjusting means. The upper high-temperature furnace has an open bottom which is shut by an openable, heat insulating shutter. Height of the apparatus as a whole can be shortened.

Abstract: A tracked agricultural combine vehicle for harvesting, hulling and sorting grain includes integrated control means for left and right side propulsion track assemblies wherein individual track steering commands in the form of differential track speed control are derived from a common steering wheel input and vehicle speed is controlled by a single input means which controls the speed of both tracks.

Abstract: A wafer(s) for producing semiconductor devices is subjected to heat treatment in a vertical thermal reactor, which is provided with an electric heating means setting a first temperature and another electric heating means setting a second temperature higher than the first temperature. The wafer(s) is moved upwards and is subjected to a treatment in the second region of the vertical thermal reactor; and, is reverted to the first region. Rapid thermal processing of 6 or 8 inch wafer(s) is possible without causing slip lines.

Abstract: In a rapid thermal processing (RTP) of a large-diameter wafer, a wafer is heat treated by an upper high-temperature furnace and a lower low-temperature furnace, which are separated from and can be brought into close contact with one another by a relative vertical position adjusting means. The upper high-temperature furnace has an open bottom which is shut by an openable, heat insulating shutter. Height of the apparatus as a whole can be shortened.

Abstract: A wafer(s) for producing semiconductor devices is subjected to heat treatment in a vertical thermal reactor, which is provided with an electric heating means setting a first temperature and another electric heating means setting a second temperature higher than the first temperature. The wafer(s) is moved upwards and is subected to a treatment in the second region of the vertical thermal reactor; and, is reverted to the first region. Rapid thermal processing of 6 or 8 inch wafer(s) is possbile without causing slip lines.

Abstract: An ultrathin polymeric membrane has a membrane thickness of 10 to 1,000 .ANG.. The membrane is constituted of polycarboxylate and obtained by the spin coating method or by the Langmuir-Blodgett method. The polycarboxylate contains recurrent units represented by the formula (I) ##STR1## wherein R.sub.1 and R.sub.2 represent different groups and each stands for a methyl group or a hydrogen atom, and R represents a hydrocarbon group selected from the group consisting of a branched alkyl group having 3 to 12 carbon atoms, a cycloalkyl group having 3 to 12 carbon atoms, a substituted alkyl group having 2 to 6 carbon atoms, a substituted cycloalkyl group having 3 to 10 carbon atoms and a siloxanic hydrocarbon group.

Abstract: A plasma CVD apparatus for forming a deposited film on a base body by introducing a gas of a compound into a chamber and converting the gas into plasma by applying a high frequency electric power, includes a gas feeding pipe leading from the exterior of the chamber into the interior of the chamber, and a heating device. The heating device heats at least a part of the gas feeding pipe inside the chamber, thereby preventing the gas from condensing or solidifying. With this apparatus, plasma CVD can stably be carried out using gases of various compounds which are liquid or solid at room temperature.

Abstract: A silicon nitride film containing from 20 to 70% oxygen, for use as a surface passivation film, has enhanced ultraviolet ray transmissivity while exhibiting the desirable moisture proofness quality of a silicon nitride film.

Abstract: A plasma chemical vapor deposition method for forming a film on a substrate which is placed on one of a pair of electrodes oppositely arranged within the reaction chamber of a reactor. A plurality of power generators of different frequencies are applied to the electrodes to excite reactive gases introduced into the reaction chamber, whereby the reactive gases are transformed into a plasma and a desired film is formed on the substrate. Film with a small number of pinholes was formed at a relatively high deposition rate by combinations of power generator frequencies of, for example, 13.56 MHz and 1 MHz, 13.56 MHz and 50 KHz, and 5 MHz and 400 KHz.

Abstract: A silicon nitride film containing from 20 to 70% oxygen, for use as a surface passivation film, has enhanced ultraviolet ray transmissivity while exhibiting the desirable moisture proofness quality of a silicon nitride film.

Abstract: A semiconductor device having a deposited phosphosilicate glass film, containing an insubstantial amount of hydrogen and a low phosphorus concentration, is manufactured at a high mass productivity. This semiconductor device is manufactured by first placing plural substrates for semiconductor devices to be treated in a reaction tube so that the main surfaces of the substrates are substantially vertically aligned with respect to one another and are substantially perpendicularly intersected by the central axis of the reaction tube, the reaction tube being provided with at least two gas feed pipes having plural small openings pierced along the longitudinal direction thereof.

Abstract: A semiconductor device with a fuse including an insulating layer having at least one step. A fusible film on the insulating layer crosses the step and a covering film is formed on the fusible film, the step and the insulating layer. When the portion of the fusible film crossing the step is irradiated with a laser beam the portion of the fusible film on the upper surface of the insulating layer melts and flows onto the lower surface of the insulating layer without forming a hole, thereby separating the fusible film at the step.

Abstract: Impurity concentration doped in PSG deposited on semiconductor substrates employing chemical vapor deposition process depends on the flow rate of reactive gases in the neighborhood of the first one of the plural semiconductor substrates processed with the same equipment in one batch at the same time. Regulation of the flow rate of the reactive gases in the neighborhood of the first one of the plural semiconductor substrates processed with the same equipment in one batch at the same time is effective to make the impurity concentration doped in PSG uniform for all the semiconductor substrates processed in one batch employing the presently available sealed tube type equipment for vacuum vapor deposition process. The flow rate regulation is possible by monitoring readings of a manometer which is arranged around the inlets thereof and which was calibrated by the flow rate of a nonreactive gas such as nitrogen gas.

Abstract: A method for drying semiconductor substrates wherein a plurality of semiconductor substrates are irradiated with electromagnetic waves emitted from a waveguide in a non-reactive atmosphere of normal atmospheric pressure while the semiconductor substrates are positioned so that the predominant faces thereof substantially form right angles to the face of an opening of the waveguide.

Abstract: A method of plasma enhanced chemical vapor deposition of a phosphosilicate glass film on a substrate from a reaction gas mixture including SiH.sub.4, N.sub.2 O and PH.sub.3 is disclosed. This deposition is effected under the conditions such that a mol ratio of N.sub.2 O to SiH.sub.4 (N.sub.2 O/SiH.sub.4) in the reaction gas mixture is 50 or more and that a mol ratio of PH.sub.3 to SiH.sub.4 (PH.sub.3 /SiH.sub.4) in the reaction gas mixture is 0.08 or less. In the phosphosilicate glass film thus deposited, no cracking occurs due to a high temperature heat-treatment and due to the stress, caused by cooling the deposited films to an ordinarily ambient temperature.

Abstract: A process for high pressure oxidation of silicon comprising the steps of inserting silicon wafers and an oxidizing substance into a quartz capsule sealing the quartz capsule gas-tightly by fusing, and heating the quartz capsule to generate a high pressure oxidizing atmosphere therein and to form an oxide film on the silicon wafers without a flow of the oxidizing atmosphere. In a case where water is used as the oxidizing substance, the water is frozen and the inside space of the quartz capsule is exhausted before the sealing operation. Furthermore, in a case where an oxidizing gas, e.g. oxygen gas, is used as the oxidizing substance, if the pressure of the gas is higher than the ambient pressure, the quartz capsule is cooled to decrease the gas pressure to a pressure below the ambient pressure before the sealing operation.

Abstract: A process for high pressure oxidation of silicon comprising the steps of inserting silicon wafers and an oxidizing substance into a quartz capsule sealing the quartz capsule gas-tightly by fusing, and heating the quartz capsule to generate a high pressure oxidizing atmosphere therein and to form an oxide film on the silicon wafers without a flow of the oxidizing atmosphere. In a case where water is used as the oxidizing substance, the water is frozen and the inside space of the quartz capsule is exhausted before the sealing operation. Furthermore, in a case where an oxidizing gas, e.g. oxygen gas, is used as the oxidizing substance, if the pressure of the gas is higher than the ambient pressure, the quartz capsule is cooled to decrease the gas pressure to a pressure below the ambient pressure before the sealing operation.

Abstract: A process for high pressure oxidation of silicon comprising the steps of inserting silicon wafers and an oxidizing substance into a quartz capsule sealing the quartz capsule gas-tightly by fusing, and heating the quartz capsule to generate a high pressure oxidizing atmosphere therein and to form an oxide film on the silicon wafers without a flow of the oxidizing atmosphere. In a case where water is used as the oxidizing substance, the water is frozen and the inside space of the quartz capsule is exhausted before the sealing operation. Furthermore, in a case where an oxidizing gas, e.g. oxygen gas, is used as the oxidizing substance, if the pressure of the gas is higher than the ambient pressure, the quartz capsule is cooled to decrease the gas pressure to a pressure below the ambient pressure before the sealing operation.

Abstract: Epitaxial layers are formed by introducing a reaction gas mixture into a reaction vessel in which semiconductor substrates are located, under a pressure of not higher than 1333 Pa (10 Torr), and heating said semiconductor substrates by high frequency induction power so that layers grow epitaxially on said semiconductor substrates. The frequency f of high frequency power is not higher than 50 kHz, and the pressure P in said reaction vessel is maintained in the following range ##STR1## wherein, P is the pressure in units of Pa or Torr in the reaction vessel and f is the frequency in kHz of said high frequency power.