Abstract: The present disclosure provides a method of forming a semiconductor structure. The method includes providing a semiconductor substrate and forming a patterned metal structure on the semiconductor substrate, wherein the patterned metal structure includes a first metal layer and a second metal layer deposited in a single deposition step. The method further includes etching a portion of the second metal layer thereby forming a metal plug in the second metal layer, the first metal layer of the patterned metal structure having a first metal feature underlying and contacting the metal plug.

Abstract: Systems, computer program products, and methods are described herein for component-level threat assessment in a computing environment. The present disclosure is configured to capture state information associated with a computing environment; determine correlation measures for the components in the computing environment based on at least the state information; determine threat vectors associated with the components; determine mitigation protocols to be implemented on the components in response to an incidence of the threat vectors on the components; determine a first sequence in which the mitigation protocols are to be implemented based on at least the correlation measures for the components; and implement the mitigation protocols on the components in the first sequence to reduce a propagation effect of the threat vectors across the computing environment.

Abstract: An integrated circuit includes a first diffusion area for a first type transistor. The first type transistor includes a first drain region and a first source region. A second diffusion area for a second type transistor is separated from the first diffusion area. The second type transistor includes a second drain region and a second source region. A gate electrode continuously extends across the first diffusion area and the second diffusion area in a routing direction. A first metallic structure is electrically coupled with the first source region. A second metallic structure is electrically coupled with the second drain region. A third metallic structure is disposed over and electrically coupled with the first and second metallic structures. A width of the first metallic structure is substantially equal to or larger than a width of the third metallic structure.

Abstract: Interconnect structures and method of forming the same are disclosed herein. An exemplary interconnect structure includes a first contact feature in a first dielectric layer, a second dielectric layer over the first dielectric layer, a second contact feature over the first contact feature, a barrier layer between the second dielectric layer and the second contact feature, and a liner between the barrier layer and the second contact feature. An interface between the first contact feature and the second contact feature includes the liner but is free of the barrier layer.

Abstract: Access entitlement decisioning for a network-based application occurs dynamically at the time of access request based on current scenario indicators. In addition to determining whether a user should be granted access/entitlement, in certain instances, the current scenario indicators are relied upon to determine the level of entitlement/access (i.e., less or more than standard access) and the period for enforcing the determined access/entitlement. The current scenario indicators may be associated with the user, the application and/or the computing environment and are indicative of a heightened awareness for the occurrence of potential deceptive events or the likelihood for inefficiencies in use of the application and/or computing environment.

Abstract: A first fin structure is disposed over a substrate. The first fin structure contains a semiconductor material. A gate dielectric layer is disposed over upper and side surfaces of the first fin structure. A gate electrode layer is formed over the gate dielectric layer. A second fin structure is disposed over the substrate. The second fin structure is physically separated from the first fin structure and contains a ferroelectric material. The second fin structure is electrically coupled to the gate electrode layer.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC includes a first fin projecting vertically from a semiconductor substrate. A second fin projects vertically from the semiconductor substrate, where the second fin is spaced from the first fin, and where the first fin has a first uppermost surface that is disposed over a second uppermost surface of the second fin. A nanostructure stack is disposed over the second fin and vertically spaced from the second fin, where the nanostructure stack comprises a plurality of vertically stacked semiconductor nanostructures. A pair of first source/drain regions is disposed on the first fin, where the first source/drain regions are disposed on opposite sides of an upper portion of the first fin. A pair of second source/drain regions is disposed on the second fin, where the second source/drain regions are disposed on opposite sides of the nanostructure stack.

Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes an operative memory device. A regulating access apparatus is coupled to the operative memory device. The regulating access apparatus includes one or more regulating MTJ devices respectively having a regulating free layer, a regulating dielectric barrier layer, and a regulating pinned layer separated from the regulating free layer by the regulating dielectric barrier layer. The regulating pinned layer continuously extends between opposing outermost sidewalls of the regulating dielectric barrier layer.

Abstract: The present disclosure provides a method of forming a semiconductor device including an nFET structure and a pFET structure where each of the nFET and pFET structures include a semiconductor substrate and a gate trench. The method includes depositing an interfacial layer in each gate trench, depositing a first ferroelectric layer over the interfacial layer, removing the first ferroelectric layer from the nFET structure, depositing a metal oxide layer in each gate trench, depositing a second ferroelectric layer over the metal oxide layer, removing the second ferroelectric layer from the pFET structure, and depositing a gate electrode in each gate trench.

Abstract: The present invention provides compounds, compositions thereof, and methods of using the MK2 inhibitors of the Formula:

Abstract: In some embodiments, the present disclosure relates to an integrated circuit. The integrated circuit includes an operative memory device coupled to a bit-line. The operative memory device is configured to store a data state. A regulating access apparatus is coupled between the operative MTJ device and a first word-line. The regulating access apparatus includes one or more regulating MTJ devices that are configured to control a current provided to the operative memory device. The one or more regulating MTJ devices respectively include a free layer, a dielectric barrier layer on the free layer, and a pinned layer separated from the free layer by the dielectric barrier layer. The pinned layer covers a center of a surface of the dielectric barrier layer that faces the pinned layer.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC includes a first fin projecting vertically from a semiconductor substrate. A second fin projects vertically from the semiconductor substrate, where the second fin is spaced from the first fin, and where the first fin has a first uppermost surface that is disposed over a second uppermost surface of the second fin. A nanostructure stack is disposed over the second fin and vertically spaced from the second fin, where the nanostructure stack comprises a plurality of vertically stacked semiconductor nanostructures. A pair of first source/drain regions is disposed on the first fin, where the first source/drain regions are disposed on opposite sides of an upper portion of the first fin. A pair of second source/drain regions is disposed on the second fin, where the second source/drain regions are disposed on opposite sides of the nanostructure stack.

Abstract: A first fin structure is disposed over a substrate. The first fin structure contains a semiconductor material. A gate dielectric layer is disposed over upper and side surfaces of the first fin structure. A gate electrode layer is formed over the gate dielectric layer. A second fin structure is disposed over the substrate. The second fin structure is physically separated from the first fin structure and contains a ferroelectric material. The second fin structure is electrically coupled to the gate electrode layer.

Abstract: The present application relates to a top plate jacking device and jacking construction method configured for V-shaped columns, the top plate jacking device comprising a temporary support pile comprises a plurality of pile holes arranged on a construction surface, a bottom end of the pile hole is cast-in-place with a bearing platform, a temporary support column is inserted on the bearing platform, a plurality of pillars are fixed at a top of the temporary support column, wherein comprises a plurality of vertically connected column segments, two adjacent column segments detachably connected vertically through a connecting component; a support block is provided at a top of the plurality of pillars, the top of the support block abuts against a lower surface of the top plate; a hydraulic jack is configured to jack the top plate and is provided with a plurality of intervals at the top of the temporary support column.

Abstract: An apparatus includes a memory and a processor. The memory stores descriptions of known vulnerabilities and information generated by a monitoring subsystem. Each description of a known vulnerability identifies software components that are associated with the known vulnerability. The monitoring subsystem monitors software programs that are installed within a computer system. The information includes descriptions of issues that are associated with the software programs. The processor generates a set of mappings, based on a comparison between the text describing the known software vulnerabilities and the text describing the issues. Each mapping associates a software program that is associated with an issue with a known software vulnerability. The processor also uses a machine learning algorithm to predict that a given software program is associated with a particular software vulnerability.

Abstract: The present disclosure provides a method of forming a semiconductor device including an nFET structure and a pFET structure where each of the nFET and pFET structures include a semiconductor substrate and a gate trench. The method includes depositing an interfacial layer in each gate trench, depositing a first ferroelectric layer over the interfacial layer, removing the first ferroelectric layer from the nFET structure, depositing a metal oxide layer in each gate trench, depositing a second ferroelectric layer over the metal oxide layer, removing the second ferroelectric layer from the pFET structure, and depositing a gate electrode in each gate trench.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base. The semiconductor device structure includes a first multilayer stack over the base. The first multilayer stack includes a first channel layer and a second channel layer over and spaced apart from the first channel layer. The semiconductor device structure includes a gate stack over the substrate. The gate stack wraps around the first multilayer stack. The semiconductor device structure includes an inner spacer layer between the second channel layer and the first channel layer and between the first channel layer and the base. The semiconductor device structure includes a bottom spacer over the base. The semiconductor device structure includes a first source/drain structure over the bottom spacer and connected to the second channel layer.

Abstract: An adhesive tape that includes: a first adhesive layer defining an upper surface of the tape; a second adhesive layer defining a lower surface of the tape; and a reinforcement layer (or first and second reinforcement layers) and a thermally activated layer between the first adhesive layer and the second adhesive layer. The thermally activated layer is a thermoplastic polymer layer. The thermoplastic layer may be made of ethylene-vinyl acetate copolymer, modified polyolefin, ethylene acrylic acid copolymer, ethylene terpolymer, polyamide copolymer, poly(trans-1,4-isoprene), polyethylene oxide, or a combination thereof. Further, the thermoplastic layer may exhibit a melting point from 60° C. to 150° C. and may have a molecular weight from 1,000 to 1,000,000.

Abstract: Aspects of the disclosure relate to multi-factor user authentication for card-based payment transactions using blockchain tokens. An computing platform may receive, from a computing device, transaction details associated with a card-based payment transaction corresponding to a user, wherein the transaction details comprise a card number of a payment card. The computing platform may determine, based on the card number, a user device associated with the user. The computing platform may send, to the user device, a one-time passcode (OTP). After sending the OTP, the computing platform may receive a security key. The security key may be generated based on the sent OTP and a blockchain token hash. The computing platform may, based on the received security key, send, to the computing device, a message indicating whether the transaction is approved or declined.