Abstract: A phase mixer circuit is configured to receive a first input clock signal and a second input clock signal, and to generate an intermediate clock signal having an intermediate phase between phases of the first and second input clock signals. The phase mixer circuit is configured to determine a logic value of a mixed code signal, and to generate an output clock signal by mixing one of the first and second input clock signals and the intermediate clock signal.

Abstract: A semiconductor circuit includes a first pad, a second pad, swapping circuit, and an internal circuit. The internal circuit receives a first external signal and a second external signal, and generates a first internal signal and a second internal signal. Based on master information and swapping information, the swapping circuit couples the internal circuit to one of first and second pads to provide a path through which the first internal signal is output and a path through which the first external signal is received, and couples the internal circuit to the other of the first and second pads to provide a path through which the second internal signal is output and a path through which the second external signal is received.

Abstract: A display device includes a voltage wiring pattern in a non-display area and connected to a display area, and between a pad area and the voltage wiring pattern, a metal wiring pattern in the non-display area and connecting the pad area to the voltage wiring pattern, and a sealing member between the pad area and the voltage wiring pattern, and coupling the display panel to an encapsulation substrate. The metal wiring pattern including a lead-in portion connected to the pad area, an overlapping portion overlapping the sealing member, and a connection portion connecting the overlapping portion to the voltage wiring pattern. The overlapping portion includes a first portion corresponding to the lead-in portion, a second portion corresponding to the connection portion, and a third portion extending from the second portion in a direction away from the first portion.

Abstract: A semiconductor circuit includes a first pad, a second pad, swapping circuit, and an internal circuit. The internal circuit receives a first external signal and a second external signal, and generates a first internal signal and a second internal signal. Based on master information and swapping information, the swapping circuit couples the internal circuit to one of first and second pads to provide a path through which the first internal signal is output and a path through which the first external signal is received, and couples the internal circuit to the other of the first and second pads to provide a path through which the second internal signal is output and a path through which the second external signal is received.

Abstract: A semiconductor circuit includes a first pad, a second pad, swapping circuit, and an internal circuit. The internal circuit receives a first external signal and a second external signal, and generates a first internal signal and a second internal signal. Based on master information and swapping information, the swapping circuit couples the internal circuit to one of first and second pads to provide a path through which the first internal signal is output and a path through which the first external signal is received, and couples the internal circuit to the other of the first and second pads to provide a path through which the second internal signal is output and a path through which the second external signal is received.

Abstract: A semiconductor circuit includes a first pad, a second pad, swapping circuit, and an internal circuit. The internal circuit receives a first external signal and a second external signal, and generates a first internal signal and a second internal signal. Based on master information and swapping information, the swapping circuit couples the internal circuit to one of first and second pads to provide a path through which the first internal signal is output and a path through which the first external signal is received, and couples the internal circuit to the other of the first and second pads to provide a path through which the second internal signal is output and a path through which the second external signal is received.

Abstract: A semiconductor circuit includes a first pad, a second pad, swapping circuit, and an internal circuit. The internal circuit receives a first external signal and a second external signal, and generates a first internal signal and a second internal signal. Based on master information and swapping information, the swapping circuit couples the internal circuit to one of first and second pads to provide a path through which the first internal signal is output and a path through which the first external signal is received, and couples the internal circuit to the other of the first and second pads to provide a path through which the second internal signal is output and a path through which the second external signal is received.

Abstract: A semiconductor circuit includes a first pad, a second pad, swapping circuit, and an internal circuit. The internal circuit receives a first external signal and a second external signal, and generates a first internal signal and a second internal signal. Based on master information and swapping information, the swapping circuit couples the internal circuit to one of first and second pads to provide a path through which the first internal signal is output and a path through which the first external signal is received, and couples the internal circuit to the other of the first and second pads to provide a path through which the second internal signal is output and a path through which the second external signal is received.

Abstract: A display device includes: an array substrate including a pixel array in a display area; an encapsulation substrate facing the array substrate; and a sealing member in a sealing area and between the array substrate and the encapsulation substrate. The array substrate includes: an organic insulation layer in a peripheral area between the display area and the sealing area; a power bus line in the peripheral area and including a first wiring layer and a second wiring layer that overlap the organic insulation layer; and a compensation pattern disposed under the sealing member, extending along an outer edge of the sealing member, and including a first compensation layer and a second compensation layer. The first compensation layer is connected to the first wiring layer, and the second compensation layer is on the first compensation layer and connected to the second wiring layer.

Abstract: A semiconductor circuit includes a first pad, a second pad, swapping circuit, and an internal circuit. The internal circuit receives a first external signal and a second external signal, and generates a first internal signal and a second internal signal. Based on master information and swapping information, the swapping circuit couples the internal circuit to one of first and second pads to provide a path through which the first internal signal is output and a path through which the first external signal is received, and couples the internal circuit to the other of the first and second pads to provide a path through which the second internal signal is output and a path through which the second external signal is received.

Abstract: A memory system includes: a first memory module including first volatile memories; a second memory module including second volatile memories, non-volatile memories and a module controller; a memory controller controlling the first and second memory modules through second and third control buses, respectively; and a switch array electrically coupling the second and third control buses, wherein the module controller controls the switch array to electrically couple the second and third control buses in a backup operation for backing up data of the first volatile memories to the non-volatile memories, wherein the first and second memory modules include one or more first memory stacks and one or more second memory stacks, respectively, wherein the first volatile memories are stacked in the first memory stacks, and wherein the second volatile memories, the non-volatile memories and the module controller are stacked in the second memory stacks.

Abstract: A semiconductor circuit includes a first pad, a second pad, swapping circuit, and an internal circuit. The internal circuit receives a first external signal and a second external signal, and generates a first internal signal and a second internal signal. Based on master information and swapping information, the swapping circuit couples the internal circuit to one of first and second pads to provide a path through which the first internal signal is output and a path through which the first external signal is received, and couples the internal circuit to the other of the first and second pads to provide a path through which the second internal signal is output and a path through which the second external signal is received.

Abstract: A memory system includes: a first memory module including first volatile memories; a second memory module including second volatile memories, non-volatile memories and a module controller; a memory controller controlling the first and second memory modules through second and third control buses, respectively; and a switch array electrically coupling the second and third control buses, wherein the module controller controls the switch array to electrically couple the second and third control buses in a backup operation for backing up data of the first volatile memories to the non-volatile memories, wherein the first and second memory modules include one or more first memory stacks and one or more second memory stacks, respectively, wherein the first volatile memories are stacked in the first memory stacks, and wherein the second volatile memories, the non-volatile memories and the module controller are stacked in the second memory stacks.

Abstract: A display device includes: an array substrate including a pixel array in a display area; an encapsulation substrate facing the array substrate; and a sealing member in a sealing area and between the array substrate and the encapsulation substrate. The array substrate includes: an organic insulation layer in a peripheral area between the display area and the sealing area; a power bus line in the peripheral area and including a first wiring layer and a second wiring layer that overlap the organic insulation layer; and a compensation pattern disposed under the sealing member, extending along an outer edge of the sealing member, and including a first compensation layer and a second compensation layer. The first compensation layer is connected to the first wiring layer, and the second compensation layer is on the first compensation layer and connected to the second wiring layer.

Abstract: A display device includes a voltage wiring pattern in a non-display area and connected to a display area, and between a pad area and the voltage wiring pattern, a metal wiring pattern in the non-display area and connecting the pad area to the voltage wiring pattern, and a sealing member between the pad area and the voltage wiring pattern, and coupling the display panel to an encapsulation substrate. The metal wiring pattern including a lead-in portion connected to the pad area, an overlapping portion overlapping the sealing member, and a connection portion connecting the overlapping portion to the voltage wiring pattern. The overlapping portion includes a first portion corresponding to the lead-in portion, a second portion corresponding to the connection portion, and a third portion extending from the second portion in a direction away from the first portion.

Abstract: A memory system includes: a first memory module including first volatile memories; a second memory module including second volatile memories, non-volatile memories and a module controller; a memory controller controlling the first and second memory modules through second and third control buses, respectively; and a switch array electrically coupling the second and third control buses, wherein the module controller controls the switch array to electrically couple the second and third control buses in a backup operation for backing up data of the first volatile memories to the non-volatile memories, wherein the first and second memory modules include one or more first memory stacks and one or more second memory stacks, respectively, wherein the first volatile memories are stacked in the first memory stacks, and wherein the second volatile memories, the non-volatile memories and the module controller are stacked in the second memory stacks.

Abstract: A signal receiving circuit includes a summing circuit, a clocked latch circuit and a feedback circuit. The summing circuit generates a summing signal based on an input signal and a feedback signal. The clocked latch circuit generates a sampling signal by sampling the summing signal in synchronization with a clock signal. The feedback circuit generates the feedback signal by selecting one among a plurality of coefficients based on the sampling signal.

Abstract: A memory system includes: a first memory module including first volatile memories; a second memory module including second volatile memories, non-volatile memories and a module controller; a memory controller controlling the first and second memory modules through second and third control buses, respectively; and a switch array electrically coupling the second and third control buses, wherein the module controller controls the switch array to electrically couple the second and third control buses in a backup operation for backing up data of the first volatile memories to the non-volatile memories, wherein the first and second memory modules include one or more first memory stacks and one or more second memory stacks, respectively, wherein the first volatile memories are stacked in the first memory stacks, and wherein the second volatile memories, the non-volatile memories and the module controller are stacked in the second memory stacks.

Abstract: A signal receiver circuit includes: a negative voltage applier suitable for applying a negative voltage to a common source node in response to a first clock is at a first logic level; a first sampling transistor coupled between the common source node and a first sampling node to sink a current from the first sampling node to the common source node in response to a first input signal; a second sampling transistor coupled between the common source node and a second sampling node to sink a current from the second sampling node to the common source node in response to a second input signal; an equalizer suitable for equalizing the first sampling node and the second sampling node in response to the first clock is at a second logic level; a precharger suitable for precharging a first output node and a second output node with a pull-up voltage in response to a second clock is at the first logic level, and electrically coupling the first output node and second output node to the second sampling node and the first sam

Abstract: A memory system includes: a memory module including: a first memory device including a first memory and a first memory controller suitable for controlling the first memory to store data; and a second memory device including a second memory and a second memory controller suitable for controlling the second memory to store data; and a processor suitable for executing an operating system (OS) and an application to access a data storage memory through the first and second memory devices.