Abstract: A memory device may include: an active controller configured to output a row active signal in response to a refresh control signal and a row enable signal when an active signal is activated; a refresh controller configured to generate and store a flag bit for controlling a refresh operation in response to a refresh signal, a precharge signal, and a precharge stop signal, and output the row enable signal corresponding to the stored flag bit to the active controller; and a cell array circuit configured to perform a refresh operation in memory cell array areas in response to the row active signal.

Abstract: A microspeaker includes a frame, magnetic circuit, voice coil configured to generate vibration by mutual electromagnetic force with the magnetic circuit, vibration plate configured to vibrate together according to the vibration of the voice coil to generate a sound, and suspension configured to guide a vibration direction of the vibration plate and voice coil. The suspension has a central portion attached to the voice coil, an annular outer circumferential portion formed to be spaced apart from the central portion by a predetermined interval, and a connection portion connecting the central and outer circumferential portions and configured to perform a damping function. The central portion has an outer end having the same height as the connection and outer circumferential portions, an inner end positioned to be higher than the outer end, and a step portion connecting the outer end and inner end. The voice coil is attached to the inner end.

Abstract: A semiconductor system may include a first semiconductor device and a second semiconductor device. The first semiconductor device may output an external strobe signal and external data. The second semiconductor device may extract error information from the external data in synchronization with the external strobe signal during a write operation and outputs the external data and the error information through input/output (I/O) lines during the write operation. The second semiconductor device may correct errors of internal data with the error information loaded on the I/O lines to output the corrected internal data as the external data during a read operation.

Abstract: A memory system includes: a first memory device including a first memory and a first memory controller suitable for controlling the first memory to store data; a second memory device including a second memory and a second memory controller suitable for controlling the second memory to store data; and a processor suitable for executing an operating system (OS) and an application, and accessing data storage memory through the first and second memory devices.

Abstract: A memory circuit may be provided. The memory circuit may include a memory array. The memory circuit may include an input and output path circuit coupled to a probe pad and a bump pad, and may be configured to input and output a signal between an exterior of the memory circuit and the memory array. The memory circuit may include a scanning circuit configured to generate a sensing signal by sensing a signal outputted through the bump pad while performing scanning of at least one of a reference voltage and a test strobe signal.

Abstract: A first data input circuit receives test data from a first pad to generate first input control data for generating cell input data stored in a memory cell array during a first operation period. A first data output circuit receives first output control data generated from cell output data outputted from the memory cell array to output the first output control data to an internal node coupled to a second pad during a second operation period.

Abstract: A semiconductor device may be provided. The semiconductor device may include a first chip and a second chip. The second chip may be configured to receive signals from the first chip to generate a latch address based on the received signals from the first chip.

Abstract: A semiconductor device may include a buffer control signal generation circuit, an input control signal generation circuit and an internal data generation circuit. The buffer control signal generation circuit may be configured to generate a buffer control signal. The buffer control signal may be enabled in synchronization with a point of time that a predetermined section elapses from a point of time that a write command signal is generated. The input control signal generation circuit may be configured to receive a data strobe signal to generate an input control signal, in response to the buffer control signal. The internal data generation circuit may be configured to receive a data signal to generate internal data.

Abstract: A memory device may include: an active controller configured to output a row active signal in response to a refresh control signal and a row enable signal when an active signal is activated; a refresh controller configured to generate and store a flag bit for controlling a refresh operation in response to a refresh signal, a precharge signal, and a precharge stop signal, and output the row enable signal corresponding to the stored flag bit to the active controller; and a cell array circuit configured to perform a refresh operation in memory cell array areas in response to the row active signal.

Abstract: A semiconductor device may be provided. The semiconductor device may include a first chip and a second chip. The second chip may be configured to receive signals from the first chip to generate a latch address based on the received signals from the first chip.

Abstract: A semiconductor device may be provided. The semiconductor device may include a first chip and a second chip. The second chip may be configured to receive signals from the first chip to generate a latch address based on the received signals from the first chip.

Abstract: A memory module may include a plurality of memory groups configured to include a plurality of memory packages, respectively, and input/output data through input/output pins. The memory module may include a control circuit configured to activate one or more of the plurality of memory groups on a basis of an address signal. The memory module may include a multiplexer circuit configured to couple the memory group activated on the basis of the address signal to input/output buses of the memory module.

Abstract: A semiconductor memory apparatus includes an input/output pad, a first data input/output circuit, a first data transfer circuit, a second data transfer circuit, and a test data comparison circuit. The input/output pad may be coupled to an external equipment. The first data input/output circuit may be coupled to the input/output pad. The first data transfer circuit may transfer data output from the first data input/output circuit to a first data storage region in response to a test write signal and transfer data output from the first data storage region to the first data input/output circuit in response to a test read signal. The second data transfer circuit may transfer data output from the first data input/output circuit to a second data storage region in response to the test write signal and transfer data output from the second data storage region to a second data input/output circuit in response to the test read signal.

Abstract: A memory circuit may be provided. The memory circuit may include a memory array. The memory circuit may include an input and output path circuit coupled to a probe pad and a bump pad, and may be configured to input and output a signal between an exterior of the memory circuit and the memory array. The memory circuit may include a scanning circuit configured to generate a sensing signal by sensing a signal outputted through the bump pad while performing scanning of at least one of a reference voltage and a test strobe signal.

Abstract: A memory device may include: an active controller configured to output a row active signal in response to a refresh control signal and a row enable signal when an active signal is activated; a refresh controller configured to generate and store a flag bit for controlling a refresh operation in response to a refresh signal, a precharge signal, and a precharge stop signal, and output the row enable signal corresponding to the stored flag bit to the active controller; and a cell array circuit configured to perform a refresh operation in memory cell array areas in response to the row active signal.

Abstract: A parallel test device and method are disclosed, which relates to a technology for performing a multi-bit parallel test by compressing data. The parallel test device includes: a pad unit through which data input/output (I/O) operations are achieved; a plurality of input buffers configured to activate write data received from the pad unit in response to a buffer enable signal, and output the write data to a global input/output (GIO) line; a plurality of output drivers configured to activate read data received from the global I/O (GIO) line in response to a strobe delay signal, and output the read data to the pad unit; and a test controller configured to activate the buffer enable signal and the strobe delay signal during a test mode in a manner that the read data received from the plurality of output drivers is applied to the plurality of input buffers such that the read data is operated as the write data.

Abstract: A semiconductor system includes a first semiconductor device and a second semiconductor device. The first semiconductor device outputs data, a data strobe signal, an external command, and a clock signal. The second semiconductor device aligns the data in synchronization with the data strobe signal to generate first and second alignment data and latches the first and second alignment data to generate first and second latch data in response to a latch signal which is generated by dividing the data strobe signal.

Abstract: A memory system includes: a memory unit including first and second memories of different types; a processor separated from the memory unit, and suitable for executing an operating system (OS) and an application to access the data storage memory through the memory unit; and a combined memory controller suitable for transferring data between the memory unit and the processor.

Abstract: A memory system includes: a first memory device including a first memory and a first memory controller suitable for controlling the first memory to store data; a second memory device including a second memory and a second memory controller suitable for controlling the second memory to store data; and a processor suitable for executing an operating system (OS) and an application to access a data storage memory through the first and second memory devices.

Abstract: A memory system includes: a first memory device including a first memory and a first memory controller suitable for controlling the first memory to store data; a second memory device including a second memory and a second memory controller suitable for controlling the second memory to store data; and a processor suitable for executing an operating system (OS) and an application to access a data storage memory through the first and second memory devices.