Abstract: A system and method for electrostatic discharge protection. The system includes a first transistor including a first drain, a second transistor including a second drain, and a resistor including a first terminal and a second terminal. The first terminal is coupled to the first drain and the second drain. Additionally, the system includes a third transistor coupled to the second terminal and a protected system. The third transistor includes a first gate, a first dielectric layer located between the first gate and a first substrate, a first source, and a third drain. The protected system includes a fourth transistor, and the fourth transistor includes a second gate, a second dielectric layer located between the second gate and a second substrate, a second source, and a fourth drain.

Abstract: A method includes providing an integrated circuit device comprising a plurality of input parameters and an electrical parameter. A simulation is performed using a simulation model to simulate a plurality of data of the electrical parameter, wherein the plurality of data are generated through simulation from a first plurality of input parameter sets reflecting values of the plurality of input parameters, and wherein the plurality of data is distributed in a range. A first sub-range among the range is selected. All of the plurality of data falling into the first sub-range are selected, and are fitted with corresponding ones of the first input parameter sets to generate a first function, wherein the electrical parameter is expressed as the first function of the plurality of input parameters. The first function is different from functions in the simulation model.

Abstract: A device includes a substrate, and a vertical inductor over the substrate. The vertical inductor includes a plurality of parts formed of metal, wherein each of the parts extends in one of a plurality of planes perpendicular to a major surface of the substrate. Metal lines interconnect neighboring ones of the plurality of parts of the vertical inductor.

Abstract: A method includes simulating characteristics of a first transmission line having a first length, and simulating characteristics of a second transmission line having a second length greater than the first length. A calculation is then performed on the characteristics of the first transmission line and the characteristics of the second transmission line to generate intrinsic characteristics of a third transmission line having a length equal to a difference of the second length and the first length.

Abstract: A system and method for electrostatic discharge protection. The system includes a first transistor coupled to a first system and including a first gate, a first dielectric layer located between the first gate and a first substrate, a first source, and a first drain. The first system includes or is coupled to a core transistor, and the core transistor includes a second gate, a second dielectric layer located between the second gate and a second substrate, a second source, and a second drain. The first transistor is selected from a plurality of transistors, and the plurality of transistors include a plurality of gate regions, a plurality of source regions, and a plurality of drain regions. A plurality of polysilicon regions are disposed in an proximity of at least one of the plurality of gate regions. The plurality of polysilicon regions are separated from the first substrate a plurality of dielectric layers.

Abstract: A device includes a die including a main circuit and a first pad coupled to the main circuit. A work piece including a second pad is bonded to the die. A first plurality of micro-bumps is electrically coupled in series between the first and the second pads. Each of the plurality of micro-bumps includes a first end joining the die and a second end joining the work piece. A micro-bump is bonded to the die and the work piece. The second pad is electrically coupled to the micro-bump.

Abstract: A system and method for transmitting signals is disclosed. An embodiment comprises a balun, such as a Marchand balun, which has a first transformer with a primary coil and a first secondary coil and a second transformer with the primary coil and a second secondary coil. The first secondary coil and the second secondary coil are connected to a ground plane, and the ground plane has slot lines located beneath the separation of the coils in the first transformer and the second transformer. The slot lines may also have fingers.

Abstract: A method includes determining a mapping between model parameters and electrical parameters of integrated circuits. The model parameters are configured to be used by a simulation tool. A set of electrical parameters is provided, and the mapping is used to map the set of electrical parameters to a set of model parameters.

Abstract: A system and method for electrostatic discharge protection. The system includes a first transistor including a first drain, a second transistor including a second drain, and a resistor including a first terminal and a second terminal. The first terminal is coupled to the first drain and the second drain. Additionally, the system includes a third transistor coupled to the second terminal and a protected system. The third transistor includes a first gate, a first dielectric layer located between the first gate and a first substrate, a first source, and a third drain. The protected system includes a fourth transistor, and the fourth transistor includes a second gate, a second dielectric layer located between the second gate and a second substrate, a second source, and a fourth drain.

Abstract: The present disclosure provides systems for predicting semiconductor reliability. In an embodiment a method for predicting the semiconductor reliability includes receiving a degradation parameter input of a semiconductor device and using a degradation equation to determine a plurality of bias dependent slope values for degradation over a short time period according to the degradation parameter input. The plurality of slope values include at least two different slope values for degradation over time. The system accumulates the plurality of slope values and projects the accumulated slope values over a long time period to determine a stress effect for the semiconductor device.

Abstract: Method and system are disclosed for modeling dynamic behavior of a transistor. The method includes representing static behavior of a transistor using a lookup table, selecting an instance of the transistor from the lookup table for modeling dynamic behavior of the transistor, computing a previous state of the instance using a non-quasi static analytical model, computing a variation in channel charge of the instance according to a rate of change in time, computing a current state of the instance using the previous state and the variation in channel charge, computing a modified terminal voltage that includes a dynamic voltage across a parasitic resistance at the terminal of the transistor according to the current state and previous state of the instance, and storing the modified terminal voltage in a memory device for modeling dynamic behavior of the transistor at the current state.

Abstract: A system and method for electrostatic discharge protection. The system includes a first transistor coupled to a first system and including a first gate, a first dielectric layer located between the first gate and a first substrate, a first source, and a first drain. The first system includes or is coupled to a core transistor, and the core transistor includes a second gate, a second dielectric layer located between the second gate and a second substrate, a second source, and a second drain. The first transistor is selected from a plurality of transistors, and the plurality of transistors include a plurality of gate regions, a plurality of source regions, and a plurality of drain regions. A plurality of polysilicon regions are disposed in an proximity of at least one of the plurality of gate regions.

Abstract: A system and method for electrostatic discharge protection. The system includes a first transistor coupled to a first system and including a first gate, a first dielectric layer located between the first gate and a first substrate, a first source, and a first drain. The first system includes or is coupled to a core transistor, and the core transistor includes a second gate, a second dielectric layer located between the second gate and a second substrate, a second source, and a second drain. The first transistor is selected from a plurality of transistors, and the plurality of transistors include a plurality of gate regions, a plurality of source regions, and a plurality of drain regions. Each of the plurality of gate regions intersects a polysilicon region.

Abstract: Method and system are disclosed for modeling dynamic behavior of a transistor. The method includes representing static behavior of a transistor using a lookup table, selecting an instance of the transistor from the lookup table for modeling dynamic behavior of the transistor, computing a previous state of the instance using a non-quasi static analytical model, computing a variation in channel charge of the instance according to a rate of change in time, computing a current state of the instance using the previous state and the variation in channel charge, computing a modified terminal voltage that includes a dynamic voltage across a parasitic resistance at the terminal of the transistor according to the current state and previous state of the instance, and storing the modified terminal voltage in a memory device for modeling dynamic behavior of the transistor at the current state.

Abstract: A system and method for electrostatic discharge protection. The system includes a first transistor coupled to a first system and including a first gate, a first dielectric layer located between the first gate and a first substrate, a first source, and a first drain. The first system includes or is coupled to a core transistor, and the core transistor includes a second gate, a second dielectric layer located between the second gate and a second substrate, a second source, and a second drain. The first transistor is selected from a plurality of transistors, and the plurality of transistors include a plurality of gate regions, a plurality of source regions, and a plurality of drain regions. Each of the plurality of gate regions intersects a polysilicon region.

Abstract: A solution of a first set of equations of the time-varying electrical response of a circuit is determined between pairs of adjacent time points ti and ti+1 based on predicted electrical responses of the devices at time point ti+1 and as a function of the initial temperatures of the circuit devices at time point ti. A solution of a second set of equations of the time-varying temperature responses of devices of the circuit is determined (1) after each iteration of the first set of equations and as a function thereof or (2) at each time point ti+1 and as a function of the solution of the first set of equations at the time point to determine the corresponding temperature response of the circuit. The solutions of the first and second sets of equations at one or more of the points in time are displayed.

Abstract: A vertical npn bipolar transistor formed in a p-type substrate is disclosed. The transistor comprises: a deep n-well formed within the p-type substrate; a buried n+ layer formed within the deep n-well; a p-well formed within the deep n-well and atop the buried n+ layer; an isolation structure surrounding the p-well and extending from the surface of the substrate to below the level of the p-well; a n+ structure formed within the p-well; and a gate formed above the p-well, the gate separated from the substrate by a thin oxide layer, the gate extending over at least a portion of the n+ structure. To turn on the npn bipolar transistor, the gate is pulsed to 0 volts (or lower), generating GIDL current at the n+ structure and flowing into the p-well (as base current). A corresponding vertical gated pnp bipolar transistor can also be formed and operated similarly with reverse polarity of charge carriers and biases.