Abstract: An organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes: a substrate main body; a polycrystalline silicon layer pattern including a polycrystalline active layer formed on the substrate main body and a first capacitor electrode; a gate insulating layer pattern formed on the polycrystalline silicon layer pattern; a first conductive layer pattern including a gate electrode and a second capacitor electrode that are formed on the gate insulating layer pattern; an interlayer insulating layer pattern formed on the first conductive layer pattern; and a second conductive layer pattern including a source electrode, a drain electrode and a pixel electrode that are formed on the interlayer insulating layer pattern. The gate insulating layer pattern is patterned at a same time with any one of the polycrystalline silicon layer pattern and the first conductive layer pattern.

Abstract: A thin film transistor and a manufacturing method thereof are provided. In the manufacturing method of the thin film transistor a semiconductive active layer and a semiconductor passivation layer are sequentially formed such that the semiconductor passivation layer protectively covers the semiconductive active layer. Then the stacked combination of the semiconductive active layer and semiconductor passivation layer are patterned by using a same patterning mask so that formed islands of the semiconductive active layer continue to be protectively covered by formed islands of the semiconductor passivation layer. In one embodiment, the semiconductive active layer is formed of a semiconductive oxide.

Abstract: A display device with the substrate divided into three areas. A semiconductor layer is formed in the first second areas and includes a channel area and source/drain areas; a gate insulating layer formed on the semiconductor layer in an area corresponding to the channel area; and a gate electrode formed on the gate insulating layer. The source/drain electrodes contact the source/drain areas, respectively; a pixel electrode is formed in the same layer but in a third area; an interlayer insulating layer is formed on a whole surface of the substrate including the formed structures; and a gate line is formed on the interlayer insulating layer and is electrically connected to a gate electrode of the first area through a via contact hole of the interlayer insulating layer.

Abstract: An apparatus and method for speaker control in a mobile terminal is provided. The mobile terminal includes a first body having first and second key input units, and a second body having a display unit and swingably connected in at least one of a clockwise and counterclockwise rotation, such that the display can be positioned in a vertical direction in a closed state and in a horizontal direction in an open state, and at least two sound emission holes are formed on an upper surface of the second body for outputting sounds from at least two speakers, based on the open and closed state.

Abstract: The described technology relates generally to a thin film transistor comprising a gate electrode, a semiconductor layer and source/drain electrode, wherein the source/drain electrode is disposed in a range of a region in which the semiconductor layer is formed. Therefore, the present embodiments can provide a thin film transistor in which reliability is excellent because a change amount of threshold voltage is small.

Abstract: A method of manufacturing a thin film transistor and a thin film transistor, the method including sequentially forming a gate insulating layer, an amorphous silicon layer and an insulating layer on an entire top surface of a substrate having a gate electrode; patterning the insulating layer to form an etch stopper; and patterning the amorphous silicon layer to form a semiconductor layer.

Abstract: In an organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes a substrate main body; an insulation layer pattern formed on the substrate main body, and including a first thickness layer and a second thickness layer thinner than the first thickness layer; a metal catalyst that is scattered on the first thickness layer of the insulation layer pattern; and a polycrystalline semiconductor layer formed on the insulation layer pattern, and divided into a first crystal area corresponding to the first thickness layer and to a portion of the second thickness layer adjacent to the first thickness layer and a second crystal area corresponding to the remaining part of the second thickness layer. The first crystal area of the polycrystalline semiconductor layer is crystallized through the metal catalyst, and the second crystal area of the polycrystalline semiconductor layer is solid phase crystallized.

Abstract: An organic light emitting diode display device and a method of manufacturing thereof, the device including a substrate, the substrate including a pixel part and a circuit part; a first semiconductor layer and a second semiconductor layer on the pixel part of the substrate; a gate insulating layer on an entire surface of the substrate; gate electrodes on the gate insulating layer, the gate electrodes corresponding to the first semiconductor layer and the second semiconductor layer, respectively; source/drain electrodes insulated from the gate electrodes, the source/drain electrodes being connected to the first and second semiconductor layers, respectively; a first electrode connected to the source/drain electrodes of the first semiconductor layer; an organic layer on the first electrode; a second layer on the organic layer; and a metal catalyst layer under the first semiconductor layer.

Abstract: An organic light emitting diode (OLED) display device and a method of fabricating the same are disclosed.

Abstract: A thin film transistor (TFT) and an organic light emitting display device having the same are disclosed. In one embodiment, a TFT includes a gate electrode formed on a substrate. A gate insulating layer is formed on the substrate having the gate electrode. An active layer is formed on the gate insulating layer. A source electrode is formed over the active layer. A drain electrode is formed to substantially surround at least three surfaces of the source electrode on the active layer.

Abstract: A thin film transistor and a manufacturing method thereof are provided. In the manufacturing method of the thin film transistor a semiconductive active layer and a semiconductor passivation layer are sequentially formed such that the semiconductor passivation layer protectively covers the semiconductive active layer. Then the stacked combination of the semiconductive active layer and semiconductor passivation layer are patterned by using a same patterning mask so that formed islands of the semiconductive active layer continue to be protectively covered by formed islands of the semiconductor passivation layer. In one embodiment, the semiconductive active layer is formed of a semiconductive oxide.

Abstract: An organic light emitting diode display includes a substrate. A control electrode is on the substrate. A gate insulating film covers the control electrode. An input electrode and an output electrode are on the gate insulating film and face each other. An oxide semiconductor is between the input electrode and the output electrode and on the control electrode. A pixel electrode is on portions of the edges of the output electrode and is electrically connected. An organic light emitting member is on the pixel electrode. A common electrode is on the organic light emitting member. The oxide semiconductor and the pixel electrode may be of the same layer.

Abstract: A mobile terminal is provided that includes front and rear cases, an intermediate case between the front and rear cases, and a printed circuit board between the intermediate cases and at least one of the front and rear cases. A shielding member having a first width, length and thickness, and being formed of a metal. Non-conductive material may have a second thickness attached to at least two edges of the shielding member.

Abstract: The present invention relates to a ferroelectric ceramic compound having the composition of the following formula: s[L]?x[P]y[M]z[N]p[T], a ferroelectric ceramic single crystal, and preparation processes thereof. The ferroelectric ceramic compound and the single crystal according to the present invention are relaxor ferroelectrics having high piezoelectricity, a high electromechanical coefficient and a high electrooptical coefficient, and are useful for manufacturing tunable filters for radio communication, optical communication devices, surface acoustic wave devices, and the like. Particularly, the process of preparing the single crystal according to the present invention enables preparation of a single crystal having a diameter of 5 cm or greater and a single crystal wafer with uniform composition.

Abstract: An apparatus and method for speaker control in a mobile terminal is provided. The mobile terminal includes a first body having first and second key input units, and a second body having a display unit and swingably connected in at least one of a clockwise and counterclockwise rotation, such that the display can be positioned in a vertical direction in a closed state and in a horizontal direction in an open state, and at least two sound emission holes are formed on an upper surface of the second body for outputting sounds from at least two speakers, based on the open and closed state.

Abstract: A variable steering rack system includes: a movable steering rack bar; a case with a through-hole through which the steering rack bar penetrates; a stopper with a second through-hole through which the steering rack bar penetrates, disposed in the first through-hole and rotatable through a predetermined angle, and regulating a displacement of the steering rack bar as much as the thickness thereof; a stopper housing connected to the case such that the stopper is disposed therebetween and defining a groove; an intermediate gear with a bar on a surface thereof inserted into the groove of the stopper housing, and rotating the stopper; and an operating portion operating the intermediate gear, wherein the groove of the stopper housing is configured to limit a movement of the bar such that the stopper rotates only as much as the predetermined angle.

Abstract: The present invention relates to a ferroelectric ceramic compound having the composition of the following formula: s[L]-x[P]y[M]z[N]p[T], a ferroelectric ceramic single crystal, and preparation processes thereof. The ferroelectric ceramic compound and the single crystal according to the present invention are relaxor ferroelectrics having high piezoelectricity, a high electromechanical coefficient and a high electrooptical coefficient, and are useful for manufacturing tunable filters for radio communication, optical communication devices, surface acoustic wave devices, and the like. Particularly, the process of preparing the single crystal according to the present invention enables preparation of a single crystal having a diameter of 5 cm or greater and a single crystal wafer with uniform composition.

Abstract: The invention relates to an electronic age verification device that reads data stored on a data carrier or readable medium, such as a driver's license or identification card, then calculates and displays information such as the license or cardholder's age and the expiration status of the license or identification card.