Abstract: Provided is an organic light emitting display apparatus in which process efficiency and contrast are increased. The organic light emitting display apparatus includes a substrate, a display unit that is formed on the substrate and includes an organic light emitting device, an encapsulation layer that is formed on the display unit so as to encapsulate the display unit, a color filter layer that is formed on the encapsulation layer, a protection layer that is formed on the color filter layer, and a black matrix that is formed on the protection layer. The black matrix is aligned not to overlap the color filter layer.

Abstract: An OLED display includes a substrate on which OLEDs are formed, a TFE layer formed on the substrate so as to cover the OLEDs, and absorbers disposed at a distance from each other and preventing or inhibiting penetration of external foreign materials.

Abstract: An organic light-emitting device including an anode, a cathode, an emission layer interposed between the anode and the cathode, and at least one of the hole injecting layer and the hole transporting layer interposed between the anode and the emission layer, wherein the at least one of the hole injecting layer and the hole transporting layer includes a host material, and a dopant material as an electron acceptor, wherein the dopant material has an electron affinity greater than that of the host material by at least 0.1 eV.

Abstract: An organic thin film transistor that has good adhesiveness and good contact resistance as well as allows ohmic contact between an organic semiconductor layer and a source electrode and a drain electrode, and its manufacturing method. There is also provided a flat panel display device using the organic thin film transistor. The organic thin film transistor includes a source electrode, a drain electrode, an organic semiconductor layer, a gate insulating layer, and a gate electrode formed on a substrate, and a carrier relay layer including conductive polymer material formed at least between the organic semiconductor layer and the source electrode or the organic semiconductor layer and the drain electrode.

Abstract: An organic light emitting device (OLED) including: a substrate; a first electrode; a second electrode facing the first electrode; a first blue light emitting layer, a green light emitting layer, a red light emitting layer, and a second blue light emitting layer all interposed between the first electrode and the second electrode; and a color filter disposed in a path of light emitted from the light emitting layers, wherein the first blue light emitting layer includes a deep blue dopant, and the second blue light emitting layer includes a sky blue dopant.

Abstract: The present invention relates to a full color organic electroluminescent device and a method for fabricating the same and provides a full color organic electroluminescent device. The invention reduces misalignment errors caused by fine patterning of the emitting layer by reducing the steps of the fine patterning process. In particular, the blue emitting layer functions as a hole inhibition layer which results in superior color purity and improved stability for the color organic electroluminescent device. The use of such a blue emitting layer also reduces the manufacturing steps. The device comprises a substrate; a first electrode pattern formed on the substrate; a red emitting layer formed by patterning a red emitting material on a red pixel region of the first electrode pattern and a green emitting layer formed by patterning a green emitting material on a green pixel region of the first electrode pattern.

Abstract: An organic thin film transistor that can reduce contact resistance between source and drain electrodes and an organic semiconductor layer and can be readily manufactured, a flat panel display apparatus utilizing the organic thin film transistor, and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes: a substrate; a source electrode and a drain electrode disposed on the gate insulating film; a conductive polymer layer disposed to cover at least a portion of each of source and drain electrodes; a hydrophobic material layer disposed on the substrate and the source and drain electrodes except regions where the conductive polymer layer are formed; an organic semiconductor layer electrically connected to the source and drain electrodes; a gate insulating film disposed to cover the organic semiconductor layer; and a gate electrode disposed on the gate insulating film.

Abstract: An organic thin film transistor (TFT), a method of manufacturing the organic TFT, and a flat display apparatus having the organic TFT are provided. The organic TFT has a gate insulating layer with openings filled with a conductive material, thereby preventing short circuits from occurring between channels connecting the source and drain lines to the organic semiconductor layer. The organic TFT includes a substrate including a source line, a drain line, and a gate electrode. The organic TFT further includes a gate insulating layer formed on the source and drain lines and on the gate electrode. The gate insulating layer has openings exposing the source and drain lines, which openings are filled with a conductive material. The organic TFT also includes an organic semiconductor layer electrically connected to the conductive material.

Abstract: An organic thin film transistor that has good adhesiveness and good contact resistance as well as allows ohmic contact between an organic semiconductor layer and a source electrode and a drain electrode, and its manufacturing method. There is also provided a flat panel display device using the organic thin film transistor. The organic thin film transistor includes a source electrode, a drain electrode, an organic semiconductor layer, a gate insulating layer, and a gate electrode formed on a substrate, and a carrier relay layer including conductive polymer material formed at least between the organic semiconductor layer and the source electrode or the organic semiconductor layer and the drain electrode.

Abstract: An organic thin film transistor, a flat display device including the same, and a method of manufacturing the organic thin film transistor are disclosed. In one embodiment, the organic thin film transistor includes: i) a substrate, ii) a gate electrode disposed on the substrate, iii) a gate insulation film disposed on the gate electrode, iv) a source electrode and a drain electrode spaced from each other and disposed on the gate insulation film, v) an organic semiconductor layer contacting the source electrode and the drain electrode and having an edge to be distinguished from an adjacent organic thin film transistor, and vi) a cantilever layer disposed to cover the organic semiconductor layer, contacting a portion of a layer which is disposed in or under the organic semiconductor layer, and is exposed to the outside of the edge of the organic semiconductor layer.

Abstract: An organic TFT that has an improved contact between source and drain electrodes and an organic semiconductor layer, a method of manufacturing the same, and an organic light emitting display device having the organic TFT are disclosed. The organic TFT includes a substrate, a gate electrode disposed on the substrate, a gate insulating film covering the gate electrode, a source electrode and a drain electrode disposed on the gate insulating film, a peel-off preventive layer disposed on the gate insulating film to contact at least a portion of end surfaces of the source and drain electrodes, and an organic semiconductor layer that contacts the source and drain electrodes.

Abstract: The OLED display device includes a substrate, a first electrode located on the substrate, a pixel defining layer located on the first electrode to expose a part of the first electrode, a fluorine-based polymer layer located on the pixel defining layer, an organic layer located on the first electrode, and a second electrode located on the entire surface of the substrate. The method of manufacturing the OLED display device includes forming a first electrode on a substrate, forming a pixel defining layer on the first electrode, forming a fluorine-based polymer layer on the pixel defining layer, patterning the fluorine-based polymer layer and the pixel defining layer by laser ablation to open a part of the first electrode, forming an organic layer on the opened first electrode, and forming a second electrode on the entire surface of the substrate.

Abstract: A full color organic electroluminescent device and a method for fabricating the same reduces misalignment errors caused by fine patterning of the emitting layer by reducing the steps of the fine patterning process. In particular, the blue emitting layer functions as a hole inhibition layer which results in superior color purity and improved stability for the color organic electroluminescent device. The use of such a blue emitting layer also reduces the manufacturing steps. The device comprises a substrate; a first electrode pattern formed on the substrate; a red emitting layer formed by patterning a red emitting material on a red pixel region of the first electrode pattern and a green emitting layer formed by patterning a green emitting material on a green pixel region of the first electrode pattern. A blue emitting layer is applied over the entire substrate, over the upper parts of the red and green emitting layers and a second electrode is formed on an upper part of the blue emitting layer.

Abstract: A thin film transistor having a transformed region that provides the same result as patterning a semiconductor layer, a flat panel display having the thin film transistor and a method for manufacturing the thin film transistor and the flat panel display are disclosed. The thin film structure includes a gate electrode, a source and a drain electrode, each insulated from the gate electrode and an organic semiconductor layer coupled to the source electrode and the drain electrode. The organic semiconductor layer includes the transformed region having a crystal structure distinguished from crystal structures of regions around the channel region.

Abstract: Provided is an organic thin film transistor that can prevents damage to source and drain electrodes when patterning an organic semiconductor layer, and a method of manufacturing an organic light emitting display device having the organic thin film transistor. The organic thin film transistor includes a source electrode and a drain electrode; an organic semiconductor layer that contacts the source and drain electrodes, and has an ashed surface except a channel area between the source and drain electrodes; a gate electrode insulated from the source electrode, the drain electrode, and the organic semiconductor layer; and a gate insulating film that insulates the gate electrode from the source electrode, the drain electrode, and the organic semiconductor layer.

Abstract: In a thin film transistor and a flat panel display device having the same, cross-talk is minimized. The flat panel display device includes a substrate, a first thin film transistor, a second thin film transistor, and a display element. The first thin film transistor includes: a first gate electrode formed on the substrate; a first electrode insulated from the first gate electrode; a second electrode insulated from the first gate electrode and surrounding the first electrode in the same plane; and a first semiconductor layer insulated from the first gate electrode and contacting the first electrode and the second electrode.

Abstract: An organic thin film transistor that can reduce contact resistance between source and drain electrodes and an organic semiconductor layer and can be readily manufactured, a flat panel display apparatus utilizing the organic thin film transistor, and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes: a substrate; a source electrode and a drain electrode disposed on the gate insulating film; a conductive polymer layer disposed to cover at least a portion of each of source and drain electrodes; a hydrophobic material layer disposed on the substrate and the source and drain electrodes except regions where the conductive polymer layer are formed; an organic semiconductor layer electrically connected to the source and drain electrodes; a gate insulating film disposed to cover the organic semiconductor layer; and a gate electrode disposed on the gate insulating film.

Abstract: An organic thin film transistor (OTFT) having a patterned organic semiconductor layer on top of an electrode wiring layer. In order to avoid damage to the underlying electrode wiring layer, the organic semiconductor layer is patterned so that none of the organic semiconductor layer is removed off the electrode wiring layer. The patterned organic semiconductor layer completely covers all of the underlying electrode wiring layer. The OTFT includes a gate electrode, source and drain electrodes insulated from the gate electrode and an organic semiconductor layer which is insulated from the gate electrode and is in contact with the source and drain electrodes, wherein the organic semiconductor layer completely covers the source and drain electrodes. In addition, an organic light emitting display device includes more than one OTFT as well as an organic light-emitting element electrically connected to the electrical conductor.

Abstract: A donor substrate for laser transfer comprises: a base film; a light-to-heat conversion layer formed on the base film; and a transfer layer formed of an organic material on the light-to-heat conversion layer. The transfer layer contains a thermosetting electroluminescent material, and an organic electroluminescence display device is manufactured using the same. Thus, R, G and B emission layers are simply formed with a fine pattern by a thermal curing process after laser transfer. As a result, the emission layers are not damaged, and the manufacturing cost of a full-color organic electroluminescence display device is reduced due to employment of a simplified mask process. The donor substrate is advantageous to use in the manufacture of a large-sized organic electroluminescence display device.

Abstract: Provided are a thin film transistor, a method for preparing the same and a flat panel display employing the same. The thin film transistor includes a gate electrode, source and drain electrodes insulated from the gate electrode, a semiconductor layer insulated from the gate electrode and electrically connected to the source and drain electrodes, an insulating layer, and a carrier blocking layer interposed between the semiconductor layer and the insulating layer and preventing electrons or holes moving through semiconductor layer from being trapped in the insulating layer. Since the thin film transistor is constructed such that the carrier blocking layer is interposed between the semiconductor layer and the insulating layer, the electrons or holes injected into the semiconductor layer can be prevented from being trapped in the insulating layer, thereby suppressing hysteresis characteristic. In addition, a reliable flat panel display device can be manufactured using the thin film transistor.