Abstract: A method of manufacturing an organic light emitting device by which a pixel defining layer can be easily formed. The method includes: forming a first electrode on a substrate; forming a photoresist layer to cover the first electrode; patterning the photoresist layer and forming a blocking layer so that the blocking layer is on a side of the first electrode opposite to a side facing the substrate; forming a pixel defining layer on the substrate to cover side ends of the first electrode; removing the blocking layer and exposing the side of the first electrode contacting the blocking layer; forming an intermediate layer including an organic light emitting layer on the side of the first electrode that is exposed by removing the blocking layer; and forming a second electrode on the intermediate layer.

Abstract: An organic electroluminescent display device having an organic thin film transistor (OTFT) and a method of fabricating the same is disclosed. The display device can maintain an insulation property of a TFT and concurrently, ensure a sufficient capacitance by using an organic insulating layer for a gate insulating layer and using an inorganic insulating layer for a capacitor dielectric. In one embodiment, the organic electroluminescent display device includes a substrate having a capacitor region and a transistor region, a TFT formed in the transistor region of the substrate, and having a gate electrode, an organic semiconductor layer, a source electrode, and a drain electrode, a capacitor formed in the capacitor region of the substrate, and having a lower electrode and an upper electrode, and a display element connected to one of source/drain electrodes of the TFT.

Abstract: A top emission type organic light emitting display apparatus that can improve contrast without using a black matrix and can simply the manufacture of a color filter. The top emission type organic light emitting display apparatus includes a substrate, an organic light emitting device arranged on the substrate and including a first electrode layer and a second electrode layer arranged opposite to each other and an organic light emitting layer arranged between the first electrode layer and the second electrode layer, an encapsulating member arranged to encapsulate the organic light emitting device, a polarizing film arranged on the encapsulating member and a color filter arranged between the encapsulating member and the polarizing film, the color filter being arranged directly on the polarizing film.

Abstract: An organic thin film transistor includes a substrate, a gate electrode, a gate insulating layer, a first electrode, and a second electrode disposed on the substrate, a first layer disposed on the substrate, the first layer being photosensitive, a second layer disposed on the first layer, the second layer being hydrophobic, an opening defined in the first and second layers, the opening corresponding to the gate electrode, and a hydrophilic organic semiconductor disposed in the opening.

Abstract: A poly(para-phenylenevinylene) (PPV) compound for forming a buffer layer of a thin film transistor represented by where R is a C1-C20 silyl group substituted with cyclohexyl or phenyl, m is an integer from 2 to 4, and n is an integer from 1 to 3,000; a composition for forming a buffer layer of a thin film transistor that is used to form the compound represented by formula 1 and includes a halo precursor polymer, a photobase generator, and a solvent; a thin film transistor including a buffer layer which is manufactured using the PPV compound; and a flat panel display including the thin film transistor. A patterned buffer layer can be formed under an organic semiconductor layer of an organic TFT by photolithography patterning using the silicon-containing PPV precursor. Accordingly, the alignment of the organic semiconductor layer of the organic TFT can be improved, and thereby, the characteristics of the organic TFT can be improved.

Abstract: Provided is a method of manufacturing an organic light emitting display device in which a laser beam is used. The method includes forming an organic light emitting unit on a substrate; forming a sealing unit that seals the organic light emitting unit; forming an protective film which is opaque on the sealing unit to protect the organic light emitting unit or the sealing unit by blocking the transmission of the laser beam; forming an optical pattern on the opaque protective film using the laser beam; and forming a transparent film from the opaque protective film by oxidizing the opaque protective film.

Abstract: An organic thin film transistor, a method of fabricating the same, and an organic light emitting diode (OLED) display device having the same. The organic thin film transistor includes a substrate, a buffer layer disposed on the substrate, a gate electrode disposed on the buffer layer, a gate insulating layer disposed on the gate electrode, an organic semiconductor layer disposed on the gate insulating layer, source and drain electrodes disposed on the gate insulating layer and electrically connected with the organic semiconductor layer, and a passivation layer formed of a polymer composite and disposed on the organic semiconductor layer.

Abstract: Provided is a method of patterning an organic thin film which can prevent surface damage of an organic semiconductor layer. Also, an organic thin film transistor that can reduce an off-current and can prevent surface damage of the organic semiconductor layer and a method of manufacturing the organic thin film transistor, and an organic electroluminescence display device having the organic thin film transistor are provided. The method of patterning the organic thin film includes forming the organic thin film on a substrate, selectively printing a mask material on a portion of the organic thin film, dry etching an exposed portion of the organic thin film using the mask material, and removing the mask material.

Abstract: Provided is a high-quality sign board including an organic light emitting device (OLED) which can be easily adapted to various designs applied by users to the sign board. The sign board includes a substrate, a plurality of first conductive lines disposed on the substrate, a plurality of pixel electrodes electrically connected with the first conductive lines, an intermediate layer comprising a light emitting layer disposed on the pixel electrodes, and a face electrode disposed on the intermediate layer. In another embodiment, the sign board further includes a plurality of second conductive lines, each of which connects at least two of the first conductive lines to each other. In still another embodiment, the plurality of pixel electrodes includes a plurality of first pixel electrodes electrically connected with the first conductive lines, and a plurality of second pixel electrodes that are not electrically connected with the first conductive lines.

Abstract: A method of forming an organic thin film transistor is disclosed. The method includes forming source and drain electrodes on a substrate; forming an insulating layer covering the source and drain electrodes; first surface-treating the insulating layer so that the insulating layer has a hydrophobic surface; forming an opening that exposes facing portions of the source and drain electrodes in the first surface-treated insulating layer; forming an organic semiconductor layer and a gate insulating layer in the opening; second surface-treating the first surface-treated insulating layer so that the insulating layer has a hydrophilic surface; and forming a gate electrode overlapping at least a portion of the source and drain electrodes, an organic thin film transistor, and a flat panel display device including the organic thin film transistor.

Abstract: A method of manufacturing a thin film transistor is capable of enhancing pattern precision of an organic semiconductor layer and simplifying a patterning process. The method includes forming an organic insulating film on a substrate and forming a bank having the first and second concave portions and a third concave portion in the organic insulating film, the third concave portion being formed on the first and second concave portions. The method further includes forming a source electrode and a drain electrode in the first and second concave portions and forming an active layer in the third concave portion, the active layer contacting the source electrode and the drain electrode.

Abstract: A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.

Abstract: An organic light emitting diode (OLED) display device and a method of fabricating the same. The OLED display device includes a substrate, a thin film transistor on the substrate and including a semiconductor layer, a gate electrode, a gate insulating layer, a source electrode and a drain electrode. A passivation layer is on an entire surface of the substrate including the thin film transistor. A planarization layer is on the passivation layer. A first electrode is on the planarization layer and electrically coupled to any one of the source electrode or the drain electrode. A metal mixture layer is on substantially the entire surface of the substrate and includes a conductive region and a non-conductive region. An organic emitting layer and a second electrode both are on the metal mixture layer.

Abstract: Organic TFTs having uniform characteristics and a flat panel display having the organic TFT, wherein the organic TFTs include an organic semiconductor layer formed by spin coating are disclosed. One embodiment of the organic TFT includes: a substrate, a gate electrode disposed on the substrate, a gate insulating film covering the gate electrode, an organic semiconductor layer disposed on the gate insulating film, and a source electrode and a drain electrode that contact the organic semiconductor layer, wherein a plurality of protrusion parts is formed on the gate insulating film and the protrusion parts extend toward the drain electrode from the source electrode.

Abstract: A flexible flat panel display where nanoparticles are used for the active layer of the TFTs and the substrate is flexible and can be manufactured at room temperature, a flat panel display device having the same, a method of manufacturing a TFT, a method of manufacturing a flat panel display device, and a method of manufacturing a donor sheet. In making the TFTs in the display, a donor sheet is used to transfer the nanoparticles from the sheet to the substrate. The thin film transistor is placed on a substrate and includes a channel region which has at least one P-type or N-type nanoparticle arranged in a lengthwise direction, wherein the lengthwise direction of the P-type or N-type nanoparticles is parallel to a P-type or an N-type nanoparticle line partitioned off on the substrate.

Abstract: The invention provides an improved thin film transistor (TFT) that can be formed at room temperature and has an improved contact resistance between an active layer and source and drain electrodes, and further provides a flat display device using such a TFT. The TFT includes an active layer including at least two nano particle layers which include at least one nano particle type, an insulating layer interposed between the nano particle layers, a gate electrode insulated from the active layer, and source and drain electrodes formed in respective channels, the source and drain electrodes contact one of the nano particle layers of the active layer. The structure of the TFT facilitates the simultaneous manufacturing of a plurality of different types of TFTs.

Abstract: Provided is a method of patterning an organic thin film which can prevent surface damage of an organic semiconductor layer. Also, an organic thin film transistor that can reduce an off-current and can prevent surface damage of the organic semiconductor layer and a method of manufacturing the organic thin film transistor, and an organic electroluminescence display device having the organic thin film transistor are provided. The method of patterning the organic thin film includes forming the organic thin film on a substrate, selectively printing a mask material on a portion of the organic thin film, dry etching an exposed portion of the organic thin film using the mask material, and removing the mask material.

Abstract: A flat panel display apparatus includes a gate insulating layer having openings which define pixels. The flat panel display apparatus includes: a substrate; a source electrode and a drain electrode formed on the substrate; a semiconductor layer contacting the source electrode and the drain electrode; a gate formed on the substrate; an insulating layer formed between the source and drain electrodes and the gate, and including an opening; and a pixel electrode partially exposed by the opening of the insulating layer. The insulating layer acts as a gate insulating layer and a pixel definition layer defining the pixel electrode.

Abstract: An organic thin film transistor that prevents the surface of an organic semiconductor layer from being damaged and reduces turn-off current, a method of fabricating the same, and an organic light-emitting device incorporating the organic thin film transistor. The organic thin film transistor includes a substrate, source and drain electrodes arranged on the substrate, a semiconductor layer contacting the source and drain electrodes and comprising a channel region, a protective film arranged on the semiconductor layer and having a same pattern as the semiconductor layer, the protective film comprising a laser-absorbing material, a gate insulating film arranged between the gate and the source and drain electrodes, a gate electrode arranged on the gate insulating film and a separation pattern arranged within the semiconductor layer and within the protective film, the separation pattern adapted to define the channel region of the semiconductor layer.

Abstract: A Thin Film Transistor (TFT) that can reduce leakage current and can prevent crosstalk between adjacent TFTs includes: a substrate; a gate electrode disposed on the substrate; a source electrode and a drain electrode separated from each other and insulated from the gate electrode; and a semiconductor layer which is insulated from the gate electrode, contacts each of the source and drain electrodes, and has grooves that separate at least a region of the semiconductor layer between the source and drain electrodes from the adjacent TFT.