Abstract: A method for operating a memory device with pseudo double clock signals comprises the steps of: generating an even clock signal and an odd clock signal, wherein the clock rates of both the even clock signal and the odd clock signal are half that of the input clock signal, and the even clock signal is the inverse signal of the odd clock signal; if the logic level of the even clock signal is 1 when receiving a trigger of a control signal, applying the even clock signal to a memory device; and if the logic level of the odd clock signal is 1 when receiving another trigger of the control signal, applying the odd clock signal to the memory device.

Abstract: An adaptive equalization apparatus is provided. The adaptive equalization apparatus includes an equalizer, a monitor circuit, and a control circuit. The equalizer receives a first signal, and equalizes the first signal according to an equalization parameter setting to thereby generate a second signal. The monitor circuit is electrically connected to the equalizer, and monitors edges of the second signal in a real-time manner to thereby generate a detection result. The control logic is electrically connected to the equalizer, and adaptively adjusts the equalization parameter setting according to the detection result.

Abstract: A memory device is provided. The memory device includes a plurality of memory array banks, a bus, a data buffer, and four data paths. The data buffer provides data from the memory array banks to an external node. The first data path includes a first compression module for compressing the data from the memory array banks to the bus. The second data path transmits the data from the memory array banks to the bus. The third data path includes a second compression module for compressing data from the bus to the data buffer. The fourth data path transmits the data from the bus to the data buffer.

Abstract: A semiconductor memory device comprises a plurality of memory cells, a bit line sense amplifier, a local sense amplifier, and a sense amplifier. The memory cells are connected between a word line and a bit line pair, and the bit line sense amplifier is configured to amplify voltages of data from the bit line pair and then transmits the data to a local data line pair. The local sense amplifier is configured to amplify voltages of the data from the local data line pair and transmit the data to a global data line pair in response to first and second control signals, and the sense amplifier is configured to amplify the voltages of the data from the global data line pair and transmit the data to an input/output line pair during a read operation. The local sense amplifier comprises a first read circuit, a second read circuit, and a write circuit, and when the memory device performs the read operation, the data is transmitted from the first read circuit to the write circuit via the second read circuit.

Abstract: A dynamic RAM which includes a first inverter, a second inverter, a sense amplifier, a first pair of switches, a pair of bit lines, and a dynamic RAM cell. The first inverter receives a first driving signal. A power end of the first inverter is coupled to a first voltage source. The second inverter receives a second driving signal output from the first inverter. A power end of the second inverter is coupled to a second voltage source. The sense amplifier senses and amplifies a voltage difference between a first sensing signal and a second sensing signal. A power end of the sense amplifier is coupled to a third voltage source, wherein a voltage value of the second voltage source is between a voltage value of the first voltage source and a voltage value of the third voltage source.

Abstract: The invention provides a test circuit for n input/output arrays. Each of the n input/output arrays has M pairs of input/output. The test circuit includes M write drivers and M comparing circuits. The ith write driver provides an ith test signal to the ith inputs of all of the n input/output arrays, and 1?i?M. The jth comparing circuit determines if jth output signals of all of the n input/output arrays are the same, and outputs a jth comparing result correspondingly, and 1?j?M. The invention also provides a method of testing n input/output arrays. The invention also provides a storage device.

Abstract: A duty cycle correction circuit comprises first and second pulse generators, a clock dividing unit, a detecting unit, and a pulse width control unit. The first pulse generator is configured to generate a first edge of a first pulse signal in synchronization with a first edge of a first clock signal, and the second pulse generator is configured to generate a first edge of a second pulse signal in synchronization with a second edge of the first pulse signal. The clock dividing unit is configured to generate a second clock signal by dividing the frequency of the first clock signal. The detecting unit is configured to generate a detecting signal according to the second clock signal and a time interval between the first edge of the first pulse signal and a second edge of the second pulse signal. In particular, pulse widths of the first and second pulse signals are the same and are adjustable according to a control signal from the pulse width control unit.

Abstract: A method comprises simultaneously writing a test bit to a plurality of memory cells in the selected sections of a memory array corresponding to column address signals; individually and successively reading output bits from the memory cells in one of the selected sections of a designated row of the memory array corresponding to column address signals and row address signals; and error-checking the output bits with the test bit, wherein the memory array comprises the plurality of memory cells arranged in rows and columns and the memory cells of each row are divided into a plurality of sections.

Abstract: A duty cycle correction circuit comprises first and second pulse generators, a clock dividing unit, a detecting unit, and a pulse width control unit. The first pulse generator is configured to generate a first edge of a first pulse signal in synchronization with a first edge of a first clock signal, and the second pulse generator is configured to generate a first edge of a second pulse signal in synchronization with a second edge of the first pulse signal. The clock dividing unit is configured to generate a second clock signal by dividing the frequency of the first clock signal. The detecting unit is configured to generate a detecting signal according to the second clock signal and a time interval between the first edge of the first pulse signal and a second edge of the second pulse signal. In particular, pulse widths of the first and second pulse signals are the same and are adjustable according to a control signal from the pulse width control unit.

Abstract: A semiconductor memory device comprises a plurality of memory cells, a bit line sense amplifier, a local sense amplifier, and a sense amplifier. The memory cells are connected between a word line and a bit line pair, and the bit line sense amplifier is configured to amplify voltages of data from the bit line pair and then transmits the data to a local data line pair. The local sense amplifier is configured to amplify voltages of the data from the local data line pair and transmit the data to a global data line pair in response to first and second control signals, and the sense amplifier is configured to amplify the voltages of the data from the global data line pair and transmit the data to an input/output line pair during a read operation. The local sense amplifier comprises a first read circuit, a second read circuit, and a write circuit, and when the memory device performs the read operation, the data is transmitted from the first read circuit to the write circuit via the second read circuit.

Abstract: A main word line driving circuit for driving word lines in a memory device comprises first and second level shifting units and an inverting unit. The first level shifting unit is configured to convert a decode signal into a first operative signal, and the second level shifting unit is configured to convert the decode signal into a second operative signal. The inverting unit is configured to receive the first and second operative signals. A supply voltage of the first level shifting unit is selectively switched to a first bias voltage when the plurality of word lines are selected or partially selected and switched the output voltage to a second bias voltage when the plurality of word lines are deselected.

Abstract: A method for operating a memory device with pseudo double clock signals comprises the steps of: generating an even clock signal and an odd clock signal, wherein the clock rates of both the even clock signal and the odd clock signal are half that of the input clock signal, and the even clock signal is the inverse signal of the odd clock signal; if the logic level of the even clock signal is 1 when receiving a trigger of a control signal, applying the even clock signal to a memory device; and if the logic level of the odd clock signal is 1 when receiving another trigger of the control signal, applying the odd clock signal to the memory device.

Abstract: A memory device is provided. The memory device includes a plurality of memory array banks, a bus, a data buffer, and four data paths. The data buffer provides data from the memory array banks to an external node. The first data path includes a first compression module for compressing the data from the memory array banks to the bus. The second data path transmits the data from the memory array banks to the bus. The third data path includes a second compression module for compressing data from the bus to the data buffer. The fourth data path transmits the data from the bus to the data buffer.

Abstract: A multifunctional output driver capable of transmitting signals of different interfaces in different modes is provided, in which first and second current sources are provided, and first to fourth switching devices are coupled between the first and second current sources, and the first and second current source and the first to the fourth switching devices act as a current steering circuit. In a first transmission mode, the first and second switching devices are turned off, and the third and fourth switching devices and the first current source act as a current mode logic circuit to provide an output signal compatible with a first transmission interface according to an input signal from a pre-driver. In a second transmission mode, the current steering circuit outputs an output signal compatible with a second transmission interface according to the input signal from the pre-driver.

Abstract: A delay circuit has: an inverting receiver with a resistive element, the inverting receiver having an input node for receiving an input signal and an output node coupled to the resistive element; a capacitive element, coupled to the output node of the inverting receiver and the resistive element; a first transistor, having lower turned ON voltage at higher temperature; a second transistor, used for generating a rail to rail signals on a terminal of the first transistor; and an output inverter, having an input node coupled to the first transistor and an output node for outputting an output signal of the delay circuit. Further, a third transistor is used for enhancing pulling low of the output signal of the delay circuit.

Abstract: A multifunctional output driver capable of transmitting signals of different interfaces in different modes is provided, in which first and second current sources are provided, and first to fourth switching devices are coupled between the first and second current sources, and the first and second current source and the first to the fourth switching devices act as a current steering circuit. In a first transmission mode, the first and second switching devices are turned off, and the third and fourth switching devices and the first current source act as a current mode logic circuit to provide an output signal compatible with a first transmission interface according to an input signal from a pre-driver. In a second transmission mode, the current steering circuit outputs an output signal compatible with a second transmission interface according to the input signal from the pre-driver.

Abstract: A transmitter circuit, a receiver circuit and an interface switching module for SATA or SAS interface are provided. The invention uses transistors as elements with different impedance and also provides impedance modulating method in coordination with the exterior circuit and the layout design so as to develop an auto-switching mechanism between SATA and SAS interfaces, thereby integrating two transmission interfaces in a single system.

Abstract: An adaptive equalizer apparatus with digital eye-opening monitor unit and the method thereof are provided. The apparatus comprises an equalizer unit, a sampling unit, and an eye-opening monitor unit. The equalizer unit equalizes a first signal to a second signal. The sampling unit over-samples the second signal and determines the logic status of the second signal according to the sampling data. The eye-opening monitor unit processes the sampling data and outputs a detecting signal according to the processing result. The detecting signal represents the adequacy of the parameters of the equalizer unit, and the equalizer unit determines whether to change its parameters according to the detecting signal.

Abstract: An adaptive equalization apparatus is provided. The adaptive equalization apparatus includes an equalizer, a monitor circuit, and a control circuit. The equalizer receives a first signal, and equalizes the first signal according to an equalization parameter setting to thereby generate a second signal. The monitor circuit is electrically connected to the equalizer, and monitors edges of the second signal in a real-time manner to thereby generate a detection result. The control logic is electrically connected to the equalizer, and adaptively adjusts the equalization parameter setting according to the detection result.

Abstract: A phase locked loop (PLL) with phase rotation spreading includes a phase detector, a charge pump, a filter, a voltage controlled oscillator (VCO) and a selector. The phase detector receives a reference clock signal and a feedback clock signal to thereby produce an error signal. The charge pump converts the error signal into a current signal. The filter converts the current signal into a voltage signal. The VCO produces N clock signals with a same frequency in accordance with the voltage signal, where the N clock signals have phases ?0 to ?N-1 respectively, and ?j indicates a lead of 2?/N over ?j+1, for j=0, 1, . . . , N?2. The selector selects one from the N clock signals in accordance with a predetermined sequence to thereby produce a target clock signal, and finely adjusts a frequency of the target clock signal for a spreading operation.