Abstract: A supporting device is provided. The supporting device is set on a working surface for bearing a display. The supporting device comprises a base and an upright, wherein the base includes a stationary housing, a rotating element, a first gear, a second gear, a driving module, and a controlling module. The stationary housing is disposed on the working surface; the rotating element is rotatably disposed on the stationary housing and co-defines an accommodating space with the stationary housing. The first gear is disposed in the accommodating space; the second gear is also disposed in the accommodating space and is engaged to the first gear. The driving module is connected to the second gear for driving the second gear; the controlling module is electrically connected to the driving module. The upright moves together with the rotating element, the second gear, and the driving module in a circumferential direction with respect to the first gear while the driving module is controlled by the controlling module.

Abstract: A supporting device for supporting a display is provided. The supporting device includes an upright, a bearing slider, an actuating module, a driving module, and a control module. The upright includes a column body and a receiving space. The bearing slider is slidably disposed in the receiving space. The actuating module includes a screw rod and a screwing element, the screw rod is pivoted to the upright along a first axis and inserted to the screwing element, and the screwing element is disposed on the bearing slider and screws with the screw rod. The driving module is connected to the actuating module and drives the screw rod to rotate about the first axis. The control module controls the driving module to drive the screw rod to rotate to make the screwing element and the bearing slider move between a highest position and a lowest position along the first axis.

Abstract: Apparatus and methods for power amplifiers with broadband matching networks are disclosed. In certain embodiments, a mobile device includes a transceiver that generates a radio frequency input signal, and a front-end system including a compound semiconductor die and a silicon switch die. The compound semiconductor die includes a power amplifier including one or more power amplifier stages that amplify the radio frequency input signal to generate a radio frequency output signal. The silicon switch die includes a band selection switch that receives the radio frequency output signal. The compound semiconductor die and the silicon switch die each include at least one controllable impedance for providing a bandwidth adjustment to the power amplifier.

Abstract: The present disclosure provides a semiconductor structure having a fin structure. The semiconductor includes a substrate defined with an active region. A first gate structure is disposed in the active region and includes a dielectric material. A second gate structure is disposed in the active region and includes the dielectric material. A fin structure having a first top surface is arranged to alternate with the first gate structure and the second gate structure. The first gate structure has a second top surface and the second gate structure has a third top surface. The second top surface and the third top surface are lower than the first top surface.

Abstract: The present disclosure provides a method of manufacturing a semiconductor device. The method includes: filling a trench of a stacking structure with a bottom anti-reflection coated material to form a dummy via in the trench, in which the stacking structure includes a low-k material layer and a cap layer, and the trench runs through the low-k material layer and the cap layer; and etching the dummy via by performing a first etching process and a second etching process.

Abstract: The present disclosure provides a semiconductor structure having a fin structure and a method of manufacturing the semiconductor structure. The semiconductor includes a substrate defined with an active region. A first gate structure is disposed in the active region and includes a dielectric material. A second gate structure is disposed in the active region and includes the dielectric material. A fin structure having a first top surface is arranged to alternate with the first gate structure and the second gate structure. The first gate structure has a second top surface and the second gate structure has a third top surface. The second top surface and the third top surface are lower than the first top surface.

Abstract: A water treatment system and a ballast water treatment method. A ballast water treatment system according to an embodiment of the present invention comprises: a first ballast water supply pipe for receiving a supply of ballast water from a first sea chest positioned in a non-explosion-proof area of a ship; an electrolytic bath for electrolyzing the ballast water supplied from the first ballast water supply pipe; a second ballast water supply pipe for receiving a supply of ballast water from a second sea chest, which is positioned in an explosion-proof area of the ship, and supplying the ballast water to a ballast tank of the ship; a filter provided to the second ballast water supply pipe so as to filter the ballast water passing through the second ballast water supply pipe; and a third ballast water supply pipe connected to the second ballast water supply pipe so as to supply the ballast water, which has been electrolyzed from the electrolytic bath, to the ballast water which has passed through the filter.

Abstract: A transistor includes a semiconductor layer on a substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode electrically connected to the semiconductor layer. The semiconductor layer includes a second material doped to a first material. The first material includes a compound expressed as XYa of a Chemical Formula. X is one of Mo, W, Zr, or Re, Y is one of S, Se, or Te, and a is a natural number that is equal to or greater than 1. The second material includes at least one of W, Hf, Ta, Ti, Pt, Ni, Ga, or Zr. The second material includes an element that is different from the first material.

Abstract: A supporting device for supporting a display is provided. The supporting device includes an upright, a slider, a bearing module, a driving module, a transfer module, and a control module. The slider is slidably disposed in the upright, and partially extending outward from the upright. The bearing module includes a bearing board and a supporting element. The bearing board bears the display, and the supporting element is connected to the slider. The transfer module is connected between the driving module and the bearing board. The control module is electrically connected to the driving module, and controls the driving module to drive the transfer module to make the bearing board rotate about the normal axis and relative to the supporting element, and the display changes between a portrait state and a landscape state.

Abstract: Disclosed herein is a drug-coated balloon catheter including: a hub; a soft tip; a tube which connects the hub and the soft tip and is formed of a material having higher rigidity than the soft tip; and a balloon which is mounted on the tube and coated with a drug on the surface, wherein the tube includes: a guide lumen which allows a guide wire to be movable, the guide wire being inserted into a blood vessel via the hub; and an injection lumen into which a contrast medium is injected, the contrast medium being injected into the balloon through the hub or discharged therefrom, wherein the injection lumen includes: a flow center which is a portion corresponding to a width of the guide lumen; and a pair of bend supports which is extended beyond both end portions of the guide lumen on both sides of the flow center and deformed in response to bending of the tube, and the injection lumen has a cross-sectional area more than a half of a cross-sectional area of the guide lumen.

Abstract: An inductive device and a method of manufacturing the same are provided. The inductive device includes a magnetic base, a coil structure, and a package structure. The magnetic base includes a bottom plate, a core column, and a lateral wall defining a positioning trench. The coil structure includes a coil body, a first extending section, and a second extending section. The coil body disposed in the positioning trench surrounds the core column. The first extending section includes a first bent portion and a first terminal portion connected at a first connecting point. The second extending section includes a second bent portion and a second terminal portion connected at a second connecting point. A shortest distance between a first imaginary connection line defined between the first and second connecting points and a central axis of the core column is less than a minimum outer radius of the coil body.

Abstract: The present disclosure aims to implement UAV (unmanned aerial vehicle) logistics operation and air traffic control in flyable airspace technically through a UAV task planning system, which depends on blockchain technology to carry out UAV air traffic surveillance on flight segments in a predetermined barrier-free airway and optimize air traffic according to a safe separation distance for fewest UAV operators, air traffic controllers, communications links and airborne loads.

Abstract: The present invention provides a stent delivery assembly including: a catheter including a shaft having a proximal end and a distal end, and a balloon provided closer to the proximal end than the distal end on the shaft; and a stent having a tubular shape, and coupled to the balloon to surround an outer circumferential surface of the balloon, wherein the balloon includes a main body having a first end and a second end, the stent is located to be biased towards the first end, such that the main body includes a preferential inflation region exposed to the outside between the second end and the stent, the main body is formed to extend with a diameter that is constant from the first end to the second end, and while the balloon is inflated, a portion of the stent close to the preferential inflation region is inflated in a tapered shape by a force caused when the preferential inflation region is preferentially inflated.

Abstract: A fluid level measurement system using a buoyant body includes a guide part installed in a direction perpendicular to the bottom surface of a fluid storage tank, and provided with a space in which a fluid can move therein; a buoyant body inserted into the guide part, and configured to float along the surface of the fluid inside the guide part; and a measurement part coupled to the top end of the guide part, and configured to measure the level of the surface of the fluid inside the fluid storage tank by transmitting a signal toward the buoyant body in the inner space of the guide part and then receiving a signal reflected from the buoyant body.

Abstract: A semiconductor device includes a substrate, an oxide layer and a word line. The substrate has a plurality of protruding portions. Adjacent two of the protruding portions define a dense zone, and another adjacent two of the protruding portions define a loose zone. The oxide layer is disposed on the substrate. The word line is disposed on the substrate. A bottom surface of a portion of the word line in the dense zone and a bottom surface of a portion of the word line in the loose zone are substantially at the same height.

Abstract: An example terminal includes a communication circuitry configured to communicate with a server; and a data processor configured to request the server to include a second user in a relationship group of a first user and to extend, to the relationship group, a range of authorization for an Internet of Things (IoT) apparatus registered as an apparatus of the first user.

Abstract: The present disclosure provides a method of forming a semiconductor structure. The method comprises providing a substrate comprising an isolation region, an active region adjacent to the isolation region, and a first top surface, wherein the isolation region includes an isolation trench filled with a dielectric material, and the active region includes a gate trench filled with a gate electrode material; forming a hard mask on the substrate; and performing an etching process to partially remove portions of the dielectric material and gate electrode material exposed by the hard mask to form a second top surface of the dielectric material and a third top surface of the gate electrode material, wherein the second top surface and the third top surface are substantially at the same level and are substantially lower than the first top surface.

Abstract: A semiconductor device includes a substrate, an oxide layer and a word line. The substrate has a plurality of protruding portions. Adjacent two of the protruding portions define a dense zone, and another adjacent two of the protruding portions define a loose zone. The oxide layer is disposed on the substrate. The word line is disposed on the substrate. A bottom surface of a portion of the word line in the dense zone and a bottom surface of a portion of the word line in the loose zone are substantially at the same height.