Abstract: The present disclosure relates to a method of forming a back-end-of-the-line metallization layer. The method is performed by forming a plurality of freestanding metal layer structures (i.e., metal layer structures not surrounded by a dielectric material) on a semiconductor substrate within an area defined by a patterned photoresist layer. A diffusion barrier layer is deposited onto the metal layer structure in a manner such that the diffusion barrier layer conforms to the top and sides of the metal layer structure. A dielectric material is formed on the surface of the substrate to fill areas between metal layer structures. The substrate is planarized to remove excess metal and dielectric material and to expose the top of the metal layer structure.

Abstract: A method includes performing a first epitaxy to grow a first epitaxy layer of a first conductivity type, and performing a second epitaxy to grow a second epitaxy layer of a second conductivity type opposite the first conductivity type over the first epitaxy layer. The first and the second epitaxy layers form a diode. The method further includes forming a gate dielectric over the first epitaxy layer, forming a gate electrode over the gate dielectric, and implanting a top portion of the first epitaxy layer and the second epitaxy layer to form a source/drain region adjacent to the gate dielectric.

Abstract: An optical effect disc, has a transparent substrate and a surface optical structure, and an optical recording media combining the optical effect disc. The surface optical structure may be a computer-generated hologram optical structure or a micro-lens array structure for showing the effect of brightening or peep prevention, or a diffraction gating structure for achieving a three-dimensional visual effect. The optical effect disc or the optical recording media may include an image forming layer for forming an image to be shown by the optical effect disc with corresponding visual effect. The optical effect disc or the optical recording media may include an adhesive layer for attaching the optical effect disc to the optical recording media.

Abstract: System and method for processing a semiconductor device surface to reduce dark current and white pixel anomalies. An embodiment comprises a method applied to a semiconductor or photodiode device surface adjacent to a photosensitive region, and opposite a side having circuit structures for the device. A doped layer may optionally be created at a depth of less than about 10 nanometers below the surface of the substrate and may be doped with a boron concentration between about 1E13 and 1E16. An oxide may be created on the substrate using a temperature sufficient to reduce the surface roughness below a predetermined roughness threshold, and optionally at a temperature between about 300° C. and 500° C. and a thickness between about 1 nanometer and about 10 nanometers. A dielectric may then be created on the oxide, the dielectric having a refractive index greater than a predetermined refractive threshold, optionally at least about 2.0.

Abstract: A low-profile luminaire has a light source comprised of one or more organic light emitting diodes (OLEDs), LEDs or other area light sources. The one or more area light sources are supported by a low-profile support structure that lies in a plane. The support structure, which supports the area light source substantially in the plane of the support structure, preferably has a maximum height of about two inches and more preferably a height of about one inch or less. It also has perimeter dimensions that allow the luminaire to fit within and to be supported by the T-bar grid openings of a grid ceiling system. Electrical components for driving and controlling the light source can be provided within the support structure or externally of this structure.

Abstract: A lighting system having neural hubs that connect to other neural hubs in a manner that allows a lighting system to be configured in a two dimensional pattern that can propagate out from a single neural hub. Straight sections can be provided for use in connection with the neural hubs to enhance the configurability of the lighting system.

Abstract: A system and method for determining the position of an object in a space includes positioning the object within the overlapping detection fields of a plurality of analog proximity sensors, wherein the proximity sensors produce an output signal having a signal strength related to the proximity of the object to the sensors. The strength of the output signal produced by each analog proximity sensor can be detected and a position for the object established based on the relative signal strengths produced by the proximity sensors. The system and method have particular application with devices for gestural control, for example gestural controlled dimmer switches, where some data manipulation is required to generate high-resolution positional data to activate the device.

Abstract: Image sensors comprising an isolation region according to embodiments are disclosed, as well as methods of forming the image sensors with isolation region. An embodiment is a structure comprising a semiconductor substrate, a photo element in the semiconductor substrate, and an isolation region in the semiconductor substrate. The isolation region is proximate the photo element and comprises a dielectric material and an epitaxial region. The epitaxial region is disposed between the semiconductor substrate and the dielectric material.

Abstract: The present disclosure relates to a method of forming a back-end-of-the-line metallization layer. The method is performed by forming a plurality of freestanding metal layer structures (i.e., metal layer structures not surrounded by a dielectric material) on a semiconductor substrate within an area defined by a patterned photoresist layer. A diffusion barrier layer is deposited onto the metal layer structure in a manner such that the diffusion barrier layer conforms to the top and sides of the metal layer structure. A dielectric material is formed on the surface of the substrate to fill areas between metal layer structures. The substrate is planarized to remove excess metal and dielectric material and to expose the top of the metal layer structure.

Abstract: A device includes a semiconductor substrate having a front side and a backside, a photo-sensitive device disposed on the front side of the semiconductor substrate, and a first and a second grid line parallel to each other. The first and the second grid lines are on the backside of, and overlying, the semiconductor substrate. The device further includes an adhesion layer, a metal oxide layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal oxide layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.

Abstract: Image sensors comprising an isolation region according to embodiments are disclosed, as well as methods of forming the image sensors with isolation region. An embodiment is a structure comprising a semiconductor substrate, a photo element in the semiconductor substrate, and an isolation region in the semiconductor substrate. The isolation region is proximate the photo element and comprises a dielectric material and an epitaxial region. The epitaxial region is disposed between the semiconductor substrate and the dielectric material.

Abstract: Methods and apparatus for a backside illuminated (BSI) image sensor device are disclosed. A BSI sensor device is formed on a substrate comprising a photosensitive diode. The substrate may be thinned at the backside, then a B doped Epi-Si(Ge) layer may be formed on the backside surface of the substrate. Additional layers may be formed on the B doped Epi-Si(Ge) layer, such as a metal shield layer, a dielectric layer, a micro-lens, and a color filter.

Abstract: The present disclosure relates to a method of forming a back-end-of-the-line metallization layer. The method is performed by forming a plurality of freestanding metal layer structures (i.e., metal layer structures not surrounded by a dielectric material) on a semiconductor substrate within an area defined by a patterned photoresist layer. A diffusion barrier layer is deposited onto the metal layer structure in a manner such that the diffusion barrier layer conforms to the top and sides of the metal layer structure. A dielectric material is formed on the surface of the substrate to fill areas between metal layer structures. The substrate is planarized to remove excess metal and dielectric material and to expose the top of the metal layer structure.

Abstract: A method for acquiring program parameters of a component in a graphical user interface of a piece of equipment and an operating method for a piece of equipment are provided. The method for acquiring program parameters of a component includes: detecting a selection of a component in a graphical user interface window, obtaining a first data set for searching the selected component, presenting the first data along with corresponding indications on a window frame to obtain an approved second data set, and storing the approved data set to a resource file. The method for operating a piece of equipment includes: reading a resource file, searching a window handle of a component described in the file in a graphical user interface window, performing a data read operation or a user operation by using the window handle and a corresponding parameter template in response to a request message.

Abstract: A recording apparatus characterized in that comprising a firmware configured to execute the following operation: performing a recording operation onto a rewritable optical recording medium with a recording speed selected from one of a plurality of recording speeds for an one-time optical recording medium; wherein the recording layer of the rewritable optical recording medium comprises at least four elements from Ge, In, Sb, Te, and Sn, wherein the component proportion of Sb/Te is ranged from 3 to 8, and the thickness of the recording layer is ranged from 3 nm to 25 nm.

Abstract: A semiconductor device and method of manufacturing a semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor device enhance carrier mobility. The method includes providing a substrate and forming a dielectric layer over the substrate. The method further includes forming a first trench within the dielectric layer, wherein the first trench extends through the dielectric layer and epitaxially (epi) growing a first active layer within the first trench and selectively curing with a radiation energy the dielectric layer adjacent to the first active layer.

Abstract: The present disclosure relates to a method of forming a back-end-of-the-line metallization layer. The method is performed by forming a plurality of freestanding metal layer structures (i.e., metal layer structures not surrounded by a dielectric material) on a semiconductor substrate within an area defined by a patterned photoresist layer. A diffusion barrier layer is deposited onto the metal layer structure in a manner such that the diffusion barrier layer conforms to the top and sides of the metal layer structure. A dielectric material is formed on the surface of the substrate to fill areas between metal layer structures. The substrate is planarized to remove excess metal and dielectric material and to expose the top of the metal layer structure.

Abstract: An exemplary video decoding apparatus includes a first decoding unit configured for decoding a first encoded block to generate first residual values, a first detecting unit configured for detecting whether all of the first residual values have a same first value, a first processing circuit configured for processing the first residual values to generate first processed residual values, and a second processing circuit configured for generating a decoded block corresponding to the first encoded block. When all of the first residual values have the same first value, the first detecting unit controls the second processing circuit to generate the decoded block without referring to the first processed residual values.