Abstract: Provided is a time-to-digital converter, comprising a phase frequency detector configured to receive a phase-locked loop input clock and a feedback clock, a ring oscillator configured to perform oscillation with multi-phase clocks of a first period, a counter array configured to count the number of oscillations in which the ring oscillator oscillates in a first period by the number of positive integers during the first pulse width, a multiplexer configured to divide the first period into a plurality of zones using edge information of the multi-phase clocks of the ring oscillator, and selects and outputs voltage information of a plurality of neighboring phase clocks included in a first zone from the plurality of zones, an analog-to-digital converter, a calibrator, and a first adder, wherein the calibrator comprises, an offset lookup table generation circuit, a gain-corrected analog-to-digital conversion output generator, and a second adder.

Abstract: A semiconductor device comprising a plurality of active patterns on a substrate. The semiconductor device may include a device isolation layer defining the plurality of active patterns, a gate electrode extending across the plurality of active patterns, and a source/drain pattern on the active patterns. The plurality of active patterns may comprise a first active pattern and a second active pattern. The source/drain pattern comprises a first part on the first active pattern, a second part on the second active pattern, and a third part extending from the first part and along an upper portion of the first active pattern. The device isolation layer comprises a first outer segment on a sidewall of the first active pattern below the source/drain pattern. A lowermost level of a bottom surface of the third part may be lower than an uppermost level of a top surface of the first outer segment.

Abstract: A semiconductor device includes a multi-channel active pattern, a plurality of gate structures on the multi-channel active pattern and spaced apart from each other in a first direction, the plurality of gate structures including a gate electrode that extends in a second direction different from the first direction, a source/drain recess between the adjacent gate structures, and a source/drain pattern on the multi-channel active pattern in the source/drain recess, wherein the source/drain pattern includes: a semiconductor liner layer including silicon-germanium and extending along the source/drain recess, a semiconductor filling layer including silicon-germanium on the semiconductor liner layer, and at least one or more semiconductor insertion layers between the semiconductor liner layer and the semiconductor filling layer, and wherein the at least one or more semiconductor insertion layers have a saddle structure.

Abstract: The present disclosure relates to a healable superplastic amorphous alloy, and specifically, to a healable superplastic amorphous alloy capable of exhibiting superplastic behavior and unique healable behavior by maximizing the complexity of the amorphous structure for an Icosahedral quenched-in nuclei quasi-crystal cluster to be formed in the amorphous matrix through the composition limitation and additive element control of Zr—Cu—Ni—Al alloy.

Abstract: Methods and systems for executing tracking and monitoring manufacturing data of a battery are disclosed. One method includes: receiving, by a server system, sensing data of the battery from a sensing system; generating, by the server system, mapping data based on the sensing data; generating, by the server system, identification data of the battery based on the sensing data; generating, by the server system, monitoring data of the battery based on the sensing data, the identification data, and the mapping data; and generating, by the server system, display data for displaying a simulated electrode of the battery on a graphical user interface based on the monitoring data of the battery.

Abstract: A supporting device capable of being easily assembled and commonly supporting a washing machine, a dryer, and the like having different leg sizes and a laundry treating apparatus having the same. The laundry treating apparatus includes a laundry treating apparatus main body, a supporting device main body configured to support the laundry treating apparatus main body, a leg coupled to a bottom of the laundry treating apparatus main body, and a supporter installed in the supporting device main body, wherein the supporter includes a guide member configured to accommodate the leg and including an insertion groove, and a fixing member including a fixing protrusion to be inserted into the insertion groove, the fixing member being coupled to the guide member to fix the leg.

Abstract: Disclosed are novel compounds of Chemical Formula 1, optical isomers of the compounds, and pharmaceutically acceptable salts of the compounds or the optical isomers. The compounds, isomers, and salts exhibit excellent activity as GLP-1 receptor agonists. In particular, they, as GLP-1 receptor agonists, exhibit excellent glucose tolerance, thus having a great potential to be used as therapeutic agents for metabolic diseases. Moreover, they exhibit excellent pharmacological safety for cardiovascular systems.

Abstract: A display device and method of manufacturing same includes: a display panel having a pixel area and a peripheral area adjacent to the pixel area, a light control layer disposed on the display panel and at least partially overlapping the pixel area, a light blocking portion at least partially overlapping the peripheral area, and a protective layer disposed between the light control layer and the light blocking portion.

Abstract: The present disclosure relates to a secondary battery comprising an electrode assembly having an electrode lead attached thereto, a case comprising a receiving portion in which the electrode assembly is received and a sealing portion comprising a sealant resin and configured to seal the electrode assembly, a lead film configured to cover a portion of an outer surface of the electrode lead and interposed between the electrode lead and the case, a vent area disposed in at least a portion of the case, and a vent member comprising a first layer comprising a resin having lower melting point than the sealant resin, and a second layer disposed on at least one surface of the first layer and comprising an adhesive material. The vent member may be inserted into the vent area. A thickness of the second layer may be equal to or smaller than 5 ?m.

Abstract: Disclosed herein are a method, an apparatus and a storage medium for encoding/decoding using a transform-based feature map. An optimal basis vector is extracted from one or more feature maps, and a transform coefficient is acquired through a transform using the basis vector. The basis vector and the transform coefficient may be transmitted through a bitstream. In an embodiment, one or more feature maps are reconstructed using the basis vector and the transform coefficient, which are decoded from the bitstream.

Abstract: Disclosed herein are image-based object recognition method and system by and in which a learning server performs image-based object recognition based on the learning of environment variable data. The image-based object recognition method includes: receiving an image acquired through at least one camera, and segmenting the image on a per-frame basis; primarily learning labeling results for one or more objects in the image segmented on a per-frame basis; performing primary reasoning by performing object detection in the image through a model obtained as a result of the primary learning; performing data labeling based on the results of the primary reasoning, and performing secondary learning with weights allocated to respective boxes obtained by the primary reasoning and estimated as object regions; and finally detecting one or more objects in the image through a model generated as a result of the secondary learning.

Abstract: Provided are a method for preparing a polyetherketoneketone and a polyetherketoneketone prepared thereby, wherein, at the time of a polymerization reaction, nitrogen gas is blown into a liquid reaction medium while stirring, thereby quickly removing hydrochloric acid, which is a by-product generated during the reaction, and preventing aggregation of resin particles, thus suppressing the generation of scales.

Abstract: The present disclosure relates to a simulation apparatus for secondary battery production.

Abstract: Provided are an apparatus for performing leveling of a person image and an operating method thereof. The method includes: receiving an original person image; selecting an arbitrary latent vector in a latent space; generating a virtual person image based on the latent vector; optimizing the latent vector such that identity similarity between the original person image and the virtual person image increases; manipulating the optimized latent vector; and generating a levelled person image corresponding to the original person image, by using the manipulated latent vector.

Abstract: A display device includes a light emitting diode electrically connected between a driving voltage line and a common voltage line; a driving transistor electrically connected between the driving voltage line and the light emitting diode; a second transistor electrically connected between a first electrode of the driving transistor electrically connected to the driving voltage line and a data line; a first scan line electrically connected to a gate electrode of the second transistor; a third transistor electrically connected between a second electrode of the driving transistor electrically connected to the light emitting diode and a gate electrode of the driving transistor; and a connection electrode that connects the gate electrode of the driving transistor and the third transistor, wherein at least a part of a contact portion where the connection electrode contacts the third transistor does not overlap the first scan line.

Abstract: A secondary battery includes: an electrode assembly including electrode sheets and a separator interposed between the electrode sheets; a pouch-like battery casing in which the electrode assembly is received; an electrode lead connected to the electrode assembly and protruding out from the battery casing; and a lead film covering the electrode lead and interposed between the electrode lead and the battery casing, wherein the lead film includes an outer layer covering the electrode lead and an inner layer disposed inside of the outer layer, and the inner layer includes a material having a higher air permeability as compared to the outer layer.

Abstract: A semiconductor memory device in which performance and reliability are improved, and a method for fabricating the same are provided. The semiconductor memory device includes a conductive line extending in a first direction on a substrate, an interlayer insulation film that includes a cell trench extending in a second direction intersecting the first direction, on the substrate, a first gate electrode and a second gate electrode that are spaced apart from each other in the first direction and each extend in the second direction, inside the cell trench, a channel layer that is inside the cell trench and is electrically connected to the conductive line, on the first gate electrode and the second gate electrode, and a gate insulation layer interposed between the first gate electrode and the channel layer, and between the second gate electrode and the channel layer.

Abstract: A method of manufacturing a semiconductor package of stacked semiconductor chips includes forming a reverse wire bond by bonding one end of a reverse wire to a chip pad of the second-highest semiconductor chip of the stacked semiconductor chips and connecting the other end of the reverse wire to a conductive bump on a chip pad of the uppermost semiconductor chip of the stacked semiconductor chips. The method also includes molding the stacked semiconductor chips with the reverse wire bond using a mold layer. The method further includes processing the mold layer to expose the conductive bump and the other end of the reverse wire in the reverse wire bond through an upper surface of the mold layer.

Abstract: Disclosed is a memory device including a row decoder generating word line (WL) control signals based on a row address from an external device, a first sub-array including memory cells connected to word lines, a first sub-word line driver (SWD) providing a selection voltage or a non-selection voltage to odd-numbered word lines of the word lines based on odd-numbered WL control signals corresponding to the odd-numbered word lines, and a second SWD providing the selection voltage or the non-selection voltage to even-numbered word lines of the word lines based on even-numbered WL control signals corresponding to the even-numbered word lines. The first SWD applies the non-selection voltage to non-selection word lines of the even-numbered word lines, in response to the even-numbered WL control signals, and the second SWD applies the non-selection voltage to non-selection word lines of the odd-numbered word lines, in response to the odd-numbered WL control signals.