Abstract: A semiconductor device may include a bit line extending in a first direction, a semiconductor pattern on the bit line, the semiconductor pattern including first and second vertical portions, which are opposite to each other in the first direction, and a horizontal portion connecting the first and second vertical portions, first and second word lines on the horizontal portion to be adjacent to the first and second vertical portions, respectively, and a gate insulating pattern between the first vertical portion and the first word line and between the second vertical portion and the second word line. A bottom surface of the horizontal portion may be located at a height that is lower than or equal to the uppermost surface of the bit line.

Abstract: A semiconductor device includes: a fin-type active region extending on a substrate in a first direction that is parallel to an upper surface of the substrate; and a source/drain region in a recess region extending into the fin-type active region, wherein the source/drain region includes: a first source/drain material layer; a second source/drain material layer on the first source/drain material layer; and a first dopant diffusion barrier layer on an interface between the first source/drain material layer and the second source/drain material layer.

Abstract: The present invention relates to a use of a triazole compound as a ghrelin receptor agonist and, more specifically, to a composition for preventing or treating diseases mediated by the ghrelin receptor, the composition being of a triazole compound which strongly binds to the ghrelin receptor with very high specificity. The compound provided by the present invention exhibits a strong binding force to the ghrelin receptor with very high specificity, and thus may be very usefully employed for preventing or developing a therapeutic agent for diseases mediated by the ghrelin receptor.

Abstract: Disclosed are semiconductor memory devices and their fabrication methods. The semiconductor memory device comprises a peripheral circuit structure including peripheral circuits on a semiconductor substrate and a first dielectric layer on the peripheral circuits, a cell array structure on the semiconductor substrate, and a shield layer between the peripheral circuit structure and the cell array structure. The cell array structure includes bit lines, first and second active patterns on the bit lines, first word lines that extend in a second direction on the first active patterns, second word lines that extend in the second direction on the second active patterns, data storage patterns on the first and second active patterns, and a second dielectric layer on the semiconductor substrate. A hydrogen concentration of the first dielectric layer is greater than that of the second dielectric layer.

Abstract: The present disclosure relates to a battery pack and an operation method thereof. The battery pack includes a pack case, a plurality of cylindrical battery cells in the pack case, and a current breaking device in the pack case to connect the plurality of cylindrical battery cells and having a portion including a bimetal. The current breaking device includes a fixed end contacting an electrode terminal of the cylindrical battery cell, a free end contacting an electrode terminal of the surrounding cylindrical battery cell, and a flexible member configured to elastically press the free end toward the surrounding cylindrical battery cell. The battery pack may include a current breaking device using bimetal that is capable of quickly restoring a connection with a surrounding cylindrical battery cell when a state of a battery cell separated from the surroundings in case of an abnormal state thereof is recovered.

Abstract: A semiconductor device includes a first conductive line that extends in a first horizontal direction, a plurality of semiconductor patterns on the first conductive line and spaced apart from each other in the first horizontal direction wherein each of the semiconductor patterns includes a first vertical part and a second vertical part that are opposite to each other in the first horizontal direction, a second conductive line that extends in a second horizontal direction between the first vertical part and the second vertical part of each of the semiconductor patterns, the second horizontal direction intersecting the first horizontal direction, a gate dielectric pattern between the first vertical part and the second vertical part and between the second vertical part and the second conductive line, and a blocking pattern between neighboring semiconductor patterns.

Abstract: Semiconductor memory devices are provided. A semiconductor memory device includes an isolation layer in a first trench and a first gate electrode portion on the isolation layer. The semiconductor memory device includes a second gate electrode portion in a second trench. In some embodiments, the second gate electrode portion is wider, in a direction, than the first gate electrode portion. Moreover, in some embodiments, an upper region of the second trench is spaced apart from the first trench by a greater distance, in the direction, than a lower region of the second trench. Related methods of forming semiconductor memory devices are also provided.

Abstract: Example of a garment, such as a jacket, pullover, hoodie, hat, or the like, having a cinchable or adjustable opening between panels is provided. When cinched, the inner panel's functionality is reduced or concealed. When uncinched, the inner panel's functionality is increased or exposed.

Abstract: A semiconductor device includes a substrate, a gate electrode on the substrate, a channel layer between the substrate and the gate electrode, a source electrode in contact with a first sidewall of the channel layer, and a drain electrode in contact with a second sidewall of the channel layer. The second sidewall is opposite to the first sidewall. The channel layer includes a first channel pattern in contact with one of the source electrode and the drain electrode, and a second channel pattern between the first channel pattern and the gate electrode. The first channel pattern and the second channel pattern includes oxide semiconductor materials different from each other. A portion of the source electrode and a portion of the drain electrode overlap a portion of the gate electrode.

Abstract: The present invention relates to a novel use for HDL-ApoM-S1P (a high density lipoprotein in which apolipoprotein M is impregnated with sphingosine-1-phosphate), and more particularly, to using HDL-ApoM-S1P to prevent, improve, or treat degenerative brain disorders (in particular, Alzheimer's disease), cognitive disorders, learning disabilities, and memory disorders, and using HDL-ApoM-S1P to improve cognitive ability, learning ability, and memory. The HDL-ApoM-S1P according to the present invention not only alleviates neuroinflammation but also significantly exhibits improvement effects of cognitive disorder, learning disability, and memory disorder with respect to individuals suffering from degenerative brain disorders (in particular, Alzheimer's disease), and exhibits an effect of greatly reducing amyloid beta and tau deposition. Moreover, increased HDL-ApoM-S1P in the body also has an excellent effect of improving the cognitive, learning, and memory abilities of non-disabled individuals.

Abstract: An aerosol generation device providing a customized smoking experience and an aerosol-generating article applied thereto are provided. The aerosol generation device according to some embodiments of the present disclosure may include a housing which forms an accommodation space for accommodating an aerosol-generating article, and a heater part configured to heat the aerosol-generating article accommodated in the accommodation space to generate an aerosol. Here, the aerosol-generating article may include an aerosol-forming substrate part and an additive accommodation part in which an additive is accommodated, and the heater part may include a user control-type heater configured to heat the additive accommodation part. The user control-type heater may heat the additive accommodation part on the basis of a user input to provide a customized smoking experience according to a user's preferences.

Abstract: A display device includes a substrate including a bending area, a flat area adjacent to the bending area, and first and second surfaces opposite to each other, a display unit corresponding to the flat area and on the first surface, a support layer which is on the second surface of the substrate, corresponds to the flat area, and is disconnected at the bending area to define an end portion closest to the bending area, and the substrate defining a groove in the bending area. The end portion of the support layer is bendable together with the substrate and includes a flat portion corresponding to the flat area of the substrate, and a bending portion corresponding to the bending area of the substrate. The substrate which is unbent disposes the bending portion having an acute angle of inclination with respect to the second surface of the substrate.

Abstract: A display device may include a substrate, pixels, and a crack mitigation structure. The substrate may include a main region, a sub-region, and a bending region. The bending region may be connected between the main region and the sub-region and may include a curved outline section. The pixels may be disposed on the main region. The crack mitigation structure may be disposed on the bending region. A section of the crack mitigation structure may be substantially parallel to the curved outline section.

Abstract: A semiconductor device comprising a plurality of active patterns on a substrate. The semiconductor device may include a device isolation layer defining the plurality of active patterns, a gate electrode extending across the plurality of active patterns, and a source/drain pattern on the active patterns. The plurality of active patterns may comprise a first active pattern and a second active pattern. The source/drain pattern comprises a first part on the first active pattern, a second part on the second active pattern, and a third part extending from the first part and along an upper portion of the first active pattern. The device isolation layer comprises a first outer segment on a sidewall of the first active pattern below the source/drain pattern. A lowermost level of a bottom surface of the third part may be lower than an uppermost level of a top surface of the first outer segment.

Abstract: A semiconductor device includes: a fin-type active region extending on a substrate in a first direction that is parallel to an upper surface of the substrate; and a source/drain region in a recess region extending into the fin-type active region, wherein the source/drain region includes: a first source/drain material layer; a second source/drain material layer on the first source/drain material layer; and a first dopant diffusion barrier layer on an interface between the first source/drain material layer and the second source/drain material layer.

Abstract: A semiconductor device includes a first fin type pattern on a substrate, a second fin type pattern, parallel to the first fin type pattern, on the substrate, and an epitaxial pattern on the first and second fin type patterns. The epitaxial pattern may include a shared semiconductor pattern on the first fin type pattern and the second fin type pattern. The shared semiconductor pattern may include a first sidewall adjacent to the first fin type pattern and a second sidewall adjacent to the second fin type pattern. The first sidewall may include a first lower facet, a first upper facet on the first lower facet and a first connecting curved surface connecting the first lower and upper facets. The second sidewall may include a second lower facet, a second upper facet on the second lower facet and a second connecting curved surface connecting the second lower and upper facets.

Abstract: Provided is a smart electrochromic device. The smart electrochromic device may comprise: first and second electrodes disposed facing each other; an electrochromic layer disposed between the first and second electrodes and containing a metal oxide; and an electrolyte which is disposed between the second electrode and the electrochromic layer and which contains a mixture of a first base electrolyte containing silver (Ag), a second base electrolyte containing lithium (Li), and a solvent.

Abstract: An aerosol-generating article with improved cooling performance and flavor persistence and a method of producing the same are provided. The aerosol-generating article according to some embodiments of the present disclosure may include an aerosol-forming substrate part and a cooling part disposed downstream of the aerosol-forming substrate part configured to cool an aerosol formed in the aerosol-forming substrate part, and a sheet-type material may be disposed in a rolled or folded form in the cooling part. Here, the sheet-type material is a material including a flavoring and may serve as a cooling material as well as a flavor expressing material to improve flavor persistence and cooling performance of the aerosol-generating article.

Abstract: An aerosol-generating article with improved cooling performance and flavor persistence and a method of producing the same are provided. The aerosol-generating article according to some embodiments of the present disclosure may include an aerosol-forming substrate part and a cooling part disposed downstream of the aerosol-forming substrate part and configured to cool an aerosol formed in the aerosol-forming substrate part, and a sheet-type material may be disposed on an inner wall of the cooling part. Here, the sheet-type material is a material including a flavoring and may serve as a cooling material as well as a flavor expressing material to improve cooling performance and flavor persistence of the aerosol-generating article.

Abstract: There are provided a substrate treating apparatus and a substrate treating method. The substrate treating apparatus includes: a stage on which a substrate is seated, in a chamber; and a treatment liquid supply apparatus supplying a treatment liquid containing a solvent and a solute onto the substrate, wherein the treatment liquid supply apparatus supplies the treatment liquid onto the substrate while moving from a center of the substrate to an outer peripheral surface of the substrate.