Abstract: In some embodiments, a method of operating an image sensor supporting a low speed mode and a high speed mode includes: outputting a first set of output signals from a first pixel group to a first output line group by enabling, during a first period of the low speed mode, a first load circuit group connected to the first set of output signals; outputting a second set of output signals from a second pixel group to a second output line group by enabling, during a second period of the low speed mode different from the first period, a second load circuit group connected to the second set of output signals; and disabling the second load circuit group during at least a part of the first period.

Abstract: A line memory device includes a plurality of memory cells, a data line pair, a sense amplifier and an output unit. The plurality of memory cells are disposed adjacent to each other in a line. The data line pair is coupled to the memory cells to sequentially transfer memory data bits stored in the memory cells to the sense amplifier. The sense amplifier is configured to amplify the memory data bits that are sequentially transferred through the data line pair by corresponding delay times which are different from each other. The output unit samples an output of the sense amplifier to sequentially output retimed data bits of the memory data bits in response to a read clock signal. The read clock signal has a cyclic period which is less than a maximum delay time among the delay times.

Abstract: An analog-to-digital converter configured to convert an analog signal into a digital signal includes a first converter configured to receive an input signal of an analog type, compare the input signal with a plurality of reference signals, select one of the plurality of reference signals based on the comparison, and output an upper bit that is a portion of the digital signal based on the selected reference signal, a second converter configured to perform an oversampling operation n times based on a residue signal indicating a difference between an upper analog signal corresponding to the upper bit value and the input signal and output an intermediate bit value of the digital signal corresponding to the first to n-th oversampling signals generated respectively during the oversampling operations performed n times, and a third converter configured to output a lower bit value of the digital signal corresponding to the n-th oversampling signal.

Abstract: An image sensor chip includes an internal voltage generator for generating internal voltages using an external voltage received at a first terminal of the image sensor chip, a temperature sensor for generating a temperature voltage, a selection circuit for outputting one of the external voltage, the internal voltages, and the temperature voltage, a digital code generation circuit for generating a digital code using an output voltage of the selection circuit, and a second terminal for outputting the digital code from the image sensor chip.

Abstract: A load floor for a vehicle, by which, as the load floor is manufactured by including manufacturing a honeycomb structure with paper and adding polyurethane sheets to both side surfaces of the honeycomb structure, light and sufficient structural stiffness and a sound absorption effect are obtained through the honeycomb structure. As the polyurethane sheets are respectively provided on both surfaces of the honeycomb structure, sound absorption and insulation performances are obtained to further increase a sound absorption and insulation effect.

Abstract: An apparatus for controlling a beamforming microphone considering the location of a driver seat may include: a driver seat sensor configured to sense the location of the driver seat and output the sensed location as a driver seat signal; a directivity control unit configured to calculate a beamforming angle based on the driver seat signal; and a signal processing unit configured to process voice signals outputted from first and second microphones, respectively, and extract and output a voice signal generated from a direction which coincides with the beamforming angle.

Abstract: A test pattern of a semiconductor device is provided, which includes first and second fins formed to project from a substrate and arranged to be spaced apart from each other, first and second gate structures formed to cross the first and second fins, respectively, a first source region and a first drain region arranged on the first fin on one side and the other side of the first gate structure, a second source region and a second drain region arranged on the second fin on one side and the other side of the second gate structure, a first conductive pattern connected to the first and second drain regions to apply a first voltage to the first and second drain regions and a second conductive pattern connecting the first source region and the second gate structure to each other.

Abstract: A pre-processing apparatus for speech recognition may include: a trailing silence period detection unit configured to detect the length of a trailing silence period contained in a speech signal; a reference trailing silence period storage unit configured to store the length of a reference trailing silence period; and a trailing silence period adjusting unit configured to adjust the length of the trailing silence period contained in the speech signal based on the length of the reference trailing silence period.

Abstract: An apparatus includes an operational amplifier circuit comprising at least one operational amplifier and a feedback circuit coupled between the output terminal and input terminal of the operational amplifier circuit and configured to apply a feedback gain to an output signal at the output of the first operational amplifier. The apparatus further includes a variable compensation capacitor coupled to the output terminal of the operational amplifier circuit and configured to vary a capacitance thereof responsive to the feedback gain.

Abstract: A line memory device includes a plurality of memory cells, a data line pair, a sense amplifier and an output unit. The plurality of memory cells are disposed adjacent to each other in a line. The data line pair is coupled to the memory cells to sequentially transfer memory data bits stored in the memory cells to the sense amplifier. The sense amplifier is configured to amplify the memory data bits that are sequentially transferred through the data line pair by corresponding delay times which are different from each other. The output unit samples an output of the sense amplifier to sequentially output retimed data bits of the memory data bits in response to a read clock signal. The read clock signal has a cyclic period which is less than a maximum delay time among the delay times.

Abstract: A line memory device includes a plurality of memory cells, a data line pair, a sense amplifier and an output unit. The plurality of memory cells are disposed adjacent to each other in a line. The data line pair is coupled to the memory cells to sequentially transfer memory data bits stored in the memory cells to the sense amplifier. The sense amplifier is configured to amplify the memory data bits that are sequentially transferred through the data line pair by corresponding delay times which are different from each other. The output unit samples an output of the sense amplifier to sequentially output retimed data bits of the memory data bits in response to a read clock signal. The read clock signal has a cyclic period which is less than a maximum delay time among the delay times.

Abstract: A test pattern of a semiconductor device is provided, which includes first and second fins formed to project from a substrate and arranged to be spaced apart from each other, first and second gate structures formed to cross the first and second fins, respectively, a first source region and a first drain region arranged on the first fin on one side and the other side of the first gate structure, a second source region and a second drain region arranged on the second fin on one side and the other side of the second gate structure, a first conductive pattern connected to the first and second drain regions to apply a first voltage to the first and second drain regions and a second conductive pattern connecting the first source region and the second gate structure to each other.

Abstract: A pre-processing apparatus for speech recognition may include: a trailing silence period detection unit configured to detect the length of a trailing silence period contained in a speech signal; a reference trailing silence period storage unit configured to store the length of a reference trailing silence period; and a trailing silence period adjusting unit configured to adjust the length of the trailing silence period contained in the speech signal based on the length of the reference trailing silence period.

Abstract: An apparatus for controlling a beamforming microphone considering the location of a driver seat may include: a driver seat sensor configured to sense the location of the driver seat and output the sensed location as a driver seat signal; a directivity control unit configured to calculate a beamforming angle based on the driver seat signal; and a signal processing unit configured to process voice signals outputted from first and second microphones, respectively, and extract and output a voice signal generated from a direction which coincides with the beamforming angle.

Abstract: An image sensor includes a pixel array including a plurality of pixels which are arranged in a matrix of a plurality of rows and columns and each of the plurality of pixels being configured to convert intensity of incident light into an electrical image signal; and an extended counting analog-to-digital converter configured to perform a first analog-to-digital conversion to provide a digital signal from an output signal of the pixel array, to obtain a residue using the output signal of the pixel array and the digital signal, and to perform a second analog-to-digital conversion using the residue.

Abstract: A sense amplifier having a negative capacitance circuit receives differential input signals via a pair of data lines, and senses and amplifies a voltage difference between differential output signals corresponding to the differential input signals as loaded by the negative capacitance circuit using a differential-to-single-ended amplifier to generate a corresponding data output signal.

Abstract: A temperature sensor includes a band gap reference (BGR) circuit, a voltage generation unit and a digital CDS circuit. The band gap reference (BGR) circuit generates a reference voltage proportional to a temperature. The voltage generation unit generates a first voltage and a second voltage based on the reference voltage, where the first voltage and the second voltage are proportional to the temperature. The digital CDS circuit generates a digital signal corresponding to the temperature by performing a digital correlated double sampling (CDS) operation on the first voltage and the second voltage. The temperature sensor is able to detect a temperature accurately.

Abstract: An analog-to-digital converter includes a modulation unit and a digital signal generation unit. The modulation unit is disposed corresponding to at least one column line, and sequentially perform delta-sigma modulation on an analog input signal and at least one residue voltage to generate digital bit stream signals. The analog input signal is input through the at least one column line. The at least one residue voltage is generated by performing the delta-sigma modulation on the analog input signal. The digital signal generation unit generates a digital signal corresponding to the analog input signal based on the digital bit stream signals.

Abstract: An offset canceling circuit stores charge corresponding to a voltage difference between a reset voltage received from a unit pixel and a reference voltage, thereby canceling an offset of the unit pixel.

Abstract: A correlated double sampling circuit includes a delta-sigma modulator, a selection circuit, and an accumulation circuit. The delta-sigma modulator is configured to receive an input signal, delta-sigma modulate the input signal, and output a modulation signal. The selection circuit is configured to invert the modulation signal and selectively output one of the modulation signal and an inverted modulation signal in response to a selection signal corresponding to an operation phase. The accumulation circuit is configured to generate a first accumulation result by performing an accumulation process on one of the modulation signal and the inverted modulation signal in a first operation phase, and generate a second accumulation result by performing the accumulation process on the first accumulation result and the other one of the modulation signal and the inverted modulation signal in a second operation phase.