Abstract: A light-emitting device comprises a carrier, an insulated transparent adhesive layer, and a multi-layer epitaxial light-emitting structure located on the upper side of the insulated transparent adhesive layer. The top surface of the carrier comprises a first contact pad and a second contact pad. The insulated transparent adhesive layer is located on the upper side of the carrier, the first contact pad, and the second contact pad. The multi-layer epitaxial light-emitting structure comprises an active layer, a transparent layer located on the multi-layer epitaxial light-emitting structure, a third contact pad, and a fourth contact pad located on the multi-layer epitaxial light-emitting structure. At least one of surfaces of the first contact pad and the third contact pad facing the insulated transparent adhesive layer has a first plurality of protrusions. The first plurality of protrusions pierces the insulated transparent adhesive layer to electrically connect the first contact pad to the third contact pad.

Abstract: A light-mixing type light-emitting apparatus comprises a plurality of light-emitting diodes (LEDs) formed on a transparent carrier, wherein each of the LEDs with a transparent substrate emits light of a distinct color when driven, and the light beams generated from the LEDs are mixed to form a specific color. The transparent carrier setting forth in the present invention provides a mixing zone underlying the plurality of LEDs for the light beams to mix uniformly so as to improve the light-mixing efficiency of the light-emitting apparatus and shorten the mixing distance.

Abstract: This invention relates to a semiconductor light-emitting device including a semiconductor light-emitting chip and a transparent carrier. The semiconductor light-emitting chip includes an active layer and transparent substrate. The active layer emits light under a bias. At least a portion of the light emitted from the active layer enters into the transparent carrier through the transparent substrate. The semiconductor light-emitting chip is coupled to the transparent carrier through the transparent substrate. The area of the transparent carrier is larger than that of the active layer.

Abstract: A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a semiconductor substrate. The semiconductor substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [0?1] or [01?] from [100], or toward [011] or [0 ii] from [?00] so that the upper surface of the semiconductor substrate comprises at least two lattice planes with different lattice plane directions. The multilayer epitaxial structure has a roughened upper surface perpendicular to the predetermined lattice direction. The invention also discloses a method for fabricating a semiconductor light-emitting device.

Abstract: The light-emitting apparatus comprises a substrate, a first semiconductor layer formed on the substrate, a light-emitting layer formed on the first semiconductor layer, a second semiconductor layer formed on the light-emitting layer, a first transparent conductive oxide layer formed on the second semiconductor layer, a reflective metal layer form on the transparent conductive oxide layer, and a first electrode formed on the reflective metal layer; characterized in that the first transparent conductive oxide layer is formed with a plurality of cavities on the interface between the first transparent conductive oxide layer and the reflective metal layer for improving the adhesion strength therebetween.

Abstract: A light-emitting device includes a transparent substrate, a transparent adhesive layer on the transparent substrate, a first transparent conductive layer on the transparent adhesive layer, a multi-layer epitaxial structure and a first electrode on the transparent conductive layer, and a second electrode on the multi-layer epitaxial structure. The multi-layer epitaxial structure includes a light-emitting layer. The transparent substrate has a first surface facing the transparent adhesive layer and a second surface opposite to the first surface, wherein the area of the second surface is larger than that of the light-emitting layer, and the area ratio thereof is not less than 1.6.

Abstract: A tube type light emitting diode light source including a light source generator, a light guide and a diffuser is provided. The light source generator includes LEDs arranging in a line. The light guide has a grooved light incident surface and a grooved light-guiding surface. The grooved light incident surface encompasses the LEDs, and the grooved light-guiding surface is adapted for changing the propagating direction of an incident light. The diffuser covers the light guide.

Abstract: A method for manufacturing a light-emitting device comprising the steps of cutting a light-emitting unit by a laser beam, and cleaning the light-emitting unit by an acid solution to remove by-products resulted from the laser cutting.

Abstract: Disclosed is a planar light source device comprising a light generation device comprising at least two light-emitting elements; a light-mixing device for mixing a generated light from the light generation device to generate a mixed linear light; and a planar light generation device comprising a light-scattering portion for receiving the mixed light to generate a planar light.

Abstract: An illumination package is disclosed in the invention. The illumination package includes an optical element, package base, and a light emitter. The optical element is designed to redirect a majority of light emitted from the light emitter to a direction approximately perpendicular to a longitudinal axis of the optical element. In one embodiment, the optical element includes an flared portion and a base portion. The flared portion is constructed by an upper surface forming a recess, a side surface adjacent to the upper surface and curved, and a lower surface connecting to the base portion. In another embodiment, a concave lens is formed on the upper surface.

Abstract: A flat light-emitting apparatus includes a light-emitting element for radiating visible light consisting of a first-wavelength light with a wavelength substantially not less than 600 nm and a second-wavelength light with a wavelength substantially not greater than 480 nm, a wavelength conversion material for generating a third-wavelength light when irradiated by the second-wavelength light, a first color filter for the passing of the first-wavelength light, a second color filter for the passing of the second-wavelength light, and a third color filter for the passing of the third-wavelength light.

Abstract: A light-emitting device includes a compound substrate including a high thermal conductive layer and a substrate disposed around the high thermal conductive layer, an adhesive layer formed on the compound substrate, and a light-emitting stack layer formed on the adhesive layer. Therefore, problems in cutting a metal layer in a grain cutting process are solved.

Abstract: A planar light-emitting device includes a light source for generating light, a light gathering module for gathering the light generated by the light source and generating mixed light, a linear light generator comprising a light distributing unit for receiving the mixed light and distributing the mixed light to generate linear light, and a planar light generator for receiving the linear light and generating a planar light.

Abstract: A light emitting diode having an adhesive layer and a reflective layer and a manufacturing method thereof featured by adhering together a light emitting diode stack and a substrate having a reflective metal layer by use of a transparent adhesive layer so that the light rays directed to the reflective metal layer can be reflected therefrom to improve the brightness of the light emitting diode.

Abstract: A backlight module including an independent light source is provided. The backlight module includes a light generation device, a light transmission device, a light mixing device and a planar light generation device. The light generation device may include one or more light emitting components. The light transmission device may be adopted for receiving and transmitting the light emitted by the light generation device. The light mixing device may be adopted for mixing the light emitted by the light transmission device to generate a mixed linear light. The planar light generation device may comprise a light distributing portion for receiving the mixed linear light to generate a planar light.

Abstract: A nitride light-emitting device having an adhesive reflecting layer includes a transparent adhesive layer, a nitride light-emitting stack layer and a metal reflecting layer. The transparent adhesive layer adheres the nitride light-emitting stack layer and the metal reflecting layer. Therefore, the metal reflecting layer can reflect light emitted from the light-emitting stack layer to increase the brightness of the nitride light-emitting device.

Abstract: A light emitting device includes a micro-reflection structure carrier, which is formed by performing etching process on a carrier, a reflection layer, a light emitting layer, and a transparent adhesive layer, wherein the reflection layer is formed over the micro-reflection structure carrier and adheres to the light emitting layer through the transparent adhesive layer.

Abstract: An illumination package is disclosed in the invention. The illumination package includes an optical element, package base, and a light emitter. The optical element is designed to redirect a majority of light emitted from the light emitter to a direction approximately perpendicular to a longitudinal axis of the optical element. In one embodiment, the optical element includes an flared portion and a base portion. The flared portion is constructed by an upper surface forming a recess, a side surface adjacent to the upper surface and curved, and a lower surface connecting to the base portion. In another embodiment, a concave lens is formed on the upper surface.

Abstract: A light emitter includes an emitting stack, a first electrode, a second electrode and a voltage dependent resistor layer. The emitter stack has a first surface area and a second surface area. The first electrode is formed on the first surface area of the emitting stack. The second electrode is formed on the second surface area of the emitting stack. The voltage dependent resistor layer is connected to the first and second electrodes, and is formed during the formation of the light emitter thus improving the yield of the light emitter.

Abstract: A light emitting device having a transparent substrate, a light emitting stack, and a transparent adhesive layer is provided. The light emitting stack is disposed above the transparent substrate and comprises a diffusing surface. The transparent adhesive layer is disposed between the transparent substrate and the diffusing surface of the light emitting stack; an index of refraction of the light emitting stack is different from that of the transparent adhesive layer.