Abstract: A light-emitting device comprises a substrate, an epitaxial structure formed on the substrate including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer. A trench is formed in the epitaxial structure to expose a part of side surface of the epitaxial structure and a part of surface of the first semiconductor layer, so that a first conductive structure is formed on the part of surface of the first semiconductor layer in the trench, and a second conductive structure is formed on the second semiconductor layer. The first conductive structure includes a first electrode and a first pad electrically contacted with each other. The second conductive structure includes a second electrode and a second pad electrically contacted with each other. Furthermore, the area of at least one of the first pad and the second pad is between 1.5×104 ?m and 6.2×104 ?m.

Abstract: An embodiment of this invention discloses a method of separating two material systems, which comprises steps of providing a bulk sapphire; forming a nitride system on the bulk sapphire; forming at least two channels between the bulk sapphire and the nitride system; etching at least one inner surface of the channel; and separating the bulk sapphire and the nitride system.

Abstract: A stamp having a nanoscale structure and a manufacturing method thereof are disclosed. The stamp includes a substrate, a buffer layer, and a nanoscale stamp layer. The method comprises forming a buffer layer on the substrate, and forming a stamp layer having a nanoscale structure on the buffer layer.

Abstract: A light emitting device having a transparent substrate, a light emitting stack, and a transparent adhesive layer is provided. The light emitting stack is disposed above the transparent substrate and comprises a diffusing surface. The transparent adhesive layer is disposed between the transparent substrate and the diffusing surface of the light emitting stack; an index of refraction of the light emitting stack is different from that of the transparent adhesive layer.

Abstract: An embodiment of the invention discloses a wavelength converting system capable of emitting a second electromagnetic radiation having a second wavelength in response to a first electromagnetic radiation having a first wavelength, wherein an energy level of the first electromagnetic radiation is higher than that of the second electromagnetic level, and a positive correlation is between the first wavelength and the second wavelength.

Abstract: The present invention discloses a semiconductor light-emitting device including a semiconductor light-emitting element, a first attaching layer and a wavelength conversion structure. The primary light emitted from the semiconductor light-emitting element enters the wavelength conversion structure to generate a converted light, whose wavelength is different form that of the primary light. In addition, the present invention also provides the method for forming the same.

Abstract: An embodiment of the invention discloses an optoelectronic semiconductor device comprising a semiconductor system capable of performing a conversion between light energy and electrical energy; an interfacial layer formed on at least two surfaces of the semiconductor system; an electrical conductor; and an electrical connector electrically connecting the semiconductor system to the electric conductor.

Abstract: A light-emitting device includes an LED chip emitting a primary light, and a phosphor deposited on the LED chip for absorbing the primary light to excite a secondary light, wherein the wavelength of the primary light is shorter than 430 nm and the LED chip is driven by current density greater than 200 mA/cm2. The wavelength-converting light-emitting device has a high light efficiency and a stable color temperature, wherein LED chip is diced from a wafer made by means of a phosphor-on-chip process.

Abstract: A light-emitting device comprises a semiconductor light-emitting stack; and an optical field tuning layer formed on the semiconductor light-emitting stack to change beam angles of the light-emitting device.

Abstract: This invention discloses a light emitting semiconductor device including a light-emitting structure and an external optical element. The optical element couples to the light-emitting structure circumferentially. In addition, the refractive index of the external optical element is greater than or about the same as that of a transparent substrate of the light-emitting structure, or in-between that of the transparent substrate and the encapsulant material.

Abstract: An illumination package is disclosed in the invention. The illumination package includes an optical element, package base, and a light emitter. The optical element is designed to redirect a majority of light emitted from the light emitter to a direction approximately perpendicular to a longitudinal axis of the optical element. In one embodiment, the optical element includes an flared portion and a base portion. The flared portion is constructed by an upper surface forming a recess, a side surface adjacent to the upper surface and curved, and a lower surface connecting to the base portion. In another embodiment, a concave lens is formed on the upper surface.

Abstract: An optoelectronical semiconductor device having a bonding structure comprises a first optoelectronical structure, a second optoelectronical structure, and a transparent bonding structure formed in-between.

Abstract: A light emitting device having a transparent substrate, a light emitting stack, and a transparent adhesive layer is provided. The light emitting stack is disposed above the transparent substrate and comprises a diffusing surface. The transparent adhesive layer is disposed between the transparent substrate and the diffusing surface of the light emitting stack; an index of refraction of the light emitting stack is different from that of the transparent adhesive layer.

Abstract: An illumination apparatus is disclosed in the invention. The illumination apparatus includes a cavity with a diffusion surface, a light source, a light-spreading device, and at least one optically-conditioning surface with a wavelike array formed thereon. The light-spreading device and the optically-conditioning surface spread the light generated by the light source. The light-spreading device includes a wing-shaped protrusion part, a light incident surface, a recess located away from the light incident surface, and an optically-conditioning surface including a wavelike array, wherein the wavelike array has a wavefront direction.

Abstract: An organic adhesive light-emitting device with an ohmic metal contact, including a conductive substrate having a first surface and a second surface over the upper surface, a light-emitting stack layer, an ohmic metal bulge formed over the first surface of the conductive substrate, a reflection layer formed over the light-emitting stack layer, a first reaction layer formed over the ohmic metal bulge and the second surface of the conductive substrate, a second reaction layer formed over the reflection layer, and an organic adhesive material. The reaction layer can punch through the organic adhesive material for forming the ohmic contact with the first reaction layer bonded to the second reaction layer by the organic adhesive material, and with the ohmic metal bulge.

Abstract: This disclosure relates to a light-emitting apparatus comprising a submount, a chip carrier formed on the submount, a light-emitting chip formed on the chip carrier, a reflecting cup formed on the submount and enclosing the light-emitting chip and the chip carrier, and a transparent encapsulating material for encapsulating the light-emitting chip.

Abstract: An illumination apparatus is disclosed in the invention. The illumination apparatus includes a cavity with a diffusion surface, a light source, a light-spreading device, and at least one optically-conditioning surface with a wavelike array formed thereon. The light-spreading device and the optically-conditioning surface spread the light generated by the light source. The light-spreading device includes a wing-shaped protrusion part, a light incident surface, a recess located away from the light incident surface, and an optically-conditioning surface including a wavelike array, wherein the wavelike array has a wavefront direction.

Abstract: The present invention is related to a light emitting diode of an omnidirectional reflector providing with a transparent conductive layer. In the present invention, a cohesion layer is formed between a transparent layer and a metal reflection layer to improve the cohesive force therebetween and increase the reflectivity of the light emitting diode, so as the present invention can enhance the light-emitting efficiency of the light emitting diode.

Abstract: A light-emitting device and manufacturing method thereof are disclosed. The light-emitting device includes a substrate, a semiconductor light-emitting structure, a filter layer, and a fluorescent conversion layer. The method comprises forming a semiconductor light-emitting structure over a substrate, forming a filter layer over the semiconductor light-emitting structure, and forming a fluorescent conversion layer over the filter layer.

Abstract: A light-emitting device comprising a substrate, a light-emitting stack, and a transparent adhesive layer having wavelength-converting materials embedded therein formed within the light-emitting device is provided.