Abstract: Adjusting a curvature of a substrate includes forming at least one deformed portion in a predetermined region of a substrate, wherein the substrate includes a curved region before forming the at least one deformed portion, and forming the at least one deformed portion includes irradiating the substrate in the predetermined region so as to fixedly displace substrate material in the predetermined region.

Abstract: The reflective photomask may include a substrate, a reflective layer formed on the substrate, an absorption pattern formed on the reflective layer and over a first portion of the substrate. A compensatory portion may be formed over at least a second portion of the substrate. The second portion is adjacent to the first portion, and the compensatory portion is thinner than the absorption pattern.

Abstract: A system and method for fabricating a photo mask are provided. The method includes preparing weak point data based on mask layout data, fabricating a photo mask based on the mask layout data and extracting critical point data by analyzing the aerial image of the fabricated photo mask based on the weak point data.

Abstract: A binary photomask with an improved resolution and a method of manufacturing the same are provided. The binary photomask may include a substrate, a transmission-prevention pattern formed on the substrate to define a circuit pattern, and a compensation layer configured to change light transmitted through the binary photomask based on a topology of the compensation layer and arranged on the transmission-prevention layer and/or the substrate.

Abstract: A method of manufacturing an extreme ultra-violet lithography (EUVL) alternating phase-shift mask comprises preparing a substrate having a reflective layer, forming a light-shielding layer pattern on the reflective layer to cover part of the reflective layer while leaving a reflective region of the reflective layer exposed, forming a trench in a phase-shift region of the reflective layer by etching the reflective layer, and changing the physical structure of a non phase-shift region of the reflective region to lower its reflectivity with respect to extreme ultra-violet (EUV) light.

Abstract: For fabricating lean-free stacked capacitors, openings are formed through layers of materials including a layer of support material displaced from a bottom of the openings. A respective first electrode is formed for a respective capacitor within each of the openings. The layer of support material is patterned to form support structures around the first electrodes. Masking spacers are formed around exposed top portions of the first electrodes, and exposed portions of the support material are etched away to form the support structures. Such stacked capacitors are applied within a DRAM (dynamic random access memory).

Abstract: A correction method and a system thereof automatically perform a measurement and an analysis for a photomask critical dimension (CD), to satisfy a desired CD uniformity and a desired mean-to-target (MTT) data. A correction for a portion where a CD error has occurred may be performed.

Abstract: A phase shift mask (PSM) is provided. The PSM includes a light-transmitting substrate, a light-blocking region, a first light-transmitting region, and a second light-transmitting region. The light-blocking region is formed in the light-transmitting substrate. The first light-transmitting region is formed as both a first phase shift region for transmitting 0°-phase shifted light and as a first polarization region for TE-polarizing the transmitted light. The second light-transmitting region contacts the first light-transmitting region to form a boundary. The second light-transmitting region is formed in the light-transmitting substrate as a second phase shift region for transmitting 180°-phase shifted light and as a second polarization region for TM-polarizing the transmitted light to prevent a phase conflict at the boundary.

Abstract: For fabricating lean-free stacked capacitors, openings are formed through layers of materials including a layer of support material displaced from a bottom of the openings. A respective first electrode is formed for a respective capacitor within each of the openings. The layer of support material is patterned to form support structures around the first electrodes. Masking spacers are formed around exposed top portions of the first electrodes, and exposed portions of the support material are etched away to form the support structures. Such stacked capacitors are applied within a DRAM (dynamic random access memory).

Abstract: A photomask ensures the transfer of a pattern having a uniform and desired CD onto a substrate from which an electronic device or the like is made. The photomask includes a transparent substrate, a light-shielding film on the front side of the substrate and defining a mask pattern of transmission regions dedicated for pattern formation, and an auxiliary pattern on the front side of the substrate that alters the intensity of the light beam passing through the substrate. After the mask pattern is formed, the photomask is tested to determine variations between the desired (target) CD and the CDs of the features of a pattern transcribed onto a test wafer using the photomask. A density function in which characteristics of the auxiliary pattern to be formed, e.g., the size, depth and/or pitch of recesses, is developed as a prediction of the intensity distribution of the light beam transmitted through the substrate once the auxiliary pattern is present at the front side of the substrate.

Abstract: A method of adjusting a deviation of a critical dimension of patterns formed by a photolithography process is disclosed. The method comprises measuring the deviation of the critical dimension of patterns formed by the photolithography process and then forming a recess, an undercut, or an isotropic groove in a photomask. The recess, undercut, or isotropic groove is formed to have dimensions corresponding to the amount of deviation of the critical dimension in the patterns. The dimensions of the recess, undercut, or isotropic groove are generally smaller than a wavelength ? of an exposure source used in the photolithography process.

Abstract: Disclosed is a semiconductor package and method of fabricating the same. According to the package of the present invention, a semiconductor chip 20 is disposed such that its bonding pad 21 is disposed upwardly. Metal lines 30,31 are deposited along a surface, both sides and a bottom face of the semiconductor chip 20 thereby electrically connecting its upper end 30 to the bonding pad 21 of the semiconductor chip 20. An entire resultant is encapsulated with molding compounds 50,51 such that a lower end of the metal line 31 is exposed thereby forming a ball land. A solder ball 60 is mounted on a portion of the metal line 31 exposed from the molding compound 51.

Abstract: A method for manufacturing a semiconductor device includes the steps of: a) preparing an active matrix provided with at least one transistor, a plurality of conductive plugs electrically connected to the transistors and an insulating layer formed around the conductive plugs; b) forming a conductive layer on top of the active matrix; c) patterning the conductive layer a predetermined configuration, thereby obtaining a number of bottom electrodes; d) forming a first BST layer; and e) forming a second BST layer.