Abstract: A semiconductor chip may include a wafer, a semiconductor device formed on the wafer, a first dielectric layer formed on the wafer and the semiconductor device, a first metal interconnection formed on the first dielectric layer, a second dielectric layer formed on the first dielectric layer and the lower interconnection, and a third dielectric layer formed on the second dielectric layer. A second metal interconnection may be formed in the third dielectric layer, a first nitride layer formed on the third dielectric layer and the first metal interconnection, a via hole extending through the wafer, the first dielectric layer, the second dielectric layer, the third dielectric layer and the first nitride layer, a via formed in the via hole and a third metal interconnection formed on the first oxide layer, an exposed upper end of the via and the second metal interconnection.

Abstract: Disclosed is a display driving chip of a semiconductor chip. According to an embodiment, the display driving chip comprises, input/output (I/O) pads each electrically connected to a lower interconnection on an active area, the I/O pads forming a perimeter on an inner peripheral surface of the active area, and dummy pads formed on the active area within the perimeter of I/O pads.

Abstract: Composite films comprising two-dimensional hole arrays, and related methods of preparing hole arrays.

Abstract: A humanoid robot that achieves stable walking based on servo control of a joint torque and a walking control method thereof. The humanoid robot calculates a joint position trajectory compensation value and a joint torque compensation value using a measurement value of a sensor, compensates for a joint position trajectory and a joint torque using the calculated compensation value, and drives a motor mounted to each joint according to the compensated joint torque.

Abstract: Disclosed herein are an apparatus and method for controlling stable walking of a robot based on torque. In a method of enabling stable walking by controlling torque of a hip joint portion using a Finite State Machine (FSM) without solving a complicated dynamic equation, torque of a stance leg is finally calculated using pose control torque of an upper body, pose control torque of a swing leg, and initial pose control torque of a stance leg supporting the upper body. Accordingly, the robot may stably walk with torque balance. Since gravity compensation torque is applied, a torso of the robot is not inclined and the pose of the robot is stably maintained.

Abstract: A robot and a control method thereof may adjust a yaw moment generated from a foot contacting a ground to achieve stable walking of the robot. The robot, which may have an upper body and a lower body, may include a main controller starting walking of the robot through only motions of joints of the lower body and adjusting a motion of the upper body such that a yaw moment generated from a foot the lower body during walking of the robot is less than the maximum static frictional force of a ground to perform stable walking of the robot, and sub controllers driving actuators of the joints according to a control signal of the main controller.

Abstract: A walking control apparatus of a robot includes joint portions provided in each of a plurality of legs of the robot, a state database to store state data of each of the legs and state data of the joint portions corresponding to the state of each of the legs, when the robot walks, a position instruction unit to store desired positions corresponding to the state data of the joint portions, an inclination sensing unit to sense an inclination of an upper body of the robot, a torque calculator to calculate torques using the inclination of the upper body and the desired positions, and a servo controller to output the torques to the joint portions to control the walking of the robot. Since the robot walks by Finite State Machine (FSM) control and torque servo control, the rotation angles of the joint portions do not need to be accurately controlled. Thus, the robot walks with low servo gain and energy consumption is decreased.

Abstract: A computer system, a control method thereof and a recording medium storing a computer program thereof are provided to recover a program efficiently and be resistant to viruses, worms, and user error. The control method of computer system receives a user's request for a recovery of a program which is installed in a first storage unit. A file system of a second storage unit is determined which stores therein a recovery program corresponding to the program for which the recovery is requested. The recovery program is read from the second storage unit with reference to the determined file system, and the program in the first storage unit is recovered by using the read recovery program.

Abstract: An image sensor is disclosed including a second semiconductor substrate including a metal interconnection and a second interlayer dielectric; a second via penetrating the second interlayer dielectric so that the second via is connected to the metal interconnection; a first semiconductor substrate on the second interlayer dielectric, the first semiconductor substrate having a unit pixel; a pre-metal dielectric on the first semiconductor substrate; a first via penetrating the pre-metal dielectric and the first semiconductor substrate, the first via being electrically connected to the second via; a first interlayer dielectric on the pre-metal dielectric including the first via; a metal interconnection on the first interlayer dielectric and connected to the first via and the unit pixel; a conductive barrier layer on the metal interconnection; and a color filter and a microlens on the first interlayer dielectric in each unit pixel.

Abstract: Provided are a semiconductor chip, a method of fabricating a semiconductor chip, and a semiconductor chip stack package. The semiconductor chip includes a semiconductor substrate and a semiconductor device on the semiconductor substrate. A dielectric covers the semiconductor device. A top metal is on the dielectric and electrically connected to the semiconductor device. A deep via penetrates the semiconductor substrate and the dielectric. An interconnection connects the deep via and the top metal electrically. A bump is in contact with the top metal and the interconnection.

Abstract: An image sensor includes a semiconductor substrate having a pixel region and a peripheral circuit region. An interlayer dielectric layer has metal wirings and a pad formed over the semiconductor substrate. A lower electrode is selectively formed over the metal wirings. A photo diode is formed over the interlayer dielectric layer of the pixel region. An upper electrode formed over the photo diode. Therefore, a vertical integration of the transistor and the photodiode may approach a fill factor to 100%, and provide higher sensitivity, implement more complicated circuitry without reducing sensitivity in each unit pixel, improve the reliability of the image sensor by preventing crosstalk, etc., between the pixels, and improve light sensitivity by increasing the surface area of the photo diode in the unit pixel.

Abstract: An image sensor and a method of manufacturing an image sensor. An image sensor may include a semiconductor substrate which may include a readout circuitry. An image sensor may include an interlayer dielectric over a semiconductor substrate, and/or a first metal pattern over an interlayer dielectric. An interconnection may penetrate an interlayer dielectric and/or may be connected to a readout circuitry. A first metal pattern may be formed over an interlayer dielectric, and/or may be connected to an interconnection. A second metal pattern may be formed over a first metal pattern. A photodiode pattern may be formed over a second metal pattern.

Abstract: An image sensor is provided. The image sensor can include a semiconductor substrate including a circuit region, an interlayer dielectric including a metal interconnection on the semiconductor substrate, a lower electrode on the metal interconnection, and a light receiving portion on the lower electrode. The light receiving portion can be a PIN diode formed to have a convex shape.

Abstract: An image sensor according to one embodiment of the present invention includes a semiconductor substrate having a CMOS circuit formed therein; an interlayer dielectric layer formed on the semiconductor substrate and including a trench formed therein; a metal wiring and a first conductive layer formed within the trench of the interlayer dielectric layer; an intrinsic layer formed on the semiconductor substrate including the first conductive layer and the interlayer dielectric layer; and a second conductive layer formed on the intrinsic layer.

Abstract: Provided is a plasma diagnostic apparatus having a probe unit, which is inserted into a plasma or disposed at boundary of a plasma, the apparatus including: a signal supplying unit having a signal supplying source; a current detecting/voltage converting unit for applying a periodic voltage signal applied from the signal supplying unit to the probe unit, detecting the magnitude of the current flowing through the probe unit, and converting the detected current into a voltage; and a by-frequency measurement unit for computing the magnitude and phase of individual frequency components of the current flowing through the probe unit by receiving the voltage output from the current detecting/voltage converting unit as an input.

Abstract: A wiring structure, a semiconductor device having the structure, and a method for manufacturing the semiconductor device are disclosed. The wiring structure includes a first metal layer, a second metal layer on the first metal layer, an insulating layer between the first metal layer and the second metal layer, and a metal via pattern formed in the insulating layer to electrically connect the first and second metal layers to each other. The metal via pattern includes a plurality of metal vias spaced apart from one another, and each of the metal vias includes a vertical via line extending in a vertical direction and a horizontal via line extending in a horizontal direction to cross the vertical via line. The wiring structure may achieve minimized chip defects, fewer cracks in the insulating layer, effective use of the occupation area of a semiconductor chip, and reduced chip size and manufacturing costs.

Abstract: An image sensor and fabricating method thereof are provided. A multi-layered interlayer insulating layer is formed on a substrate including a photodiode, and a metal line is formed in the interlayer insulating layer, such that the metal line passes through the interlayer insulating layer. A conductive barrier layer is formed on the metal line, a color filter array is formed on the interlayer insulating layer and the metal line, and microlenses are formed on the color filter array.

Abstract: Disclosed is a multinuclear transition metal half metallocene catalyst having a multinuclear half metallocene structure in which a transition metal of groups 3 to 10 on periodic table is connected to a cycloalkandienyl group or its derivative group on a side and also connected to phenol or phenolamine compound having a plurality of binding sites on another side. The metallocene catalyst is useful to produce syndiotatic styrene polymer having superior steroreguality, high melting point and broad molecular weight distribution with high activity together with a small amount of a cocatalyst. Further disclosed is a method for preparing styrene polymers using the same catalyst.

Abstract: The present invention relates to a transition metal half metallocene catalyst with a noble structure for preparing syndiotatic styrene polymer having high activity, superior stereoregularity, high melting point and broad molecular weight distribution and a process for preparing styrene polymer using the same. The present invention provides a half metallocene catalyst having a single nucleus structure, in which a transition metal in Groups 3 to 10 on the periodic table is connected to a cycloalkanedienyl group or its derivative forming 5-coordinate bond on a side thereof and to any one of triethanolamine, N-alkyldiethanolamine and N-dialkylethanolamine group, all of which have a plurality of binding sites and high steric hinderance, on the other side thereof. The noble metallocene catalyst according to the present invention is useful for preparing highly syndiotatic vinyl aromatic polymer with broad molecular weight distribution and high activity.

Abstract: A method of bonding a wafer in a system in package is provided. A plating layer is formed on each of a first semiconductor substrate and a second semiconductor substrate. The plating layers are then bonded to each other to connect the semiconductor substrates.