Abstract: A pore-filled ion exchange polyelectrolyte composite membrane from which the surface ion exchange polyelectrolyte has been removed and a method of manufacturing the same are provided. The ion exchange polyelectrolyte composite membrane exhibits low film resistance and low in-plane-direction swelling degree, and has a smaller film-thickness than a commercial film, and thus, can be used for various purposes. In addition, since the pore-filled ion exchange polyelectrolyte composite membrane is continuously manufactured through a roll-to-roll process, the manufacturing process is simple, and manufacturing costs can be greatly reduced.

Abstract: A battery includes an electrode assembly including a first electrode, a second electrode and a separator between the first electrode and the second electrode, the first electrode, the second electrode and the separator being wound around a winding axis to define a core and an outer peripheral surface. The first electrode and the second electrode include a first uncoated region and a second uncoated region along a winding direction, respectively, and an active material layer coating is absent in the first uncoated region and the second uncoated region. The battery further includes a housing receiving the electrode assembly through an opening formed at a bottom, a first current collector coupled to the first uncoated region and disposed within the housing, a cap covering the opening, a spacer interposed between the cap and the electrode assembly to fix the electrode assembly and seal the housing, and a terminal electrically connected to the second uncoated region.

Abstract: Provided are an electrode assembly, a battery, and a battery pack and vehicle including the same. An electrode assembly, in which a first electrode, a second electrode, and a separator interposed therebetween are wound about an axis to define a core and an outer circumferential surface. At least one of the first electrode and the second electrode includes, at a long side end portion, an uncoated portion exposed beyond the separator in a direction of the axis. At least a part of the uncoated portion is bent in a radial direction of the electrode assembly to define a bent surface region having overlapping layers of the uncoated portion. The bent surface region includes a welding target region having a number of the overlapping layers of the uncoated portion, and the welding target region extends along a radial direction of the electrode assembly.

Abstract: A secondary battery includes an electrode assembly having a positive electrode provided with a positive electrode tab, a separator, and a negative electrode provided with a negative electrode tab, the positive electrode, the separator, and the negative electrode being wound, the electrode assembly having a core part at a center thereof; a can configured to receive the electrode assembly therein, the negative electrode tab being connected to the can; a cap assembly coupled to an opening of the can, the positive electrode tab being connected to the cap assembly; and a reinforcing member provided on an end of the separator exposed beyond the positive electrode or the negative electrode to prevent heat of the positive electrode tab or the negative electrode tab from being transferred to the separator.

Abstract: Disclosed are novel compounds of Chemical Formula 1, optical isomers of the compounds, and pharmaceutically acceptable salts of the compounds or the optical isomers. The compounds, isomers, and salts exhibit excellent activity as GLP-1 receptor agonists. In particular, they, as GLP-1 receptor agonists, exhibit excellent glucose tolerance, thus having a great potential to be used as therapeutic agents for metabolic diseases. Moreover, they exhibit excellent pharmacological safety for cardiovascular systems.

Abstract: A display device includes a display panel having a folding axis extending in a first direction; and a panel supporter disposed on a surface of the display panel. The panel supporter includes a first layer including a first base resin and first fiber yarns extending in the first direction and dispersed in the first base resin, a second layer disposed on the first layer, the second layer including a second base resin and second fiber yarns extending in a second direction intersecting the first direction and dispersed in the second base resin, and a third layer disposed on the second layer, the third layer including a third base resin and third fiber yarns extending in the first direction and dispersed in the third base resin.

Abstract: A flexible display device is provided. A flexible display device according to one embodiment of the present invention comprises a body, a moving plate, a first pulley, a second pulley, a driving track and a flexible display. The flexible display is coupled to outer surfaces of the moving plate and the driving track, and the driving track forms a continuous track shape by itself or together with the moving plate. Therefore, provided is the flexible display device in which a constant tension can be maintained over the entire section of the driving track while the moving plate and the driving track support the flexible display, the occurrence of spring back in the flexible display can be minimized, and damage caused by unevenness of the flexible display, and the like, can be prevented.

Abstract: The present disclosure relates to an electrode stack for a lithium secondary battery, in which one or more positive electrodes and one or more negative electrodes are alternatingly stacked with a separator therebetween and insulation layers are formed on the outermost positive electrodes of the electrode stack. The insulation layers have an average thickness of 1 ?m to 8 ?m. The positive electrodes include a positive electrode collector; a positive electrode active material layer; and a protective layer including an inorganic compound. The protective layer is disposed between the positive electrode collector and the positive electrode active material layer. Additionally, an electrode assembly and a lithium secondary battery which include the electrode stack are also disclosed.

Abstract: A cyber threat information processing method including generating stack trace information of a reader program of an operating system executing a non-executable file at a hooking point of a system call of the operating system when the reader program performs the system call, obtaining a calling function for calling the system call and a variable corresponding to the calling function from the generated stack trace information, and providing description information about the obtained calling function and the variable corresponding to the calling function.

Abstract: Provided is a cyber threat information processing method including receiving input of a non-executable file, analyzing at least one feature related to a cyber threat of the input non-executable file, and generating analysis information, detecting whether the non-executable file includes a malicious action based on feature information obtained by selectively combining at least one piece of the generated analysis information, generating classification information on an attack technique and classification information on an attack group according to a malicious action when the malicious action is detected in the non-executable file, and providing cyber threat information to a user based on generated information of the non-executable file.

Abstract: An image sensor includes: a substrate including a first surface and a second surface on which light is incident, the second surface being opposite to the first surface; a photoelectric converter provided in the substrate; a first metal layer provided on the first surface of the substrate; a second metal layer provided on the first metal layer; and a capacitor layer provided between the first metal layer and the second metal layer, wherein the capacitor layer includes: a first lower electrode electrically connected to the first metal layer, a first upper electrode electrically connected to the second metal layer, a second upper electrode spaced apart from the first upper electrode and electrically connected to the second metal layer, a first capacitor provided between the first lower electrode and the first upper electrode, and a second capacitor provided between the first lower electrode and the second upper electrode.

Abstract: An image sensor device including: a first digital pixel including a first photodetector and first memory cells to store a first digital signal corresponding to a first output from the first photodetector; and a second digital pixel including a second photodetector and second memory cells to store a second digital signal corresponding to a second output from the second photodetector, the second digital pixel is adjacent to one side of the first digital pixel, the first memory cells and the second memory cells are connected with a plurality of bit lines, the first memory cells are connected with a first word line and a third word line, the second memory cells are connected with a second word line and a fourth word line, the second word line is between the first and third word lines, and the third word line is between the second and fourth word lines.

Abstract: An image sensor and a method for fabricating the same are provided. The image sensor includes a substrate including a first surface opposite a second surface that is incident to light, a first photoelectric conversion layer in the substrate, a wiring structure including a plurality of wiring layers on the first surface of the substrate, an interlayer insulating film on the second surface of the substrate, a capacitor structure in the interlayer insulating film, and a first wiring on the interlayer insulating film. The capacitor structure includes a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the second surface of the substrate. The second conductive pattern is connected to the first wiring.

Abstract: An image sensor device including: a first digital pixel including a first photodetector and first memory cells to store a first digital signal corresponding to a first output from the first photodetector; and a second digital pixel including a second photodetector and second memory cells to store a second digital signal corresponding to a second output from the second photodetector, the second digital pixel is adjacent to one side of the first digital pixel, the first memory cells and the second memory cells are connected with a plurality of bit lines, the first memory cells are connected with a first word line and a third word line, the second memory cells are connected with a second word line and a fourth word line, the second word line is between the first and third word lines, and the third word line is between the second and fourth word lines.

Abstract: A semiconductor device includes an address input circuit configured to boost a voltage level of at least one bit of a row address to generate a boosting address and to drive a signal of a first node based on other bits of the row address and the boosting address. The semiconductor device also includes a word line selection signal generation circuit configured to drive a signal of a second node based on the signal of the first node and to generate a word line selection signal for selecting a word line based on the signal of the second node.

Abstract: An image sensor is provided. The image sensor includes a substrate including a plurality of unit pixels, each of unit pixels includes a photoelectric conversion element; a first trench formed in the substrate in a lattice shape to isolate the plurality of unit pixels; a plurality of first capacitor structures extended along a sidewall of the first trench in the first trench, including a first electrode, a second electrode, and a first dielectric layer between the first electrode and the second electrode; and a first capacitor isolation pattern at a lattice point of the first trench to isolate the plurality of first capacitor structures.

Abstract: An electronic device includes an intelligent refresh control circuit generating an intelligent refresh pulse with a pulse that has a generation period that is adjusted based on the number of generations of an auto refresh signal during an intelligent refresh operation, and an internal refresh signal generation circuit outputting one of a self-refresh pulse including a pulse that is periodically generated by an enable signal during a self-refresh operation and the intelligent refresh pulse as an internal refresh signal.

Abstract: An image sensor comprises a first and second chips. The first chip includes a first semiconductor substrate, a photoelectric conversion layer in the first semiconductor substrate, a color filter, a micro lens, a first transistor adjacent to the photoelectric conversion layer, a first insulating layer, and a first metal layer in the first insulating layer and connected to the first transistor. The second chip includes a second insulating layer, a second semiconductor substrate, a second transistor on the second semiconductor substrate, a second metal layer in the second insulating layer and connected to a gate structure of the second transistor through a gate contact, a landing metal layer below the second metal layer, and a through via in direct contact with the landing metal layer and vertically passing through the second semiconductor substrate. A width of the through via becomes narrower as the width approaches the third surface.

Abstract: An electronic device includes an intelligent refresh control circuit generating an intelligent refresh pulse with a pulse that has a generation period that is adjusted based on the number of generations of an auto refresh signal during an intelligent refresh operation, and an internal refresh signal generation circuit outputting one of a self-refresh pulse including a pulse that is periodically generated by an enable signal during a self-refresh operation and the intelligent refresh pulse as an internal refresh signal.

Abstract: Disclosed are image sensors and methods of fabricating the same. The image sensor comprises a substrate including a plurality of pixels, a photoelectric conversion region in the substrate at each of the pixels, a gate electrode on the substrate at each of the pixels, an interlayer dielectric layer on the substrate and the gate electrode, and a contact penetrating the interlayer dielectric layer and on the gate electrode. The contact includes a lower part on the gate electrode and an upper part on the lower part and connected to a wiring line on the interlayer dielectric layer. A planar shape of the lower part of the contact is larger than that of the upper part of the contact.