Abstract: A semiconductor device including a via plug formed on a substrate and a metal layer for interconnection formed at an end of the via plug, wherein an insulating structure is under the metal layer for interconnection and the insulating structure has a different layered structure according to a positional relationship with the metal layer for interconnection is disclosed.

Abstract: An image sensing apparatus includes a first substrate structure, a second substrate structure, and a memory chip. The first substrate structure includes a pixel region having a photoelectric conversion element. The second substrate structure includes a first surface connected to the first substrate structure and a second surface opposite the first surface, and also includes a circuit region to drive the pixel region. The memory chip is mounted on the second surface of the second substrate structure. The first substrate structure and the second substrate structure are electrically connected by first connection vias passing through the first substrate structure. The second substrate structure and the memory chip are electrically connected by second connection vias passing through a portion of the second substrate structure. The first connection vias and the second connection vias are at different positions on a plane.

Abstract: An imaging device may include regions of active pixels, which are included in the generation of a photoelectric signal, and dummy pixels, which are not included in the generation of a photoelectric signal. Electrical characteristics of the dummy pixels may affect the photoelectric signal produced by the active pixels unless isolation is provided to reduce the electrical conductivity therebetween. An image sensor includes a substrate including an active pixel region and a dummy pixel region, a pixel isolation structure at least partially penetrating the substrate and configured to reduce electrical conductivity between an active pixel in the active pixel region and a dummy pixel in the dummy pixel region, and a dummy isolation structure at least partially penetrating the substrate of the dummy pixel region.

Abstract: Provided is an image sensor, which includes: a first substrate; a first structure on a front surface of the first substrate, the first structure including a first interlayer insulating layer surrounding a first conductive layer; a second substrate; a second structure on a front surface of the second substrate facing the front surface of the first substrate, the second structure including a second interlayer insulating layer, the second interlayer insulating layer being bonded to the first interlayer insulating layer; an organic photoelectric layer on a back surface of the second substrate; and a via electrode structure in contact with the first conductive layer through the second substrate and the second structure, the via electrode structure including an air gap therein.

Abstract: An image sensor includes a substrate having a photoelectric conversion element therein, a first via extending into a first surface of the substrate such that a first upper surface of the first via is exposed adjacent the first surface of the substrate, a second upper surface of the first via extending away from the first surface of the substrate, first to third insulating films sequentially stacked on the first surface of the substrate, and a contact extending through the first to third insulating films and into the second upper surface of the first via. The contact includes a first portion within the first via, a second portion in the first insulating film, a third portion in the second insulating film, and a fourth portion in the third insulating film.

Abstract: An image sensor and a method for fabricating the same are provided. The image sensor includes a substrate including a first surface opposite a second surface that is incident to light, a first photoelectric conversion layer in the substrate, a wiring structure including a plurality of wiring layers on the first surface of the substrate, an interlayer insulating film on the second surface of the substrate, a capacitor structure in the interlayer insulating film, and a first wiring on the interlayer insulating film. The capacitor structure includes a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the second surface of the substrate. The second conductive pattern is connected to the first wiring.

Abstract: An image sensing apparatus includes a first substrate structure, a second substrate structure, and a memory chip. The first substrate structure includes a pixel region having a photoelectric conversion element. The second substrate structure includes a first surface connected to the first substrate structure and a second surface opposite the first surface, and also includes a circuit region to drive the pixel region. The memory chip is mounted on the second surface of the second substrate structure. The first substrate structure and the second substrate structure are electrically connected by first connection vias passing through the first substrate structure. The second substrate structure and the memory chip are electrically connected by second connection vias passing through a portion of the second substrate structure. The first connection vias and the second connection vias are at different positions on a plane.

Abstract: An image sensor includes a pixel array and a peripheral circuit. The peripheral circuit is electrically connected to the pixel array and includes a logic block and at least one redundancy block to replace the logic block when the logic block is a defective block.

Abstract: Organic image sensors are provided. An organic image sensor includes a pixel electrode including a plurality of first electrodes spaced apart from each other. The organic image sensor includes an insulating region including a protruding portion that protrudes beyond surfaces of the plurality of first electrodes. The organic image sensor includes an organic photoelectric conversion layer on the pixel electrode and the protruding portion of the insulating region. Moreover, the organic image sensor includes a second electrode opposite the pixel electrode and on the organic photoelectric conversion layer.

Abstract: A semiconductor device including a via plug formed on a substrate and a metal layer for interconnection formed at an end of the via plug, wherein an insulating structure is under the metal layer for interconnection and the insulating structure has a different layered structure according to a positional relationship with the metal layer for interconnection is disclosed.

Abstract: An image sensing apparatus includes a first substrate structure, a second substrate structure, and a memory chip. The first substrate structure includes a pixel region having a photoelectric conversion element. The second substrate structure includes a first surface connected to the first substrate structure and a second surface opposite the first surface, and also includes a circuit region to drive the pixel region. The memory chip is mounted on the second surface of the second substrate structure. The first substrate structure and the second substrate structure are electrically connected by first connection vias passing through the first substrate structure. The second substrate structure and the memory chip are electrically connected by second connection vias passing through a portion of the second substrate structure. The first connection vias and the second connection vias are at different positions on a plane.

Abstract: An electronic device is provided. The electronic device includes a speaker configured to output a reference signal in the form of a sound and a processor configured to calculate a lowest resonant frequency from a signal sensed by feeding back the reference signal transmitted to the speaker and to determine whether the electronic device is waterproofed based on the calculated lowest resonant frequency.

Abstract: A device for upper-limb rehabilitation, which assists a user in exercising the arm for rehabilitation, has a connector, a placing unit movably connected to the connector, and a driving unit configured to move the connector, wherein when a user places the arm on the placing unit and moves the placing unit, the driving unit is operated to move the connector along the placing unit, so as to enlarge a work space in which the user is capable of moving the arm.

Abstract: The present invention relates to an unmanned aerial vehicle system having a multi-rotor type rotary wing. The unmanned aerial vehicle system having a multi-rotor type rotary wing includes a first unmanned aerial vehicle, at least one second unmanned aerial vehicle, and a bridge that connects the first unmanned aerial vehicle and the at least one second unmanned aerial vehicle to be separable from each other, wherein the at least one second unmanned aerial vehicle is moveable by the first unmanned aerial vehicle in a state where the at least one second unmanned aerial vehicle is coupled to the first unmanned aerial vehicle by the bridge without being driven, and the at least one second unmanned aerial vehicle is separable from the first unmanned aerial vehicle which is in flight.

Abstract: A device for upper-limb rehabilitation, which assists a user in exercising the arm for rehabilitation, has a connector, a placing unit movably connected to the connector, and a driving unit configured to move the connector, wherein when a user places the arm on the placing unit and moves the placing unit, the driving unit is operated to move the connector along the placing unit, so as to enlarge a work space in which the user is capable of moving the arm.

Abstract: A semiconductor system may include a first semiconductor device configured to output commands, addresses and data. The semiconductor system may include a second semiconductor device configured to convert a logic level combination of the data when only any one of bits of the data is a different logic level, and store the data in response to the commands and the addresses, in a write operation.

Abstract: A semiconductor system may include a first semiconductor device configured to output commands, addresses and data. The semiconductor system may include a second semiconductor device configured to convert a logic level combination of the data when only any one of bits of the data is a different logic level, and store the data in response to the commands and the addresses, in a write operation.

Abstract: An image sensor includes a pixel array and a peripheral circuit. The peripheral circuit is electrically connected to the pixel array and includes a logic block and at least one redundancy block to replace the logic block when the logic block is a defective block.

Abstract: An electronic device is provided. The electronic device includes a speaker configured to output a reference signal in the form of a sound and a processor configured to calculate a lowest resonant frequency from a signal sensed by feeding back the reference signal transmitted to the speaker and to determine whether the electronic device is waterproofed based on the calculated lowest resonant frequency.

Abstract: A 3D-capable image display device includes: a display panel having a plurality of pixels and a plurality of data lines; a gamma reference voltages generator for generating a plurality of gamma reference voltages including positive gamma reference voltages and negative gamma reference voltages; a data lines driver for converting an image signal into corresponding data line drive voltages based on the plurality of gamma reference voltages; and a signal controller operating according to a mode selection signal including information for selecting one of different 3D driving methods, wherein when a gap between the positive gamma reference voltages and the negative gamma reference voltages is referred to as a black gap, and size of the black gap is variable based on the selected 3D driving method.