Abstract: Disclosed are image sensors and methods of fabricating the same. The image sensor comprises a substrate including a plurality of pixels, a photoelectric conversion region in the substrate at each of the pixels, a gate electrode on the substrate at each of the pixels, an interlayer dielectric layer on the substrate and the gate electrode, and a contact penetrating the interlayer dielectric layer and on the gate electrode. The contact includes a lower part on the gate electrode and an upper part on the lower part and connected to a wiring line on the interlayer dielectric layer. A planar shape of the lower part of the contact is larger than that of the upper part of the contact.

Abstract: A method is described in which a plurality of magnetic field norms is obtained using a plurality of magnetic field sensor units, each of the plurality of magnetic field sensor units being arranged to measure a magnetic field at a different height while being mounted to an object, each of the plurality of magnetic field norms being a norm of the magnetic field measured by a corresponding one of the plurality of magnetic field sensor units; and the plurality of magnetic field norms is matched with a magnetic field map of an indoor area including a plurality of sub-areas to estimate a location of the object as one of the plurality of sub-areas.

Abstract: Discussed are an apparatus for measuring a thickness of a unit cell of a battery, and a method of measuring the thickness of the unit cell of the battery. The apparatus includes a plurality of transfer rollers configured to sequentially transfer unit cells, and disposed to be the plurality of transfer rollers being spaced a predetermined distance from each other; and a thickness sensor disposed at a fixed position to irradiate light to a moving path of the unit cells and calculate a time when receiving taken to receive the light that is reflected light from the unit cells, thereby measuring a thickness of each of the unit cells.

Abstract: An image sensor and a method of fabricating the same, the image sensor including a semiconductor substrate having a first surface and a second surface facing each other; a first photoelectric conversion part disposed on the second surface of the semiconductor substrate; a first floating diffusion region provided in the semiconductor substrate adjacent to the first surface; a first interlayered insulating layer covering the first surface; a first channel pattern on the first interlayered insulating layer; and a first transfer gate electrode disposed adjacent to the first channel pattern and that controls transfer of charge generated in the first photoelectric conversion part to the first floating diffusion region through the first channel pattern.

Abstract: An image sensor includes: a substrate including a first surface and a second surface on which light is incident, the second surface being opposite to the first surface; a photoelectric converter provided in the substrate; a first metal layer provided on the first surface of the substrate; a second metal layer provided on the first metal layer; and a capacitor layer provided between the first metal layer and the second metal layer, wherein the capacitor layer includes: a first lower electrode electrically connected to the first metal layer, a first upper electrode electrically connected to the second metal layer, a second upper electrode spaced apart from the first upper electrode and electrically connected to the second metal layer, a first capacitor provided between the first lower electrode and the first upper electrode, and a second capacitor provided between the first lower electrode and the second upper electrode.

Abstract: An image sensor and a method for fabricating the same are provided. The image sensor includes a substrate including a first surface opposite a second surface that is incident to light, a first photoelectric conversion layer in the substrate, a wiring structure including a plurality of wiring layers on the first surface of the substrate, an interlayer insulating film on the second surface of the substrate, a capacitor structure in the interlayer insulating film, and a first wiring on the interlayer insulating film. The capacitor structure includes a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the second surface of the substrate. The second conductive pattern is connected to the first wiring.

Abstract: An image sensor and a method for fabricating the same are provided. The image sensor includes a substrate including a first surface opposite a second surface that is incident to light, a first photoelectric conversion layer in the substrate, a wiring structure including a plurality of wiring layers on the first surface of the substrate, an interlayer insulating film on the second surface of the substrate, a capacitor structure in the interlayer insulating film, and a first wiring on the interlayer insulating film. The capacitor structure includes a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the second surface of the substrate. The second conductive pattern is connected to the first wiring.

Abstract: Organic image sensors are provided. An organic image sensor includes a pixel electrode including a plurality of first electrodes spaced apart from each other. The organic image sensor includes an insulating region including a protruding portion that protrudes beyond surfaces of the plurality of first electrodes. The organic image sensor includes an organic photoelectric conversion layer on the pixel electrode and the protruding portion of the insulating region. Moreover, the organic image sensor includes a second electrode opposite the pixel electrode and on the organic photoelectric conversion layer.

Abstract: An image sensor includes a substrate having a photoelectric conversion element therein, a first via extending into a first surface of the substrate such that a first upper surface of the first via is exposed adjacent the first surface of the substrate, a second upper surface of the first via extending away from the first surface of the substrate, first to third insulating films sequentially stacked on the first surface of the substrate, and a contact extending through the first to third insulating films and into the second upper surface of the first via. The contact includes a first portion within the first via, a second portion in the first insulating film, a third portion in the second insulating film, and a fourth portion in the third insulating film.

Abstract: A method is described in which a plurality of magnetic field norms is obtained using a plurality of magnetic field sensor units, each of the plurality of magnetic field sensor units being arranged to measure a magnetic field at a different height while being mounted to an object, each of the plurality of magnetic field norms being a norm of the magnetic field measured by a corresponding one of the plurality of magnetic field sensor units; and the plurality of magnetic field norms is matched with a magnetic field map of an indoor area including a plurality of sub-areas to estimate a location of the object as one of the plurality of sub-areas.

Abstract: An imaging device may include regions of active pixels, which are included in the generation of a photoelectric signal, and dummy pixels, which are not included in the generation of a photoelectric signal. Electrical characteristics of the dummy pixels may affect the photoelectric signal produced by the active pixels unless isolation is provided to reduce the electrical conductivity therebetween. An image sensor includes a substrate including an active pixel region and a dummy pixel region, a pixel isolation structure at least partially penetrating the substrate and configured to reduce electrical conductivity between an active pixel in the active pixel region and a dummy pixel in the dummy pixel region, and a dummy isolation structure at least partially penetrating the substrate of the dummy pixel region.

Abstract: An image sensing apparatus includes a first substrate structure, a second substrate structure, and a memory chip. The first substrate structure includes a pixel region having a photoelectric conversion element. The second substrate structure includes a first surface connected to the first substrate structure and a second surface opposite the first surface, and also includes a circuit region to drive the pixel region. The memory chip is mounted on the second surface of the second substrate structure. The first substrate structure and the second substrate structure are electrically connected by first connection vias passing through the first substrate structure. The second substrate structure and the memory chip are electrically connected by second connection vias passing through a portion of the second substrate structure. The first connection vias and the second connection vias are at different positions on a plane.

Abstract: An image sensor device including: a first digital pixel including a first photodetector and first memory cells to store a first digital signal corresponding to a first output from the first photodetector; and a second digital pixel including a second photodetector and second memory cells to store a second digital signal corresponding to a second output from the second photodetector, the second digital pixel is adjacent to one side of the first digital pixel, the first memory cells and the second memory cells are connected with a plurality of bit lines, the first memory cells are connected with a first word line and a third word line, the second memory cells are connected with a second word line and a fourth word line, the second word line is between the first and third word lines, and the third word line is between the second and fourth word lines.

Abstract: Provided is an image sensor, which includes: a first substrate; a first structure on a front surface of the first substrate, the first structure including a first interlayer insulating layer surrounding a first conductive layer; a second substrate; a second structure on a front surface of the second substrate facing the front surface of the first substrate, the second structure including a second interlayer insulating layer, the second interlayer insulating layer being bonded to the first interlayer insulating layer; an organic photoelectric layer on a back surface of the second substrate; and a via electrode structure in contact with the first conductive layer through the second substrate and the second structure, the via electrode structure including an air gap therein.

Abstract: The present invention relates to an unmanned aerial vehicle system having a multi-rotor type rotary wing. The unmanned aerial vehicle system having a multi-rotor type rotary wing includes a first unmanned aerial vehicle, at least one second unmanned aerial vehicle, and a bridge that connects the first unmanned aerial vehicle and the at least one second unmanned aerial vehicle to be separable from each other, wherein the at least one second unmanned aerial vehicle is moveable by the first unmanned aerial vehicle in a state where the at least one second unmanned aerial vehicle is coupled to the first unmanned aerial vehicle by the bridge without being driven, and the at least one second unmanned aerial vehicle is separable from the first unmanned aerial vehicle which is in flight.

Abstract: An image sensor and a method of fabricating the same, the image sensor including a semiconductor substrate having a first surface and a second surface facing each other; a first photoelectric conversion part disposed on the second surface of the semiconductor substrate; a first floating diffusion region provided in the semiconductor substrate adjacent to the first surface; a first interlayered insulating layer covering the first surface; a first channel pattern on the first interlayered insulating layer; and a first transfer gate electrode disposed adjacent to the first channel pattern and that controls transfer of charge generated in the first photoelectric conversion part to the first floating diffusion region through the first channel pattern.

Abstract: A semiconductor device including a via plug formed on a substrate and a metal layer for interconnection formed at an end of the via plug, wherein an insulating structure is under the metal layer for interconnection and the insulating structure has a different layered structure according to a positional relationship with the metal layer for interconnection is disclosed.

Abstract: An image sensing apparatus includes a first substrate structure, a second substrate structure, and a memory chip. The first substrate structure includes a pixel region having a photoelectric conversion element. The second substrate structure includes a first surface connected to the first substrate structure and a second surface opposite the first surface, and also includes a circuit region to drive the pixel region. The memory chip is mounted on the second surface of the second substrate structure. The first substrate structure and the second substrate structure are electrically connected by first connection vias passing through the first substrate structure. The second substrate structure and the memory chip are electrically connected by second connection vias passing through a portion of the second substrate structure. The first connection vias and the second connection vias are at different positions on a plane.

Abstract: An imaging device may include regions of active pixels, which are included in the generation of a photoelectric signal, and dummy pixels, which are not included in the generation of a photoelectric signal. Electrical characteristics of the dummy pixels may affect the photoelectric signal produced by the active pixels unless isolation is provided to reduce the electrical conductivity therebetween. An image sensor includes a substrate including an active pixel region and a dummy pixel region, a pixel isolation structure at least partially penetrating the substrate and configured to reduce electrical conductivity between an active pixel in the active pixel region and a dummy pixel in the dummy pixel region, and a dummy isolation structure at least partially penetrating the substrate of the dummy pixel region.

Abstract: Provided is an image sensor, which includes: a first substrate; a first structure on a front surface of the first substrate, the first structure including a first interlayer insulating layer surrounding a first conductive layer; a second substrate; a second structure on a front surface of the second substrate facing the front surface of the first substrate, the second structure including a second interlayer insulating layer, the second interlayer insulating layer being bonded to the first interlayer insulating layer; an organic photoelectric layer on a back surface of the second substrate; and a via electrode structure in contact with the first conductive layer through the second substrate and the second structure, the via electrode structure including an air gap therein.