Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a gate stack over the semiconductor substrate. The gate stack includes a gate dielectric layer and a work function layer. The gate dielectric layer is between the semiconductor substrate and the work function layer. The semiconductor device structure also includes a halogen source layer. The gate dielectric layer is between the semiconductor substrate and the halogen source layer.

Abstract: A method of forming a semiconductor structure includes depositing a mask layer over a substrate. The method includes etching the substrate to define a first opening. The method includes depositing a sacrificial material in the first opening. The method includes depositing a dielectric liner along sidewalls of the first opening, wherein a bottom surface of the dielectric liner contacts the sacrificial material. The method includes removing the sacrificial material. The method includes etching the substrate to enlarge the first opening to define a second opening. The second opening includes a first portion extending a first depth from the dielectric material in a first direction perpendicular to a top surface of the substrate, and a second portion extending in a second direction, parallel to the top surface of the substrate. The method includes removing the dielectric liner. The method includes filling the second opening with a dielectric material.

Abstract: Structures and formation methods of a semiconductor device structure are provided. The method includes forming a dummy fin structure, and forming a mask layer covering the dummy fin structure. The method also includes removing a portion of the mask layer and a top portion of the dummy fin structure by a first etching operation to form an etched mask layer, wherein the dummy fin structure has a protruding portion protruding from a top surface of the etched mask layer after the first etching operation.

Abstract: A driving method suitable for a head mounted device (HMD) is provided. The driving method includes the following operations: moving a first image capture unit and a second image capture unit of the HMD to respectively capture two left-eye images and two right-eye images; calculating a first eye relief according to at least one left-eye feature in the two left-eye images; calculating a second eye relief according to at least one right-eye feature in the two right-eye images; calculating an interpupillary distance (IPD) according to the first eye relief and the second eye relief; and adjusting, according to the IPD, a distance between a first lens and a second lens of the HMD.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first source region, a second source region, a first drain region, and a second drain region. The semiconductor device structure includes a first gate structure over the substrate and between the first source region and the first drain region. The semiconductor device structure includes a second gate structure over the substrate and between the second source region and the second drain region. A first thickness of the first gate structure is greater than a second thickness of the second gate structure. A first gate width of the first gate structure is less than a second gate width of the second gate structure.

Abstract: The semiconductor device includes a substrate, an epi-layer, a first etch stop layer, an interlayer dielectric (ILD) layer, a second etch stop layer, a protective layer, a liner, a silicide cap and a contact plug. The substrate has a first portion and a second portion. The epi-layer is disposed in the first portion. The first etch stop layer is disposed on the second portion. The ILD layer is disposed on the first etch stop layer. The second etch stop layer is disposed on the ILD layer, in which the first etch stop layer, the ILD layer and the second etch stop layer form a sidewall surrounding the first portion. The protective layer is disposed on the sidewall. The liner is disposed on the protective layer. The silicide cap is disposed on the epi-layer. The contact plug is disposed on the silicide cap and surrounded by the liner.

Abstract: The present disclosure relates to a method for providing biomarker for early detection of Alzheimer's Disease (AD), and particularly to a method that is able to enhance the accuracy of predicting AD from Mild Cognitive Impairment (MCI) patients using the Hippocampus magnetic resonance imaging (MRI) scans and Mini-Mental State Examination (MMSE) data. The providing MRI images containing the anatomical structure of Hippocampus biomarker and MMSE data as a training data set; training a processor using the training data set, and the training comprising acts of receiving MRI images and MMSE data as a testing data set from a target; and classifying the test data by the trained processor to include aggregating predictions.

Abstract: A sound reproducing method used in sound reproducing apparatus that includes the steps outlined below is provided. An input sound signal related to listener data and sound source data is received. An encoding process is performed by multiplying the input sound signal by an encoding function matrix having entries related to a basis function to generate an encoding result. A decoding function matrix is retrieved from the storage and at least one direction parameter is applied to the decoding function matrix, wherein the decoding function matrix compensates a difference between an ideal approximation result and a modeled approximation result of the input sound signal. A decoding process is performed by multiplying the encoding result by the decoding function matrix having the direction parameter applied to generate an output sound signal. The output sound signal is reproduced.

Abstract: A method for controlling a user interface of an electronic device by providing for the benefit of a user a projection of an operating interface includes a projection device to project an operating interface on a surface and controlling a detecting device to detect control operations on the projected interface by the user. A type of the user's control operation is determined, wherein the types of the control operations can include gestures and touch operations. The electronic device is controlled to perform a function in response to the touch operation or the gesture operation.

Abstract: A driving method suitable for a head mounted device (HMD) is provided. The driving method includes the following operations: moving a first image capture unit and a second image capture unit of the HMD to respectively capture two left-eye images and two right-eye images; calculating a first eye relief according to at least one left-eye feature in the two left-eye images; calculating a second eye relief according to at least one right-eye feature in the two right-eye images; calculating an interpupillary distance (IPD) according to the first eye relief and the second eye relief; and adjusting, according to the IPD, a distance between a first lens and a second lens of the HMD.

Abstract: A method of manufacturing a semiconductor device includes forming a first transistor structure and a second transistor structure on a substrate, wherein source/drain structures of the first transistor structure and the second transistor structure are merged. The first and second transistor structures are separated by etching the source/drain structures.

Abstract: Provided is a semiconductor device including a substrate, a gate structure, a dielectric layer, an etch stop layer, and an adhesion layer. The gate structure is formed over the substrate. The dielectric layer is formed aside the gate structure. The adhesion layer overlays a top surface of the gate structure and extends to a first top surface of the dielectric layer. The etch stop layer is over the adhesion layer and in contact with a second top surface of the dielectric layer.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a metal gate electrode structure and an insulating layer over the semiconductor substrate. The insulating layer surrounds the metal gate electrode structure. The method includes nitrifying a first top portion of the metal gate electrode structure to form a metal nitride layer over the metal gate electrode structure.

Abstract: A sound reproducing method used in sound reproducing apparatus that includes the steps outlined below is provided. A sound signal is generated with a 3D sound generating process according to listener data and sound data. Pre-recorded sound data is retrieved to further generate a target distance function corresponding to the sound distance. A fixed head-related transfer function corresponding to a fixed distance is retrieved. A target head-related transfer function corresponding to the sound distance is generated by adapting the target distance function to the fixed head-related transfer function. The sound signal is reproduced by multiplying the sound signal by the target head-related transfer function.

Abstract: Structures and formation methods of a semiconductor device structure are provided. The method includes forming a dummy fin structure, and forming a mask layer covering the dummy fin structure. The method also includes removing a portion of the mask layer and a top portion of the dummy fin structure by a first etching operation to form an etched mask layer, wherein the dummy fin structure has a protruding portion protruding from a top surface of the etched mask layer after the first etching operation.

Abstract: A PAM (Pulse Amplitude Modulation) modulator driver is configured to receive a PAM input signal having N input amplitude levels and provide a PAM output signal having N output amplitude levels, where N is an integer. The PAM modulator driver circuit configured to electrically adjust amplitude levels in the PAM output signal.

Abstract: A semiconductor device includes an active area having source and drain regions and a channel region between the source and drain regions, an isolation structure surrounding the active area, and a gate structure over the channel region of the active area and over the isolation structure, wherein the isolation structure has a first portion under the gate structure and a second portion free from coverage by the gate structure, and a top of the first portion of the isolation structure is lower than a top of the second portion of the isolation structure.

Abstract: In a method of manufacturing a semiconductor device, a fin structure is formed over a substrate. The fin structure has a channel region and a source/drain region. A gate structure is formed over the channel region of the fin structure. A first source/drain etching is performed to recess the source/drain region of the fin structure. After the first source/drain etching, a second source/drain etching is performed to further recess the source/drain region of the fin structure. After the second source/drain etching, a third source/drain etching is performed to further recess the source/drain region of the fin structure, thereby forming a source/drain recess. One or more epitaxial layers are formed in the source/drain recess. The first source/drain etching is isotropic etching and the second source/drain etching is anisotropic etching.

Abstract: Some embodiments relate to a semiconductor device. The semiconductor device includes a layer disposed over a substrate. A conductive body extends through the layer. A plurality of bar or pillar structures are spaced apart from one another and laterally surround the conductive body. The plurality of bar or pillar structures are generally concentric around the conductive body.

Abstract: A method of forming a semiconductor structure includes depositing a mask layer over a substrate. The method includes etching the substrate to define a first opening. The method includes depositing a sacrificial material in the first opening. The method includes depositing a dielectric liner along sidewalls of the first opening, wherein a bottom surface of the dielectric liner contacts the sacrificial material. The method includes removing the sacrificial material. The method includes etching the substrate to enlarge the first opening to define a second opening. The second opening includes a first portion extending a first depth from the dielectric material in a first direction perpendicular to a top surface of the substrate, and a second portion extending in a second direction, parallel to the top surface of the substrate. The method includes removing the dielectric liner. The method includes filling the second opening with a dielectric material.