Abstract: A gate driver includes a first scan signal generator configured to output a logic voltage for driving of a scan transistor through a plurality of stages connected in cascade, the scan transistor performing a switching operation to transfer a data voltage to a driving transistor of a pixel, a second scan signal generator configured to output a logic voltage for driving of a sensing transistor through the plurality of stages, the sensing transistor sensing deterioration of a light emitting element of the pixel, a light emission control signal generator configured to output a logic voltage for control of a light emission control transistor of the pixel through the plurality of stages, and an initialization voltage generator driven by logic voltages received from some nodes of the first scan signal generator based on the light emission control signal generator to supply an initialization voltage to the pixel.

Abstract: The present disclosure relates to a method for predicting prognosis of cancer and a composition thereof. More specifically, the present disclosure relates to a composition and a method for predicting prognosis of breast cancer and predicting the treatment effect of chemotherapy. The present disclosure provides gene expression information useful for predicting whether a cancer patient is more likely to respond favorably to treatment in chemotherapy.

Abstract: An apparatus for automated valet parking includes a transceiver and a processor. The transceiver is configured to receive vehicle information from a vehicle and transmit a target position and a guide route to the vehicle. The processor is configured to determine a parking policy based on the vehicle information received and parking lot information stored and to determine the target position and the guide route based on the determined parking policy.

Abstract: A semiconductor device is provided. The semiconductor device includes a clock gate line supplying a clock signal, an inverted clock gate line disposed in parallel to the clock gate line and supplying an inverted clock signal, a first latch circuit performing a first latch operation based on the clock signal and the inverted clock signal and a second latch circuit disposed on a side of the first latch circuit in a first direction, receiving an output of the first latch circuit, and operating based on the clock signal and the inverted clock, wherein the clock gate line and the inverted clock gate line extend in the first direction and are shared by the first and second latch circuits.

Abstract: A semiconductor circuit and a layout system of the semiconductor circuit, the semiconductor circuit including a latch; a feedback inverter that receives an output signal of the latch via a first node and provides a feedback signal to the latch responsive to the output signal of the latch; and an output driver which receives the output signal of the latch via the first node and provides an output signal externally of the semiconductor circuit. The output driver includes an even number of inverters, and the latch, the feedback inverter, and the output driver share a single active region formed without isolation.

Abstract: A semiconductor device including a memory device which has improved reliability is provided. The semiconductor device comprises at least one data pin configured to transfer a data signal, at least one command address pin configured to transfer a command and an address, at least one serial pin configured to transfer a serial data signal, and processing circuitry connected to the at least one data pin and the at least one serial pin. The processing circuitry is configured to receive the data signal from outside through the at least one data pin, and the processing circuitry is configured to output the serial data signal through the at least one serial pin in response to the received data signal.

Abstract: An electronic device including a memory device with improved reliability is provided. The semiconductor device comprises a data pin configured to transmit a data signal, a command/address pin configured to transmit a command and an address, a command/address receiver connected to the command/address pin, and a computing unit connected to the command/address receiver, wherein the command/address receiver receives a first command and a first address from the outside through the command/address pin and generates a first instruction on the basis of the first command and the first address, and the computing unit receives the first instruction and performs computation based on the first instruction.

Abstract: A touch display device for preventing the occurrence of a short circuit between routing lines is disclosed. The touch display device includes a dam forming a boundary with an encapsulation unit covering a light-emitting element, and the dam is formed such that the height thereof in a region that overlaps routing lines, which are connected to touch electrodes disposed on the encapsulation unit, and the height thereof in a region that does not overlap the routing lines are different from each other, thereby preventing the occurrence of a short circuit between the routing lines.

Abstract: A gate driver includes a first scan signal generator configured to output a logic voltage for driving of a scan transistor through a plurality of stages connected in cascade, the scan transistor performing a switching operation to transfer a data voltage to a driving transistor of a pixel, a second scan signal generator configured to output a logic voltage for driving of a sensing transistor through the plurality of stages, the sensing transistor sensing deterioration of a light emitting element of the pixel, a light emission control signal generator configured to output a logic voltage for control of a light emission control transistor of the pixel through the plurality of stages, and an initialization voltage generator driven by logic voltages received from some nodes of the first scan signal generator based on the light emission control signal generator to supply an initialization voltage to the pixel.

Abstract: A method of controlling gear shifting in an electric vehicle includes: determining whether or not an electric vehicle travels in an electric vehicle (EV) traveling mode; determining whether or not kick-down gear shifting is required in the EV traveling mode; determining whether or not acceleration linearity control is possible, in a case where the kick-down gear shifting is required; performing correction of a torque of a motor in a case where the acceleration linearity control is possible; and performing gear shifting in a transmission on the basis of the corrected torque of the motor.

Abstract: A semiconductor device includes a first active region, a second active region, a first gate line disposed to overlap the first and second active regions, a second gate line disposed to overlap the first and second active regions, a first metal line electrically connecting the first and second gate lines and providing a first signal to both the first and second gate lines, a first contact structure electrically connected to part of the first active region between the first and second gate lines, a second contact structure electrically connected to part of the second active region between the first and second gate lines, and a second metal line electrically connected to the first and second contact structures and transmitting a second signal, wherein an overlapped region that is overlapped by the second metal line does not include a break region.

Abstract: A method of detecting a urine test strip from a photographed image of the urine test strip is disclosed. The disclosed method of detecting a urine test strip includes: receiving input of a urine test strip image, which is a photographed image of a urine test strip including a first and a second marker; detecting a first and a second marker image within the urine test strip image; detecting an area between the first and second marker images within the urine test strip image; and detecting a reagent pad and a colorimetric table in the urine test strip image by matching an area of interest, which represents a position of the reagent pad and the colorimetric table in the urine test strip image, with the area between the first and second marker images.

Abstract: A semiconductor circuit may include a first flip-flop configured to output a first input data as a first output signal in response to an inverted input clock signal, a second flip-flop configured to output a second input data as a second output signal in response to an input clock signal, a glitch-free circuit configured to receive the inverted input clock signal, the input clock signal, the first output signal, and the second output signal, and to determine a voltage level of a node on the basis of the inverted input clock signal, the input clock signal, the first output signal, and the second output signal, and an inverter configured to output an output clock signal obtained by inverting the voltage level of the node determined by the glitch-free circuit. The glitch-free circuit does not include a transistor having a gate connected to the node.

Abstract: A memory device includes: a memory cell array; a control logic circuit; and a row decoder. The row decoder is configured to activate string selection lines based on control of the control logic circuit. A program interval is formed between a first program operation and a second program operation. The control logic circuit includes a reprogram controller configured to control the row decoder so that a program interval differs in the memory cells connected to different string selection lines among the memory cells connected to a first wordline.

Abstract: A semiconductor device is provided. The semiconductor device includes a first hard macro; a second hard macro spaced apart from the first hard macro in a first direction by a first distance; a head cell disposed in a standard cell area between the first hard macro and the second hard macro, the head cell being configured to perform power gating of a power supply voltage provided to one from among the first hard macro and the second hard macro; a plurality of first ending cells disposed in the standard cell area adjacent to the first hard macro; and a plurality of second ending cells disposed in the standard cell area adjacent to the second hard macro, the head cell not overlapping the plurality of first ending cells and the plurality of second ending cells.

Abstract: A mobility hub is composed of a plurality of layers and serves as a terminal of a ground mobility and an air mobility. The mobility hub includes: a ground layer provided with an entrance of the ground mobility; a port layer provided with a taking-off and landing site of the air mobility; and a middle layer provided between the ground layer and the port layer. The middle layer has the ground mobility elevating in a space with the ground layer, is provided with a plurality of connection slots to which the ground mobility is connected, and provides an activity space through the ground mobility if the ground mobility is coupled to the connection slot.

Abstract: A semiconductor device includes a first active region, a second active region, a first gate line disposed to overlap the first and second active regions, a second gate line disposed to overlap the first and second active regions, a first metal line electrically connecting the first and second gate lines and providing a first signal to both the first and second gate lines, a first contact structure electrically connected to part of the first active region between the first and second gate lines, a second contact structure electrically connected to part of the second active region between the first and second gate lines, and a second metal line electrically connected to the first and second contact structures and transmitting a second signal, wherein an overlapped region that is overlapped by the second metal line does not include a break region.

Abstract: A touch display device for preventing the occurrence of a short circuit between routing lines is disclosed. The touch display device includes a dam forming a boundary with an encapsulation unit covering a light-emitting element, and the dam is formed such that the height thereof in a region that overlaps routing lines, which are connected to touch electrodes disposed on the encapsulation unit, and the height thereof in a region that does not overlap the routing lines are different from each other, thereby preventing the occurrence of a short circuit between the routing lines.

Abstract: A memory device includes a plurality of latches arranged in a plurality of columns including a first column and a second column and in a plurality of rows, a first flip flop configured to output first data, to first latches arranged in the first column, among the plurality of latches, based on a clock, and a second flip flop configured to output second data, to second latches arranged in the second column, among the plurality of latches, based on the clock. The first flip flop is further configured to, in a lock time section in which the first latches and the second latches maintain an output regardless of an input, block output of the first data to the first latches, and the second flip flop is further configured to, in the lock time section, block output of the second data to the second latches.

Abstract: A semiconductor device includes a scan input circuit, a master latch, a slave latch, a first inverter, and a scan output circuit. The scan input circuit is configured to receive a scan input signal, a first data signal, and a scan enable signal and select any one of the first data signal and the scan input signal in response to the scan enable signal to output a first select signal. The master latch is configured to latch the first select signal and output a first output signal. The slave latch is configured to latch the first output signal and output a second output signal. The first inverter is configured to invert the second output signal. The scan output circuit is configured to receive a signal output from the slave latch and an external signal and output a first scan output signal.