Abstract: A light emitting device with an electron blocking combination layer comprises an active layer, an n-type GaN layer, a p-type GaN layer, and an electron blocking combination layer which has two Group III-V semiconductor layers with different band gaps that can be deposited periodically and repeatedly on the active layer to block overflowing electrons from the active layers.

Abstract: A method of removing a substrate structure is described. A plurality of pillars is formed on a substrate by using a photolithography etching process. A group III nitride semiconductor layer is grown on the plurality of pillars. The plurality of pillars is etched to separate the group III nitride semiconductor layer from the substrate by using a chemical etching process.

Abstract: A gallium nitride-based light emitting device with a roughened surface is described. The light emitting device comprises a substrate, a buffer layer grown on the substrate, an n-type III-nitride semiconductor layer grown on the buffer layer, a III-nitride semiconductor active layer grown on the n-type III-nitride semiconductor layer, a first p-type III-nitride semiconductor layer grown on the III-nitride semiconductor active layer, a heavily doped p-type III semiconductor layer grown on the first p-type III-nitride semiconductor, and a roughened second p-type III-nitride semiconductor layer grown on the heavily doped p-type III semiconductor layer.

Abstract: A semiconductor device fabrication method is disclosed. A buffer layer is provided and a first semiconductor layer is formed on the buffer layer. Next, a first intermediate layer is formed on the first semiconductor layer by dopant with high concentration during an epitaxial process. A second semiconductor layer is overlaid on the first intermediate layer. A semiconductor light emitting device is grown on the second semiconductor layer. The formation of the intermediate layer and the second semiconductor layer is a set of steps.

Abstract: A method for separating a semiconductor from a substrate is disclosed. The method comprises the following steps: forming a plurality of columns on a substrate; epitaxially growing a semiconductor on the plurality of columns; and injecting etching liquid into the void among the plurality of columns so as to separate the semiconductor from the substrate. The method of this invention can enhance the etching efficiency of separating the semiconductor from the substrate and reduce the fabrication cost because the etching area is increased due to the void among the plurality of columns. In addition, the method will not confine the material of the above-mentioned substrate.

Abstract: A manufacturing method of a semiconductor device comprises the steps of: providing a substrate; forming a plurality of grooves on the substrate by photolithograph etching or laser engraving, wherein the plurality of grooves divides a surface of the substrate into a plurality of mesas and the substrate is a patterned substrate; and growing a semiconductor device (e.g. photo-electronic device or LED) on the patterned substrate. The semiconductor device comprises at least one layer, wherein the layer directly disposed on the patterned substrate is the first layer. The first layer comprises a plurality of separated regions divided by the grooves.

Abstract: A method of fabricating a photoelectric device of Group III nitride semiconductor comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of an original substrate; forming a patterned epitaxial-blocking layer on the first Group III nitride semiconductor layer; forming a second Group III nitride semiconductor layer on the epitaxial-blocking layer and the first Group III nitride semiconductor layer not covered by the epitaxial-blocking layer and then removing the epitaxial-blocking layer; forming a third Group III nitride semiconductor layer on the second Group III nitride semiconductor layer; depositing or adhering a conductive layer on the third Group III nitride semiconductor layer; and releasing a combination of the third Group III nitride semiconductor layer and the conductive layer apart from the second Group III nitride semiconductor layer.

Abstract: A container includes a containing body, a moving rod component held in the body, a base joined on a lower end of the body, a pressing member positioned on a top of the body and joined to the moving rod component, and a compressible elastic element to bias the pressing member upwards; the base has a tapering dispensing hole; the moving rod component has a connecting element on a lower portion, which has substantially the same diameter as the smallest portion of the dispensing hole, and usually blocks the dispensing hole, and which will move out of the dispensing hole to allow seasoning powder to fall through the dispensing hole when the pressing member is depressed; the moving rod component has a stirring spring positioned therearound, which will move together with the moving rod component to prevent seasoning powder in the containing body from sticking together to form large lumps.

Abstract: A method of fabricating a photoelectric device of Group III nitride semiconductor, where the method comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of a temporary substrate; patterning the first Group III nitride semiconductor layer using photolithography and etching processes; forming a second Group III nitride semiconductor layer on the patterned first Group III nitride semiconductor layer; forming a conductive layer on the second Group III nitride semiconductor layer; and releasing the temporary substrate by removing the first Group III nitride semiconductor layer to obtain a composite of the second Group III nitride semiconductor layer and the conductive layer.

Abstract: A light-emitting device of Group III nitride-based semiconductor comprises a substrate, a first Group III nitride layer and a second Group III nitride layer. The substrate comprises a first surface and a plurality of convex portions protruding from the first surface. Each convex portion is surrounded by a part of the first surface. The first Group III nitride layer is jointly formed by lateral growth starting at top surfaces of the convex portions. The second Group III nitride layer is formed on the first surface, wherein a thickness of the second Group III nitride layer is less than a height of the convex portion. Moreover, the first Group III nitride layer and the second Group III nitride layer are made of a same material.

Abstract: A semiconductor light-emitting device comprises a substrate, a buffer layer, an n-type semiconductor layer, a conformational active layer and a p-type semiconductor layer. The n-type semiconductor layer includes a first surface and a second surface, and the first surface directly contacts the buffer layer. The second surface has a plurality of recesses, and a conformational active layer formed on the second surface and within the plurality of recesses. Therefore, the stress between the n-type semiconductor layer and the conformational active layer can be released with the recesses.

Abstract: A seasoning can for holding and dispensing seasonings includes a shell to contain seasonings, and a slip-prevention layer adhered to at least a portion of an outer side of the shell; the shell has a smooth surface; the slip-prevention layer comprises a film made of rubber paint, and is made by means of spraying rubber paint on the outer side of the shell; the slip-prevention layer has a high frictional coefficient so as to increase friction between the slip-prevention layer and the user's hands/fingers.

Abstract: A calibration circuit for voltage-controlled oscillator (VCO) includes a calibration bias generator, a VCO, a detection unit, a micro control unit, an adjuster unit, a phase-locked loop (PLL) unit, a control voltage detection unit, and a control switch set. The calibration bias generator outputs a first control voltage. The VCO outputs an oscillation frequency according to the first control voltage. The detection unit detects the oscillation frequency and outputs the detection result signal to the micro control unit. The micro control unit outputs an adjust signal according to the detection result signal. The adjuster unit receives the adjust signal voltage and adjusts the oscillation frequency output from the VCO according to the adjust signal voltage. The PLL unit outputs a second control voltage to the VCO. The control voltage detection unit outputs voltage-detection signal to the micro control unit, which outputs the adjust signal according to the voltage-detection signal.

Abstract: A voltage controlled oscillator (VCO), suitable for use in a frequency shift keying (FSK) system. The VCO device comprises a switching varactor unit, having a first terminal and a second terminal, wherein the switching varactor unit produces a capacitance, according to a frequency-selection voltage. A VCO core has a first output terminal, a second output terminal complementary to the first output terminal, and an input terminal. Wherein, the switching varactor unit is coupled in parallel with the VCO core at the first output terminal and the second output terminal to produce a capacitance effect with respect to the capacitance, so as to adjust a frequency constant ?{square root over (LC)} of the VCO core.

Abstract: A calibration circuit for voltage-controlled oscillator (VCO) includes a calibration bias generator, a VCO, a detection unit, a micro control unit, an adjuster unit, a phase-locked loop (PLL) unit, a control voltage detection unit, and a control switch set. The calibration bias generator outputs a first control voltage. The VCO outputs an oscillation frequency according to the first control voltage. The detection unit detects the oscillation frequency and outputs the detection result signal to the micro control unit. The micro control unit outputs an adjust signal according to the detection result signal. The adjuster unit receives the adjust signal voltage and adjusts the oscillation frequency output from the VCO according to the adjust signal voltage. The PLL unit outputs a second control voltage to the VCO. The control voltage detection unit outputs voltage-detection signal to the micro control unit, which outputs the adjust signal according to the voltage-detection signal.

Abstract: A voltage controlled oscillator (VCO), suitable for use in a frequency shift keying (FSK) system. The VCO device comprises a switching varactor unit, having a first terminal and a second terminal, wherein the switching varactor unit produces a capacitance, according to a frequency-selection voltage. A VCO core has a first output terminal, a second output terminal complementary to the first output terminal, and an input terminal. Wherein, the switching varactor unit is coupled in parallel with the VCO core at the first output terminal and the second output terminal to produce a capacitance effect with respect to the capacitance, so as to adjust a frequency constant {square root}{square root over (LC)} of the VCO core.

Abstract: A grinding tool includes a toothed grinding wheel, two opposing stationary grinding members, and an actuating wheel; the grinding wheel is connected to a transmission shaft turnably connected to a housing and having an engaging end projecting from the housing; the stationary grinding members are fixedly disposed in the housing, and have grinding teeth on inward surfaces facing the grinding wheel; the actuating wheel is connected to the engaging end of the shaft at a middle connecting hole so that rotation of the actuating wheel can be passed on to the grinding wheel by means of the shaft; thus, contents of the housing can be ground with the grinding wheel and the stationary grinding members by means of holding the housing still, and turning the actuating wheel to and fro repeatedly.