Abstract: The invention is to provide an electronic book encryption and copy prevention method in which after an electronic device downloads a said electronic book from a wireless communications network, the said electronic book is decrypted by executing a corresponding decryption program and code key, following which reading is enabled; as a result, when reading the correct data content of an electronic book enabled by the method of the invention herein, not only is its corresponding decryption program and specific code key required, but the said decryption program and specific code key directly responds to the data output of the said electronic book.

Abstract: A multichip assembly includes semiconductor devices or semiconductor device components with outer connectors on peripheral edges thereof. The outer connectors are formed by creating via holes along boundary lines between adjacent, unsevered semiconductor devices, or semiconductor device components, then plating or filling the holes with conductive material. When adjacent semiconductor devices or semiconductor device components are severed from one another, the conductive material in each via between the semiconductor devices is bisected. The semiconductor devices and components of the multichip assembly may have different sizes, as well as arrays of outer connectors with differing diameters and pitches. Either or both ends of each outer connector may be electrically connected to another aligned outer connector or contact area of another semiconductor device or component. Assembly in this manner provides a low-profile stacked assembly.

Abstract: A multichip assembly includes semiconductor devices or semiconductor device components with outer connectors on peripheral edges thereof. The outer connectors are formed by creating via holes along boundary lines between adjacent, unsevered semiconductor devices, or semiconductor device components, then plating or filling the holes with conductive material. When adjacent semiconductor devices or semiconductor device components are severed from one another, the conductive material in each via between the semiconductor devices is bisected. The semiconductor devices and components of the multichip assembly may have different sizes, as well as arrays of outer connectors with differing diameters and pitches. Either or both ends of each outer connector may be electrically connected to another aligned outer connector or contact area of another semiconductor device or component. Assembly in this manner provides a low-profile stacked assembly.

Abstract: A semiconductor device package is disclosed which is substantially die-sized with respect to each of the X, Y and Z axes. The package includes outer connectors that are located along at least one peripheral edge thereof and that extend substantially across the height of the peripheral edge. Each outer connector is formed by severing a conductive via that extends substantially through a substrate blank, such as a silicon wafer, at a street located adjacent to an outer periphery of the semiconductor device of the package. The outer connectors may include recesses that at least partially receive conductive columns protruding from a support substrate therefor. Assemblies may include the packages in stacked arrangement, without height-adding connectors.

Abstract: A semiconductor assembly includes a leadframe with leads having offset portions exposed at an outer surface of a material package to form a grid array. An electrically conductive compound, such as solder, may be disposed or formed on the exposed lead portions to form a grid array such as a ball grid array (“BGA”) or other similar array-type structure of dielectric conductive elements. The leads may have inner bond ends including a contact pad thermocompressively bonded to a bond pad of the semiconductor chip to enable electrical communication therewith and a lead section with increased flexibility to improve the thermocompressive bond. The inner bond ends may also be wirebonded to the bond pads. Components for and methods of forming semiconductor assemblies are included.

Abstract: Methods of forming a semiconductor assembly includes a leadframe with leads having offset portions exposed at an outer surface of a material package to form a grid array. An electrically conductive compound, such as solder, may be disposed or formed on the exposed lead portions to form a grid array such as a ball grid array (“BGA”) or other similar array-type structure of dielectric conductive elements. The leads may have inner bond ends including a contact pad thermocompressively bonded to a bond pad of the semiconductor chip to enable electrical communication therewith and a lead section with increased flexibility to improve the thermocompressive bond. The inner bond ends may also be wirebonded to the bond pads.

Abstract: A stackable semiconductor package includes a semiconductor die, and has a chip sized peripheral outline matching that of the die. In addition to the die, the package includes stacking pads and stacking contacts on opposing sides of the die, and conductive grooves on the edges of the die in electrical communication with the stacking pads and the stacking contacts. The conductive grooves function as interlevel conductors for the package and can also function as edge contacts for the package. The configuration of the stacking pads, of the stacking contacts and of the conductive grooves permit multiple packages to be stacked and electrically interconnected to form stacked assemblies. A method for fabricating the package is if performed at the wafer level on a substrate, such as a semiconductor wafer, containing multiple dice. In addition, multiple substrates can be stacked, bonded and singulated to form stacked assemblies that include multiple stacked packages.

Abstract: A stackable semiconductor package includes a semiconductor die, and has a chip sized peripheral outline matching that of the die. In addition to the die, the package includes stacking pads and stacking contacts on opposing sides of the die, and conductive grooves on the edges of the die in electrical communication with the stacking pads and the stacking contacts. The conductive grooves function as interlevel conductors for the package and can also function as edge contacts for the package. The configuration of the stacking pads, of the stacking contacts and of the conductive grooves permit multiple packages to be stacked and electrically interconnected to form stacked assemblies. A method for fabricating the package is performed at the wafer level on a substrate, such as a semiconductor wafer, containing multiple dice. In addition, multiple substrates can be stacked, bonded and singulated to form stacked assemblies that include multiple stacked packages.

Abstract: A stackable semiconductor package includes a semiconductor die, and has a chip sized peripheral outline matching that of the die. In addition to the die, the package includes stacking pads and stacking contacts on opposing sides of the die, and conductive grooves on the edges of the die in electrical communication with the stacking pads and the stacking contacts. The conductive grooves function as interlevel conductors for the package and can also function as edge contacts for the package. The configuration of the stacking pads, of the stacking contacts and of the conductive grooves permit multiple packages to be stacked and electrically interconnected to form stacked assemblies. A method for fabricating the package is performed at the wafer level on a substrate, such as a semiconductor wafer, containing multiple dice. In addition, multiple substrates can be stacked, bonded and singulated to form stacked assemblies that include multiple stacked packages.

Abstract: A stackable semiconductor package includes a semiconductor die, and has a chip sized peripheral outline matching that of the die. In addition to the die, the package includes stacking pads and stacking contacts on opposing sides of the die, and conductive grooves on the edges of the die in electrical communication with the stacking pads and the stacking contacts. The conductive grooves function as interlevel conductors for the package and can also function as edge contacts for the package. The configuration of the stacking pads, of the stacking contacts and of the conductive grooves permit multiple packages to be stacked and electrically interconnected to form stacked assemblies. A method for fabricating the package is performed at the wafer level on a substrate, such as a semiconductor wafer, containing multiple dice. In addition, multiple substrates can be stacked, bonded and singulated to form stacked assemblies that include multiple stacked packages.

Abstract: A semiconductor device having a trench isolation structure and a method of fabricating the same are provided. The device has a trench region and an isolation structure. The trench region is disposed to define an active region at a predetermined region of an SOI substrate formed by sequentially stacking a buried insulating layer and an upper silicon layer on a base substrate. The isolation structure fills an inside of the trench region. The trench region has a deep trench region where the upper silicon layer penetrates to the buried insulating layer and a shallow trench region existing at an outside of the deep trench region. The method of forming a trench region with deep and shallow trench regions includes patterning an upper silicon layer of an SOI substrate. A trench oxide layer and a trench liner are conformally formed on a sidewall and a bottom of the trench region.

Abstract: Methods for forming an edge contact on a die and edge contact structures are described. The edge contacts on the die do not increase the height of the die. The edge contacts are positioned on the periphery of a die. The edge contacts are positioned in the saw streets. Each edge contact is connected to one bond pad of each die adjacent the saw street. The edge contact is divided into contacts for each adjacent die when the dies are separated. In an embodiment, a recess is formed in the saw street. In an embodiment, the recess is formed by scribing the saw street with a mechanical cutter. The recess is patterned and contact material is deposited to form the edge contacts.

Abstract: In a semiconductor memory device including memory cells and a peripheral circuit unit, a memory cell has a first gate structure formed on a semiconductor substrate; a first impurity region of a first conductive type formed in the substrate on a first side of the gate structure; and a second impurity region formed in the substrate on a second side of the gate structure, the second impurity region including: a third impurity region of the first conductive type, a fourth impurity region of the first conductive type between the third impurity region and the second side of the gate structure, and a halo ion region of a second conductive type formed adjacent to the fourth impurity region.

Abstract: In a semiconductor memory device including memory cells and a peripheral circuit unit, a memory cell has a first gate structure formed on a semiconductor substrate; a first impurity region of a first conductive type formed in the substrate on a first side of the gate structure; and a second impurity region formed in the substrate on a second side of the gate structure, the second impurity region including: a third impurity region of the first conductive type, a fourth impurity region of the first conductive type between the third impurity region and the second side of the gate structure, and a halo ion region of a second conductive type formed adjacent to the fourth impurity region.

Abstract: A high density unit (130, 160) comprising a first integrated circuit package (30, 32) comprising a carrier (70) having first and second sides (92, 94), a silicon chip (50) attached by an adhesive layer (60) and solder bonding (80) electrically connecting the silicon chip (50) to the carrier (70) stackably and electrically connected to a second integrated circuit package (30, 32), is disclosed.

Abstract: Methods, systems, and computer program products for high-performance interprocess communication. Each process dynamically identifies routines responsible for managing communication received from other processes through a shared memory heap and a shared memory queue, each of the routines handling one or more operation codes. An allocation from the shared heap produces a process agnostic memory handle from which a process specific memory pointer may be obtained. Using the memory pointer, the enqueuing process places an operation code, parameters, and any other relevant data in the allocated memory and adds the memory handle to a shared queue. The dequeuing process removes the memory handle from the queue and generates a memory pointer to access the allocated memory in the dequeuing process. Upon retrieving the operation code from the allocated memory, the dequeuing process calls the appropriate handler routine. Enqueues may be registered to account for expected responses that are not received.

Abstract: A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.

Abstract: A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.

Abstract: A method and apparatus for producing an integrated circuit package (30) comprising a substrate (70) having an opening (86) and first and second surfaces (92, 94), a plurality of routing strips (82) being integral with the substrate (70) and extending into the opening (86), a plurality of pads (100) disposed on the first and second surfaces (92, 94) are electrically connected with at least one of the routing strips (82), wire bonding (80) electrically connecting at least one bonding pad (120) to at least one of the routing strips (82) and a silicon chip (50) attached to the printed circuit board (70) by an adhesive material (60) that provide a seal between silicon chip (50) and printed circuit board (70) is disclosed.

Abstract: A method of etching an organic dielectric layer 10 on a substrate 15 with a high etching rate and a high etching selectivity ratio. The organic dielectric layer 10 comprises a low k dielectric material, such as a silicon-containing organic polymer, for example, benzocyclobutene. A patterned mask layer is formed on the organic dielectric layer 10, and the substrate 15 is placed in a process zone 35 of a process chamber 30. An energized process gas introduced into the process zone 35, comprises an oxygen-containing gas for etching the organic dielectric layer 10, a non-reactive gas for removing dissociated material to enhance the etching rate, and optionally, passivating gas for forming passivating deposits on sidewalls 90 of freshly etched features to promote anisotropic etching. Preferably, during etching, the temperature of substrate 15 is maintained at a low temperature of from about 15° C. of 80° C. to enhance the rate of etching of the dielectric layer.