Abstract: In a displacement measurement apparatus using light interference, a probe light path is spatially separated from a reference light path. Therefore, when a temperature or refractive index distribution by a fluctuation of air or the like, or a mechanical vibration is generated, an optical path difference fluctuates between both of the optical paths, and a measurement error is generated. In the solution, an optical axis of probe light is brought close to that of reference light by a distance which is not influenced by any disturbance, a sample is irradiated with the probe light, a reference surface is irradiated with the reference light, reflected light beams are allowed to interfere with each other, and a displacement of the sample is obtained from the resultant interference light to thereby prevent the measurement error from being generated by the fluctuation of the optical path difference.

Abstract: A method for high-precision measurement of film thickness and the distribution of film thickness of a transparent film is disclosed. The method is performed during a CMP process, without being affected by the film thickness distribution among the LSI regions or on the semiconductor wafer surface. The film thickness is measured by specifying relatively level measurement regions, according to a characteristic quantity of the spectral waveform of the reflected light from the transparent film, such as the reflection intensity, frequency spectrum intensity. This permits highly accurate control of film thickness. The leveling process in CMP processing can be optimized on the basis of the film thickness distribution.

Abstract: The laser beam machine of the present invention includes: an XY stage on which to rest a workpiece with multiple machining objects arrayed on it, and which moves the workpiece in an XY direction on the basis of NC data; an image acquisition head which is provided in an image acquisition station and has oblique illumination optical system and detection optical system; and a laser machining head which is provided in a laser machining station and has a laser light source, an XY optical beam deflector for deflecting a laser beam in the XY direction on the basis of the deflection control data obtained in accordance with the image signals from each machining object that have been acquired by the image acquisition head, and an irradiation lens for admitting the above-deflected laser beam into each machining object from a substantially perpendicular direction.

Abstract: A scanning probe microscope for measuring a surface profile of a sample by bringing a probe into close proximity to or contact with the surface of the sample and scanning the sample surface includes: a sample stage movable in at least one axis direction; the probe which is brought into close proximity to or contact with the surface of the sample mounted on the sample stage and scans the sample surface; a probe-driving unit for moving the probe three-dimensionally; a probe deflection detector for detecting a deflection of the probe; and an observation optical system which has an objective lens and observes the probe disposed on substantially the optical axis of the objective lens, and the sample. The probe-driving unit is disposed with three sets of paired drive sources arranged essentially with symmetry with respect to the optical axis of the objective lens.

Abstract: The object of the present invention is to establish a technology for directly evaluating polishing pad surface conditions, to allow high-precision CMP process management, and to improve process throughput. The pad surface is illuminated with light. The intensity of reflected light or fluorescence from the illuminated area or an intensity distribution image is used directly evaluate the pad surface condition. Based on the results of this evaluation, conditioning conditions for a conditioner are optimized, thus allowing high-precision CMP processing while maintaining good pad surface conditions.

Abstract: A tool useful for defect analysis can be provided in which a surface image of the whole single die is detected, and the surface image of the whole detected die, information of defect position and a magnified image of a defect region are displayed together at a time so that the operator can intuitively grasp what circuit pattern the defect or the like is located on within a die.

Abstract: Arrangements (e.g., methods) for manufacturing a display device, including irradiating an amorphous semiconductor film formed on a substrate with an excimer laser beam to convert the amorphous semiconductor film into a polycrystalline semiconductor film; and irradiating predetermined areas of the polycrystalline semiconductor film intermittently with a continuous wave laser beam while a position of the substrate with respect to the continuous wave laser beam is scanned, crystal grains larger than those of the polycrystalline semiconductor film other than the predetermined areas are formed in each of the predetermined areas locally in the polycrystalline semiconductor film, wherein first thin film transistors are formed in the predetermined areas while second thin film transistors are formed in the polycrystalline semiconductor film other than the predetermined areas thereof.

Abstract: The present invention relates to a method for inspecting a crack in a metal surface or the like, and, particularly, to an inspection method and apparatus for nondestructive inspection such as liquid penetrant inspection and magnetic particle testing. The present invention provides a flaw inspection method that essentially comprises the steps of illuminating a surface of a sample to be inspected, obtaining an image of the surface, characterizing a potential flaw on the inspected surface by processing the obtained image, displaying an image of the potential flaw, verifying that the potential flaw is a true flaw, and storing an image of the verified flaw in memory.

Abstract: The present invention relates to a method for inspecting a crack in a metal surface or the like, and, particularly, to an inspection method and apparatus for nondestructive inspection such as liquid penetrant inspection and magnetic particle testing. The present invention provides a flaw inspection method that essentially comprises the steps of illuminating a surface of a sample to be inspected, obtaining an image of the surface, characterizing a potential flaw on the inspected surface by processing the obtained image, displaying an image of the potential flaw, verifying that the potential flaw is a true flaw, and storing an image of the verified flaw in memory.

Abstract: A laser beam is concentrated using an objective lens and radiated on a amorphous silicon film or polycrystalline silicon film having a grain size of one micron or less, the laser beam being processed from a continuous wave laser beam (1) to be pulsed using an EO modulator and to have arbitrary temporal energy change while pulsing ; (2) to have an arbitrary spatial energy distribution using a beam-homogenizer, filter having an arbitrary transmittance distribution, and rectangular slit; and (3) to eliminate coherency thereof using a high-speed rotating diffuser. In this manner, it is possible to realize a liquid crystal display device in which a driving circuit comprising a polycrystalline silicon film having substantially the same properties as a single crystal is incorporated in a TFT panel device.

Abstract: The present invention provides a bump shape measuring apparatus comprising an illumination optical system which illuminates bumps arranged on a board with illumination light of a low tilt angle to a surface of the board; a detection optical system where reflected light from the bumps is condensed for detection of image signals of the bumps by a high tilt angle to the surface of the board; an image processing unit where an outline of the tip and the base of each of the bumps is calculated based on the image signals of each of the bumps, and geometric characteristics including at least a position and height of each of the bumps are calculated based on the outline of the tip and the base of each of the bumps; and a main control unit where information on the calculated geometric characteristics of the bumps is displayed on a display unit.

Abstract: The present invention provides a manufacturing method and manufacturing device for high-precision thin film devices, whereby the film thickness and film thickness distribution of a transparent film is measured to a high degree of accuracy during processing, and the film thickness can be controlled with high precision during CMP processing, by accurately measuring the film thickness of the uppermost layer, without being affected by the film thickness distribution between LSI regions or within the semiconductor wafer surface generated by CMP processing. The field of view and measurement position used for measuring the film thickness of a transparent film during processing are set such that the measured area is not affected by the film thickness distribution of the actual device patterns subjected to CMP processing.

Abstract: Laser sources output laser lights L1 and L2 having different wavelengths so as to increase an accuracy of an endpoint detection of polishing processing by enabling an accurate detection of a film thickness of a layer insulating film on a surface of a wafer to be polished by the CMP processing, the lights are emitted from a detection window via a beam splitter to the layer insulating film formed on the surface of the wafer to be polished by a pad, different optical detectors detect interference lights corresponding to the laser lights L1 and L2 reflected and generated from a surface of the layer insulating film and a pattern under the surface via the detection window, the beam splitter, and a dichroic mirror, the detection results are supplied to a film thickness evaluation unit 7, a film thickness of the layer insulation film is detected on the basis of a relationship between intensities of the reflected interference lights to the laser lights L1 and L2 or the intensity ratio, and an endpoint of polishing pro

Abstract: The present invention relates to a method which provides reliable image information that makes it possible to perform external inspections for defects in the welded parts of piping and the like using images such as movie images, still images and the like. Using a digital camera, digital video camera or the like, the reliability of images can be increased by adding information such as the time and place of imaging, air temperature, humidity, altitude, environment, sounds and the like to images. Furthermore, since imaging data is transmitted to a data managing company via the internet or the like immediately after imaging, the possibility of falsification by the person performing the imaging or the like is eliminated, so that the reliability of the images is increased, thus making it possible to obtain highly reliable image information.

Abstract: A method of polishing a film formed on a wafer includes steps of polishing a film formed on a surface of a wafer which is chucked by a wafer chuck and set on a polishing disk so that the film faces the polishing disk, irradiating a plurality of portions of the film under polishing process with lights having different wavelengths from one another through a plurality of holes formed in the polishing disk, detecting lights reflected from the plurality of portions of the film caused by the irradiation, evaluating a thickness distribution of the film from information of an intensity ratio of the detected reflected lights, and controlling a pushing pressure of the wafer chuck according to the evaluated thickness distribution under polishing process.

Abstract: The active layer (active region) of the thin-film transistor making up the driver circuit is obtained by reformation implemented by scanning the continuous-wave laser light, condensed into a linear form or a rectangle form extremely longer in the longitudinal direction than in the transverse direction, along a given direction crossing the longitudinal direction. This is made up of a poly silicon film containing crystal grains having no grain boundaries crossing the direction of current flow, that is, a band-like polycrystalline silicon film. As a result, it is possible to implement a display device having stable and high quality active elements outside the display region on the insulating substrate.

Abstract: A laser beam is concentrated using an objective lens and radiated on a amorphous silicon film or polycrystalline silicon film having a grain size of one micron or less, the laser beam being processed from a continuous wave laser beam (1) to be pulsed using an EO modulator and to have arbitrary temporal energy change while pulsing ; (2) to have an arbitrary spatial energy distribution using a beam-homogenizer, filter having an arbitrary transmittance distribution, and rectangular slit; and (3) to eliminate coherency thereof using a high-speed rotating diffuser. In this manner, it is possible to realize a liquid crystal display device in which a driving circuit comprising a polycrystalline silicon film having substantially the same properties as a single crystal is incorporated in a TFT panel device.

Abstract: A tool useful for defect analysis can be provided in which a surface image of the whole single die is detected, and the surface image of the whole detected die, information of defect position and a magnified image of a defect region are displayed together at a time so that the operator can intuitively grasp what circuit pattern the defect or the like is located on within a die.

Abstract: A method for high-precision measurement of film thickness and the distribution of film thickness of a transparent film is disclosed. The method is performed during a CMP process, without being affected by the film thickness distribution among the LSI regions or on the semiconductor wafer surface. The film thickness is measured by specifying relatively level measurement regions, according to a characteristic quantity of the spectral waveform of the reflected light from the transparent film, such as the reflection intensity, frequency spectrum intensity. This permits highly accurate control of film thickness. The leveling process in CMP processing can be optimized on the basis of the film thickness distribution.

Abstract: A method of polishing a film formed on a wafer includes steps of polishing a film formed on a surface of a wafer which is chucked by a wafer chuck and set on a polishing disk, irradiating a plurality of portions of the film under polishing process with light, detecting lights reflected from the plurality of portions of the film caused by the irradiation and providing a detected signal indicative thereof, evaluating a thickness distribution of the film by processing the detected signal, and controlling a pushing pressure of the wafer chuck according to the evaluated thickness distribution under polishing process.