Abstract: A structure including a redistribution structure comprising dielectric layers and conductive layers alternately stacked is provided, wherein a dielectric layer among the dielectric layers of the redistribution structure comprises a first surface, a conductive layer among the conductive layers of the redistribution structure comprising a second surface, and the conductive layer comprises a wiring layer and a seed layer; and an under-bump metallization (UBM) layer comprises a third surface, a fourth surface opposite to the third surface, and a sidewall surface extending from the third surface to the fourth surface, wherein a portion of the seed layer is between the wiring layer and the UBM layer, and the UBM is in contact with the dielectric layer.

Abstract: A semiconductor structure includes a semiconductor die, a redistribution circuit structure, and a terminal. The redistribution circuit structure is disposed on and electrically coupled to the semiconductor die. The terminal is disposed on and electrically coupled to the redistribution circuit structure, where the redistribution circuit structure is disposed between the semiconductor die and the terminal, and the terminal includes an under-bump metallization (UBM) and a capping layer. The UBM is disposed on and electrically coupled to the redistribution circuit structure, where the UBM includes a recess. The capping layer is disposed on and electrically coupled to the UBM, where the UBM is between the capping layer and the redistribution circuit structure, and the capping layer fills the recess of the UBM.

Abstract: A method including the following steps is provided. A seed layer is formed. Conductive material is formed on the seed layer by performing an electrolytic plating process with an electrolytic composition comprising: a source of copper ions; an accelerator agent; and a suppressor agent, by structure represented (1) or (2): wherein x is between 2 and 50, y is between 5 and 75, and R1 is an alkyl group of 1 to 3 carbon atoms. A portion of the seed layer exposed by the conductive material is removed.

Abstract: A method of manufacturing a semiconductor package includes the following steps. A first integrated circuit is encapsulated by a first encapsulant. A first passivation layer is formed over the first integrated circuit and the first encapsulant. A first thermal pattern is formed in the first passivation layer. A second passivation layer is formed on the first passivation layer and the first thermal pattern, wherein the first thermal pattern is exposed by a first opening of the second passivation layer. A second integrated circuit is adhered to the second passivation layer through an adhesive layer, wherein the adhesive layer is partially disposed in the first opening of the second passivation layer.

Abstract: A semiconductor structure includes a semiconductor die, a redistribution circuit structure, and a terminal. The redistribution circuit structure is disposed on and electrically coupled to the semiconductor die. The terminal is disposed on and electrically coupled to the redistribution circuit structure, where the redistribution circuit structure is disposed between the semiconductor die and the terminal, and the terminal includes an under-bump metallization (UBM) and a capping layer. The UBM is disposed on and electrically coupled to the redistribution circuit structure, where the UBM includes a recess. The capping layer is disposed on and electrically coupled to the UBM, where the UBM is between the capping layer and the redistribution circuit structure, and the capping layer fills the recess of the UBM.

Abstract: A structure including a redistribution structure comprising dielectric layers and conductive layers alternately stacked is provided, wherein a dielectric layer among the dielectric layers of the redistribution structure comprises a first surface, a conductive layer among the conductive layers of the redistribution structure comprising a second surface, and the conductive layer comprises a wiring layer and a seed layer; and an under-bump metallization (UBM) layer comprises a third surface, a fourth surface opposite to the third surface, and a sidewall surface extending from the third surface to the fourth surface, wherein a portion of the seed layer is between the wiring layer and the UBM layer, and the UBM is in contact with the dielectric layer.

Abstract: A semiconductor package includes a first integrated circuit, a first passivation layer, a second passivation layer, a thermal pattern, an adhesive layer and a second integrated circuit. The first integrated circuit is encapsulated by an encapsulant. The first passivation layer is disposed over the first integrated circuit and the encapsulant. The second passivation layer is disposed over the first passivation layer. The thermal pattern is disposed in the first passivation layer and the second passivation layer. The adhesive layer is disposed over the second passivation layer and in direct contact with the thermal pattern. The second integrated circuit is adhered to the first integrated circuit through the adhesive layer.

Abstract: An interposer module includes an interposer, a semiconductor die on the interposer, and a plurality of interconnects connecting the interposer to the semiconductor die, wherein the plurality of interconnects includes a first interconnect portion including a first alloy barrier, a second interconnect portion including a second alloy barrier, and a solder joint connecting the first interconnect portion to the second interconnect portion.

Abstract: Vertically stacked semiconductor devices and methods of fabrication thereof include intermediate redistribution layer (RDL) pads underlying a plurality of bump structures. A plurality of intermediate RDL pads may be formed over a first device structure, and at least one bump structure may be formed over each of the intermediate RDL pads. The bump structures include a metal layer and a barrier layer having a lower solder wettability located between the metal layer and the underlying intermediate RDL pad. The barrier layer may constrain solder wetting along the sidewall of the bump structure to minimize solder bridging and other defects. In some embodiments, the intermediate RDL pads may have a relatively lower solder wettability to minimize solder defects. Characteristics of the intermediate RDL pads and the bump structures may be controlled to improve the flatness characteristics of bump structures.

Abstract: In an embodiment, a device includes: an integrated circuit die; an encapsulant at least partially surrounding the integrated circuit die; and a redistribution structure including: a plurality of dielectric layers over the encapsulant and the integrated circuit die; a plurality of metallization patterns in the dielectric layers, the metallization patterns being electrically coupled to the integrated circuit die; and a sealing ring in the dielectric layers, the sealing ring extending around the metallization patterns, the sealing ring being electrically isolated from the metallization patterns and the integrated circuit die, the sealing ring including a plurality of sealing ring layers, each of the sealing ring layers including a via portion extending through a respective one of the dielectric layers, the via portion of each of the sealing ring layers being aligned along a same common axis.

Abstract: A semiconductor package includes a first integrated circuit structure, a first encapsulation material laterally encapsulating the first integrated circuit structure, a first redistribution structure, a solder layer, a second integrated circuit structure, a second encapsulation material second laterally encapsulating the second integrated circuit structure and a second redistribution structure. The first integrated circuit structure includes a first metallization layer. The first redistribution structure is disposed over the first integrated circuit structure and first encapsulation material. The first metallization layer faces away from the first redistribution structure and thermally coupled to the first redistribution structure. The solder layer is dispose over the first redistribution structure. The second integrated circuit structure is disposed on the first redistribution structure and includes a second metallization layer in contact with the solder layer.

Abstract: A semiconductor package includes a substrate, a composite seed-barrier layer, a routing via, and a semiconductor die. The substrate has a through hole formed therethrough. The composite seed-barrier layer extends on sidewalls of the through hole and includes a first barrier layer, a seed layer, and a second barrier layer sequentially stacked on the sidewalls of the through hole. The routing via fills the through hole and is separated from the substrate by the composite seed-barrier layer. The semiconductor die is electrically connected to the routing via. Along the sidewalls of the through holes, at a level height corresponding to half of a total thickness of the substrate, the seed layer is present as inclusions of seed material surrounded by barrier material of the first barrier layer and the second barrier layer.

Abstract: A metallic seed layer may be deposited on a top surface of a wafer. The wafer may be mounted on a wafer holder using a wafer clamp assembly. The wafer clamp assembly includes a wafer clamp frame, a dielectric seal ring, and a proximity mask. An electroplating process may be performed in an electroplating bath while the wafer holder and the wafer are immersed in an electroplating solution. Electrical field within a predominant fraction of an entire volume of an annular region between an annular backside surface of the proximity mask and the wafer has a distribution of a tilt angle relative to the axial direction that is greater than arctangent (0.1).

Abstract: In an embodiment, a device includes: an integrated circuit die; an encapsulant at least partially surrounding the integrated circuit die; and a redistribution structure including: a plurality of dielectric layers over the encapsulant and the integrated circuit die; a plurality of metallization patterns in the dielectric layers, the metallization patterns being electrically coupled to the integrated circuit die; and a sealing ring in the dielectric layers, the sealing ring extending around the metallization patterns, the sealing ring being electrically isolated from the metallization patterns and the integrated circuit die, the sealing ring including a plurality of sealing ring layers, each of the sealing ring layers including a via portion extending through a respective one of the dielectric layers, the via portion of each of the sealing ring layers being aligned along a same common axis.

Abstract: A manufacturing method of a semiconductor package includes the following steps. An integrated circuit structure is provided, wherein the integrated circuit structure includes an integrated circuit and a metallization layer covering a back surface of the integrated circuit. An encapsulation material is provided to laterally encapsulate the integrated circuit structure. A redistribution structure is provided over the integrated circuit structure and the encapsulation material, wherein the redistribution structure includes a thermal metal layer furthermost from the integrated circuit structure, wherein the thermal metal layer is thermally coupled to the metallization layer. A solder layer is provided over the thermal metal layer, wherein the solder layer is thermally coupled to the thermal metal layer.

Abstract: A semiconductor package includes a substrate, a composite seed-barrier layer, a routing via, and a semiconductor die. The substrate has a through hole formed therethrough. The composite seed-barrier layer extends on sidewalls of the through hole and includes a first barrier layer, a seed layer, and a second barrier layer sequentially stacked on the sidewalls of the through hole. The routing via fills the through hole and is separated from the substrate by the composite seed-barrier layer. The semiconductor die is electrically connected to the routing via. Along the sidewalls of the through holes, at a level height corresponding to half of a total thickness of the substrate, the seed layer is present as inclusions of seed material surrounded by barrier material of the first barrier layer and the second barrier layer.

Abstract: Provided is a package structure including a die; an electrically connecting structure having a die attach region and a peripheral region surrounding the die attach region, wherein the die is disposed on the electrically connecting structure within the die attach region; an insulating protrusion disposed in the peripheral region and extending in a thickness direction of the die; a conductive structure disposed on the electrically connecting structure and encapsulating the insulating protrusion, wherein the conductive structure is electrically coupled to the electrically connecting structure and the die; and a dielectric structure disposed on the electrically connecting structure and encapsulating the die and the conductive structure.

Abstract: In an embodiment, a device includes: an integrated circuit die; an encapsulant at least partially surrounding the integrated circuit die, the encapsulant including fillers having an average diameter; a through via extending through the encapsulant, the through via having a lower portion of a constant width and an upper portion of a continuously decreasing width, a thickness of the upper portion being greater than the average diameter of the fillers; and a redistribution structure including: a dielectric layer on the through via, the encapsulant, and the integrated circuit die; and a metallization pattern having a via portion extending through the dielectric layer and a line portion extending along the dielectric layer, the metallization pattern being electrically coupled to the through via and the integrated circuit die.

Abstract: Semiconductor package includes substrate, first barrier layer, second barrier layer, routing via, first routing pattern, second routing pattern, semiconductor die. Substrate has through hole with tapered profile, wider at frontside surface than at backside surface of substrate. First barrier layer extends on backside surface. Second barrier layer extends along sidewalls of through hole and on frontside surface. Routing via fills through hole and is separated from sidewalls of through hole by at least second barrier layer. First routing pattern extends over first barrier layer on backside surface and over routing via. First routing pattern is electrically connected to end of routing via and has protrusion protruding towards end of routing via in correspondence of through hole. Second routing pattern extends over second barrier layer on frontside surface. Second routing pattern directly contacts another end of routing via. Semiconductor die is electrically connected to routing via by first routing pattern.

Abstract: A semiconductor structure and a method of forming the same are disclosed. A method of forming a semiconductor structure includes the following operations. An insulating layer is formed over a substrate. A metal feature is formed in the insulating layer. An argon-containing plasma treatment is performed to the insulating layer and the metal feature.