Abstract: According to one exemplary embodiment, a method for adjusting geometry of a capacitor includes fabricating a first composite capacitor residing in a first standard cell with a first set of process parameters. The method further includes using a second standard cell having substantially same dimensions as the first standard cell. The method further includes using a capacitance value from the first composite capacitor to adjust a geometry of a second composite capacitor residing in the second standard cell, wherein the second composite capacitor is fabricated with a second set of process parameters. The geometry of the second composite capacitor can be adjusted to cause the second composite capacitor to have a capacitance value substantially equal to the capacitance value from the first composite capacitor.

Abstract: A method for transmitting data in real time in a multimedia data stream over a local network is provided. The local network comprises a sending end and one or more receiving ends. The method includes the steps of packaging a QoS (quality of service) control signal into a QoS packet according to a RTCP/TCP/IP protocol; packaging the multimedia data stream into a multimedia data packet according to a RTP/UDP/IP protocol; establishing a connection between the sending end and one of the one or more receiving ends; delivering the QoS packet and the multimedia data packet from the sending end to the one or more receiving end over the local network; and the one or more receiving end de-packaging the QoS packet into the QoS signal to control the transmission of the multimedia data stream.

Abstract: A multipurpose charging system with a transmission function is capable of solving the power consumption problem of a handheld device when the handheld device is connected to a peripheral device. The multipurpose charging system has a handheld device, a transformer device, and a USB line. The handheld device has a built-in USB host chip and a USB socket, and electrically connected to the transformer device by the USB line. The transformer device further has an Ethernet interface and a USB port. The multipurpose charging system can charge the handheld device, supply electric power for a peripheral device connected to the USB port, transmit data, and use an Ethernet by the transformer device at the same time.

Abstract: A method for transmitting data in real time in a multimedia data stream over a local network is provided. The local network comprises a sending end and one or more receiving ends. The method includes the steps of packaging a QoS (quality of service) control signal into a QoS packet according to a RTCP/TCP/IP protocol; packaging the multimedia data stream into a multimedia data packet according to a RTP/UDP/IP protocol; establishing a connection between the sending end and one of the one or more receiving ends; delivering the QoS packet and the multimedia data packet from the sending end to the one or more receiving end over the local network; and the one or more receiving end de-packaging the QoS packet into the QoS signal to control the transmission of the multimedia data stream.

Abstract: A high accurate SOI optical waveguide Michelson interferometer sensor for temperature monitoring combines a waveguide coupler, waveguide, or splitter with two silicon-on-insulator Bragg gratings.

Abstract: A high accurate SOI optical waveguide Michelson interferometer sensor for temperature monitoring has designed and analyzed in this invention. According to the numerical analysis of power reflective spectra of waveguide Michelson interferometers, the temperature sensing of waveguide SOI Michelson interferometer sensor can improve at least 20 times than fiber Bragg grating temperature sensor. Moreover, the SOI Waveguide interferometer sensor we designed presents high sensitivity than pure single waveguide Bragg grating sensor and fiber Bragg grating sensor by adjusting the length of the two interferometric arms. The full wavelength half maximum (FWHM) of our designed SOI optical waveguide Michelson interferometer can be narrowed much smaller than fiber Bragg grating and waveguide Bragg grating sensors for sensitivity improvement. The invention of this optical SOI waveguid sensing devices shows promising results for developing integrated OEIC sensors in the future.

Abstract: A method of determining classification codes for defects occurring in semiconductor processes comparing images of defects from a first selected wafer with images of defects in a first image reference library. The images in the first image reference library are updated from a master image reference library. The images in the master image reference library are the best images of defect types. The images in the master image reference library are in a format readable by all review stations utilized to review the images of the defect.

Abstract: A method of determining an accurate disposition decision for each inspected layer in a wafer lot wherein a measured defect density is compared to a calculated disposition criterion determined for each inspected layer. If the measured defect density is above the calculated disposition criterion the wafer lot is placed on hold and if the measured defect density is at or below the calculated disposition criterion the wafer lot is sent to the next process. The disposition criterion for each layer is determined from a yield value determined for each layer. The yield value is the yield necessary for each layer to obtain a profitable product and is determined from cost data for each die in the wafer lot and a risk factor determined by management and includes market data such as selling price and demand for the product. The yield value is combined with defect sensitivity determined for each layer. The defect sensitivity is determined from the combination of critical area and historical frequency for each layer.

Abstract: A method of manufacturing semiconductor wafers using a simulation tool to determine a set of predicted wafer electrical test parameters. The set of predicted wafer electrical test parameters are compared with wafer electrical test specifications tabulated for each process during the manufacturing process. During the comparison, it is determined whether the predicted wafer electrical test parameters are within the specifications for the process and circuit simulations are then conducted using the predicted wafer electrical test parameters. Device performance is predicted from the circuit simulations and the disposition of the wafer lot is determined utilizing tabulated from a disposition performance table.

Abstract: A method of utilizing associated process data parameters in the manufacture of semiconductor wafers by converting tool-based data to lot based data in order to predict wafer electrical test results from measured in-line critical dimensions, lot based data and the converted tool-based data. The converted tool-based data is obtained by interpolating data between a measurement obtained from a tool at a first time and a measurement obtained from the tool at a second time. The data association is obtained using LaPlace-Everett interpolation. The converted tool-based data can also be obtained by extrapolating data from the historical measurements taken from the tool.

Abstract: A method of manufacturing semiconductor wafers using a simulation tool to determine a set of predicted wafer electrical test measurements that are compared to a set of target wafer electrical test measurements to obtain a set of optimized process parameters for the equipment for the next process. The optimized process parameters are compared to the equipment characteristics for the equipment of the next process and the process parameters for the next process are automatically adjusted.

Abstract: A defect management system with a method to update a database with defect data concerning propagator defect data. Defect data obtained from each layer formed on a semiconductor wafer is stored in a relational database. Defect data determined in a current layer to be defect data for a defect observed in a previous layer is defined as data concerning a propagator defect. Propagator defect data is used to update the data in the database relating to the previous layer.

Abstract: A semiconductor wafer optical scanning system and method for determining defects on a semiconductor wafer is disclosed. The method for determining wafer defects is based on maximum allowable defects on a swath basis, rather than maximum allowable defects on a wafer basis. The method step include determining the scanned area of an individual swath that is based on a recipe set-up, consistent with the capability of the optical scanning equipment being used and the particular semiconductor wafer being tested for defects. The predetermined swath area is supplied and stored in the optical scanning system along with the maximum allowable defect density determined by the user. By using the predetermined maximum allowable defects for a swath as a limit, defect analysis may be performed on the entire wafer. The optical scanning system would stop acquiring defects for the current swath being analyzed whenever the defect limit is reached, or until the swath defect analysis has been completed.

Abstract: A method to accurately classify defects on a semiconductor wafer wherein a scanning tool detects defects and assigns values to parameters that are characteristic of each defect. The values of the characteristic parameters represent a thumbprint of each defect and the defects are placed into "bins" according to the thumbprint of each defect. A sample of defects in each bin is analyzed and assigned a classification code.

Abstract: A method of obtaining accurate actual ion implantation equipment used in ion implantation processes during the manufacture of semiconductor devices. A monitor structure for each ion implant process is implanted with ions during the ion implant process. A control monitor structure is implanted with boron ions. The concentration profiles of all implanted monitor structure are determined during wafer electrical tests (WET). The as-implanted concentration profile is determined for the boron-implanted control monitor structure and the thermal budget of the manufacturing process is determined. The as-implanted concentration profiles of the remaining monitor structures are determined using the thermal budget determined from the boron-implanted control monitor structure. The actual operating parameters of the ion implantation equipment is determined from the as-implanted concentration profiles.

Abstract: A statistical simulation of a semiconductor fabrication process is performed in parallel with the actual process. Input parameters derived from a probability density function are applied to the simulator which, in turn, simulates an actual fabrication process which is modeled as a probability density function. Each simulation step is repeated with a random seed value using a Monte Carlo technique, a trial-and-error method using repeated calculations to determine a best solution to a problem. The simulator generates an output in the form of a probability distribution. The statistical simulation uses single-step feedback in which a simulation run uses input parameters that are supplied or derived from actual in-line measured data. Output data generated by the simulator, both intermediate output structure data and WET data, are matched to actual in-line measured data in circumstances for which measured data is available.

Abstract: A method of determining classification codes for defects occurring in semiconductor manufacturing processes and for storing the information used to determine the classification codes. A wafer is selected from a production lot after the lot is sent through a first manufacturing process. The selected wafer is scanned to determine if there are defects on the wafer. Images of selected defects are examined and a numerical value is assigned to each of N elemental descriptor terms describing each defect. A classification code is determined for each defect based upon the numerical values assigned to the N elemental descriptor terms. The classification code and numerical values assigned to the N elemental descriptor terms are stored in a database. The wafer is sent through each sequential process and classification codes are assigned to additional defects selected after each sequential process.

Abstract: A defect management system with a method to identify and reclassify previously classified propagator defects. The defect management system also has a method of identifying cluster defects and selecting at least one cluster defect to classify.

Abstract: Defect scanner sensitivity and accuracy are improved for light scattering defect scanners and pattern matching defect scanners by calibrating the defect scanners to each die on a wafer using preset marks on the corresponding die. The marks have a predetermined size based on the sensitivity of the defect scanners and a predetermined position relative to the circuit pattern on the corresponding die. Alignment of the defect scanners to a specific die provides improvement in coordinate accuracy over alignment with respect to an entire wafer. A layout mapping defect filtering system collects defect scan data and determines the interaction between the detected defects and a circuit layout. The layout mapping defect filtering system provides automatic identification in real time of killer defects that cause failure of the completed integrated circuit, and classifies and analyzes defects to identify potential killer defects within specified defect classes to identify defective die.

Abstract: A vehicle communications system having a remote control unit installed in the interior of a vehicle and a display unit located on the exterior of the vehicle. The display unit has an input from the remote control unit and an input from a vehicle interface module that has inputs from the vehicle such as the braking system and the turning signal system. The remote control unit is controllable by the driver in the vehicle and has a table of preset and preprogrammed messages selectable by the driver. The driver selects a message to be displayed and sends the message to the display unit. Any input to the vehicle interface module from the vehicle signaling systems overrides the signal input from the remote control unit unless the display unit is mounted on the front of the vehicle. The driver can select a message from a table of messages that are sequentially displayed on the remote control unit. The table of messages is stored on a flash memory in the remote unit and in a flash memory in the display unit.