Abstract: A defect management system with a method to update a database with defect data concerning propagator defect data. Defect data obtained from each layer formed on a semiconductor wafer is stored in a relational database. Defect data determined in a current layer to be defect data for a defect observed in a previous layer is defined as data concerning a propagator defect. Propagator defect data is used to update the data in the database relating to the previous layer.

Abstract: A semiconductor wafer optical scanning system and method for determining defects on a semiconductor wafer is disclosed. The method for determining wafer defects is based on maximum allowable defects on a swath basis, rather than maximum allowable defects on a wafer basis. The method step include determining the scanned area of an individual swath that is based on a recipe set-up, consistent with the capability of the optical scanning equipment being used and the particular semiconductor wafer being tested for defects. The predetermined swath area is supplied and stored in the optical scanning system along with the maximum allowable defect density determined by the user. By using the predetermined maximum allowable defects for a swath as a limit, defect analysis may be performed on the entire wafer. The optical scanning system would stop acquiring defects for the current swath being analyzed whenever the defect limit is reached, or until the swath defect analysis has been completed.

Abstract: A method to accurately classify defects on a semiconductor wafer wherein a scanning tool detects defects and assigns values to parameters that are characteristic of each defect. The values of the characteristic parameters represent a thumbprint of each defect and the defects are placed into "bins" according to the thumbprint of each defect. A sample of defects in each bin is analyzed and assigned a classification code.

Abstract: A method of obtaining accurate actual ion implantation equipment used in ion implantation processes during the manufacture of semiconductor devices. A monitor structure for each ion implant process is implanted with ions during the ion implant process. A control monitor structure is implanted with boron ions. The concentration profiles of all implanted monitor structure are determined during wafer electrical tests (WET). The as-implanted concentration profile is determined for the boron-implanted control monitor structure and the thermal budget of the manufacturing process is determined. The as-implanted concentration profiles of the remaining monitor structures are determined using the thermal budget determined from the boron-implanted control monitor structure. The actual operating parameters of the ion implantation equipment is determined from the as-implanted concentration profiles.

Abstract: A method of determining classification codes for defects occurring in semiconductor manufacturing processes and for storing the information used to determine the classification codes. A wafer is selected from a production lot after the lot is sent through a first manufacturing process. The selected wafer is scanned to determine if there are defects on the wafer. Images of selected defects are examined and a numerical value is assigned to each of N elemental descriptor terms describing each defect. A classification code is determined for each defect based upon the numerical values assigned to the N elemental descriptor terms. The classification code and numerical values assigned to the N elemental descriptor terms are stored in a database. The wafer is sent through each sequential process and classification codes are assigned to additional defects selected after each sequential process.

Abstract: A statistical simulation of a semiconductor fabrication process is performed in parallel with the actual process. Input parameters derived from a probability density function are applied to the simulator which, in turn, simulates an actual fabrication process which is modeled as a probability density function. Each simulation step is repeated with a random seed value using a Monte Carlo technique, a trial-and-error method using repeated calculations to determine a best solution to a problem. The simulator generates an output in the form of a probability distribution. The statistical simulation uses single-step feedback in which a simulation run uses input parameters that are supplied or derived from actual in-line measured data. Output data generated by the simulator, both intermediate output structure data and WET data, are matched to actual in-line measured data in circumstances for which measured data is available.

Abstract: A defect management system with a method to identify and reclassify previously classified propagator defects. The defect management system also has a method of identifying cluster defects and selecting at least one cluster defect to classify.

Abstract: Defect scanner sensitivity and accuracy are improved for light scattering defect scanners and pattern matching defect scanners by calibrating the defect scanners to each die on a wafer using preset marks on the corresponding die. The marks have a predetermined size based on the sensitivity of the defect scanners and a predetermined position relative to the circuit pattern on the corresponding die. Alignment of the defect scanners to a specific die provides improvement in coordinate accuracy over alignment with respect to an entire wafer. A layout mapping defect filtering system collects defect scan data and determines the interaction between the detected defects and a circuit layout. The layout mapping defect filtering system provides automatic identification in real time of killer defects that cause failure of the completed integrated circuit, and classifies and analyzes defects to identify potential killer defects within specified defect classes to identify defective die.

Abstract: A vehicle communications system having a remote control unit installed in the interior of a vehicle and a display unit located on the exterior of the vehicle. The display unit has an input from the remote control unit and an input from a vehicle interface module that has inputs from the vehicle such as the braking system and the turning signal system. The remote control unit is controllable by the driver in the vehicle and has a table of preset and preprogrammed messages selectable by the driver. The driver selects a message to be displayed and sends the message to the display unit. Any input to the vehicle interface module from the vehicle signaling systems overrides the signal input from the remote control unit unless the display unit is mounted on the front of the vehicle. The driver can select a message from a table of messages that are sequentially displayed on the remote control unit. The table of messages is stored on a flash memory in the remote unit and in a flash memory in the display unit.

Abstract: A method of manufacturing semiconductor wafers using a simulation tool to determine predicted wafer electrical test measurements. The simulation tool combines in-line critical dimensions from previous from previous processes run on the current wafer lot, data from previous lots for processes subsequent to the process being run on the current lot and calibration simulation data obtained from the comparison of the predicted wafer electrical test measurements and collected wafer electrical test measurements taken from previous actual wafer electrical test measurements.

Abstract: A method of determining classification codes for defects occurring in semiconductor manufacturing processes and for storing the information used to determine the classification codes. A wafer is selected from a production lot after the lot is sent through a first manufacturing process. The selected wafer is scanned to determine if there are defects on the wafer. Images of selected defects are examined and a numerical value is assigned to each of N elemental descriptor terms describing each defect. A classification code is determined for each defect based upon the numerical values assigned to the N elemental descriptor terms. The classification code and numerical values assigned to the N elemental descriptor terms are stored in a database. The wafer is sent through each sequential process and classification codes are assigned to additional defects selected after each sequential process.

Abstract: A statistical simulation of a semiconductor fabrication process is performed in parallel with the actual process. Input parameters derived from a probability density function are applied to the simulator which, in turn, simulates an actual fabrication process which is modeled as a probability density function. Each simulation step is repeated with a random seed value using a Monte Carlo technique, a trial-and-error method using repeated calculations to determine a best solution to a problem. The simulator generates an output in the form of a probability distribution. The statistical simulation uses single-step feedback in which a simulation run uses input parameters that are supplied or derived from actual in-line measured data. Output data generated by the simulator, both intermediate output structure data and WET data, are matched to actual in-line measured data in circumstances for which measured data is available.