Abstract: According to an embodiment, a semiconductor device is provided. The device includes: The second region has a greater curvature than the first region. The device includes: an N-type epitaxy layer; a P-well in the N-type epitaxy layer; a drain in the N-type epitaxy layer; a source in the P-well; and a bulk in the P-well and in contact with the source, wherein the bulk has a greater area in the second region than in the first region.

Abstract: An electrostatic discharge (ESD) protection device is disclosed, which includes a substrate of a positive dopant type; a p-well defined in the substrate; a depletion inducing structure of a negative dopant type having a gap defined in a bottom portion thereof disposed in the p-well, and a n-channel device disposed in a planar encircled region defined by the depletion inducing structure. The well region is in connection with the substrate through the depletion inducing structure. Upon an ESD stress, the depletion inducing structure induces an expanded depletion region in the substrate under the well region, thus providing a substrate trigger mechanism that reduces the triggering voltage of the ESD protection device.

Abstract: A portable electronic device including a housing, a button assembly, a locking unit, a processing unit and a sensing unit is provided. The button assembly is disposed at an opening of the housing and includes a button, an elastomer and a switch. The button is movably disposed at the opening and configured to trigger the switch when an external force is applied. The elastomer is disposed between the button and the housing and forms a waterproof seal between the button and the housing. The locking unit is enabled to keep the button on a fixed position against the elastomer when the processing unit determines that a detection signal generated by the sensing unit is over a threshold. The locking unit is disabled when the processing unit determines that the detection signal is not over the threshold. A protection method for a portable electronic device is also provided.

Abstract: A method and structure of improving the robustness of an electrostatic discharge (ESD) protection device is disclosed. One aspect of the instant disclosure provides a semiconductor structure that comprises: a first well structure; a second well structure arranged adjacent to the isolation structure in the substrate, a diffusion region respectively disposed in the first and the second well structures; an isolation structure arranged between the well structures and laterally separating the diffusion regions; and a partition structure arranged in the isolation structure. The partition structure affects a steeper slope on a lateral surface of the isolation structure bordering at least one of the diffusion regions, thereby modifying a ballasting characteristic of the isolation structure.

Abstract: A drive with heat dissipation and energy-saving function for supplying power to drive a motor. The drive includes a driving circuit having a rectification section. The rectification section serves to receive AC current generated when the motor abruptly accelerates/decelerates and convert the AC current into DC current and output the DC current. The drive further includes a cooling module electrically connected to an output end of the rectification section. The cooling module is drivable by the DC current output from the rectification section to conduct out and dissipate heat.

Abstract: A drive with heat dissipation and energy-saving function for supplying power to drive a motor. The drive includes a driving circuit having a rectification section. The rectification section serves to receive AC current generated when the motor abruptly accelerates/decelerates and convert the AC current into DC current and output the DC current. The drive further includes a cooling module electrically connected to an output end of the rectification section. The cooling module is drivable by the DC current output from the rectification section to conduct out and dissipate heat.

Abstract: Signal compensation method for magnetically sensitive position feedback device in which the compensation for voltage offset is performed in accordance with the following formula (1), while the compensation for voltage amplitude is performed in accordance with the following formula (2): Voffset=(PreMaxV)/4+(NextMaxV)/4+(MaxV)/2,??formula (1) wherein: Voffset is the voltage offset of the half-wave of the current position, PreMaxV is the maximum positive (negative) voltage of the preceding half-wave to the half-wave of the current position, NextMaxV is the maximum positive (negative) voltage of the next half-wave from the half-wave of the current position, and MaxV is the maximum negative (positive) voltage of the half-wave of the current position.

Abstract: A magnetic ring encoding device for composite signals, which is disposed at an end of a rotary shaft of a rotary motor. The magnetic ring encoding device includes: a magnetic ring having a ring-shaped body section synchronously rotatable with the rotary shaft of the rotary motor, multiple magnetic poles being arranged on the body section at equal intervals; multiple Hall elements located and arranged around the body section at intervals, the Hall elements serving to sense magnetic field change that takes place when the magnetic poles pass through the Hall elements and output sensed signals according to the magnetic field change; and an adder for performing addition operation for the sensed signals output from the Hall elements.

Abstract: Induced surface reconstruction of silicone rubber by blending silicone gel reactants with a modified and curing with a mold having high critical surface tension was used to improve the adhesion of chemically inert silicone rubber to polyurethane. The modifier has the following formula wherein m=25˜50; R1, R2, R3, R4, R11 and R12 independently are alkyl; R′ is R or OR, wherein R is a polymer backbone having a molecular weight of 1000˜20000. The mold is formed with a material having a critical surface tension greater than that of a polymer having a repeating unit of said R.

Abstract: Induced surface reconstruction of silicone rubber by blending silicone gel reactants of addition type with a modifier and curing with a mold having a high critical surface tension was used to improve the adhesion of chemically inert silicone rubber to polyurethane. The modifier has the following formula wherein m=25˜50; R1, R2, R3, and R4 independently are alkyl; R′ is R or OR, wherein R is a polymer backbone having a molecular weight of 1000˜20000. The mold is formed with a material having a critical surface tension greater than that of a polymer having a repeating unit of said R.