Abstract: A semiconductor arrangement includes a heat source above an interconnect layer and below a heat conductor. The heat conductor is coupled to a heat sink by a thermally conductive bonding layer. Heat from the heat source is conducted through the heat conductor in a direction opposite the direction of the interconnect layer, through the thermally conductive bonding layer, and to a heat sink. The heat conductor includes an arrangement of dielectric layers, dummy metal layers, and dummy VIA layers.

Abstract: Embodiments are directed to a method of optimizing thickness of a target material film deposited on a semiconductor substrate in a semiconductor processing chamber, wherein the semiconductor processing chamber includes a magnetic assembly positioned on the semiconductor processing chamber, the magnetic assembly including a plurality of magnetic columns within the magnetic assembly. The method includes operating the semiconductor processing chamber to deposit a film of target material on a semiconductor substrate positioned within the semiconductor processing chamber, measuring an uniformity of the deposited film, adjusting a position of one or more magnetic columns in the magnetic assembly, and operating the semiconductor processing chamber to deposit the film of the target material after adjusting position of the one or more magnetic columns.

Abstract: An interconnection structure includes a first dielectric layer, a first conductive layer disposed in the first dielectric layer, a second dielectric layer disposed over the first dielectric layer, a second conductive layer disposed in the second dielectric layer in electrical contact with the first conductive layer, a third dielectric layer formed over the second dielectric layer, wherein the third dielectric layer comprises silicon carbon-nitride (SiCN) based material, and a resistor device disposed in the third dielectric layer.

Abstract: A method of processing a semiconductor wafer is provided. The method includes installing upper lid. The installation of the upper lid includes placing an inlet manifold on a water box; inserting a jig into a lower gas channel in the water box and inserting into an upper gas channel in the inlet manifold; fastening the water box to the inlet manifold; and removing the jig after the water box engaging with the inlet manifold. The method also includes connecting a shower head on a lower side of the water box; and connecting the upper lid to a housing. The method further includes placing a semiconductor wafer into the housing. In addition, the method includes supplying a process gas over the semiconductor wafer through the upper gas channel, the lower gas channel and the shower head.

Abstract: A chamber for a physical vapor deposition (PVD) apparatus includes a collimator configured to narrow filter sputtered particles into a beam, an electrostatic chuck configured to support a substrate in the chamber, a shield and a chamber plate. The chamber plate includes a nut plate portion having a plurality of nut plates and a plurality of cavities in the chamber plate that are configured to allow gas to ingress and egress, wherein the cavities and nut plates are provided in equal numbers. The chamber is configured to operate at a target pressure, and the number of nut plates and corresponding number of cavities are determined based on the target pressure.

Abstract: A processing chamber includes a ground shield and a cover ring. The ground shield includes an annular body, and at least one guide pin extending from the annular body. The cover ring is positioned on the ground shield, and includes an annular body including at least one recess. At least a part of the at least one guide pin is receivable in the at least one recess, an inner cylindrical ring extends from the annular body, and an outer cylindrical ring extends from the annular body and is radially separated from the inner cylindrical ring by a horizontally extending portion of the annular body.

Abstract: An interconnect structure and methods of forming such, are described. The interconnect structure includes a first dielectric layer, first and second conductive lines disposed in the first dielectric layer, a second dielectric layer disposed over the first dielectric layer, a power rail disposed in the second dielectric layer, first conductive via disposed between the power rail and the first conductive line, second conductive via disposed between the power rail and the second conductive line, and one or more dummy vias disposed between the power rail and the first dielectric layer. The power rail and the one or more dummy vias are monolithic.

Abstract: A semiconductor structure includes a multi-level interconnect structure, a passivation layer, a barrier layer, and a pad layer. The passivation layer is above the multi-level interconnect structure. The barrier layer lines an inner sidewall of the passivation layer, a top surface of the passivation layer and a top surface of a conductive line of the multi-level interconnect structure. The barrier layer includes a first layer, a second layer, a third layer, and a fourth layer. The first layer is in a nano-crystalline phase. The second layer is above the first layer and in an amorphous phase. The third layer is above the second layer and in a polycrystalline phase. The fourth layer is above the third layer and in a nano-crystalline phase. The pad layer is above the barrier layer.

Abstract: A semiconductor structure includes a multi-level interconnect structure, a passivation layer, a barrier layer, and a pad layer. The passivation layer is above the multi-level interconnect structure. The barrier layer lines an inner sidewall of the passivation layer, a top surface of the passivation layer and a top surface of a conductive line of the multi-level interconnect structure. The barrier layer includes a first layer, a second layer, a third layer, and a fourth layer. The first layer is in a nano-crystalline phase. The second layer is above the first layer and in an amorphous phase. The third layer is above the second layer and in a polycrystalline phase. The fourth layer is above the third layer and in a nano-crystalline phase. The pad layer is above the barrier layer.

Abstract: An electrochemical plating apparatus for depositing a conductive material on a wafer includes a cell chamber. The plating solution is provided from a bottom of the cell chamber into the cell chamber. A plurality of openings passes through a sidewall of the cell chamber. A flow regulator is arranged with each of the plurality of openings configured to regulate an overflow amount of the plating solution flowing out through the each of the plurality of openings. The electrochemical plating apparatus further comprises a controller to control the flow regulator such that overflow amounts of the plating solution flowing out through the plurality of openings are substantially equal to each other.

Abstract: Methods for analyzing electromigration (EM) in an integrated circuit (IC) are provided. A layout of the IC is obtained. A metal segment is selected from the layout according to a current simulation result of the IC. Two first vias are formed over and in contact with the metal segment in the layout. EM rule is kept on the metal segment when a distance between the two first vias is greater than a threshold distance. The EM rule is relaxed on the metal segment when the distance between the two first vias is less than or equal to the threshold distance.

Abstract: A physical vapor deposition (PVD) system is provided. The PVD system includes a PVD chamber defining a PVD volume within which a target material of a target is deposited onto a wafer. The PVD system includes the target in the PVD chamber. The target is configured to overlie the wafer. An edge of the target extends from a first surface of the target to a second surface of the target, opposite the first surface of the target. A first portion of the edge of the target has a first surface roughness. The first portion of the edge of the target extends at most about 6 millimeters from the first surface of the target to a second portion of the edge of the target. The second portion of the edge of the target has a second surface roughness less than the first surface roughness.

Abstract: A plating system is provided. The plating system includes an electroplating chamber defining a plating area within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating area of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating area of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating area.

Abstract: A telescopic cart includes a storage unit, a support unit, a positioning unit, a pressing control handle, a limit unit, and a handle. The support unit includes a first supporting frame and a second supporting frame which are pivotally connected. The first supporting frame is pivotally connected with the storage unit. The second supporting frame is slidably connected with the storage unit. The positioning unit is used to position the first supporting frame and the second supporting frame without different angles defined therebetween, so that the storage unit is located at different height.

Abstract: An apparatus for electroplating includes a cup configured to support a substrate, and a cone including at least three distance measuring devices arranged on a lower surface thereof and facing the substrate. Each distance measuring device is configured to transmit a laser pulse towards the substrate, the laser pulse impinging the substrate, receive a reflected laser pulse from the substrate, calculate a turnaround time of the laser pulse, and calculate a distance between the distance measuring device and the substrate using the turnaround time for determining an inclination of the substrate.

Abstract: Provides an electropolishing treatment method for a stainless steel workpiece, wherein the method comprises the following steps: placing the stainless steel workpiece in an oxalic acid solution and performing supersonic oscillation; performing a first electropolishing treatment to the stainless steel workpiece, wherein the first electropolishing treatment uses the stainless steel workpiece as an anode and 10% to 15% perchloric acid as an electrolyte, and when a constant voltage is set as 12V, the first electropolishing treatment procedure is performed; and performing a second electropolishing treatment to the stainless steel workpiece, wherein the second electropolishing treatment uses the stainless steel workpiece after the first electropolishing treatment as an anode, and an electrolyte consists of ethanol, sulfuric acid and perchloric acid, and when a constant voltage is set as 12V, the second electropolishing treatment is performed to obtain the stainless steel workpiece after the second electropolishing

Abstract: An electrochemical plating apparatus for performing an edge bevel removal process on a wafer includes a cell chamber. The cell chamber includes two or more nozzles located adjacent to the edge of the wafer. A flow regulator is arranged with each of the two or more nozzles, which is configured to regulate an tap width of a deposited film flowing out through the each of the two or more nozzles. The electrochemical plating apparatus further includes a controller to control the flow regulator such that tap width of the deposited film includes a pre-determined surface profile. The two or more nozzles are located in radially or angularly different dispensing positions above the wafer.

Abstract: An apparatus for electroplating includes a cup configured to support a substrate, and a cone including at least three distance measuring devices arranged on a lower surface thereof and facing the substrate. Each distance measuring device is configured to transmit a laser pulse towards the substrate, the laser pulse impinging the substrate, receive a reflected laser pulse from the substrate, calculate a turnaround time of the laser pulse, and calculate a distance between the distance measuring device and the substrate using the turnaround time for determining an inclination of the substrate.

Abstract: Failure-in-time (FIT) evaluation methods for an IC are provided. Data representing a layout of the IC is accessed, and the layout includes a metal line and a plurality of vertical interconnect accesses (VIAs). The metal line is divided into a first sub-line with a first line width and a second sub-line with a second line width. A plurality of nodes are picked along the first and second sub-lines of the metal line. The metal line is divided into a plurality of metal segments based on the nodes. FIT value is determined for each of the metal segments to verify the layout and fabricate the IC. The first line width is greater than the second line width.

Abstract: A processing chamber includes a ground shield and a cover ring. The ground shield includes an annular body, and at least one guide pin extending from the annular body. The cover ring is positioned on the ground shield, and includes an annular body including at least one recess. At least a part of the at least one guide pin is receivable in the at least one recess, an inner cylindrical ring extends from the annular body, and an outer cylindrical ring extends from the annular body and is radially separated from the inner cylindrical ring by a horizontally extending portion of the annular body.